QM3014D现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

MITSUBISHI TRANSISTOR MODULES

QM30CY-H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

QM30CY-H

• IC

Collector current .......................... 30A

• VCEX Collector-emitter voltage ........... 600V

• hFE DC current gain...............................75

• Insulated Type

• UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

UPS, CVCF

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

94

B2

E2

(7)

80

(7)

20

27

φ6.5

B

2

E

2

C2

C1

E1E2

E

C2

E¹E2

C¹B¹

1

12

E1

B1

Tab#110,

t=0.5

M5

LABEL

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM30CY-H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

IC

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Conditions

Ratings

600

7

Unit

V

IC=1A, VEB=2V

VEB=2V

V

Emitter open

Collector open

DC

V

30

A

–IC

Collector reverse current

Collector dissipation

Base current

DC (forward diode current)

TC=25°C

30

A

PC

250

1.8

W

A

IB

DC

Surge collector reverse current

(forward diode current)

–ICSM

Peak value of one cycle of 60Hz (half wave)

300

A

Tj

Junction temperature

Storage temperature

Isolation voltage

–40~+150

–40~+125

2500

°C

Tstg

Viso

Charged part to case, AC for 1 minute

Main terminal screw M5

V

1.47~1.96

15~20

N·m

kg·cm

N·m

kg·cm

g

—

Mounting torque

Weight

1.96~2.94

20~30

Mounting screw M6

Typical value

210

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Limits

Typ.

—

Symbol

ICEX

Parameter

Test conditions

Unit

Min.

—

Max.

1.0

200

2.0

2.5

1.85

—

Collector cutoff current

VCE=600V, VEB=2V

VCB=600V, Emitter open

VEB=7V

mA

V

—

ICBO

Collector cutoff current

—

IEBO

Emitter cutoff current

—

VCE (sat)

VBE (sat)

–VCEO

hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

IC=30A, IB=0.4A

—

V

—

–IC=30A (diode forward voltage)

IC=30A, VCE=2V/5V

V

75/100

—

1.5

12

ton

µs

—

ts

Switching time

VCC=300V, IC=30A, IB1=–IB2=0.6A

µs

—

3.0

0.5

2.0

tf

µs

—

Rth (j-c) Q

Rth (j-c) R

Transistor part (per 1/2 module)

Diode part (per 1/2 module)

°C/W

Thermal resistance

(junction to case)

—

Contact thermal resistance

(case to fin)

—

0.15

Rth (c-f)

Conductive grease applied (per 1/2 module)

°C/W

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM30CY-H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

PERFORMANCE CURVES

COMMON EMITTER OUTPUT

CHARACTERISTICS (TYPICAL)

DC CURRENT GAIN VS.

COLLECTOR CURRENT (TYPICAL)

10³

7

100

80

60

40

20

0

Tj=25°C

V

CE=5.0V

5

4

3

2

IB=2.0A

V

CE=2.0V

I

B

=1.0A

10²

7

B=0.5A

5

I

B=0.3A

4

3

2

IB=0.1A

T

j

=25°C

=125°C

3 4 5 7 10¹

T

j

10¹

10⁰

2

3 4 5 7 10²

0

1

2

3

4

5

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT IC (A)

COMMON EMITTER INPUT

CHARACTERISTIC (TYPICAL)

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

10¹

7

V

CE=2.0V

T

j=25°C

5

4

3

2

3

2

V

BE(sat)

10⁰

7

10⁰

7

V

CE(sat)

5

4

3

2

3

2

IB=0.4A

Tj=25°C

T

j

=125°C

10 ^–1

1.0

1.4

1.8

2.2

2.6

3.0

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

BASE-EMITTER VOLTAGE VBE (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE (TYPICAL)

SWITCHING TIME VS. COLLECTOR

CURRENT (TYPICAL)

10¹

7

5

4

3

2

1

0

T

j

=25°C

Tj=125°C

5

4

ts

3

2

10⁰

7

ton

5

t

f

IC=30A

4

3

2

T

j

=25°C

V

CC=300V

IC=20A

IC=10A

I

B1=–IB2=0.6A

Tj

=125°C

10 ^–1

3 4 5 7 10⁰

BASE CURRENT IB (A)

10 ^–2

10 ^–1

10⁰

2

3 4 5 7

2

3 4 5 7 10¹

2

3 4 5 7 10²

COLLECTOR CURRENT IC (A)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM30CY-H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME VS. BASE

CURRENT (TYPICAL)

REVERSE BIAS SAFE OPERATING AREA

70

3

2

VCC=300V

IB1=0.6A

IC=30A

60

50

40

30

20

10

0

10¹

7

Tj=25°C

Tj=125°C

ts

tf

IB2=–1A

–3A

Tj=125°C

5

4

3

2

–5A

10⁰

7

5

4

3

10 ^–1

2

3 4 5 7 10⁰

2

3 4 5 7 10¹

0

100 200 300 400 500 600 700

BASE REVERSE CURRENT –IB2 (A)

COLLECTOR-EMITTER VOLTAGE VCE (V)

FORWARD BIAS SAFE OPERATING AREA

DERATING FACTOR OF F. B. S. O. A.

10²

100

100µs

7

5

SECOND

BREAKDOWN

AREA

90

80

70

60

50

40

30

20

10

0

3

2

10¹

7

5

COLLECTOR

DISSIPATION

3

2

10⁰

7

5

3

TC=25°C

NON–REPETITIVE

2

10 ^–1

10⁰2 345 710¹2 3 45 7 10²2 345 710³

0

20 40 60 80 100 120 140 160

COLLECTOR-EMITTER VOLTAGE VCE (V)

CASE TEMPERATURE TC (°C)

REVERSE COLLECTOR CURRENT VS.

COLLECTOR-EMITTER REVERSE

VOLTAGE (DIODE FORWARD

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (TRANSISTOR)

10⁰2 3 45710¹2 3 45710²

CHARACTERISTICS) (TYPICAL)

10²

7

0.5

5

0.4

4

3

2

0.3

0.2

10¹

7

5

4

3

2

0.1

0

Tj=25°C

Tj=125°C

10⁰

10 ^–32 3 5 710 ^–22 3 5 710 ^–12 3 5 7 10⁰

TIME (s)

0.4

0.8

1.2

1.6

2.0

2.4

COLLECTOR-EMITTER REVERSE VOLTAGE

–VCEO (V)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM30CY-H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

RATED SURGE COLLECTOR REVERSE CURRENT

(DIODE FORWARD SURGE CURRENT)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE (TYPICAL)

10²

500

400

300

200

100

0

7

5

T

j

=25°C

V

CC=300V

T

=125°C

I

B1=–IB2=0.6A

3

2

10¹

7

5

I

rr

3

2

10⁰

7

5

10⁰

Q

rr

3

t

rr

2

10 ^–1

10⁰

10¹

10²

2 3 4 5 7

10⁰

10¹

10²

2

3 4 5 7

2 3 5 7

10³

CONDUCTION TIME (CYCLES AT 60Hz)

FORWARD CURRENT IF (A)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (DIODE)

10⁰2 3 45 710¹2 3 45

2.0

1.6

1.2

0.8

0.4

0

10 ^–32 345710 ^–22 3 45 710 ^–12 345 7 10⁰

TIME (s)

Feb.1999

型号:	QM3014M3
是否Rohs认证：	符合
生命周期：	Contact Manufacturer
包装说明：	SMALL OUTLINE, S-PDSO-F8
Reach Compliance Code：	unknown
风险等级：	5.76
雪崩能效等级（Eas）：	53 mJ
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	9.5 A
最大漏源导通电阻：	0.012 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-PDSO-F8
元件数量：	1
端子数量：	8
工作模式：	ENHANCEMENT MODE
最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	111 A
表面贴装：	YES
端子形式：	FLAT
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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