QM300DY-24原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

MITSUBISHI TRANSISTOR MODULES

QM300DY-24

HIGH POWER SWITCHING USE

INSULATED TYPE

QM300DY-24

• IC

Collector current ........................ 300A

• VCEX Collector-emitter voltage ......... 1200V

• hFE DC current gain...............................75

• Insulated Type

• UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

114

21.5

27

25

2–M6

B2X

M8

B

E²

2

18

C

1

C2E1

E

2

C1

C2E1

E2

14

7

8

5.5

B

1

X

E1

B

1

93

17

4–φ6.5

Tab#110, t=0.5

Tab#187,

t=0.8

21

8

17

LABEL

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM300DY-24

HIGH POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

IC

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Conditions

Ratings

1200

7

Unit

V

IC=1A, VEB=2V

VEB=2V

V

Emitter open

Collector open

DC

V

300

A

–IC

Collector reverse current

Collector dissipation

Base current

DC (forward diode current)

TC=25°C

300

A

PC

1980

16

W

A

IB

DC

Surge collector reverse current

(forward diode current)

–ICSM

Peak value of one cycle of 60Hz (half wave)

3000

A

Tj

Junction temperature

Storage temperature

Isolation voltage

–40~+150

–40~+125

2500

°C

Tstg

Viso

Charged part to case, AC for 1 minute

Main terminal screw M6

V

1.96~2.94

20~30

N·m

kg·cm

N·m

kg·cm

N·m

kg·cm

g

8.83~10.8

90~110

1.96~2.94

20~30

—

Mounting torque

Weight

Main terminal screw M8

Mounting screw M6

Typical value

1100

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Limits

Typ.

—

Symbol

ICEX

Parameter

Test conditions

Unit

Min.

—

Max.

4.0

400

3.0

3.5

1.8

—

Collector cutoff current

VCE=1200V, VEB=2V

mA

V

—

ICBO

Collector cutoff current

VCB=1200V,Emitter open

VEB=7V

—

IEBO

Emitter cutoff current

—

VCE (sat)

VBE (sat)

–VCEO

hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

IC=300A, IB=6A

—

V

—

–IC=–300A (diode forward voltage)

IC=300A, VCE=5V

V

750

—

3.0

15

ton

µs

—

ts

Switching time

VCC=600V, IC=300A, IB1=–IB2=6.0A

µs

—

3.0

0.063

0.3

tf

µs

—

Rth (j-c) Q

Rth (j-c) R

Transistor part (per 1/2 module)

Diode part (per 1/2 module)

°C/W

Thermal resistance

(junction to case)

—

Contact thermal resistance

(case to fin)

—

0.04

Rth (c-f)

Conductive grease applied (per 1/2 module)

°C/W

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM300DY-24

HIGH POWER SWITCHING USE

INSULATED TYPE

PERFORMANCE CURVES

COMMON EMITTER OUTPUT

CHARACTERISTICS (TYPICAL)

DC CURRENT GAIN VS.

COLLECTOR CURRENT (TYPICAL)

10⁴

7

500

400

300

200

100

0

5

3

2

I

B

=6.0A

V

CE=5.0V

IB

=3.0A

10³

7

5

V

CE=2.8V

3

2

10²

7

5

IB=0.5A

3

T

j

=25°C

=125°C

2

T

Tj=25°C

10¹

10⁰2 3 57 10¹2 3 5 710²2 3 5 7 10³

0

1

2

3

4

5

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT IC (A)

COMMON EMITTER INPUT

CHARACTERISTIC (TYPICAL)

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

10¹

10²

7

5

7

5

3

2

4

VBE(sat)

3

2

10¹

7

5

10⁰

7

3

2

VCE(sat)

10⁰

7

5

4

3

2

5

IB=6A

3

V

CE=2.8V

Tj

=25°C

2

Tj=25°C

Tj

=125°C

10 ^–1

1.8

2.2

2.6

3.0

3.4

3.8

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

BASE-EMITTER VOLTAGE VBE (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE (TYPICAL)

SWITCHING TIME VS. COLLECTOR

CURRENT (TYPICAL)

10²

7

5

4

V

CC=600V

5

I

B1=–IB2=6A

IC=300A

3

2

ts

10¹

7

3

2

5

IC=200A

3

2

10⁰

7

5

tf

IC=100A

1

0

3

T

j

=25°C

=125°C

T

j

=25°C

=125°C

ton

2

T

j

10 ^–1

10

10⁰

10¹

10⁰

10¹

10²

10³

2 3 45 7

^–22 3 5 7 ^–12 3 5 7

10

2 3 5 7

2 3 457

2 3 45 7

BASE CURRENT IB (A)

COLLECTOR CURRENT IC (A)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM300DY-24

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME VS. BASE

CURRENT (TYPICAL)

REVERSE BIAS SAFE OPERATING AREA

10²

7

640

VCC=600V

I^B1=6A

560

480

400

320

240

5

I^C=300A

IB2=–6A

4

Tj=25°C

Tj=125°C

3

2

IB2=–12A

ts

10¹

7

tf

5

4

160

80

0

3

2

Tj=125°C

400

10⁰

10 ^–1

2

3 4 5 7 10⁰

2

3 4 5 7 10¹

0

800

1200

1600

BASE REVERSE CURRENT –IB2 (A)

COLLECTOR-EMITTER VOLTAGE VCE (V)

FORWARD BIAS SAFE OPERATING AREA

DERATING FACTOR OF F. B. S. O. A.

10³

100

7

5

SECOND

BREAKDOWN

AREA

90

80

70

60

50

40

30

20

10

0

50µs

3

2

100µs

10²

7

5

COLLECTOR

DISSIPATION

3

2

10¹

7

5

3

TC=25°C

NON-REPETITIVE

2

10⁰

10⁰2 3457 10¹2 3 45 7 10²2 345 710³

0

20 40 60 80 100 120 140 160

COLLECTOR-EMITTER VOLTAGE VCE (V)

CASE TEMPERATURE TC (°C)

REVERSE COLLECTOR CURRENT VS.

COLLECTOR-EMITTER REVERSE

VOLTAGE (DIODE FORWARD

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (TRANSISTOR)

10⁰2 3 457 10¹

CHARACTERISTICS) (TYPICAL)

10³

7

0.08

5

0.07

0.06

0.05

0.04

0.03

3

2

10²

7

5

3

2

10¹

7

5

Tj=25°C

Tj=125°C

0.02

0.01

0

3

2

10⁰

0

0.4

0.8

1.2

1.6

2.0

10 ^–32 3 57 10 ^–22 3 5 710 ^–12 3 5 7

TIME (s)

COLLECTOR-EMITTER REVERSE VOLTAGE

–VCEO (V)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM300DY-24

HIGH POWER SWITCHING USE

INSULATED TYPE

RATED SURGE COLLECTOR REVERSE CURRENT

(DIODE FORWARD SURGE CURRENT)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE (TYPICAL)

10³

10²

3200

2800

2400

2000

1600

1200

800

7

5

V

CC=600V

IB1=–IB2=6A

3

2

T

j

=25°C

Irr

j=125°C

10²

10¹

7

5

3

2

10¹

7

5

Q

rr

10⁰

3

t

rr

400

2

10 ^–1

10⁰

0

3 4 5 7 10¹

2

3 4 5 7 10²

10⁰

10⁰2 3 5 710¹2 3 5 710²2 3 5 7 10³

2

CONDUCTION TIME (CYCLES AT 60Hz)

FORWARD CURRENT IF (A)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (DIODE)

10⁰2 3 57 10¹2 3 57

0.40

0.32

0.24

0.16

0.08

0

10 ^–32 3 5710 ^–22 3 5 710 ^–12 3 5 7 10⁰

TIME (s)

Feb.1999

型号:	QM300DY-24
生命周期：	Obsolete
IHS 制造商：	MITSUBISHI ELECTRIC CORP
包装说明：	FLANGE MOUNT, R-PUFM-X15
Reach Compliance Code：	unknown
风险等级：	5.81
Is Samacsys：	N
最大集电极电流 (IC)：	300 A
配置：	COMPLEX
最小直流电流增益 (hFE)：	75
最大降落时间（tf）：	3000 ns
JESD-30 代码：	R-PUFM-X15
元件数量：	2
端子数量：	15
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	NPN
最大功率耗散 (Abs)：	1980 W
认证状态：	Not Qualified
子类别：	BIP General Purpose Power
表面贴装：	NO
端子形式：	UNSPECIFIED
端子位置：	UPPER
晶体管元件材料：	SILICON
VCEsat-Max：	3 V
Base Number Matches：	1

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