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    产品型号RURP1560-F085P的Datasheet PDF文件预览

    ON Semiconductor  
    Is Now  
    To learn more about onsemi™, please visit our website at  
    www.onsemi.com  
    onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or  
    subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi  
    product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without  
    notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,  
    or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
    liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,  
    regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/  
    or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  
    by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized  
    for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for  
    implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,  
    subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
    associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative  
    Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.  
    RURP1560-F085  
    15A, 600V Ultrafast Rectifier  
    Features  
    15A, 600V Ultrafast Rectifier  
    •
    •
    •
    •
    High Speed Switching ( trr=52ns(Typ.) @ IF=15A )  
    Low Forward Voltage( VF=1.5V(Max.) @ IF=15A )  
    Avalanche Energy Rated  
    The RURP1560-F085 is an ultrafast diode with soft  
    recovery characteristics(trr < 70ns). It has a low forward  
    voltage drop and is of planar, silicon nitride assivated,  
    ion-implanted, epitaxial construction.  
    This device is intended for use as an energy steering /  
    clamping diode and rectifier in a variety of switching  
    power supplies and other power switching applications.  
    Its low stored charge and ultrafast recovery with soft  
    recovery characteristics minimizes ringing and electrical  
    noise in many power switching circuits, thus reducing  
    power loss in the switching transistor.  
    AEC-Q101 Qualified  
    Applications  
    •
    •
    •
    •
    Automotive DCDC converter  
    Automotive On Board Charger  
    Switching Power Supply  
    Power Switching Circuits  
    Pin Assignments  
    TO-220-2L  
    1
    2
    1. Cathode  
    2. Anode  
    Cathode  
    Anode  
    Absolute Maximum Ratings  
    T = 25°C unless otherwise noted  
    C
    Symbol  
    Parameter  
    Ratings  
    Units  
    VRRM  
    VRWM  
    VR  
    Peak Repetitive Reverse Voltage  
    600  
    600  
    V
    V
    Working Peak Reverse Voltage  
    DC Blocking Voltage  
    600  
    V
    IF(AV)  
    IFSM  
    EAVL  
    Average Rectified Forward Current  
    Non-repetitive Peak Surge Current  
    Avalanche Energy (1A, 40mH)  
    Operating Junction and Storage Temperature  
    @ TC = 25°C  
    15  
    A
    200  
    A
    20  
    mJ  
    °C  
    T
    J, TSTG  
    - 55 to +175  
    Thermal Characteristics  
    T = 25°C unless otherwise noted  
    C
    Symbol  
    Parameter  
    Max  
    1
    Units  
    °C/W  
    °C/W  
    RθJC  
    RθJA  
    Maximum Thermal Resistance, Junction to Case  
    Maximum Thermal Resistance, Junction to Ambient  
    85  
    Package Marking and Ordering Information  
    Device Marking  
    Device  
    Package  
    Reel Size  
    Tape Width  
    Quantity  
    RURP1560  
    RURP1560-F085  
    TO-220-2L  
    -
    -
    50  
    Publication Order Number:  
    RURP1560-F085/D  
    ©2013 Semiconductor Components Industries, LLC.  
    August-2017, Rev. 3  
    Electrical Characteristics  
    T = 25°C unless otherwise noted  
    C
    Symbol  
    Parameter  
    Conditions  
    Min. Typ. Max Units  
    IR  
    Instantaneous Reverse Current VR = 600V  
    TC = 25 °C  
    -
    -
    -
    -
    100  
    1
    uA  
    TC = 175 °C  
    mA  
    1
    VFM  
    Instantaneous Forward Voltage IF = 15A  
    TC = 25 °C  
    TC = 175 °C  
    -
    -
    1.24  
    1.0  
    1.5  
    1.2  
    V
    V
    2
    trr  
    Reverse Recovery Time  
    Reverse Recovery Time  
    IF =1A, di/dt = 100A/μs,  
    VCC= 390V  
    T
    C = 25 °C  
    -
    32  
    55  
    ns  
    IF =15A, di/dt = 100A/μs,  
    VCC= 390V  
    -
    -
    52  
    220  
    70  
    -
    ns  
    ns  
    T
    C = 25 °C  
    TC = 175 °C  
    C = 25 °C  
    ta  
    tb  
    IF =15A, di/dt = 100A/μs,  
    VCC= 390V  
    T
    -
    -
    -
    28  
    24  
    73  
    -
    -
    -
    ns  
    ns  
    nC  
    Qrr  
    Reverse Recovery Charge  
    Avalanche Energy  
    EAVL  
    IAV=1.0A,L = 40mH  
    20  
    -
    -
    mJ  
    Notes:  
    1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%  
    2. Guaranteed by design  
    Test Circuit and Waveforms  
    www.onsemi.com  
    2
    Typical Performance Characteristics  
    Figure 2. Typical Reverse Current vs.  
    Reverse Voltage  
    Figure 1. Typical Forward Voltage Drop  
    vs. Forward Current  
    1000  
    400  
    TC = 175oC  
    100  
    100  
    10  
    TC = 175oC  
    TC = 125oC  
    TC = 125oC  
    1
    10  
    0.1  
    TC = 25oC  
    0.01  
    1
    TC = 25oC  
    1E-3  
    1E-4  
    0.1  
    0.0  
    0
    100  
    200  
    300  
    400  
    500  
    600  
    0.5  
    1.0  
    1.5  
    2.0  
    2.5  
    Forward Voltage, VF [V]  
    Reverse Voltage, VR [V]  
    Figure 3.Typical Junction Capacitance  
    Figure 4. Typical Reverse Recovery Time  
    vs. di/dt  
    250  
    300  
    Typical Capacitance  
    at 10V = 63pF  
    IF = 15A  
    200  
    150  
    100  
    50  
    240  
    TC = 175oC  
    180  
    120  
    TC = 125oC  
    60  
    TC = 25oC  
    0
    0.1  
    0
    100  
    1
    10  
    100  
    200  
    300  
    400  
    500  
    Reverse Voltage, VR [V]  
    di/dt [A/μs]  
    Figure 6. Forward Current Derating Curve  
    Figure 5. Typical Reverse Recovery  
    Current vs. di/dt  
    25  
    80  
    70  
    60  
    50  
    40  
    30  
    20  
    10  
    0
    IF = 15A  
    TC = 175oC  
    20  
    TC = 125oC  
    15  
    10  
    5
    TC = 25oC  
    0
    100  
    25  
    50  
    75  
    100  
    125o 150  
    175  
    200  
    300  
    di/dt [A/μs]  
    400  
    500  
    Case temperature, TC [ C]  
    www.onsemi.com  
    3
    Typical Performance Characteristics (Continued)  
    Figure 7. Reverse Recovery Charge  
    1600  
    1400  
    1200  
    1000  
    800  
    600  
    400  
    200  
    0
    IF = 15A  
    TC = 175oC  
    TC = 125oC  
    TC = 25oC  
    100  
    200  
    300  
    di/dt [A/μs]  
    400  
    500  
    Figure 8. Transient Thermal Response Curve  
    2
    1
    D=0.5  
    0.2  
    0.1  
    0.05  
    0.02  
    0.1  
    0.01  
    PDM  
    t1  
    t2  
    0.01  
    single pulse  
    * Notes :  
    o
    1. Z  
    (t) = 1 C/W Typ.  
    thJC  
    2. Duty Factor, D=t /t  
    1 2  
    3. T  
    JM  
    - T = P  
    C
    * Z  
    (t)  
    DM thJC  
    101  
    0.001  
    10-5  
    10-4  
    10-3  
    10-2  
    10-1  
    100  
    102  
    t , SquareWave Pulse Duration [sec]  
    1
    www.onsemi.com  
    4
    Mechanical Dimensions  
    4.036  
    3.636  
    0.36  
    10.360  
    10.109  
    A
    M
    B A  
    C
    8.89  
    6.86  
    B
    2.860  
    2.660  
    1.400  
    1.146  
    6.477  
    6.121  
    7°  
    3°  
    3
    12.878  
    12.190  
    15.215  
    14.757  
    8.787  
    8.587  
    5°  
    3°  
    5°  
    3°  
    1
    2
    0.60 MAX  
    2.755  
    2.555  
    13.894  
    12.941  
    3.962  
    3.720  
    1.65  
    1.25  
    1.91  
    0.889  
    0.787  
    M
    0.36  
    C A B  
    0.457  
    0.357  
    2.640  
    2.440  
    5.180  
    4.980  
    NOTES:  
    5°  
    3°  
    5°  
    3°  
    A. PACKAGE REFERENCE: JEDEC TO220  
    VARIATION AC.  
    B. ALL DIMENSIONS ARE IN MILLIMETERS.  
    C. DIMENSION AND TOLERANCE AS PER ASME  
    Y14.5-2009.  
    4.672  
    4.472  
    D. DIMENSIONS ARE EXCLUSIVE OF BURRS,  
    MOLD FLASH AND TIE BAR PROTRUSIONS.  
    E. DRAWING FILE NAME:  
    TO220B02REV5FAIRCHILD  
    Dimensions in Millimeters  
    www.onsemi.com  
    5
    ON Semiconductor and  
    are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
    ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
    coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
    ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
    arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
    Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
    regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
    specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
    application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
    designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
    in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
    application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
    expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
    claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
    literature is subject to all applicable copyright laws and is not for resale in any manner.  
    PUBLICATION ORDERING INFORMATION  
    LITERATURE FULFILLMENT:  
    N. American Technical Support: 800−282−9855 Toll Free  
    USA/Canada  
    Europe, Middle East and Africa Technical Support:  
    Phone: 421 33 790 2910  
    Japan Customer Focus Center  
    Phone: 81−3−5817−1050  
    ON Semiconductor Website: www.onsemi.com  
    Order Literature: http://www.onsemi.com/orderlit  
    Literature Distribution Center for ON Semiconductor  
    19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
    Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
    Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
    Email: orderlit@onsemi.com  
    For additional information, please contact your local  
    Sales Representative  
    © Semiconductor Components Industries, LLC  
    www.onsemi.com  
    ❖
    配单直通车
    RURP1560-F085P产品参数
    型号:RURP1560-F085P
    Brand Name：ON Semiconductor
    是否无铅： 不含铅
    生命周期：Active
    IHS 制造商：ON SEMICONDUCTOR
    包装说明：R-PSFM-T2
    制造商包装代码：340BA
    Reach Compliance Code：compliant
    Factory Lead Time：7 weeks
    风险等级：5.81
    应用：ULTRA FAST SOFT RECOVERY
    配置：SINGLE
    二极管元件材料：SILICON
    二极管类型：RECTIFIER DIODE
    最大正向电压 (VF)：1.5 V
    JEDEC-95代码：TO-220AC
    JESD-30 代码：R-PSFM-T2
    最大非重复峰值正向电流：200 A
    元件数量：1
    相数：1
    端子数量：2
    最高工作温度：175 °C
    最低工作温度：-55 °C
    最大输出电流：15 A
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：FLANGE MOUNT
    参考标准：AEC-Q101
    最大重复峰值反向电压：600 V
    最大反向电流：100 µA
    最大反向恢复时间：0.07 µs
    反向测试电压：600 V
    表面贴装：NO
    技术：AVALANCHE
    端子形式：THROUGH-HOLE
    端子位置：SINGLE
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