QED523芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

PLASTIC INFRARED

LIGHT EMITTING DIODE

QED522 QED523

PACKAGE DIMENSIONS

0.190 (4.83)

0.178 (4.52)

REFERENCE

SURFACE

0.220 (5.59)

0.030 (0.76)

NOM

0.800 (20.3)

MIN

0.050 (1.27)

CATHODE

0.100 (2.54)

NOM

Ø 0.215 (5.46)

NOM

SCHEMATIC

45°

0.020 (0.51)

SQ. (2X)

ANODE

R 0.022 (0.56)

CATHODE

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of .010 (.25) on all nonꢀnominal dimensions ꢁnless

otherwise speciﬁed.

DESCRIPTION

The QED522/523 is an 880 nm AlGaAs LED encapsulated in a clear, peach tinted, plastic TO-46 package.

FEATURES

•

λ= 880 nm

Chip material = AlGaAs

Package type: Plastic TO-46

Matched Photosensor: QSD722/723/724

Narrow Emission Angle, 20°

High Output Power

Package material and color: clear, peach tinted, plastic

Page 1 of 4

6/13/02

PLASTIC INFRARED

LIGHT EMITTING DIODE

QED522 QED523

ABSOLUTE MAXIMUM RATINGS (T = 25°C ꢁnless otherwise speciﬁed)

A

Parameter

Symbol

Rating

ꢀ40 to + 100

240 for 5 sec

260 for 10 sec

100

Unit

°C

T

Operating Temperatꢁre

Storage Temperatꢁre

OPR

T

°C

STG

(2,3,4)

(2,3)

T

°C

Soldering Temperatꢁre (Iron)

SOLꢀI

T

°C

Soldering Temperatꢁre (Flow)

Continꢁoꢁs Forward Cꢁrrent

Reverse Voltage

SOLꢀF

I

mA

V

F

V

5

R

(1)

P

200

mW

Power Dissipation

D

NOTES:

1. Derate power dissipation linearly 2.67 mW/°C above 25°C.

2. RMA ﬂꢁx is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16" (1.6 mm) minimꢁm from hoꢁsing

.

ELECTRICAL / OPTICAL CHARACTERISTICS (T =25°C)

A

Parameter

Test Conditions

Symbol

Min

—

Typ

880

20

Max

—

Units

I = 100 mA

λ

PE

Peak Emission Wavelength

Emission Angle

nm

Deg.

V

F

I = 100 mA

2Θ1/2

—

F

I = 100 mA, tp = 20 ms

V

Forward Voltage

Reverse Cꢁrrent

Radiant Intensity QEC522

Radiant Intensity QEC523

Rise Time

—

1.8

10

80

—

F

V = 5 V

I

—

µA

R

I = 100 mA, tp = 20 ms

I

20

40

—

mW/sr

ns

F

E

I = 100 mA, tp = 20 ms

I

—

F

E

t

800

—

r

I = 100 mA

F

t

Fall Time

—

ns

f

Page 2 of 4

6/13/02

PLASTIC INFRARED

LIGHT EMITTING DIODE

QED522 QED523

Fig. 1 Normalized Radiant Intensity vs. Forward Current

Fig. 2 Forward Voltage vs. Ambient Temperature

10

2.0

I

= 50 mA

Normalized to:

F

I

t

= 100 mA Pꢁlsed

F

= 100 µs

pw

I

= 100 mA

= 10 mA

F

Dꢁty Cycle = 0.1 %

= 25°C

1

0.1

1.5

1.0

0.5

0.0

T

A

I

= 20 mA

F

0.01

0.001

Normalized to:

I

t

Pꢁlsed

F

= 100 µs

pw

Dꢁty Cycle = 0.1 %

1

10

100

1000

ꢀ40

ꢀ20

0

20

40

60

80

100

I

F

ꢀ FORWARD CURRENT (mA)

T

A

ꢀ AMBIENT TEMPERATURE (°C)

Fig. 3 Normalized Radiant Intensity vs. Wavelength

1.0

Fig. 4 Radiation Diagram

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

90

100

80

110

70

120

60

130

50

140

40

150

160

170

30

20

10

0

180

0.2

0.0

0.2

0.4

0.6

0.8

1.0

0.8

0.6

0.4

775

800

825

850

875

900

925

950

λ(nm)

Page 3 of 4

6/13/02

PLASTIC INFRARED

LIGHT EMITTING DIODE

QED522 QED523

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORATION. As ꢁsed herein:

1. Life sꢁpport devices or systems are devices or systems

which, (a) are intended for sꢁrgical implant into the body, or

(b) sꢁpport or sꢁstain life, and (c) whose failꢁre to perform

when properly ꢁsed in accordance with instrꢁctions for ꢁse

provided in the labeling, can be reasonably expected to

resꢁlt in a significant injꢁry of the ꢁser.

2. A critical component in any component of a life sꢁpport

device or system whose failꢁre to perform can be

reasonably expected to caꢁse the failꢁre of the life sꢁpport

device or system, or to affect its safety or effectiveness.

Page 4 of 4

6/13/02

型号:	QED523
是否Rohs认证：	不符合
生命周期：	Obsolete
包装说明：	PLASTIC, TO-46, 2 PIN
Reach Compliance Code：	unknown
风险等级：	5.71
配置：	SINGLE
最大正向电流：	0.1 A
JESD-609代码：	e0
功能数量：	1
最高工作温度：	100 °C
最低工作温度：	-40 °C
光电设备类型：	INFRARED LED
峰值波长：	880 nm
形状：	ROUND
尺寸：	4.67 mm
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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