QM50DY-24B原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

MITSUBISHI TRANSISTOR MODULES

QM50DY-24B

MEDIUM POWER SWITCHING USE

INSULATED TYPE

QM50DY-24B

• IC

Collector current .......................... 50A

• VCEX Collector-emitter voltage ......... 1200V

• hFE DC current gain.............................750

• Insulated Type

• UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

107.5

93 ^0.25

B2

E2

2–φ6.5

12

C1

C2E1

E2

C2E1

C1

E2

23.5

23

8

23

8

5

E1

B1

3–M5

22

15

22

21

Tab#110, t=0.5

LABEL

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM50DY-24B

MEDIUM POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

IC

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Conditions

Ratings

1200

7

Unit

V

IC=1A, VEB=2V

VEB=2V

V

Emitter open

Collector open

DC

V

50

A

–IC

Collector reverse current

Collector dissipation

Base current

DC (forward diode current)

TC=25°C

50

A

PC

400

3

W

A

IB

DC

Surge collector reverse current

(forward diode current)

–ICSM

Peak value of one cycle of 60Hz (half wave)

50

A

Tj

Junction temperature

Storage temperature

Isolation voltage

–40~+150

–40~+125

2500

°C

Tstg

Viso

Charged part to case, AC for 1 minute

Main terminal screw M5

V

1.47~1.96

15~20

N·m

kg·cm

N·m

kg·cm

g

—

Mounting torque

Weight

1.96~2.94

20~30

Mounting screw M6

Typical value

250

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Limits

Typ.

—

Symbol

ICEX

Parameter

Test conditions

Unit

Min.

—

Max.

2.0

50

Collector cutoff current

VCE=1200V, VEB=2V

mA

V

—

ICBO

Collector cutoff current

VCB=1200V, Emitter open

VEB=7V

—

IEBO

Emitter cutoff current

—

4.0

1.8

—

VCE (sat)

VBE (sat)

–VCEO

hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

IC=50A, IB=67mA

—

V

—

–IC=50A (diode forward voltage)

IC=50A, VCE=4V

V

750

—

2.5

15

ton

µs

—

ts

Switching time

VCC=600V, IC=50A, IB1=100mA, IB2=–1.0A

µs

—

3.0

0.31

1.2

tf

µs

—

Rth (j-c) Q

Rth (j-c) R

Transistor part (per 1/2 module)

Diode part (per 1/2 module)

°C/W

Thermal resistance

(junction to case)

—

Contact thermal resistance

(case to fin)

—

0.13

Rth (c-f)

Conductive grease applied (per 1/2 module)

°C/W

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM50DY-24B

MEDIUM POWER SWITCHING USE

INSULATED TYPE

PERFORMANCE CURVES

COMMON EMITTER OUTPUT

CHARACTERISTICS (TYPICAL)

DC CURRENT GAIN VS.

COLLECTOR CURRENT (TYPICAL)

10⁴

7

100

80

60

40

20

0

Tj=25°C

T^j=125°C

Tj=25°C

VCE=10V

5

IB=400mA

IB=200mA

IB=67mA

4

3

2

10³

7

VCE=4V

IB=20mA

IB=10mA

5

4

3

2

10²

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

0

1

2

3

4

5

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT IC (A)

COMMON EMITTER INPUT

CHARACTERISTIC (TYPICAL)

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

1

10⁰

10

VCE=4V

Tj=25°C

7

5

VBE(sat)

4

3

2

3

2

10^–1

7

10⁰

7

VCE(sat)

5

4

3

2

3

2

IB=67mA

Tj=25°C

T^j=125°C

10^–1

10^–2

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

2.8

3.2

3.6

4.0

4.4

4.8

BASE-EMITTER VOLTAGE VBE (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE (TYPICAL)

SWITCHING TIME VS. COLLECTOR

CURRENT (TYPICAL)

3

2

5

4

VCC=600V

IB1=100mA

IB2=–1A

ts

10¹

7

5

3

2

Tj=25°C

T^j=125°C

4

3

2

IC=30A

IC=50A

10⁰

7

5

4

3

tf

1

0

Tj=25°C

T^j=125°C

10 ^–2

ton

10 ^–3

10 ^–1

10⁰

2 345 7

3 4 5 7 10¹

2

3 4 5 7 10²

2 3

2 3 45 7

2 345 7

BASE CURRENT IB (A)

COLLECTOR CURRENT IC (A)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM50DY-24B

MEDIUM POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME VS. BASE

CURRENT (TYPICAL)

REVERSE BIAS SAFE OPERATING AREA

120

100

80

60

40

20

0

3

2

T

=125°C

IB^j2=–1A

t

s

10¹

7

5

t

f

4

3

2

V

CC=600V

10⁰

7

IC

=50A

I

B1=100mA

T

j

=25°C

5

4

3

j

=125°C

10^–1

2

3 4 5 7 10⁰

2

3 4 5 7 10¹

0

200 400 600 800 1000 1200 1400

BASE REVERSE CURRENT –IB2 (A)

COLLECTOR-EMITTER VOLTAGE VCE (V)

FORWARD BIAS SAFE OPERATING AREA

DERATING FACTOR OF F. B. S. O. A.

2

100

SECOND

BREAKDOWN

AREA

10²

7

90

80

70

60

50

200µ

50µ

100µ

S

5

S

1m

S

3

2

S

DC

10¹

7

COLLECTOR

DISSIPATION

5

3

2

40

30

20

10

0

10⁰

7

T

C

=25°C

5

NON–REPETITIVE

3

2

2 3 5 710¹2 3 5 710²2 3 5 710³

2

0

20 40 60 80 100 120 140 160

COLLECTOR-EMITTER VOLTAGE VCE (V)

CASE TEMPERATURE TC (°C)

REVERSE COLLECTOR CURRENT VS.

COLLECTOR-EMITTER REVERSE

VOLTAGE (DIODE FORWARD

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (TRANSISTOR)

2 3 5 7

2 3 5 710²

10⁰

0.5

10

CHARACTERISTICS) (TYPICAL)

1

10²

7

5

0.4

4

3

2

0.3

0.2

10¹

7

5

4

3

2

0.1

0

T

1.6

j

=25°C

j=125°C

10⁰

10 ^–32 3 5 710 ^–22 3 5 710 ^–12 3 5 7 10⁰

0

0.4

0.8

1.2

2.0

TIME (s)

COLLECTOR-EMITTER REVERSE VOLTAGE

–VCEO (V)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM50DY-24B

MEDIUM POWER SWITCHING USE

INSULATED TYPE

RATED SURGE COLLECTOR REVERSE CURRENT

(DIODE FORWARD SURGE CURRENT)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE (TYPICAL)

10⁰

10 ^–1

10²

7

500

400

300

200

100

0

5

4

I

rr

3

2

10¹

7

Q

rr

5

4

3

2

trr

V

I

CC=600V

B1=100mA

B2=–1A

T

j

=25°C

=125°C

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

CONDUCTION TIME (CYCLES AT 60Hz)

FORWARD CURRENT IF (A)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (DIODE )

⁰2 3 5 7

2 3

10

10⁰

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

10 ^–3

10 ^–2

10 ^–1

2 3 5 7

10⁰

TIME (s)

Feb.1999

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