QM30DX-H各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

MITSUBISHI TRANSISTOR MODULES

QM30DY-24

MEDIUM POWER SWITCHING USE

INSULATED TYPE

QM30DY-24

• IC

Collector current .......................... 30A

• VCEX Collector-emitter voltage ......... 1200V

• hFE DC current gain...............................75

• Insulated Type

• UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

94

(7)

80

(7)

B

2

23

E2

φ6.5

B

E²

2

C

1

C2E1

E

2

E

B¹

1

C

2E1

C1

E2

12

E1

B

1

Tab#110,

t=0.5

M5

LABEL

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM30DY-24

MEDIUM POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

IC

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Conditions

Ratings

1200

7

Unit

V

IC=1A, VEB=2V

VEB=2V

V

Emitter open

Collector open

DC

V

30

A

–IC

Collector reverse current

Collector dissipation

Base current

DC (forward diode current)

TC=25°C

30

A

PC

300

2

W

A

IB

DC

Surge collector reverse current

(forward diode current)

–ICSM

Peak value of one cycle of 60Hz (half wave)

300

A

Tj

Junction temperature

Storage temperature

Isolation voltage

–40~+150

–40~+125

2500

°C

Tstg

Viso

Charged part to case, AC for 1 minute

Main terminal screw M5

V

1.47~1.96

15~20

N·m

kg·cm

N·m

kg·cm

g

—

Mounting torque

Weight

1.96~2.94

20~30

Mounting screw M6

Typical value

210

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Limits

Typ.

—

Symbol

ICEX

Parameter

Test conditions

Unit

Min.

—

75

—

Max.

1.0

200

3.0

3.5

1.8

—

Collector cutoff current

VCE=1200V, VEB=2V

mA

V

—

ICBO

Collector cutoff current

VCB=1200V, Emitter open

VEB=7V

—

IEBO

Emitter cutoff current

—

VCE (sat)

VBE (sat)

–VCEO

hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

IC=30A, IB=0.6A

—

V

—

–IC=30A (diode forward voltage)

IC=30A, VCE=5V

V

—

2.5

15

ton

µs

—

ts

Switching time

VCC=600V, IC=30A, IB1=–IB2=0.6A

µs

—

3.0

0.4

1.5

tf

µs

—

Rth (j-c) Q

Rth (j-c) R

Transistor part (per 1/2 module)

Diode part (per 1/2 module)

°C/W

Thermal resistance

(junction to case)

—

Contact thermal resistance

(case to fin)

—

0.15

Rth (c-f)

Conductive grease applied (per 1/2 module)

°C/W

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM30DY-24

MEDIUM POWER SWITCHING USE

INSULATED TYPE

PERFORMANCE CURVES

COMMON EMITTER OUTPUT

CHARACTERISTICS (TYPICAL)

DC CURRENT GAIN VS.

COLLECTOR CURRENT (TYPICAL)

50

40

30

20

10

0

3

2

T

j

=25°C

T

j

=25°C

=125°C

I

B

=1.0A

=0.6A

V

CE=5.0V

10³

7

IB

5

4

IB

=0.4A

=0.2A

=0.1A

3

2

10²

7

5

4

3

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

0

1

2

3

4

5

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT IC (A)

COMMON EMITTER INPUT

CHARACTERISTIC (TYPICAL)

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

1

10¹

7

10

T

j

=25°C

7

V

CE=2.8V

5

4

3

2

V

BE(sat)

CE(sat)

3

2

10⁰

7

10⁰

7

V

5

4

3

2

3

2

T

j

=25°C

T

j

=125°C

I

B

=0.6A

10^–1

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

1.4

1.8

2.2

2.6

3.0

3.4

BASE-EMITTER VOLTAGE VBE (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE (TYPICAL)

SWITCHING TIME VS. COLLECTOR

CURRENT (TYPICAL)

3

2

5

4

t

s

10¹

7

T

Tj

j

=25°C

=125°C

CC=600V

B1=–IB2=0.6A

5

3

2

4

V

I

3

2

ton

IC=30A

IC=20A

10⁰

7

tf

IC=10A

1

0

Tj=25°C

T^j=125°C

5

4

3

10 ^–2

10 ^–1

10⁰10¹

2 345 7

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

2 3 45 7

2 345 7

BASE CURRENT IB (A)

COLLECTOR CURRENT IC (A)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM30DY-24

MEDIUM POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME VS. BASE

CURRENT (TYPICAL)

REVERSE BIAS SAFE OPERATING AREA

80

3

2

Tj=125°C

t

s

70

60

50

40

30

20

10

0

10¹

7

IB2=–1A

5

t

f

4

3

2

T

j

=25°C

=125°C

10⁰

7

j

V

I

CC=600V

B1=0.6A

IC=30A

5

4

3

10^–1

2

3 4 5 7 10⁰

2

3 4 5 7 10¹

0

200 400 600 8001000120014001600

BASE REVERSE CURRENT –IB2 (A)

COLLECTOR-EMITTER VOLTAGE VCE (V)

FORWARD BIAS SAFE OPERATING AREA

DERATING FACTOR OF F. B. S. O. A.

10²

100

7

5

SECOND

BREAKDOWN

AREA

90

80

70

60

50

3

2

10¹

7

5

COLLECTOR

DISSIPATION

3

2

10⁰

7

5

40

30

20

10

0

3

2

T

C

=25°C

NON REPETITIVE

10 ^–1

10⁰

10¹

10²10³

2 345 7

0

20 40 60 80 100 120 140 160

2 345 7

2 3 45 7

COLLECTOR-EMITTER VOLTAGE VCE (V)

CASE TEMPERATURE TC (°C)

REVERSE COLLECTOR CURRENT VS.

COLLECTOR-EMITTER REVERSE

VOLTAGE (DIODE FORWARD

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (TRANSISTOR)

10¹

10⁰

0.5

2 3 45 7

2 3 4 5

CHARACTERISTICS) (TYPICAL)

10²

7

5

0.4

4

3

2

0.3

0.2

10¹

7

5

4

3

2

0.1

0

T

j

=25°C

T

j

=125°C

10⁰

10 ^–32 3 45 710 ^–22 3 4 5 710 ^–12 3 4 5 7 10⁰

0.4

0.8

1.2

1.6

2.0

2.4

TIME (s)

COLLECTOR-EMITTER REVERSE VOLTAGE

–VCEO (V)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM30DY-24

MEDIUM POWER SWITCHING USE

INSULATED TYPE

RATED SURGE COLLECTOR REVERSE CURRENT

(DIODE FORWARD SURGE CURRENT)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE (TYPICAL)

10²

500

400

300

200

100

0

T

j

=25°C

7

5

T

j

=125°C

3

2

I

rr

10¹

7

5

3

2

10⁰

7

5

Q

rr

10⁰

3

V

I

CC=600V

B1=–IB2=0.6A

trr

2

10 ^–1

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

10⁰2 3 4 5 710¹2 3 45 7 10²2 3 45 7 10³

CONDUCTION TIME (CYCLES AT 60Hz)

FORWARD CURRENT IF (A)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (DIODE )

10⁰

10¹

2 3 45 7

2 3

45 7

2.0

1.6

1.2

0.8

0.4

0

10 ^–32 3 45 710 ^–22 3 45 710 ^–12 3 45 7 10⁰

TIME (s)

Feb.1999

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