QS6U22芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

当前位置：IC37首页_>Q字母起始型号索引_>Q字母起始型号索引第34页更新时间：2024-10-24 08:30:09

产品型号QS6U22的概述

芯片QS6U22概述 QS6U22是一款高性能的集成电路（IC），广泛应用于多种电子设备中，尤其是在通信、消费电子和工业控制领域。该芯片以其卓越的数据处理能力、低功耗特性和高稳定性而闻名，受到工业界和研发人员的青睐。QS6U22的设计目的在于提高系统的整体性能，同时实现小型化，以适应当今电子设备日益紧凑的设计需求。芯片QS6U22的详细参数 QS6U22具有多种关键参数，使其适用于广泛的应用场景。主要技术参数如下： - 工作电压：通常在3V至5V之间，支持多种电源配置。 - 工作温度范围：芯片可以在-40°C至85°C的环境温度下稳定工作，适合恶劣环境。 - 最大功耗：在典型应用情况下，功耗可低至数毫瓦，这使得其在移动设备中表现优异。 - 处理速度：芯片的主频通常为几十MHz，可以满足大多数中低速应用的需求。 - 存储容量：QS6U22内置的闪存和RAM容量可根据应用需求进行选择，最...

产品型号QS6U22的Datasheet PDF文件预览

QS6U22

Transistors

Small switching (−20V, −1.5A)

QS6U22

!External dimensions (Unit : mm)

!Features

1) The QS6U22 combines Pch MOSFET with a

Schottky barrier diode in a single TSMT6 package.

2) Pch Treueh MOSFET have a low on-state resistance

with a fast switching.

TSMT6

2.8

1.6

1pin mark

3) Nch Treueh MOSFET is reacted a low voltage drive

(4V).

4) The Independently connected Schottky barrier diode

have a low forward voltage.

Each lead has same dimensions

Abbreviated symbol : U22

!Applications

Load switch, DC / DC conversion

!Structure

!Equivalent circuit

Silicon P-channel MOSFET

Schottky Barrier DIODE

(6)

(5)

(4)

!Packaging specifications

Package

Taping

Type

Code

(1) Anode

(2) Source

(3) Gate

Basic ordering unit (pieces)

3000

QS6U22

(1)

(2)

(3)

(4) Drain

(5) N / C

(6) Cathode

1 ESD PROTECTION DIODE

2 BODY DIODE

A protection diode has been in between the gate and

the source to protect against static electricity when the product

is in use. Use the protection circuit when rated voltages are exceeded.

!Absolute maximum ratings (Ta=25°C)

MOSFET

Parameter

Drain-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

−20

Unit

Gate-source voltage

±12

Continuous

Pulsed

±1.5

±6.0

−0.75

−6.0

150

Drain current

I_DP

Source current

(Body diode)

Continuous

Pulsed

I_S

I_SP

Channel temperature

Tch

°C

Parameter

Symbol

V_RM

V_R

Limits

Unit

Repetitive peak reverse voltage

Reverse voltage

Forward current

I_F

0.7

Forward current surge peak

Junction temperature

MOSFET AND Di

I_FSM

3.0

150

°C

Parameter

Symbol

P_D

Limits

1.25

Unit

W / Total

°C

Total power dissipation

Range of Storage temperature

Tstg

−55 to +150

1 Pw≤10µs, Duty cycle≤1% 2 60Hz 1cyc. 3 Total mounted on a ceramic board

1/3

QS6U22

Transistors

!Electrical characteristics (Ta=25°C)

MOSFET

Parameter

Symbol Min. Typ. Max.

Conditions

Unit

µA

Gate-source leakage

I_GSS

−

±10

−

_GS=±12V, V_DS=0V

Drain-source breakdown voltage V_{(BR) DSS}−20

I_D= −1mA, V_GS=0V

Zero gate voltage drain current

Gate threshold voltage

I_DSS

−

−1

−2.0

215

235

430

−

µA

_DS= −20V, V_GS=0V

_DS= −10V, I_D= −1mA

V_{GS (th)}−0.7

−

155

170

310

−

mΩ I_D= −1.5A, V_GS= −4.5V

mΩ I_D= −1.5A, V_GS= −4V

mΩ I_D= −0.75A, V_GS= −2.5V

Static drain-source on-state

resistance

R_{DS (on)}

−

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

1.0

−

_DS= −10V, I_D= −0.75A

270

3.0

0.8

0.85

−

_DS= −10V

C_oss

C_rss

t_{d (on)}

−

_GS=0V

−

f=1MHz

−

= −0.75A

DD −15V

−

GS= −4.5V

Turn-off delay time

Fall time

t_{d (off)}

t_f

−

L=20Ω

−

G=10Ω

V_DD−15V

_GS= −4.5V

=10Ω / R

= −1.5A

Total gate charge

Gate-source charge

Q_g

−

Q_gs

Q_gd

−

G=10Ω

Gate-drain charge

Pulsed

−

!Body diode (Source-drain)

MOSFET

Parameter

Forward voltage

Symbol Min. Typ. Max.

V_SD−1.2

Conditions

Unit

−

I_S= −0.75A, V_GS=0V

Parameter

Symbol Min. Typ. Max.

Conditions

Unit

Forward voltage drop

Reverse leakage

−

0.49

200

I_F=0.7A

µA V_R=20V

!Electrical characteristic curves

10000

1000

100

V_GS

Pulsed

= −10V

_DS= −10V

V_GS

= −4.5V

Pulsed

0.1

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

1000

0.01

0.001

100

0.1

1.5

2.5

3.5

4.5

0.1

DRAIN CURRENT : −I_D(A)

GATE-SOURCE VOLTAGE : −V_GS(V)

DRAIN CURRENT : −I_D(A)

Fig.3 Static Drain-Source On-State

Fig.1 Typical Transfer Characteristics

Fig.2 Static Drain-Source On-State

Resistance vs. Drain Current (ΙΙ)

Resistance vs. Drain Current (Ι)

1200

1100

1000

900

800

700

600

500

400

300

200

10000

1000

100

10000

1000

100

Ta=25°C

Pulsed

Ta=25°C

Pulsed

V_GS

Pulsed

= −4V

_D= −1.2A

_D= −0.6A

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

_GS= −4.0V

_GS= −4.5V

_GS= −10V

0.1

GATE-SOURCE VOLTAGE : −V_GS(V)

DRAIN CURRENT : −I_D(A)

Fig.5 Static Drain-Source On-State

Resistance vs. Gate-Source

Voltage

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current (

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current (ΙΙΙ)

)

2/3

QS6U22

Transistors

1000

100

1000

100

Ta=25°C

f=1MHz

_GS=0V

_DD= −15V

_GS= −10A

Pulsed

_GS=0V

R_G=10Ω

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

0.1

Ciss

d (off)

d (on)

oss

rss

0.01

0.0

0.5

1.5

0.01

0.1

100

0.01

0.1

SOURCE-DRAIN VOLTAGE : −V_SD(V)

DRAIN-SOURCE VOLTAGE : −V_DS(V)

DRAIN CURRENT : −I_D(A)

Fig.7 Reverse Drain Current vs.

Source-Drain Voltage

Fig.8 Typical Capacitance vs.

Drain-Source Voltage

Fig.9 Switching Characteristics

Ta=25°C

_DD= −15V

I_D= −1.2A

_G=10Ω

Pulsed

0.2 0.4 0.6 0.8

1.2 1.4 1.6 1.8

TOTAL GATE CHARGE : Qg (nC)

Fig.10 Dynamic Input Characteristics

!Measurement circuits

Pulse Width

VGS

10%

50%

90%

10%

90%

10%

90%

D.U.T.

^DStd(on)

td(off)

toff

Fig.12 Switching Waveforms

Fig.11 Switching Time Measurement Circuit

G(Const)

D.U.T.

Qgd

Charge

Fig.14 Gate Charge Waveform

Fig.13 Gate Charge Measurement Circuit

3/3

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document use silicon as a basic material.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0

QS6U22相关文章

配单直通车

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

柒号芯城电子商务（深圳）有限公司服务专线: 0755-83209937 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

深圳市中利达电子科技有限公司服务专线: 0755-83200645/13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

QS6U22TR产品参数

型号:	QS6U22TR
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	2.29
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	1.5 A
最大漏极电流 (ID)：	1.5 A
最大漏源导通电阻：	0.235 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e1
湿度敏感等级：	1
元件数量：	1
端子数量：	6
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1.25 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	10
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号QS6U22的概述

产品型号QS6U22的Datasheet PDF文件预览

QS6U22相关产品

QS6U22相关文章

IC37:专业IC行业平台