TRANSISTOR MODULE
QCA100A/QBB100A40/60
UL;E76102(M)
QCA100A and QBB100A is a dual Darlington power
102.0max
63.0±0.2
95max
transistor modules with two high speed, high power
Darlington transistors. Each transistor has a reverse
paralleled fast recovery diode.
80±0.25
6-M5
(3.0)� 15.8 15.8 15.8 15.8 15.8
23
23
4ーφ5.5
C2
E1
E2
C1
B2
X
X
●
�
QCA100A…Series-connected type
B
1
QBB100A…Separate Type
(1.5)
3.4
�
10.5
●
4-φ5.4
C
CEX
I =100A, V =400/600V
M5×10
● Low saturation voltage for higher efficiency.
● Isolated mounting base
110Tab
NAME PLATE
●
EBO
V
10V for faster switching speed.
QCA
QBB
E2
B2 C2 E1
B1 C1
(Applications)
E2
B2X B2 C2E1
B1 C1
Motor Control(VVVF), AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit:A
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
QCA100A40 QCA100A60
QBB100A40 QBB100A60
Symbol
Item
Conditions
Unit
VCBO
VCEX
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
400
400
600
600
V
V
VBE=-2V
)pw≦1ms
10
V
A
(
100(200)
100
Reverse Collector Current
Base Current
A
-IC
B
I
6
A
T
P
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
620
W
℃
℃
V
TC=25℃
j
T
-40 to +150
-40 to +125
2500
Tstg
VISO
A.C.1minute
Mounting(M5)
Terminal(M5)
Recommended Value 1.5
Recommended Value 1.5
Typical Value
-
-
2.5(15
2.5(15
-
-
25)
25)
2.7(28)
2.7(28)
360/340
Mounting
Torque
N・m
(㎏f・B)
Mass
g
QCA100A/QBB100A
■Electrical Characteristics
Ratings
Symbol
Item
Conditions
Unit
Min.
Max.
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
CB
CBO
1.0
mA
mA
V
=V
EB
V =V
EBO
400
QCA100A40
QBB100A40
QCA100A60
QBB100A60
QCA100A40
QBB100A40
QCA100A60
QBB100A60
300
450
400
CEO(SUS)
V
V
V
Ic=1A
Collector Emitter
Sustaning Voltage
CEX(SUS)
V
B2
Ic=20A,I =-5A
600
FE
h
DC Current Gain
CE
Ic=100A,V =2V/5V
75/100
VCE(sat)
BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
B
2.0
2.5
V
V
Ic=100A,I =1.4A
B
V
Ic=100A,I =1.4A
ton
ts
2.0
Vcc=300V,Ic=100A
Switching Time
Storage Time
Fall Time
12.00
3.00
1.40
0.2/0.6
μs
B1
B2
I =2A,I =-2A
tf
ECO
V
Collector-Emitter Reverse Voltage
V
-Ic=100A
Rth(j-c) Thermal Impedance
Transistor part/Diode part
℃/W
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com