QM75HA-H各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

MITSUBISHI TRANSISTOR MODULES

QM75HA-H

HIGH POWER SWITCHING USE

INSULATED TYPE

QM75HA-H

• IC

Collector current .......................... 75A

• VCEX Collector-emitter voltage ........... 600V

• hFE DC current gain...............................75

• Insulated Type

• UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

53.5

43.3

C

8

B

E

B

C

R6

φ5.3

E

8

M4

33

3.5

LABEL

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM75HA-H

HIGH POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

IC

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Conditions

Ratings

600

7

Unit

V

IC=1A, VEB=2V

VEB=2V

V

Emitter open

Collector open

DC

V

75

A

–IC

Collector reverse current

Collector dissipation

Base current

DC (forward diode current)

TC=25°C

75

A

PC

350

4.5

W

A

IB

DC

Surge collector reverse current

(forward diode current)

–ICSM

Peak value of one cycle of 60Hz (half wave)

750

A

Tj

Junction temperature

Storage temperature

Isolation voltage

–40~+150

–40~+125

2500

°C

Tstg

Viso

Charged part to case, AC for 1 minute

Main terminal screw M4

V

0.98~1.47

10~15

N·m

kg·cm

N·m

kg·cm

g

—

Mounting torque

Weight

1.47~1.96

15~20

Mounting screw M5

Typical value

90

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Limits

Typ.

—

Symbol

ICEX

Parameter

Test conditions

Unit

Min.

—

Max.

1.0

200

2.0

2.5

1.85

—

Collector cutoff current

VCE=600V, VEB=2V

VCB=600V, Emitter open

VEB=7V

mA

V

—

ICBO

Collector cutoff current

—

IEBO

Emitter cutoff current

—

VCE (sat)

VBE (sat)

–VCEO

hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

IC=75A, IB=1A

—

V

—

–IC=75A (diode forward voltage)

IC=75A, VCE=2V/5V

V

75/100

—

2.5

12

ton

µs

—

ts

Switching time

VCC=300V, IC=75A, IB1=–IB2=1.5A

µs

—

3.0

0.35

1.3

tf

µs

—

Rth (j-c) Q

Rth (j-c) R

Transistor part

Diode part

°C/W

Thermal resistance

(junction to case)

—

Contact thermal resistance

(case to fin)

—

0.15

Rth (c-f)

Conductive grease applied

°C/W

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM75HA-H

HIGH POWER SWITCHING USE

INSULATED TYPE

PERFORMANCE CURVES

COMMON EMITTER OUTPUT

CHARACTERISTICS (TYPICAL)

DC CURRENT GAIN VS.

COLLECTOR CURRENT (TYPICAL)

200

180

160

140

120

100

80

2

10³

7

VCE=5.0V

VCE=2.0V

IB=2.0A

IB=1.5A

5

4

3

2

IB=1.0A

IB=0.5A

10²

7

60

40

5

4

Tj=25°C

Tj=125°C

20

3

2

Tj=25°C

0

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

0

1

2

3

4

5

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT IC (A)

COMMON EMITTER INPUT

CHARACTERISTIC (TYPICAL)

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

10¹

7

10¹

7

5

4

3

2

3

2

VBE(sat)

10⁰

7

10⁰

7

5

VCE(sat)

4

3

2

3

2

IB=1A

VCE=2.0V

Tj=25°C

Tj=125°C

10 ^–1

10¹

10^–1

2

3 4 5 7 10²

2

3 4 5 7 10³

1.0

1.4

1.8

2.2

2.6

3.0

BASE-EMITTER VOLTAGE VBE (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE (TYPICAL)

SWITCHING TIME VS. COLLECTOR

CURRENT (TYPICAL)

2

5

4

3

2

ts

10¹

7

VCC=300V

IB1=–IB2=1.5A

Tj=25°C

5

IC=100A

4

3

2

Tj=125°C

IC=30A

10⁰

7

tf

IC=75A

1

0

5

IC=50A

4

Tj=25°C

Tj=125°C

ton

3

2

0

1

10 ^–22 3 45 710 ^–12 3 45 710 2 3 45 7 10

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

BASE CURRENT IB (A)

COLLECTOR CURRENT IC (A)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM75HA-H

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME VS. BASE

CURRENT (TYPICAL)

REVERSE BIAS SAFE OPERATING AREA

2

160

V

CC=300V

B1=1.5A

=75A

I

140

120

100

80

10¹

7

C

I

B2=–2A

t

s

–5A

5

4

3

2

t

f

60

10⁰

7

40

5

4

T

j

=25°C

20

3

2

T

j=125°C

T

j=125°C

0

10 ^–1

2

3 4 5 7 10⁰

2

3 4 5 7 10¹

0

100 200 300 400 500 600 700 800

BASE REVERSE CURRENT –IB2 (A)

COLLECTOR-EMITTER VOLTAGE VCE (V)

FORWARD BIAS SAFE OPERATING AREA

DERATING FACTOR OF F. B. S. O. A.

3

7

5

3

2

10

100

SECOND

BREAKDOWN

AREA

90

80

70

60

50

40

30

20

10

0

tw=50µs

100µs

10

7

5

3

2

1

7

5

COLLECTOR

DISSIPATION

10

3

T

C

=25°C

2

NON–REPETITIVE

0

10

1

2

3

10

0

20 40 60 80 100 120 140 160

2 345 7

COLLECTOR-EMITTER VOLTAGE VCE (V)

CASE TEMPERATURE TC (°C)

REVERSE COLLECTOR CURRENT VS.

COLLECTOR-EMITTER REVERSE

VOLTAGE (DIODE FORWARD

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (TRANSISTOR)

2 3 45 7

0

1

10

CHARACTERISTICS) (TYPICAL)

10²

7

0.5

5

0.4

0.3

0.2

4

3

2

10¹

7

5

4

3

2

0.1

0

T

j

=25°C

Tj=125°C

10⁰

0

10 ^–32 3 45 710 ^–22 3 45 710 ^–12 3 45 7 10

0

0.4

0.8

1.2

1.6

2.0

TIME (s)

COLLECTOR-EMITTER REVERSE VOLTAGE

–VCEO (V)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM75HA-H

HIGH POWER SWITCHING USE

INSULATED TYPE

RATED SURGE COLLECTOR REVERSE CURRENT

(DIODE FORWARD SURGE CURRENT)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE (TYPICAL)

10²

10

1

800

700

600

500

400

300

200

100

0

V

CC=300V

7

I

B1=–IB2=1.5A

5

4

T

j

=25°C

=125°C

I

rr

T

3

2

Q

rr

0

10¹

7

10

5

4

3

2

trr

10 ^–1

2

10⁰

10

3 4 5 7

0

1

2

3 4 5 7 10¹

2

3 4 5 7 10²

2

3 4 5 7

2

CONDUCTION TIME (CYCLES AT 60Hz)

FORWARD CURRENT IF (A)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (DIODE)

0

1

10

2 3 45 7

2 3 457

2.0

1.6

1.2

0.8

0.4

0

10 ^–3

10 ^–2

2 3 45 7

10 ^–1

10

2 3 45 7

TIME (s)

Feb.1999

型号:	QM75HA-H
生命周期：	Obsolete
IHS 制造商：	MITSUBISHI ELECTRIC CORP
包装说明：	FLANGE MOUNT, R-PUFM-X3
Reach Compliance Code：	unknown
风险等级：	5.82
Is Samacsys：	N
最大集电极电流 (IC)：	75 A
配置：	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：	75
最大降落时间（tf）：	3000 ns
JESD-30 代码：	R-PUFM-X3
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	NPN
最大功率耗散 (Abs)：	350 W
认证状态：	Not Qualified
子类别：	BIP General Purpose Power
表面贴装：	NO
端子形式：	UNSPECIFIED
端子位置：	UPPER
晶体管元件材料：	SILICON
VCEsat-Max：	2 V
Base Number Matches：	1

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