QVE00034各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

QVE00034

PACKAGE DIMENSIONS

0.697 (17.70)

+

D

0.236 (6.00)

0.020 (0.50)

C

L

E

+

C

L

0.315 (8.00)

0.039 X 45°

CHAMFER (2X)

C

L

OPTICAL

C.L.

0.059 (1.50)

(2X)

0.394 (10.00)

0.138 (3.51)

0.295 (7.50)

0.079 (2.00)

0.030 (0.76)

0.197 (5.00)

0.543 [13.79]

PINS

0.020 (0.51) (4X)

SQ. (TYP)

C

SCHEMATIC

L

0.333 (8.46)

2

1

3

4

0.100 (2.54)

(2X) (TYP)

1

4

0.093 (2.36)

PIN #1 (ANODE)

PIN #2 (CATHODE)

PIN #3 (COLLECTOR)

PIN #4 (EMITTER)

NOTES:

1. Dimensions for all drawings are in inches (millimeters).

2. Tolerance of .010 (.25) on all non-nominal dimensions

unless otherwise specified.

2

3

DESCRIPTION

The QVE00034 is a slotted optical switch designed for multipurpose non-contact sensing. It consists of a GaAs LED and a silicon

photo-transistor packaged into an injection molded housing and facing each other across a 0.315" (8.0 mm) gap. The housing is

featuring locating knobs for accurate mounting.

FEATURES

• No contact switching

• 8mm wide slot

• 0.5 mm aperture width

• Opaque black plastic housing

• Locating knobs on housing base for accurate mounting

• Transistor Output

Page 1 of 5

4/14/03

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

QVE00034

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise speciﬁed)

A

Parameter

Symbol

Rating

Units

T

Operating Temperature

Storage Temperature

-55 to +100

°C

OPR

T

STG

(2,3,4)

(2,3)

T

240 for 5 sec

260 for 10 sec

Soldering Temperature (Iron)

SOL-I

T

Soldering Temperature (Flow)

EMITTER

SOL-F

I

Continuous Forward Current

50

6

mA

V

F

V

Reverse Voltage

R

(1)

P

100

mW

Power Dissipation

D

SENSOR

V

Collector-Emitter Voltage

30

4.5

20

V

CEO

V

Emitter-Collector Voltage

Collector Current

ECO

I

mA

mW

C

(1)

P

150

Power Dissipation

D

NOTES

1. Derate power dissipation linearly 1.67 mW/°C above 25°C.

2. RMA ﬂux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron tip 1/16" (1.6mm) from housing.

ELECTRICAL/OPTICAL CHARACTERISTICS (T = 25°C unless otherwise speciﬁed)

A

PARAMETER

TEST CONDITIONS

SYMBOL

MIN

TYP

MAX

UNITS

EMITTER

I = 20 mA

V

Forward Voltage

—

1.2

—

1.5

10

—

V

F

V = 4 V

I

Reverse Current

µA

nm

R

I = 20 mA

λ

Peak Emission Wavelength

940

F

PE

SENSOR

V

= 10 V, I = 0 mA

—

200

3

nA

µA

CE

F

I

Dark Current

D

= 2.5 V, I = 0 mA, T = -40°C to +85°C

CE

F

A

COUPLED

I = 20 mA, V = 10 V

I

Collector Current

0.5

—

14

mA

V

F

CE

C(ON)

I = 20 mA, I = 0.1 mA

Collector Emitter Saturation

Voltage

F

C

V

0.4

CE (SAT)

T = -40°C to +85°C

A

t

Rise Time

Fall Time

—

4

—

V

= 5 V, R = 100 Ω

L

r

CC

µs

I = 5 µA

t

C

f

Page 2 of 5

4/14/03

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

QVE00034

TYPICAL PERFORMANCE CURVES

Fig. 1 Collector Current vs. Shield Distance

Fig. 2 Collector Current vs. Shield Distance

1.0

T_A=25°C

I_F=20mA

Normalized to

value with shield

removed

Normalized to

value with shield

removed

V

_CE=5V

V

_CE=5V

0.8

0.6

0.4

0.2

0.0

0.8

0.6

0.4

0.2

0.0

Black Shield

+

E

D

+

d2

0

d1

0

1

2

3

4

5

6

0

2

4

6

8

d2-Shield Distance(mm)

d1-Shield Distance(mm)

Fig. 3 Collector-Emitter Voltage vs. Collector Current

Fig. 4 Collector-Emitter Voltage vs.Temperature

5

1.9

T

A

= 25˚C

I

= 20 mA, I = 0.1 mA

C

I

= 40 mA

= 30 mA

F

4.5

4

1.4

1.2

1

I

F

= 10 mA, I = 0.05 mA

C

I

3.5

3

2.5

2

I

= 20 mA

F

0.8

0.6

0.4

0.2

0

I

= 30 mA, I = 0.15 mA

C

F

I

F

= 10 mA

Normalized to

= 20 mA, I = 0.1 mA, T = 25˚C

1.5

I

F

C

A

1

0.5

0

1

2

3

4

5

6

7

8

9

10

11

12

-50

-25

0

25

50

75

100

V

(V)

TEMP(C)

CE

Page 3 of 5

4/14/03

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

QVE00034

Fig. 5 Collector Current vs.Temperature

Fig. 6 Collector Current vs. Forward Current

3

5

4.5

4

I

= 100 mA

F

Normalized to

= 20 mA, V

I

= 5 V, T = 25˚C

A

2.5

F

CE

I

= 60 mA

= 30 mA

3.5

3

F

2

2.5

2

1.5

T

V

= 25˚C

= 10 V

CE

A

I

F

Normalized to

= 20 mA

1

0.5

0

1.5

1

I

F

I

= 20 mA

F

I

= 10 mA

F

0.5

0

I

F

= 5 mA

0

5

10

15

20

25

30

35

40

45

50

55

-55

-40

-20

0

20

40

60

80

100

Temp(C)

I

(mA)

F

Fig. 7 Rise Time vs. Load Resistance

Fig. 8 Fall Time vs. Load Resistance

1.1

4.5

4.25

4

3.75

3.5

3.25

3

2.75

2.5

2.25

2

1.75

1.5

1.25

1

1.05

TA = 25˚C

1

0.95

0.9

PW = 300 µs

PRR = 100 µs

VCC = 5 V

T(on)

Normalized

to RL = 2k Ω

0.85

0.8

T

= 25˚C

A

PW = 300 µs

PRR = 100 µs

= 5 V

T(off)

0.75

0.7

V

CC

Normalized

to RL = 2k Ω

0.65

0.6

0.75

0.5

0.25

0

0.55

0.5

1

2

3

4

5

6

7

8

9

10

1

2

3

4

5

6

7

8

9

10

RL(kΩ)

R (kΩ)

L

Fig. 9 Forward Voltage vs. Forward Current

55

50

45

40

35

30

25

20

15

10

5

T

= 30˚C

A

T

= 25˚C

= 70˚C

A

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

V (V)

F

Page 4 of 5

4/14/03

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

QVE00034

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORATION. As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in a significant injury of the user.

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

Page 5 of 5

4/14/03

型号:	QVE00034
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
包装说明：	PLASTIC PACKAGE-4
Reach Compliance Code：	compliant
风险等级：	5.84
Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SINGLE
最大暗电源：	200 nA
最大正向电流：	0.05 A
间隙大小：	8 mm
安装特点：	THROUGH HOLE MOUNT
功能数量：	1
最大通态电流：	0.014 A
最大通态电压：	30 V
标称通态集电极电流：	0.5 mA
最高工作温度：	100 °C
最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT SLOTTED SWITCH
输出电路类型：	Transistor
标称槽宽：	8 mm
表面贴装：	NO
Base Number Matches：	1

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