QSX7IC贸易商引脚图技术参数全新原装-中国IC网-芯三七

产品型号QSX7的Datasheet PDF文件预览

QSX7

Transistors

General purpose amplification (12V, 1.5A)

QSX7

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

2.8

1.6

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.

V^CE(sat)

200mV

At I^C= 500mA / IB = 25mA

Each lead has same dimensions

Abbreviated symbol : X07

zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

(6)

(5)

(4)

VCBO

VCEO

VEBO

Tr2

1.5

Collector current

∗1

∗2

∗3

500

1.25

mW/TOTAL

W/TOTAL

W/ELEMENT

°C

(1)

(2)

(3)

Power dissipation

0.9

Junction temperature

150

Range of storage temperature Tstg

−55 to +150

°C

Single pulse, P =1ms

∗1

∗2

∗3

Each Terminal Mounted on a Recommended

Mounted on a 25mm×25mm× 0.8mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

BV^CBO

−

=10µA

=1mA

Collector-emitter breakdown voltage BV^CEO

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

BV^EBO

−

=10µA

CBO

EBO

CE(sat)

−

100

CB=15V

−

VEB=6V

Collector-emitter saturation voltage

DC current gain

−

85 200 mV

=500mA/25mA

=2V/200mA

CE=2V, I =−200mA, f=100MHz

CB=10V, I =0A, f=1MHz

∗

270

−

680

−

CE/IC

Transition frequency

400

MHz

Collector output capacitance

Cob

−

∗ Pulsed

Rev.B

1/2

QSX7

Transistors

zPackaging specifications

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000

QSX7

zElectrical characteristic curves

1000

0.1

I_CC/I_BB=20/1

I /I =20

Pulsed

Ta=25°C

Ta=100°C

CE=2V

Ta=−40°C

Ta=25°C

Ta=100°C

BE(sat)

Ta=25°C

Ta=−40°C

Ta=100°C

0.1

100

Ta=25°C

Ta=−40°C

C/I

=50/1

0.01

0.001

CE(sat)

IC/IB

=20/1

0.01

0.001

IC/IB=10/1

CE=2V

Pulsed

0.001

0.01

0.1

0.001

0.01

0.1

0.01

0.1

COLLECTOR CURRENT : I

(A)

COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : I

(A)

Fig.1 DC current gain

vs. collector current

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage

vs. collector current

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

CE=2V

Ta=25°C

Pulsed

CE=2V

f=100MHz

tstg

100

Ta=100°C

Ta=25°C

0.1

0.01

100

Ta=−40°C

tdon

CE=2V

Ta=25°C

Pulsed

0.001

−0.001

0.5

1.0

1.5

0.01

0.1

−0.01

−0.1

−1

(A)

−10

EMITTER CURRENT : I

BASE TO EMITTER VOLTAGE : V^BE(V)

COLLECTOR CURRENT : IC (A)

Fig.5 Gain bandwidth product

vs. emitter current

Fig.4 Grounded emitter propagation

characteristics

Fig.6 Switching time

100

IE=0A

f=1MHz

Cib

Ta=25°C

Cob

0.1

100

EMITTER TO BASE VOLTAGE : V^EB(V)

COLLECTOR TO BASE VOLTAGE : V^CB(V)

Fig.7 Collector output capacitacitance

vs.collector-base voltage

Emitter input capacitance

vs.emitter-base voltage

Rev.B

2/2

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

型号:	QSX7TR
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.21.00.75
风险等级：	5.73
最大集电极电流 (IC)：	1.5 A
集电极-发射极最大电压：	12 V
配置：	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：	270
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e1
湿度敏感等级：	1
元件数量：	2
端子数量：	6
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.5 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	TIN SILVER COPPER
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	10
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	400 MHz
Base Number Matches：	1

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