QM200DY-HB原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

MITSUBISHI TRANSISTOR MODULES

QM200DY-HB

HIGH POWER SWITCHING USE

INSULATED TYPE

QM200DY-HB

• IC

Collector current ........................ 200A

• VCEX Collector-emitter voltage ........... 600V

• hFE DC current gain.............................750

• Insulated Type

• UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

Inverters, Servo drives, DC motor controllers, NC equipment, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

3-M6

14

B2X

B

2

C2E1

E2

C1

E

2

B2X

B

2

8 5

5 8

E2

E

1

B1

C

1

C2E1

E2

23.5

23

5

23

5

φ6.5

93

108

B1X

Tab#110, t=0.5

18

E1

1

B

LABEL

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM200DY-HB

HIGH POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

IC

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Conditions

Ratings

600

7

Unit

V

IC=1A, VEB=2V

VEB=2V

V

Emitter open

Collector open

DC

V

200

1240

12

A

–IC

Collector reverse current

Collector dissipation

Base current

DC (forward diode current)

TC=25°C

A

PC

W

A

IB

DC

Surge collector reverse current

(forward diode current)

–ICSM

Peak value of one cycle of 60Hz (half wave)

2000

A

Tj

Junction temperature

Storage temperature

Isolation voltage

–40~+150

–40~+125

2500

°C

Tstg

Viso

Charged part to case, AC for 1 minute

Main terminal screw M6

V

1.96~2.94

20~30

N·m

kg·cm

N·m

kg·cm

g

—

Mounting torque

Weight

1.96~2.94

20~30

Mounting screw M6

Typical value

470

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Limits

Typ.

—

Symbol

ICEX

Parameter

Test conditions

Unit

Min.

—

Max.

4.0

200

2.5

3.0

1.8

—

Collector cutoff current

VCE=600V, VEB=2V

VCB=600V, Emitter open

VEB=7V

mA

V

—

ICBO

Collector cutoff current

—

IEBO

Emitter cutoff current

—

VCE (sat)

VBE (sat)

–VCEO

hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

IC=200A, IB=260A

—

V

—

–IC=200A (diode forward voltage)

IC=200A, VCE=2.5V

V

750

—

2.5

10

ton

µs

—

ts

Switching time

VCC=300V, IC=200A, IB1=400mA, –IB2=4A

µs

—

2.0

0.1

0.33

tf

µs

—

Rth (j-c) Q

Rth (j-c) R

Transistor part (per 1/2 module)

Diode part (per 1/2 module)

°C/W

Thermal resistance

(junction to case)

—

Contact thermal resistance

(case to fin)

—

0.075

Rth (c-f)

Conductive grease applied (per 1/2 module)

°C/W

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM200DY-HB

HIGH POWER SWITCHING USE

INSULATED TYPE

PERFORMANCE CURVES

COMMON EMITTER OUTPUT

CHARACTERISTICS (TYPICAL)

DC CURRENT GAIN VS.

COLLECTOR CURRENT (TYPICAL)

10⁴

7

500

400

300

200

100

0

Tj=25°C

5

4

VCE=5.0V

3

2

VCE=2.5V

10³

7

5

4

3

2

Tj=25°C

Tj=125°C

10²

10¹

2

3 4 5 7 10²

2

3 4 5 7 10³

0

1

2

3

4

5

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT IC (A)

COMMON EMITTER INPUT

CHARACTERISTIC (TYPICAL)

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

3

2

3

2

IB=260mA

Tj=25°C

10⁰

7

T^j=125°C

10¹

7

VBE(sat)

5

4

3

2

3

2

10 ^–1

7

10⁰

7

VCE(sat)

5

4

3

Tj=25°C

5

4

3

VCE=2.5V

2.2

2.6

3.0

3.4

3.8

4.2

10¹

2

3 4 5 7 10²

2

3 4 5 7 10³

BASE-EMITTER VOLTAGE VBE (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE (TYPICAL)

SWITCHING TIME VS. COLLECTOR

CURRENT (TYPICAL)

10¹

7

5

4

5

4

ts

3

2

3

2

ton

10⁰

7

IC=300A

IC=200A

IC=100A

5

VCC=300V

IB1=400mA

IB2=–4A

Tj=25°C

Tj=125°C

4

3

2

1

0

tf

Tj=25°C

Tj=125°C

10^–1

10¹

10 ^–22 3 45 710 ^–12 3 45 7 10⁰2 3 45 7

10¹

2

3 4 5 7 10²

2

3 4 5 7 10³

BASE CURRENT IB (A)

COLLECTOR CURRENT IC (A)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM200DY-HB

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME VS. BASE

CURRENT (TYPICAL)

REVERSE BIAS SAFE OPERATING AREA

400

350

300

250

200

150

3

2

I

B2=–3.5A

V

CC=300V

=200A

B1=400mA

=25°C

=125°C

IC

I

B2=–10A

I

10¹

7

T

j

Tj

Tj=125°C

5

ts

4

3

2

10⁰

7

100

50

0

tf

5

4

3

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

0

100 200 300 400 500 600 700 800

BASE REVERSE CURRENT –IB2 (A)

COLLECTOR-EMITTER VOLTAGE VCE (V)

FORWARD BIAS SAFE OPERATING AREA

DERATING FACTOR OF F. B. S. O. A.

10³

100

7

5

SECOND

BREAKDOWN

AREA

90

80

70

60

50

40

30

20

10

0

3

2

10²

7

5

COLLECTOR

DISSIPATION

3

2

10¹

7

5

3

T

C

=25°C

2

NON–REPETITIVE

10⁰

10⁰2 345 710¹2 3 45 7 10²2 345 710³

0

20 40 60 80 100 120 140 160

COLLECTOR-EMITTER VOLTAGE VCE (V)

CASE TEMPERATURE TC (°C)

REVERSE COLLECTOR CURRENT VS.

COLLECTOR-EMITTER REVERSE

VOLTAGE (DIODE FORWARD

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (TRANSISTOR)

10⁰2 3 5 710¹

CHARACTERISTICS) (TYPICAL)

10³

7

0.10

0.09

0.08

0.07

5

4

3

2

0.06

0.05

0.04

0.03

0.02

10²

7

5

4

3

2

T

j

=25°C

0.01

0

Tj=125°C

10¹

10 ^–3

10 ^–2

10 ^–1

2 345 7 10⁰

2 345 7

2 3 45 7

0.4

0.8

1.2

1.6

2.0

2.4

TIME (s)

COLLECTOR-EMITTER REVERSE VOLTAGE

–VCEO (V)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM200DY-HB

HIGH POWER SWITCHING USE

INSULATED TYPE

RATED SURGE COLLECTOR REVERSE CURRENT

(DIODE FORWARD SURGE CURRENT)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE (TYPICAL)

3

2

2000

1600

1200

800

400

0

10²

7

10⁰

Irr

5

4

Qrr

trr

3

2

VCC=300V

IB1=400mA

IB2=–4A

Tj=25°C

Tj=125°C

10¹

7

10 ^–1

5

4

3

10³

10⁰

10¹

10²

2 3 4 5 7

10¹

3 4 5 7

10²

2

3 4 5 7

2

3 4 5 7

CONDUCTION TIME (CYCLES AT 60Hz)

FORWARD CURRENT IF (A)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (DIODE)

10⁰2 3 45 710¹

2

0.40

0.32

0.24

0.16

0.08

0

10 ^–3

10 ^–2

10 ^–1

2 345 7

2 3 45 7

2 345 7

10⁰

TIME (s)

Feb.1999

型号:	QM200DY-HB
生命周期：	Obsolete
IHS 制造商：	MITSUBISHI ELECTRIC CORP
包装说明：	FLANGE MOUNT, R-PUFM-X15
Reach Compliance Code：	unknown
风险等级：	5.81
Is Samacsys：	N
最大集电极电流 (IC)：	200 A
配置：	COMPLEX
最小直流电流增益 (hFE)：	750
最大降落时间（tf）：	2000 ns
JESD-30 代码：	R-PUFM-X15
元件数量：	2
端子数量：	15
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	NPN
最大功率耗散 (Abs)：	1240 W
认证状态：	Not Qualified
子类别：	BIP General Purpose Power
表面贴装：	NO
端子形式：	UNSPECIFIED
端子位置：	UPPER
晶体管元件材料：	SILICON
VCEsat-Max：	2.5 V
Base Number Matches：	1

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