PVDZ172N各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号PVDZ172N的概述

芯片PVDZ172N的概述 PVDZ172N是一款高度集成的双向瞬态电压抑制器（TVS），主要用于保护敏感电子设备免受瞬时过电压的影响。随着电子产品的快速发展，设备对抗干扰能力的要求越来越高，因而瞬态电压抑制器的应用越来越广泛。PVDZ172N的设计着眼于提高设备的稳定性，降低故障发生的几率。该芯片使用的是超快响应时限的垂直齐纳管技术，使得其在电压瞬变时能够迅速限制电压的峰值，保护后续设备不受损害。芯片PVDZ172N的详细参数 PVDZ172N的特性参数如下： - 工作电压（Vwm）: 5.0V - 击穿电压（Vbr）: 6.0V - 最小击穿电压（Vbr(min)）: 5.6V - 最大击穿电压（Vbr(max)）: 6.4V - 最大稳态功耗（Ppp）: 600W - 最大脉冲电流（Ipp）: 30A - 反向漏电流（IR）: 1μA（@Vwm） - 工作温度范围（Tj）: -...

产品型号PVDZ172N的Datasheet PDF文件预览

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Data Sheet No. 1.039

PVDZ172N

Microelectronic

Power IC Relay

HEXFET^®POWER MOSFET PHOTOVOLTAIC RELAY

Single Pole, Normally Open

0-60V DC, 1.5A

General Description

PVDZ172N Features

The PVDZ172N Photovoltaic Relay is a single-

pole, normally open solid state relay that can

replace electromechanical relays used for gen-

eral purpose switching of DC loads. It utilizes

International Rectifier’s HEXFET power MOS-

FET as the output switch, driven by an integrated

circuit photovoltaic generator of novel construc-

tion. The output switch is controlled by radiation

from a GaAlAs light emitting diode (LED) which

is optically isolated from the photovoltaic gen-

erator.

250mW On-Resistance ■

Bounce-free Operation ■

1.5 Amp capacity ■

4000 V_RMSI/O isolation ■

Solid-State reliability ■

UL recognition and CSA certification pending ■

These units overcome the limitations of both

electromechanical and reed relays by offering

the solid-state advantages of high sensitivity,

miniaturization, no contact bounce, long opera-

tional life, insensitivity to external magnetic fields,

shock and vibration, and high reliability inherent

with solid state technology. They are ideally

suited for switching high currents or low level

signals without distortion or injection of electri-

cal noise.

These relays are packaged in 8-pin, molded

DIP packages and available with thru-hole and

SMT (gull-wing) leads, in plastic shipping tubes.

Part Identification

Applications

PVDZ172N

PVDZ172NS SMT (gull-wing)

thru-hole

Portable Electronics ■

Programmable Logic Controllers ■

Computers and Peripheral Devices ■

Audio Equipment ■

Power Supplies and Power Distribution ■

Instrumentation ■

(HEXFET is the registered trademark for International Rectifier Power MOSFETs)

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INTERNATIONAL RECTIFIER

PVDZ172N Photovoltaic Relay

Electrical Specifications (-40°C ≤ T ≤ =+85°C unless otherwise specified)

INPUT CHARACTERISTICS

Limits

Units

Min. Control Current (see Figures 1 and 2)

Max. Control Current for Off-State Resistance

0.4

5.0 to 25

7.0

@ T_A=+25°C

Control Current Range (Caution: Current limit input LED, see Fig.6)

Max. Reverse Voltage

OUTPUT CHARACTERISTICS

Operating Voltage Range

0 to 60

V(DC)

Max. Load Current 40 C (See Fig. 1 and 2)

1.5

4.0

2.0

A(DC)

Max. Pulsed Load Current @TA=+25°C (100 ms @ 10% duty Cycle)

Max. Turn-On Time @TA=+25°C (see Fig. 7)

For 500mA, 50VDC Load, 10mA Control

Max. Turn-Off Time @TA=+25°C (see Fig. 7)

For 500mA, 50VDC Load, 10mA Control

0.5

Max. On State Resistance @TA=+25°C(pulsed) (See Fig. 4)

1.0A Load, 10mA Control

250

mΩ

Min. Off State Resistance @T_A=+25°C @ 48 VDC (see Fig. 5)

Min. Off-State dv/dt

10⁸

1000

150

Ohms

V/µs

Output Capacitance (See Fig. 9)

pF @ 50 VDC

GENERAL CHARACTERISTICS

Dielectric Strength, Input-Output

Limits

Units

V_(RMS)

Ω

4000

10¹²@T_A=+25°C - 50% RH

1.0

Insulation Resistance, Input-Output , 90 V_DC

Capacitance, Input-Output

Lead Temperature (1.6mm below seating plane) for 10 sec.

+260

°C

Ambient Temperature Range:

Operating

Storage

-40 to +85

°C

-40 to +100

°C

Wiring Diagrams

Source

Anode

Schematic

Cathode

Drain

Electromechanical

Analogy

(HEXFET is the registered trademark for International Rectifier Power MOSFETs)

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INTERNATIONAL RECTIFIER

PVDZ172N PhotoVoltaic Relay

2. 00

1. 75

1. 50

1. 25

1. 8

ILED = 10mA

1. 5

1. 2

ILED = 5mA (Typical)

0. 9

0. 6

0. 3

1. 00

0. 75

0. 50

+25 deg. C

+40 deg. C +60 deg. C

+80 deg. C

0. 25

10 0

LED Control Current (mA)

Ambient Temperature (deg. C)

Figure 1. Current Derating Curves

Figure 2. Typical Control Current

Requirements

400

350

300

250

200

150

100

1. 6

+40 deg. C

1. 4

1. 2

1. 0

0. 8

0. 6

0. 4

0. 2

+80 deg. C

+60 deg. C

+25 deg. C

ILED = 10mA

-40

-20

100

0. 1

0.2

0.3

0.4

0.5

Ambient Temperature (deg. C)

Vds (V)

Figure 4. Typical On-Resistance

Figure 3. Typical On-Characteristics

100

CAUTION:provide current limiting

so that25 mA maximum steady-

state control currentrating is

not exceeded

3. 0

1. 0

0. 3

0. 1

-35

-15

105

0. 5

1. 0

1. 5

2. 0

Ambient Temperature (deg. C)

LED Forward Voltage Drop (Volts DC)

Figure 5. Typical Normalized Off-State Leakage

Figure 6. Input Characteristics

(Current Controlled)

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INTERNATIONAL RECTIFIER

PVDZ172N Photovoltaic Relay

Mechanical Specifications

(Dimensions in millimeters (inches)

Dimensions: mm (Inches)

Package Size: 8 Pin DIP

Tolerances: .015 (.38)

unless otherwise specified

Case Material: Molded epoxy

Weight: .07 oz. (2 grams)

dl y

of f

100

200

500

1000

2000

Delay Time (microseconds)

Figure 7. Typical Delay Times

LE D

90 %

10 %

tdly

of f

Figure 8. Delay Time Definitions

1000

750

500

250

Vds, Drain to Source Voltage (V)

Figure 9. Typical Output Capacitance

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www/irf.com/

Data and specifications subject to change without notice.3/96

To Order

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PVDZ172N产品参数

型号:	PVDZ172N
是否Rohs认证：	符合
生命周期：	Active
包装说明：	MS-001AB, DIP-8/4
Reach Compliance Code：	compliant
HTS代码：	8541.40.95.00
风险等级：	5.19
其他特性：	UL RECOGNIZED, HIGH RELIABILITY
配置：	SINGLE WITH BUILT-IN DIODE
最大正向电流：	0.025 A
最大绝缘电压：	4000 V
元件数量：	1
最大通态电流：	1.5 A
最大通态电阻：	0.25 Ω
最高工作温度：	85 °C
最低工作温度：	-40 °C
光电设备类型：	TRANSISTOR OUTPUT SSR
Base Number Matches：	1

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