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产品型号SBC807-40LT1G的概述

芯片SBC807-40LT1G的概述 SBC807-40LT1G是一款创新性的单片微处理器，主要用于各种嵌入式系统和应用程序。在现代电子工程领域，微处理器充当着运算、控制及通讯的重要角色，SBC807-40LT1G凭借其卓越的性能特点和丰富的功能集，在广泛应用中获得了良好的口碑。此芯片采用了先进的制造工艺，结合了高效能的设计理念，使得其在功耗和处理速度之间达到了良好的平衡。SBC807-40LT1G的主要应用领域包括家用电器、消费电子、汽车电子及工业控制等，为开发者提供了强大的硬件基础。芯片SBC807-40LT1G的详细参数 SBC807-40LT1G的关键参数能够有效地反映其性能： - 工作电压：2.3V - 5.5V - 工作频率：最高可达40MHz - 内存支持：集成64KB Flash内存及2KB SRAM - 引脚数：16引脚 - I/O接口：多达12个通用I/O引脚 ...

产品型号SBC807-40LT1G的Datasheet PDF文件预览

BC807−16LT1,

BC807−25LT1, BC807−40LT1

General Purpose

Transistors

PNP Silicon

http://onsemi.com

Features

COLLECTOR

• Pb−Free Packages are Available

BASE

MAXIMUM RATINGS

Rating

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

Symbol

Value

−45

Unit

EMITTER

CEO

CBO

EBO

−50

−5.0

−500

MARKING

DIAGRAM

Collector Current − Continuous

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

SOT−23

CASE 318

STYLE 6

xxxD

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

xxx

= 5A (BC807−16LT1)

5B1 (BC807−25LT1)

5C (BC807−40LT1)

= Date Code

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation Alumina Substrate,

556

°C/W

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

(Note 2) T = 25°C

300

2.4

mW/°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

°C/W

°C

T , T

−55 to

+150

stg

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 5

BC807−16LT1/D

BC807−16LT1, BC807−25LT1, BC807−40LT1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

−45

−50

−5.0

−

(BR)CEO

(I = −10 mA)

Collector−Emitter Breakdown Voltage

(BR)CES

(V = 0, I = −10 mA)

Emitter−Base Breakdown Voltage

(BR)EBO

(I = −1.0 mA)

Collector Cutoff Current

CBO

(V = −20 V)

(V = −20 V, T = 150°C)

−

−100

−5.0

ON CHARACTERISTICS

DC Current Gain

−

(I = −100 mA, V = −1.0 V)

BC807−16

BC807−25

BC807−40

100

160

250

−

250

400

600

−

(I = −500 mA, V = −1.0 V)

Collector−Emitter Saturation Voltage

(I = −500 mA, I = −50 mA)

−

−0.7

CE(sat)

Base−Emitter On Voltage

(I = −500 mA, I = −1.0 V)

BE(on)

−

−1.2

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

100

−

MHz

(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)

Output Capacitance

−0.7

obo

(V = −10 V, f = 1.0 MHz)

DEVICE ORDERING INFORMATION

Device

†

Package

SOT−23

Shipping

BC807−16LT1

3,000 Tape & Reel

10,000 Tape & Reel

BC807−16LT3

BC807−25LT1

3,000 Tape & Reel

10,000 Tape & Reel

3,000 Tape & Reel

BC807−25LT1G

SOT−23

(Pb−Free)

BC807−25LT3

BC807−40LT1

BC807−40LT1G

SOT−23

(Pb−Free)

BC807−40LT3

SOT−23

10,000 Tape & Reel

BC807−40LT3G

SOT−23

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

BC807−16LT1, BC807−25LT1, BC807−40LT1

1000

= −1.0 V

T = 25°C

100

−0.1

−1.0

−10

−100

−1000

I , COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

−1.0

−0.8

−0.6

−0.4

−1.0

T = 25°C

@ I /I = 10

C B

BE(sat)

−0.8

−0.6

−0.4

−0.2

BE(on)

@ V = −1.0 V

−500 mA

= −300 mA

−0.2

= −100 mA

@ I /I = 10

C B

CE(sat)

= −10 mA

−0.01

−0.1

−1.0

I , BASE CURRENT (mA)

−10

−100

−1.0

−10

−100

−1000

I , COLLECTOR CURRENT (mA)

Figure 2. Saturation Region

Figure 3. “On” Voltages

100

+1.0

for V

CE(sat)

−1.0

−2.0

for V

1.0

−0.1

−1.0

−10

−100

−1000

−1.0

−10

−100

I , COLLECTOR CURRENT

V , REVERSE VOLTAGE (VOLTS)

Figure 4. Temperature Coefficients

Figure 5. Capacitances

http://onsemi.com

BC807−16LT1, BC807−25LT1, BC807−40LT1

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−09

ISSUE AI

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.

INCHES

MILLIMETERS

DIM

MIN

0.1102

MAX

0.1197

MIN

2.80

1.20

0.99

0.36

1.70

0.10

0.085

0.45

0.89

2.10

0.45

MAX

3.04

1.40

1.26

0.50

2.10

0.25

0.177

0.60

1.02

2.50

0.60

0.0472 0.0551

0.0385 0.0498

0.0140 0.0200

0.0670 0.0826

0.0040 0.0098

0.0034 0.0070

0.0180 0.0236

0.0350 0.0401

0.0830 0.0984

0.0177 0.0236

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

0.8

0.031

inches

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

BC807−16LT1/D

http://onsemi.com

SBC807-40LT1G相关文章

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SBC807-40LT1G产品参数

型号:	SBC807-40LT1G
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	Active
IHS 制造商：	ON SEMICONDUCTOR
包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3
制造商包装代码：	318-08
Reach Compliance Code：	compliant
ECCN代码：	EAR99
Factory Lead Time：	4 weeks
风险等级：	1.48
Is Samacsys：	N
最大集电极电流 (IC)：	0.5 A
集电极-发射极最大电压：	45 V
配置：	SINGLE
最小直流电流增益 (hFE)：	250
JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.3 W
参考标准：	AEC-Q101
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

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