QEB363芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号QEB363的概述

芯片QEB363的概述 QEB363是一款集成电路芯片，广泛应用于多种电子产品和设备中。它融合了高效能和多功能性，适用于工业控制、自动化设备、消费电子产品以及通信领域等。QEB363的设计目标是为用户提供稳定的性能与出色的灵活性，在不同的应用场景下都能展现出良好的适应能力。芯片QEB363的详细参数 QEB363在技术参数上具有一定的吸引力，其主要参数包括但不限于： - 工作电压：QEB363的工作电压范围通常为3.3V至5V，能够支持多种电源设计，适应广大消费电子和工业设备的电源要求。 - 工作温度范围：该芯片的工作温度范围通常为-40°C到85°C，适用于各种苛刻环境。 - 引脚数量：QEB363一般采用16引脚封装，这使得其连接和布线更加方便。 - 最大输出电流：在负载条件下，QEB363能够提供高达500mA的输出电流，满足较高功率需求的应用。 - 功能特性：QEB363通常...

产品型号QEB363的Datasheet PDF文件预览

QEB363

SUBMINIATURE PLASTIC INFRARED

EMITTING DIODE

PACKAGE DIMENSIONS

CATHODE

0.276 (7.0)

MIN

0.087 (2.2)

0.071 (1.8)

0.024 (0.6)

0.016 (0.4)

0.019 (0.5)

0.012 (0.3)

FEATURES

0.074 (1.9)

• T-3/4 (2mm) Surface Mount Package

• Tape & Reel Option (See Tape & Reel Specifications)

• Lead Form Options: Gullwing, Yoke, Z-Bend

• Narrow Emission Angle, 24°

.059 (1.5)

.051 (1.3)

.118 (3.0)

.102 (2.6)

0.055 (1.4)

0.008 (0.21)

0.004 (0.11)

• Wavelength = 940 nm, GaAs

SCHEMATIC

0.024 (0.6)

0.106 (2.7)

0.091 (2.3)

• Pink Tinted Lens

• Matched Photosensor: QSB363

• High Radiant Intensity

ANODE

NOTES:

1. Dimensions are in inches (mm).

2. Tolerance of ± .010 (.25) on all non nominal dimensions

unless otherwise specified.

CATHODE

NOTES

(T = 25°C unless otherwise specified)

ABSOLUTE MAXIMUM RATINGS

1. Derate power dissipation linearly

1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols

are recommended as cleaning

agents.

Parameter

Operating Temperature

Symbol

T_OPR

T_STG

T_SOL-I

T_SOL-F

I_F

Rating

-40 to +100

240 for 5 sec

260 for 10 sec

Units

°C

Storage Temperature

Soldering Temperature (Iron)^(2,3,4)

Soldering Temperature (Flow)^(2,3)

Continuous Forward Current

Reverse Voltage

°C

4. Soldering iron tip at 1/16” (1.6mm)

from housing

V_R

Power Dissipation⁽¹⁾

P_D

100

(TA =25°C)

ELECTRICAL / OPTICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

I_F= 100 mA

SYMBOL

MIN.

TYP.

940

±12

—

MAX.

—

UNITS

Peak Emission Wavelength

Emission Angle

Forward Voltage

Reverse Current

Radiant Intensity

Rise Time

—

I_F= 100 mA

V_F

I_R

—

Deg.

I_F= 100 mA, t_P= 20 ms

V_R= 5 V

1.6

100

—

µA

I_F= 100 mA, t_P= 20 ms

I_F= 100 mA,

—

mW/sr

µs

t_r

—

Fall Time

t_P= 20 ms

t_f

—

µs

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QEB363

SUBMINIATURE PLASTIC INFRARED

EMITTING DIODE

TYPICAL PERFORMANCE CURVES

Fig. 1 Maximum Forward Current vs.

Temperature

Fig. 2 Relative Radiant Intensity vs.

Wavelength

200

160

120

100

IF = 20 mA

TA = 25˚C

-25

75 85 100

880 900 920 940 960 980 1000 1020 1040

Ambient Temperature T (˚C)

Wavelengthl !#(nm)

Fig. 3 Peak Emission Wavelength vs.

Fig. 4 Forward Current vs.

Ambient Temperature

Forward Voltage

500

980

200

100

960

940

920

900

-25

100

Ambient Temperature T (˚C)

0.5 1.0 1.5 2.0 2.5 3.0 3.5

Forward Voltage V (V)

Fig. 5 Relative Radiant Flux vs.

Ambient Temperature

Fig. 6 Relative Radiant Intensity vs.

Angular Displacement

0.5

0.2

0.1

0.6

0.4

0.2

0.4

0.6

-25

100

Ambient Temperature T (˚C)

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SURFACE MOUNT OPTIONS

T-3/4 PACKAGES

FEATURES

GULL WING LEAD CONFIGURATION

• Three lead forming options: Gull Wing, Yoke and Z-Bend

• Compatible with automatic placement equipment

• Supplied on tape and reel or in bulk packaging

• Compatible with vapor phase reflow solder processes

0.166 (4.2)

0.016 (0.4)

ANODE

0.020 (0.51)

0.087 (2.2)

0.071 (1.8)

0.074 (1.9)

0.024 (0.6)

0.078 (2.0)

0.043 (1.1)

.118 (3.0)

.102 (2.6)

0.055 (1.4)

0.005 (0.13)

0.106 (2.7)

0.091 (2.3)

NOTES: (Applies to all package drawings)

1. Dimensions are in inches (mm).

2. Tolerance of ± .010 (.25) on all non nominal dimensions

unless otherwise specified.

YOKE LEAD CONFIGURATION

Z-BEND LEAD CONFIGURATION

0.236 (6.0)

0.220 (5.6)

0.177 (4.5)

0.161 (4.1)

0.283 (7.2)

0.098 (2.5)

0.127 (3.25)

0.112 (2.85)

0.016 (0.4)

ANODE

0.020 (0.5)

0.087 (2.2)

0.071 (1.8)

0.087 (2.2)

0.071 (1.8)

0.074 (1.9)

0.118 (3.0)

0.102 (2.6)

0.024 (0.6)

0.055 (1.4)

0.031 (0.8)

0.080 (2.0)

0.043 (1.1)

.118 (3.0)

.102 (2.6)

0.055 (1.4)

0.031 (0.8)

0.051 (1.3)

0.043 (1.1)

0.008 (0.2)

0.141 (3.6)

0.106 (2.7)

0.091 (2.3)

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QEB363

SUBMINIATURE PLASTIC INFRARED

EMITTING DIODE

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORATION. As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, and (c) whose failure to

perform when properly used in accordance with

instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury of the

user.

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

www.fairchildsemi.com

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100007C

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QEB363产品参数

型号:	QEB363
生命周期：	Obsolete
IHS 制造商：	QT OPTOELECTRONICS
Reach Compliance Code：	unknown
风险等级：	5.6
配置：	SINGLE
最大正向电流：	0.05 A
功能数量：	1
最高工作温度：	100 °C
最低工作温度：	-40 °C
光电设备类型：	INFRARED LED
峰值波长：	940 nm
形状：	ROUND
尺寸：	1.9 mm
Base Number Matches：	1

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