RFD8P06LE, RFD8P06LESM, RFP8P06LE
o
Absolute Maximum Ratings
T
= 25 C Unless Otherwise Specified
C
RFD8P06LE, RFD8P06LESM,
RFP8P06LE
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
-60
-60
V
V
DS
Drain to Gate Voltage (R
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
DGR
Continuous Drain Current
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
-8
-6.3
A
A
C
C
D
D
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
See Figure 5
±10
DM
V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
48
0.32
W
W/ C
D
o
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
See Figure 6
-55 to 175
300
AS
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
C
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(0.063in (1.6mm) from case for 10s)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 150 C.
J
o
Electrical Specifications
T
= 25 C Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
= 0V (Figure 11)
MIN
TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
I
= 250µA, V
-60
-1
-
-
-
-
-2
V
D
GS
V
V
= V , I = 250µA (Figure 12)
V
GS(TH)
GS
DS
DS D
o
Zero Gate Voltage Drain Current
I
V
=- 60V, V
= 0V
GS
T = 25 C
J
-
-1
µA
µA
µA
Ω
DSS
o
T = 150 C
-
-
-50
±10
0.300
0.330
90
-
J
Gate to Source Leakage Current
On Resistance (Note 1)
I
V
= ±10V
-
-
GSS
GS
r
I
I
= 8A, V
= -5V (Figure 9, 10)
= -4.5V (Figure 9, 10)
-
-
DS(ON)
D
GS
GS
= 8A, V
-
-
Ω
D
Turn-On Time
t
V
= -30V, I
8A, R
= 9.1Ω, R = 3.75Ω
-
-
ns
ON
DD
(Figure 13)
D
GS
L
Turn-On Delay Time
Rise Time
t
-
10
50
30
20
-
ns
d(ON)
t
-
-
ns
r
Turn-Off Delay Time
Fall Time
t
-
-
ns
d(OFF)
t
-
-
ns
f
Turn-Off Time
t
-
75
30
18
1.5
-
ns
OFF
Total Gate Charge
Gate Charge at -5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
V
V
V
V
= 0 to -10V
= 0 to -5V
= 0 to -1V
V
R
= -48V, I
D
= 6Ω
8A,
-
25
15
1.2
675
175
50
-
nC
nC
nC
pF
pF
pF
C/W
C/W
C/W
g(TOT)
GS
GS
GS
DS
DD
L
Q
-
g(-5)
I
= -0.2mA
g(REF)
Q
-
(Figure 14)
= 0V, f = 1MHz
GS
g(TH)
C
=- 25V, V
-
ISS
OSS
RSS
(Figure 15)
C
C
-
-
-
-
o
o
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
-
3.125
100
80
θJC
θJA
R
TO-251AA, TO-252AA
TO-220AB
-
-
o
Source to Drain Diode Specifications T = 25 C Unless Otherwise Specified
C
PARAMETER
Source to Drain Diode Voltage (Note 1)
Reverse Recovery Time
NOTE:
SYMBOL
TEST CONDITIONS
=- 8A, V = 0V
MIN
TYP MAX UNITS
o
V
T = 25 C, I
J
-
-
-
-
-1.5
125
V
SD
SD
SD
GS
=- 8A, dI /dt = 100A/µs
o
t
T = 25 C, I
ns
rr
J
SD
2. Pulse Test: Pulse width ≤300µs, Duty Cycle ≤2%.
7-12