QSZ4IC贸易商引脚图技术参数全新原装-中国IC网-芯三七

QSZ4

Transistors

General purpose transistor

(isolated transistor and diode)

QSZ4

A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package.

zExternal dimensions (Unit : mm)

zApplications

DC / DC converter

Motor driver

QSZ4

2.8

1.6

zFeatures

1) Low V^CE(sat)

2) Small package

0.3∼0.6

ROHM : TSMT5

Each lead has same dimensions

zStructure

Silicon epitaxial planar transistor

Abbreviated symbol : Z04

zEquivalent circuit

(5)

(4)

Tr1

Tr2

(1)

(2)

(3)

zPackaging specifications

Type

Package

QSZ4

TSMT5

Z04

Marking

Code

TR

Basic ordering unit(pieces)

3000

1/4

QSZ4

Transistors

zAbsolute maximum ratings (Ta=25°C)

Tr1

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−30

Unit

V

VCBO

VCEO

VEBO

−6

I

C

−2

−4

500

1.25

0.9

A

Collector current

∗1

∗2

∗3

I

CP

mW/Total

W/Total

W/Element

°C

Power dissipation

Pc

Junction temperature

Tj

150

Range of storage temperature

Tstg

−55 to +150

°C

∗1 Single pulse, Pw=1ms.

∗2 Each terminal mounted on a recommended land.

t

∗3 Mounted on a 25×25× 0.8mm ceramic substrate.

Tr 2

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

30

6

Unit

V

VCBO

VCEO

VEBO

I

C

2

4

500

A

Collector current

∗1

∗2

∗3

I

CP

mW/Total

W/Total

W/Element

°C

Power dissipation

Pc

1.25

0.9

150

Junction temperature

Tj

Range of storage temperature

Tstg

−50 to +150

°C

∗1 Single pulse, Pw=1ms.

∗2 Each terminal mounted on a recommended land.

t

∗3 Mounted on a 25×25× 0.8mm ceramic substrate.

zElectrical characteristics (Ta=25°C)

Tr1

Parameter

Symbol

Min.

−30

−6

−

270

−

Typ.

−

Max.

−

Unit

V

Conditions

= −10µA

= −1mA

= −10µA

CB= −30V

EB= −6V

BV^CBO

BV^CEO

BV^EBO

I

C

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

V

−

V

E

I

CBO

EBO

CE(sat)

FE

−100

−370

680

−

nA

mV

−

MHz

pF

V

I

−

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

V

−180

−

280

20

I

C

= −1.5A, I

CE= −2V, I

B

= −75mA

= −200mA^∗

=200mA, f=100MHz^∗

=0A, f=1MHz

h

V

C

f

T

E

Transition frequency

CB= −10V, I

E

Cob

−

Collector output capacitance

∗ Pulsed

Tr 2

Parameter

Symbol

BV^CBO

BV^CEO

BV^EBO

Min.

30

6

Typ.

−

180

−

280

20

Max.

−

Unit

V

Conditions

I

C

=10µA

=1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

V

I

C

−

V

E

=10µA

CB=30V

EB=6V

I

CBO

EBO

CE(sat)

FE

−

270

−

100

370

680

−

nA

mV

−

MHz

pF

V

I

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

V

I

C

=1.5A, I

CE=2V, I

B

=75mA

=200mA^∗

= −200mA, f=100MHz^∗

=0A, f=1MHz

h

V

C

f

T

E

Transition frequency

CB=10V, I

E

Cob

−

Collector output capacitance

∗ Pulsed

2/4

QSZ4

Transistors

zElectrical characteristic curves

Tr1(PNP)

1000

10

Ta=25 C

Pulsed

VCE= −2V

Pulsed

IC/IB=20/1

Pulsed

Ta=100 C

Ta=25 C

1

Ta=−40 C

100

1

IC/IB=50/1

IC/IB=20/1

I

C/IB=10/1

0.1

Ta=−40 C

Ta=25 C

Ta=100 C

0.01

0.001

0.1

0.001

10

0.001

0.01

0.1

1

10

0.01

0.1

1

10

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltage

vs. collector current

Fig.3 Base-emitter saturation voltage

vs. collectir current

Fig.1 DV current gain

vs. collector current

10

1000

10000

V

BE=2V

Ta=25 C

Pulsed

VCE= −2V

f=100MHz

V

CE= −12V

/I =20/1

Pulsed

I

C B

1000

100

Ta=100 C

tstg

Ta=25 C

1

Ta=−40 C

100

tf

tdon

0.1

10

1

tr

0.01

10

0.01

0.1

1

10

0.01

0.1

1

10

0.1

1

10

BASE TO EMITTER CURRENT : VBE (V)

EMITTER CURRENT : IE (A)

COLLECTOR CURRENT : IC(A)

Fig.4 Grounded emitter propagation

characteristics

Fig.5 Gain bandwidth product

vs. emitter curent

Fig.6 Switching time

1000

IC=0A

f=1MHz

Ta=25 C

Cib

100

10

1

Cob

0.001

0.01

0.1

1

10

100

EMITTER TO BASE VOLTAGE : VBE (V)

COLLECTOR TO BASE VOLTAGE : V^CB(V)

Fig.7 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

3/4

QSZ4

Transistors

Tr2(NPN)

1000

10

IC/IB=20/1

Pulsed

VCE=−2V

Pulsed

IC/IB=20/1

Pulsed

Ta=125 C

Ta=25 C

Ta=−25 C

Ta=25 C

Ta=125 C

1

Ta=−25 C

Ta=25 C

Ta=125 C

1

100

0.1

0.001

10

0.001

0.01

0.001

0.01

0.1

1

10

0.01

0.1

1

10

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Fig.10 Base-emitter saturation voltage

vs. collector current

Fig.9 Collector-emitter saturation voltage

base-emitter saturation voltage

vs. collector current

Fig.8 DC current gain

vs. collector current

10

1000

VCE=−2V

Pulsed

Ta=25 C

VCE=−2V

f= 100MHz

IC=0A

f=1MHz

Ta=25 C

Cob

Ta=125 C

Ta=25 C

1

Ta=−25 C

0.1

100

Cib

0.01

0.001

0

10

0.01

10

0.001

0.6

0.8

1.2

1

0.4

1.4

0.2

0.1

1

10

0.01

0.1

1

10

100

EMITTER TO BASE VOLTAGE : VEB (V)

COLLECTOR TO BASE VOLTAGE : V^CB(V)

BASE TO EMITTER CURRENT : VBE (V)

EMITTER CURRENT : IE (A)

Fig.11 Grounded emitter propagation

characteristics

Fig.12 Gain bandwidth product

vs. emitter current

Fig.13 Collector output chapacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

4/4

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

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