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产品型号RB751S40T1G的概述

芯片RB751S40T1G的概述 RB751S40T1G是一款多用途、可调节的N沟道MOSFET（场效应晶体管），专为高效能开关应用而设计。其具有良好的热稳定性和电流承载能力，使其在各种电子设备中得到广泛应用。高效的开关特性使得RB751S40T1G成为电源管理、电机驱动、LED驱动以及其他模拟电路的理想选择。该芯片在半导体市场上因其卓越的性能和灵活的应用而备受瞩目。芯片RB751S40T1G的详细参数 RB751S40T1G的参数可以从多个方面来分析，包括电气特性、热特性和机械特性。以下是该芯片的一些主要技术参数： 1. 最大耗散功率：RB751S40T1G的最大耗散功率通常可达到1.5W，具体值取决于散热片的使用情况和工作环境。 2. 栅极-源极阈值电压（\(V_{GS(th)}\)）：一般在2V到4V之间，确保有效的开关控制。 3. 漏极-源极电压（\(V_{DS}\)）：该值...

产品型号RB751S40T1G的Datasheet PDF文件预览

RB751S40T1

Schottky Barrier Diode

These Schottky barrier diodes are designed for high−speed

switching applications, circuit protection, and voltage clamping.

Extremely low forward voltage reduces conduction loss. Miniature

surface mount package is excellent for hand−held and portable

applications where space is limited.

http://onsemi.com

Features

• Extremely Fast Switching Speed

40 V SCHOTTKY

BARRIER DIODE

• Extremely Low Forward Voltage − 0.28 V (Typ) @ I = 1.0 mAdc

• Low Reverse Current

• Lead−Free Plating

• Pb−Free Package is Available

CATHODE

ANODE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

SOD−523

CASE 502

PLASTIC

Peak Reverse Voltage

Reverse Voltage

Forward Continuous Current (DC)

Peak Forward Surge Current

MARKING DIAGRAM

500

FSM

ESD Rating: Class 1C per Human Body Model

Class A per Machine Model

5E MG

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

5E = Specific Device Code

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

200

ORDERING INFORMATION

(Note 1) T = 25°C

†

Device

Package

Shipping

Derate above 25°C

1.57

635

mW/°C

°C/W

RB751S40T1

SOD−523

4000/Tape & Reel

Thermal Resistance,

Junction−to−Ambient

RB751S40T1G SOD−523

(Pb−Free)

4000/Tape & Reel

Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. FR−5 Minimum Pad.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 3

RB751S40T1/D

RB751S40T1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

−

(BR)R

(I = 10 mA)

Total Capacitance

(V = 1.0 V, f = 1.0 MHz)

−

2.0

300

0.28

2.5

500

0.37

Reverse Leakage

(V = 30 V)

nAdc

Vdc

Forward Voltage

(I = 1.0 mAdc)

1000

100

= 150°C

125°C

1.0

85°C

1.0

0.1

25°C

150 °C

0.01

0.001

5 °C

85°C

25°C

−ꢀ40°C

−ꢀ55°C

0.1

0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5

V , REVERSE VOLTAGE (VOLTS)

V , FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

Figure 2. Reverse Current versus Reverse

Voltage

3.0

2.5

2.0

1.5

1.0

0.5

2.0

4.0

6.0

8.0

V , REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance

http://onsemi.com

RB751S40T1

PACKAGE DIMENSIONS

SOD−523

CASE 502−01

ISSUE B

−X−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

1982.

−Y−

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

MILLIMETERS

INCHES

NOM

0.047

0.032

0.024

0.012

D 2 PL

DIM

MIN

1.10

0.70

0.50

0.25

0.07

0.15

1.50

NOM

1.20

0.80

0.60

0.30

0.14

0.20

1.60

MAX

MIN

MAX

0.051

0.035

0.028

0.014

1.30

0.90

0.70

0.35

0.043

0.028

0.020

0.010

0.08 (0.003)

0.20 0.0028 0.0055 0.0079

0.25

1.70

0.006

0.059

0.008

0.063

0.010

0.067

−T−

SEATING

PLANE

SOLDERING FOOTPRINT*

1.40

0.0547

0.40

0.0157

0.40

0.0157

inches

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

RB751S40T1

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

RB751S40T1/D

http://onsemi.com

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RB751S40T1G产品参数

型号:	RB751S40T1G
是否无铅：	不含铅
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
包装说明：	LEAD FREE, MINIATURE, PLASTIC, CASE 502-01, 2 PIN
针数：	2
制造商包装代码：	CASE 502-01
Reach Compliance Code：	unknown
风险等级：	5.65
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
JESD-30 代码：	R-PDSO-F2
JESD-609代码：	e3
湿度敏感等级：	NOT SPECIFIED
元件数量：	1
端子数量：	2
最大输出电流：	0.03 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
最大功率耗散：	0.2 W
认证状态：	COMMERCIAL
最大重复峰值反向电压：	30 V
表面贴装：	YES
技术：	SCHOTTKY
端子面层：	MATTE TIN
端子形式：	FLAT
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

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产品型号RB751S40T1G的概述

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