QSC113芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

产品型号QSC113的概述

芯片QSC113的概述随着现代电子技术的不断发展，芯片作为信息处理、数据传输和信号传递的重要元器件，在各类电子设备中发挥着至关重要的作用。QSC113作为一种专用集成电路（IC），以其出色的性能和应用广泛而受到电子工程师的青睐。QSC113是一种低噪声、高增益的运算放大器，具有优异的线性度和相对较高的带宽，广泛应用于信号处理、音频放大和传感器接口等领域。 QSC113的设计与应用紧紧围绕其高性能特征展开。此芯片在性能检验方面表现出了较高的可靠性和稳定性，使其成为许多高精度应用的首选设备。其结构设计简单，使得在不同的电路中应用时，具有良好的可扩展性和灵活性。芯片QSC113的详细参数 QSC113的技术参数具有明显的优势。首先，QSC113的增益带宽积达到数兆赫兹，这使得它在信号处理上能够提供较高的响应速度。其次，输入失调电压小于1 mV的特性使得其适用于各种精密测量应用。此外，QS...

产品型号QSC113的Datasheet PDF文件预览

PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

QSC112 QSC113 QSC114

PACKAGE DIMENSIONS

0.116 (2.95)

REFERENCE

SURFACE

0.193 (4.90)

0.052 (1.32)

0.032 (0.082)

0.030 (0.76)

NOM

0.800 (20.3)

MIN

0.050 (1.27)

EMITTER

SCHEMATIC

0.100 (2.54)

NOM

COLLECTOR

0.155 (3.94)

0.018 (0.46)

SQ. (2X)

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions

unless otherwise specified.

EMITTER

DESCRIPTION

The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package.

FEATURES

• Tight production distribution.

• Steel lead frames for improved reliability in solder mounting.

• Good optical-to-mechanical alignment.

• Plastic package is infrared transparent black to attenuate visible light.

• Mechanically and spectrally matched to the QECXXX LED.

• Black plastic body allows easy recognition from LED.

2001 Fairchild Semiconductor Corporation

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www.fairchildsemi.com

PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

QSC112 QSC113 QSC114

(T = 25°C unless otherwise specified)

ABSOLUTE MAXIMUM RATINGS

A

Parameter

Operating Temperature

Symbol

T_OPR

T_STG

T_SOL-I

T_SOL-F

V_CE

Rating

-40 to +100

240 for 5 sec

260 for 10 sec

30

Unit

°C

V

Storage Temperature

Soldering Temperature (Iron)^(2,3,4)

Soldering Temperature (Flow)^(2,3)

Collector-Emitter Voltage

Emitter-Collector Voltage

Power Dissipation⁽¹⁾

V_EC

5

V

P_D

100

mW

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16” (1.6mm) minimum from housing.

5. ! = 880 nm, AlGaAs.

ELECTRICAL / OPTICAL CHARACTERISTICS (T_A= 25°C)

PARAMETER

TEST CONDITIONS

SYMBOL

MIN

TYP

MAX

UNITS

Peak Sensitivity Wavelength

Reception Angle

!

880

±8

—

nm

Deg.

nA

V

PS

—

"

Collector-Emitter Dark Current

Collector-Emitter Breakdown

Emitter-Collector Breakdown

On-State On-State Collector QSC112

On-State On-State Collector QSC113

On-State On-State Collector QSC114

V_CE= 10 V, Ee = 0

I_C= 1 mA

I_CEO

—

30

100

—

BV_CEO

BV_ECO

I_E= 100 µA

5

—

V

1

4

Ee = 0.5 mW/cm²,

V_CE= 5 V⁽⁵⁾

I^C(ON)

2.40

4.00

9.60

—

mA

Ee = 0.5 mW/cm²,

I_C= 0.5 mA⁽⁵⁾

Saturation Voltage

V^CE(sat)

—

0.4

V

_CC= 5 V, R_L= 100 #

I_C= 2 mA

Rise Time

Fall Time

t_r

t_f

—

5.0

—

µs

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PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

QSC112 QSC113 QSC114

Figure 1. Light Current vs. Radiant Intensity

10²

Figure 2. Angular Response Curve

V

= 5V

CE

GaAs Light Source

90

100

80

110

70

120

60

130

50

10¹

40

140

150

160

170

30

20

10

10⁰

180

1.0

0

1.0

0.2

0.0

0.2

0.4

0.6

0.8

0.6

0.4

10^-1

0.1

1

2

E

- Radiant Intensity (mW/cm )

e

Figure 3. Dark Current vs. Collector - Emitter Voltage

Figure 4. Light Current vs. Collector - Emitter Voltage

10¹

10⁰

10¹

10⁰

10^-1

10^-2

2

I

= 1mW/cm

e

2

I

= 0.5mW/cm

e

2

= 0.2mW/cm

= 0.1mW/cm

e

2

I

10^-1

10^-2

10^-3

Normalized to:

= 5V

V

CE

2

I

e

= 0.5mW/cm

o

T

A

= 25 C

0.1

1

10

0

5

10

15

20

25

30

V_CE- Collector-Emitter Voltage (V)

Figure 5. Dark Current vs. Ambient Temperature

Normalized to:

10⁴

10³

10²

10¹

V

= 25V

o

CE

V

= 25V

CE

T

= 25 C

A

= 10V

V

CE

10⁰

10^-1

25

50

75

100

^oC

)

T_A- Ambient Temperature (

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PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

QSC112 QSC113 QSC114

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF

OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD

SEMICONDUCTOR CORPORATION. As used herein:

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical

implant into the body,or (b) support or sustain life,

and (c) whose failure to perform when properly

used in accordance with instructions for use provided

in labeling, can be reasonably expected to result in a

significant injury of the user.

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QSC113相关产品

QSC113-0040D QSC113-LF QSC113C6R0 QSC114 qsc114-nl QSC114C QSC1215 QSC133 QSC143 QSC34953LB01 QSC363S5C QSC363S5C-2 QSC5T50B QSC6010 QSC6010-A1 QSC6020 QSC6025 QSC6030 QSC6055 QSC6055-003 QSC6055-008 QSC6055-009 QSC6055-O-424CSP-TR-09-0 QSC6055/003 QSC6065 QSC6065-0-424CSP-MT-08 QSC6065-008 QSC6070 QSC6075 QSC6085 QSC6085-0 QSC6085-0-424CSP-TR-09-AA QSC6085-0-AA QSC6085-008 QSC6085-1 QSC6085-1-424CSP QSC6085-1-424CSP-TR-09-AA QSC6085-1-AA

型号:	QSC113
是否Rohs认证：	不符合
生命周期：	Obsolete
Reach Compliance Code：	unknown
风险等级：	5.69
Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SINGLE
最大暗电源：	100 nA
红外线范围：	YES
JESD-609代码：	e0
标称光电流：	2.4 mA
安装特点：	THROUGH HOLE MOUNT
功能数量：	1
最高工作温度：	100 °C
最低工作温度：	-40 °C
光电设备类型：	PHOTO TRANSISTOR
峰值波长：	880 nm
最大功率耗散：	0.1 W
最长响应时间：	0.000005 s
形状：	ROUND
尺寸：	3 mm
子类别：	Photo Transistors
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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