QM10KD-H各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

MITSUBISHI TRANSISTOR MODULES

QM10HA-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

QM10HA-HB

• IC

Collector current .......................... 10A

• VCEX Collector-emitter voltage ........... 600V

• hFE DC current gain.............................250

• Insulated Type

• UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

AC motor controllers, UPS, CVCF, DC motor controllers, Welders, NC equipment

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

C

3.7

7.0

A

B

φ4.2 ^0.1

φ1.7

φ2.4

φ1.7

E

6.35

4.75

6.35

4.75

0.8

φ1.3

φ2.0

B

R2.1 0.05

9.0MAX.

3.2

0.4 4.2 0.4

24.0MAX.

Fig. A

Fig. B

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM10HA-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

IC

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Conditions

Ratings

600

7

Unit

V

IC=1A, VEB=2V

VEB=2V

V

Emitter open

Collector open

DC

V

10

A

–IC

Collector reverse current

Collector dissipation

Base current

DC (forward diode current)

TC=25°C

83

A

PC

1

W

A

IB

DC

10

Surge collector reverse current

(forward diode current)

–ICSM

Peak value of one cycle of 60Hz (half wave)

100

A

Tj

Junction temperature

Storage temperature

Isolation voltage

–40~+150

–40~+125

2500

°C

Tstg

Viso

Charged part to case, AC for 1 minute

Mounting screw M4

V

0.98~1.47

10~15

N·m

kg·cm

g

—

Mounting torque

Weight

Typical value

25

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Limits

Typ.

—

Symbol

ICEX

Parameter

Test conditions

Unit

Min.

—

Max.

1.0

40

Collector cutoff current

VCE=600V, VEB=2V

mA

V

—

ICBO

Collector cutoff current

VCB=600V, Emitter open

VEB=7V, Collector open

—

IEBO

Emitter cutoff current

—

2.0

2.5

1.5

—

VCE (sat)

VBE (sat)

–VCEO

hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

IC=10A, IB=40mA

—

V

—

IC=–10A (diode forward voltage)

IC=10A, VCE=2.0V

V

250

—

1.5

10

ton

µs

—

ts

Switching time

VCC=300V, IC=10A, IB1=60mA, –IB2=200mA

µs

—

2.0

1.5

2.5

tf

µs

—

Rth (j-c) Q

Rth (j-c) R

Transistor part

Diode part

°C/W

Thermal resistance

(junction to case)

—

Contact thermal resistance

(case to fin)

—

0.4

Rth (c-f)

Conductive grease applied

°C/W

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM10HA-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

PERFORMANCE CURVES

COMMON EMITTER OUTPUT

CHARACTERISTICS (TYPICAL)

DC CURRENT GAIN VS.

COLLECTOR CURRENT (TYPICAL)

10³

7

20

16

12

8

Tj=25°C

IB=100mA

IB=60mA

IB=40mA

VCE=5.0V

5

4

3

2

VCE=2.0V

IB=20mA

10²

7

5

IB=10mA

4

3

2

4

Tj=25°C

Tj=125°C

10¹

0

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

0

1

2

3

4

5

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT IC (A)

COMMON EMITTER INPUT

CHARACTERISTIC (TYPICAL)

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

10¹

7

10⁰

7

VCE=2.0V

T^j=25°C

5

4

3

2

3

2

VBE(sat)

VCE(sat)

10^–1

7

10⁰

7

5

4

3

2

3

2

IB=40mA

T^j=25°C

Tj=125°C

10^–1

10^–2

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

1.0

1.4

1.8

2.2

2.6

3.0

BASE-EMITTER VOLTAGE VBE (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE (TYPICAL)

SWITCHING TIME VS. COLLECTOR

CURRENT (TYPICAL)

10²

7

5

4

VCC=300V

I^B1=60mA

I^B2=–200mA

Tj=25°C

Tj=125°C

5

3

2

10¹

7

3

2

5

ts

tf

3

2

10⁰

7

5

IC=10A

1

0

3

Tj=25°C

Tj=125°C

ton

IC=1A

IC=5A

2

10^–1

10^–32 3 5 710^–22 3 5 710^–12 3 5 7 10⁰

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

BASE CURRENT IB (A)

COLLECTOR CURRENT IC (A)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM10HA-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME VS. BASE

CURRENT (TYPICAL)

REVERSE BIAS SAFE OPERATING AREA

10²

7

20

16

12

8

T

j

=125°C

V

CC=300V

5

I

B1=60mA

I

B2=–0.5A

C

=10A

3

2

Tj

=25°C

Tj=125°C

10¹

IB2=–2.0A

7

5

ts

3

2

10⁰

7

5

tf

4

3

2

10^–1

0

10^–1

2

3 4 5 7 10⁰

2

3 4 5 7 10¹

0

200

400

600

800

BASE REVERSE CURRENT –IB2 (A)

COLLECTOR-EMITTER VOLTAGE VCE (V)

FORWARD BIAS SAFE OPERATING AREA

DERATING FACTOR OF F. B. S. O. A.

10²

100

SECOND

BREAKDOWN

AREA

7

5

90

80

70

60

50

40

30

20

10

0

3

2

100µs 50µs

10¹

200µs

500ms

7

1ms

5

DC

3

2

10⁰

7

5

COLLECTOR

DISSIPATION

3

T

C

=25°C

2

NON–REPETITIVE

10^–1

10⁰

10¹

10²10³

2 3 5 7

0

20 40 60 80 100 120 140 160

2 3 5 7

COLLECTOR-EMITTER VOLTAGE VCE (V)

CASE TEMPERATURE TC (°C)

REVERSE COLLECTOR CURRENT VS.

COLLECTOR-EMITTER REVERSE

VOLTAGE (DIODE FORWARD

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (TRANSISTOR)

⁰2 3 5 7

2 3 5 7

CHARACTERISTICS) (TYPICAL)

10

10¹

10²

7

1.6

1.4

1.2

1.0

0.8

0.6

0.4

5

4

3

2

10¹

7

5

4

3

2

0.2

0

T

j

=25°C

Tj=125°C

10⁰

10^–3

10^–2

10^–110⁰

2 3 5 7

0.4

0.8

1.2

1.6

2.0

2.4

2 3 5 7

TIME (s)

COLLECTOR-EMITTER REVERSE VOLTAGE

–VCEO (V)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM10HA-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

RATED SURGE COLLECTOR REVERSE CURRENT

(DIODE FORWARD SURGE CURRENT)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE (TYPICAL)

10¹

7

100

80

60

40

20

0

7

5

I

rr

4

3

2

3

2

Q

rr

10⁰

7

10⁰

7

t

rr

5

4

V

CC=300V

3

2

I

B1=60mA

3

2

B2=–200mA

T

j

=25°C

=125°C

T

10 ^–1

10^–1

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

2

3 4 5 7 10¹

2

3 4 5 7 10²

CONDUCTION TIME (CYCLES AT 60Hz)

FORWARD CURRENT IF (A)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (DIODE)

10⁰2 3 5 710¹2 3 5 7

3.0

2.0

1.0

0

10^–3

10^–2

10^–1

10⁰

2 3 5 7

TIME (s)

Feb.1999

型号:	QM10KD-HB
生命周期：	Obsolete
IHS 制造商：	MITSUBISHI ELECTRIC CORP
包装说明：	FLANGE MOUNT, R-PUFM-D17
针数：	16
Reach Compliance Code：	unknown
风险等级：	5.8
Is Samacsys：	N
最大集电极电流 (IC)：	10 A
配置：	COMPLEX
最小直流电流增益 (hFE)：	250
JESD-30 代码：	R-PUFM-D17
元件数量：	6
端子数量：	17
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	NPN
认证状态：	Not Qualified
表面贴装：	NO
端子形式：	SOLDER LUG
端子位置：	UPPER
晶体管元件材料：	SILICON
Base Number Matches：	1

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