RFD8P06LE应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

当前位置：IC37首页_>R字母起始型号索引_>R字母起始型号索引第281页更新时间：2024-10-25 16:37:42

产品型号RFD8P06LE的概述

芯片RFD8P06LE的概述 RFD8P06LE是一款用于电源管理和开关控制的功率MOSFET（金属氧化物半导体场效应晶体管）。这款设备在电子设计和电源管理领域应用广泛，因其出色的电性能和可靠性而受到青睐。RFD8P06LE具备高效的电源导通能力，适合用于各种低压驱动应用，如电机控制和开关电源。该器件的通过封装以及高开关速度等优点，使得其在开关频率较高的应用中表现优异。同时，RFD8P06LE的适用温度范围广，确保其在不同环境下稳定运行。芯片RFD8P06LE的详细参数 RFD8P06LE的主要参数涵盖了其电气特性，封装信息等，具体包括： - 最大漏极源极电压（V_DS）：60V - 最大漏极电流（I_D）：8A（在适当的散热条件下） - 最大栅极源极电压（V_GS）：±20V - 静态门阈值电压（V_GS(th)）：1.0V至2.5V - R_DS(on)：约0.25Ω（在V_G...

产品型号RFD8P06LE的Datasheet PDF文件预览

RFD8P06LE, RFD8P06LESM, RFP8P06LE

Data Sheet

July 1999

File Number 4273.1

8A, 60V, 0.300 Ohm, ESD Rated, Logic

Level, P-Channel Power MOSFET

Features

• 8A, 60V

These products are P-Channel power MOSFETs

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI circuits,

gives optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

• r

= 0.300Ω

DS(ON)

• 2kV ESD Protected

• Temperature Compensating PSPICE Model

• PSPICE Thermal Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Formerly developmental type TA49203.

• 175 C Operating Temperature

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

F8P6LE

RFD8P06LE

TO-251AA

RFD8P06LESM

RFP8P06LE

TO-252AA

TO-220AB

F8P6LE

FP8P06LE

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-252AA variant in the tape and reel, i.e.,

RFD8P06LESM9A.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

7-11

RFD8P06LE, RFD8P06LESM, RFP8P06LE

Absolute Maximum Ratings

= 25 C Unless Otherwise Speciﬁed

RFD8P06LE, RFD8P06LESM,

RFP8P06LE

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

-60

Drain to Gate Voltage (R

= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current

= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

-8

-6.3

= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

See Figure 5

±10

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.32

W/ C

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

See Figure 6

-55 to 175

300

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T

STG

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

(0.063in (1.6mm) from case for 10s)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. T = 25 C to 150 C.

Electrical Speciﬁcations

= 25 C Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

= 0V (Figure 11)

MIN

TYP MAX UNITS

Drain to Source Breakdown Voltage

Gate Threshold Voltage

DSS

= 250µA, V

-60

-1

-2

= V , I = 250µA (Figure 12)

GS(TH)

DS D

Zero Gate Voltage Drain Current

=- 60V, V

= 0V

T = 25 C

-1

µA

Ω

DSS

T = 150 C

-50

±10

0.300

0.330

Gate to Source Leakage Current

On Resistance (Note 1)

= ±10V

GSS

= 8A, V

= -5V (Figure 9, 10)

= -4.5V (Figure 9, 10)

DS(ON)

= 8A, V

Ω

Turn-On Time

= -30V, I

8A, R

= 9.1Ω, R = 3.75Ω

(Figure 13)

Turn-On Delay Time

Rise Time

d(ON)

Turn-Off Delay Time

Fall Time

d(OFF)

Turn-Off Time

1.5

OFF

Total Gate Charge

Gate Charge at -5V

Threshold Gate Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

= 0 to -10V

= 0 to -5V

= 0 to -1V

= -48V, I

= 6Ω

8A,

1.2

675

175

C/W

g(TOT)

g(-5)

= -0.2mA

g(REF)

(Figure 14)

= 0V, f = 1MHz

g(TH)

=- 25V, V

ISS

OSS

RSS

(Figure 15)

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

3.125

100

θJC

θJA

TO-251AA, TO-252AA

TO-220AB

Source to Drain Diode Speciﬁcations T = 25 C Unless Otherwise Speciﬁed

PARAMETER

Source to Drain Diode Voltage (Note 1)

Reverse Recovery Time

NOTE:

SYMBOL

TEST CONDITIONS

=- 8A, V = 0V

MIN

TYP MAX UNITS

T = 25 C, I

-1.5

125

=- 8A, dI /dt = 100A/µs

T = 25 C, I

2. Pulse Test: Pulse width ≤300µs, Duty Cycle ≤2%.

7-12

RFD8P06LE, RFD8P06LESM, RFP8P06LE

Typical Performance Curves Unless Otherwise Speciﬁed

1.2

1.0

0.8

0.6

0.4

-10

-8

-6

-4

-2

0.2

150

125

175

100

125

150

175

, CASE TEMPERATURE ( C)

T , CASE TEMPERATURE ( C)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

2.0

1.0

0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

NOTES:DUTY FACTOR: D = t /t

PEAK T = P

x Z

x R + T

θJC

θJC C

0.01

-5

-4

-3

-2

-1

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-100

-10

-1

-10

= 25 C, T = MAX RATED

= 25 C

FOR TEMPERATURES ABOVE 25 C

DERATE PEAK CURRENT

100µs

CAPABILITY AS FOLLOWS:

175 – T

I = I

-----------------------

150

= -10V

= -5V

1ms

10ms

100ms

-10

-5

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

= -60V

DS(MAX)

DS(ON)

-0.1

-5

-4

-3

-2

-1

-100

-1

-10

, DRAIN TO SOURCE VOLTAGE (V)

t, PULSE WIDTH (ms)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. PEAK CURRENT CAPABILITY

7-13

RFD8P06LE, RFD8P06LESM, RFP8P06LE

Typical Performance Curves Unless Otherwise Speciﬁed

-30

-25

-20

-15

PULSE DURATION = 250µs

DUTY CYCLE = 0.5% MAX

STARTING T = 25 C

= 25 C

= -10V

= -5V

-10

STARTING T = 150 C

= -4.5V

= -4V

-10

-5

If R = 0

= (L) (I ) / (1.3RATED BV

- V

)

DSS

If R ≠ 0

= -3V

= (L/R) ln [(I *R) / (1.3 RATED BV

- V ) + 1]

DSS

-1

0.01

0.1

-1.5

-3.0

-4.5

-6.0

-7.5

, TIME IN AVALANCHE (ms)

, DRAIN TO SOURCE VOLTAGE (V)

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

FIGURE 7. SATURATION CHARACTERISTICS

600

500

-30

PULSE DURATION = 80µs

-55 C

DUTY CYCLE = 0.5% MAX

= -15V

25 C

= -8A

-25

-20

-15

-10

-5

= -4A

= -2A

= -1A

175 C

400

300

200

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-2.0

-2.5

-3.0

-3.5

-4.0

-4.5

-5.0

-1.5

-3.0

-4.5

-6.0

-7.5

, GATE TO SOURCE VOLTAGE (V)

V , GATE TO SOURCE VOLTAGE (V)

FIGURE 8. TRANSFER CHARACTERISTICS

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

2.0

2.25

2.00

1.75

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

= -250µA

= -5V, I = -8A

1.15

1.1

1.50

1.25

1.00

0.75

1.05

1.0

0.95

0.9

0.50

160

200

-80

160

200

120

-80

-40

120

T , JUNCTION TEMPERATURE ( C)

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

RESISTANCE vs JUNCTION TEMPERATURE

7-14

RFD8P06LE, RFD8P06LESM, RFP8P06LE

Typical Performance Curves Unless Otherwise Speciﬁed

1.4

1.2

1.0

125

100

= V , I = -250µA

= -30V, I = -8A, R = 3.75Ω

DD D L

d(OFF)

0.8

0.6

d(ON)

-80

-40

120

160

200

, GATE TO SOURCE RESISTANCE (Ω)

T , JUNCTION TEMPERATURE ( C)

FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

FIGURE 13. SWITCHING TIME AS A FUNCTION OF GATE

RESISTANCE

-5.00

-3.75

-2.50

-1.25

0.00

-60

-45

-30

-15

1000

= 0V, f = 0.1MHz

= C + C

=BV

ISS

GS GD

= BV

DSS

= C

800

RSS

OSS

≈ C

+ C

ISS

= 7.5Ω

600

400

= -0.20mA

G(REF)

0.75 BV

0.50 BV

0.25 BV

0.75 BV

0.50 BV

0.25 BV

DSS

OSS

= -5V

200

RSS

G(REF)

G(ACT)

G(REF)

G(ACT)

-10

-20

-30

-40

-50

-60

t, TIME ( µs)

, DRAIN TO SOURCE VOLTAGE (V)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuits and Waveforms

VARY t TO OBTAIN

REQUIRED PEAK I

DUT

0.01Ω

-V

DSS

FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 17. UNCLAMPED ENERGY WAVEFORMS

7-15

RFD8P06LE, RFD8P06LESM, RFP8P06LE

Test Circuits and Waveforms (Continued)

OFF

d(OFF)

d(ON)

10%

90%

10%

50%

DUT

50%

90%

-V

PULSE WIDTH

FIGURE 18. SWITCHING TIME TEST CIRCUIT

FIGURE 19. RESISTIVE SWITCHING WAVEFORMS

g(TH)

= -1V

-V

= -5V

g(-5)

= -10V

DUT

-I

g(TOT)

G(REF)

g(REF)

FIGURE 20. GATE CHARGE TEST CIRCUIT

FIGURE 21. GATE CHARGE WAVEFORMS

7-16

RFD8P06LE, RFD8P06LESM, RFP8P06LE

PSpice Electrical Model

.SUBCKT RFD8P06LE 2 1 3

REV 7/29/96

LDRAIN

ESG

DRAIN

CA 12 8 1.50e-9

CB 15 14 1.50e-9

CIN 6 8 6.30e-10

RLDRAIN

RSLC1

RSLC2

EBREAK

DBODY 5 7 DBDMOD

DBREAK 7 11 DBKMOD

DESD1 91 9 DESD1MOD

DESD2 91 7 DESD2MOD

DPLCAP 10 6 DPLCAPMOD

ESLC

DPLCAP

DBODY

RDRAIN

EBREAK 5 11 17 18 -67.9

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 5 10 8 6 1

EVTHRES 21 6 19 8 1

EVTEMP 6 20 18 22 1

EVTHRES

MWEAK

LGATE

EVTEMP

RGATE

GATE

MMED

DBREAK

MSTRO

RLGATE

LSOURCE

DESD1

CIN

IT 8 17 1

SOURCE

DESD2

LDRAIN 2 5 1e-10

LGATE 1 9 2.92e-9

LSOURCE 3 7 2.92e-9

RSOURCE

RLSOURCE

MSTRONG 16 6 8 8 MstrongMOD

MMED 16 6 8 8 MmedMOD

MWEAK 16 21 8 8 MweakMOD

S1A

S1B

S2A

RBREAK

RBREAK 17 18 RBKMOD 1

RDRAIN 50 16 RDSMOD 95e-3

RGATE 9 20 2.89

RIN 6 8 1e9

RSCL1 5 51 RSCLMOD 1e-6

RSCL2 5 50 1e3

RSOURCE 8 7 RSourceMOD 97e-3

RVTHRES 22 8 RVTHRESMOD 1

RVTEMP 18 19 RVTEMPMOD 1

RVTEMP

S2B

VBAT

EGS

EDS

RVTHRES

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

VBAT 22 19 DC 1

ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/26,7))}

.MODEL DBDMOD D (IS=2.5e-12 RS=4e-2 IKF=0.01 N=0.97 TIKF=0.012 TRS1=0.8e-4 TRS2=-5e-6 CJO=5.25e-10 VJ=0.75 M=0.41 TT=7.50e-8)

.MODEL DBKMOD D (IKF=5 N=0.75 RS=0.245 TRS1=1e-3 TRS2=1.6e-4)

.MODEL DESD1MOD D (BV=16.4 TBV1=-1.25e-3 TBV2=5.79e-7 RS=36 NBV=50 IBV=7e-6)

.MODEL DESD2MOD D (BV=16.2 TBV1=-8.3e-4 TBV2=8.9e-7 NBV=50 IBV=7e-6)

.MODEL DPLCAPMOD D (CJO=4.25e-10 IS=1e-30 N=10 VJ=0.499 M=0.561)

.MODEL MSTRONGMOD PMOS (VTO=-1.91 KP=11.55 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL MMEDMOD PMOS (VTO=-1.51 KP=0.95 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL MWEAKMOD PMOS (VTO=-1.18 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL RBKMOD RES (TC1=1.045e-3 TC2=-3.5e-7)

.MODEL RDSMOD RES (TC1=0.92e-2 TC2=1.55e-5)

.MODEL RSOURCEMOD RES (TC1=2e-3 TC2=0.5e-6)

.MODEL RSCLMOD RES (TC1=2e-3 TC2=0)

.MODEL RVTHRESMOD RES (TC1=-2.5e-3 TC2=0)

.MODEL RVTEMPMOD RES (TC1=-1.55e-3 TC2=7.5e-6)

.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=5.25 VOFF=1.75)

.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.75 VOFF=5.25)

.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.5 VOFF=-0.5)

.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=0.5)

.ENDS

NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature

Options; authored by William J. Hepp and C. Frank Wheatley.

7-17

RFD8P06LE, RFD8P06LESM, RFP8P06LE

PSpice Thermal Model

JUNCTION

REV 7/29/96

RFP8P06LE

CTHERM1 7 6 1.3e-4

CTHERM2 6 5 4.5e-4

CTHERM3 5 4 1e-3

CTHERM4 4 3 2e-3

CTHERM5 3 2 1.5e-2

CTHERM6 2 1 0.55

RTHERM1

RTHERM2

RTHERM3

RTHERM4

RTHERM5

RTHERM6

CTHERM1

CTHERM2

CTHERM3

CTHERM4

CTHERM5

CTHERM6

RTHERM1 7 6 3.0e-2

RTHERM2 6 5 5.0e-2

RTHERM3 5 4 0.1

RTHERM4 4 3 1.15

RTHERM5 3 2 1.20

RTHERM6 2 1 0.55

RFD8P06LE, RFD8P06LESM

CTHERM1 7 6 1.3e-4

CTHERM2 6 5 4.5e-4

CTHERM3 5 4 1e-3

CTHERM4 4 3 2e-3

CTHERM5 3 2 1.5e-2

CTHERM6 2 1 0.12

RTHERM1 7 6 3.0e-2

RTHERM2 6 5 5.0e-2

RTHERM3 5 4 0.1

RTHERM4 4 3 1.15

RTHERM5 3 2 1.20

RTHERM6 2 1 0.55

CASE

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Ofﬁce Headquarters

NORTH AMERICA

EUROPE

ASIA

Intersil Corporation

Intersil SA

Mercure Center

100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111

FAX: (32) 2.724.22.05

Intersil (Taiwan) Ltd.

7F-6, No. 101 Fu Hsing North Road

Taipei, Taiwan

Republic of China

TEL: (886) 2 2716 9310

FAX: (886) 2 2715 3029

P. O. Box 883, Mail Stop 53-204

Melbourne, FL 32902

TEL: (407) 724-7000

FAX: (407) 724-7240

7-18

RFD8P06LE相关文章

配单直通车

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

柒号芯城电子商务（深圳）有限公司服务专线: 0755-83209937 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

深圳市中利达电子科技有限公司服务专线: 0755-83200645/13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

RFD8P06LE产品参数

型号:	RFD8P06LE
是否无铅：	含铅
是否Rohs认证：	不符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
Reach Compliance Code：	unknown
风险等级：	5.31
Is Samacsys：	N
其他特性：	MEGAFET, LOGIC LEVEL COMPATIBLE
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	8 A
最大漏源导通电阻：	0.33 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-251AA
JESD-30 代码：	R-PSIP-T3
JESD-609代码：	e0
湿度敏感等级：	NOT SPECIFIED
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL
认证状态：	COMMERCIAL
表面贴装：	NO
端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号RFD8P06LE的概述

产品型号RFD8P06LE的Datasheet PDF文件预览

RFD8P06LE相关产品

RFD8P06LE相关文章

IC37:专业IC行业平台