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产品型号SC1116的Datasheet PDF文件预览

SC1116

Linear FET Controller

For DDR Supplies

POWER MANAGEMENT

Description

Features

The SC1116 is a low cost controller for low power

linear DDR power supplies.

User can select FETs to optimize system current

rating/dropout/cost

Low V_DDQ, 0.5V to 2.5V

The SC1116 comes in a space saving SOT-23 6 pin

package.

-40°C to +85°C operating temperature

External compensation capable for low ESR loads

Minimum external components

0.6 mA Quiescent current

Guaranteed no shoot through

SOT-23 6L small package. Fully WEEE and RoHS

compliant

The SC1116 provides a dual gate drive for the top serial

and bottom parallel MOSFETs with internal shoot through

protection.

The wide range of input voltages (3V to 15V) allows the

chip to work in many various applications.

Applications

DDR supplies

SCSI

The variable output voltage is programmable from the

outside with an input divider or an external reference.

Line termination

Source / Sink LDOs

Wide range of V_DDQ, down to 0.5V

Typical Application Circuit

MOSFET N

VDDQ=2.5Vtyp

VTT=1.25Vtyp

1k0.5%

47uF

typ

SC1116

GND

VCC

GND

REF

DRVH

Vcc=3 to 15V

0.1uF

MOSFET N

DRVL

1k0.5%

typ

0.1uF

4.7nF

typ

4.7nF

typ

Notes:

(1) Values used for optional compensation are 1K and 4.7nF typical.

(2) When using 3V as Vcc, use of low threshold FETs is a must.

Revision: March 28, 2007

www.semtech.com

SC1116

POWER MANAGEMENT

Absolute Maximum Rating

Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified

in the Electrical Characteristics section is not implied.

Parameter

Symbol

V_CC

T_A

Maximum

-0.3 to +16.5

-40 to +85

-40 to +125

-65 to +150

95.7

Units

Input Supply Voltage

Operating Ambient Temperature Range

Operating Junction Temperature Range

Storage Temperature Range

°C

T_J

°C

T_STG

θ_JA

°C

Thermal Impedance Junction to Ambient

Thermal Impedance Junction to Case

Power Dissipation at T_A= 25°C

Lead Temperature (Soldering) 10 seconds

ESD Rating (Human Body Model)

°C/W

°C

61.7

θ_JC

P_D

250

T_LEAD

ESD

300

Electricial Characteristics

Unless otherwise specified, V_CC= 5V, 0.5V ≤ V_DDQ≤ 2.5V, R1 = R2 = 1kΩ +/- 0.1%.

Specifications with standard typeface are for T_J= 25°C, and limits in boldface type apply over the full operating temperature range

(T_A= -40°C to +85°C).

Parameter

Test Conditions

Min

Typ

Max

Units

Supply Voltage

Load Regulation ⁽¹⁾

IL: 0 + 3A

IL: 0 - 3A

-1

Quiescent Current/Standby Current

FB & REF Input Current

Gate Drive

V_CC= 15V, no load = 0A

V_CC= 15V

600

800

µA

100

Output Low

_SINK= 2.5mA

0.15

0.25

Output High

_SOURCE= 2.5mA

Vcc -0.25 Vcc -0.15

Note:

(1) For Load Regulation testing use a low duty cycle current pulse, when measuring VTT.

www.semtech.com

2007 Semtech Corp.

SC1116

POWER MANAGEMENT

Pin Configuration

Ordering Information

Part Number

SC1116ISKTR⁽¹⁾

SC1116ISKTRT⁽¹⁾⁽²⁾

Top Mark

Package

TOP VIEW

AH00

SOT-23 6L

VCC

GND

REF

1 6

2 5

3 4

DRVH

DRVL

Notes:

(1) Only available in tape and reel packaging. A reel

contains 3000 devices.

(2) Lead free option. Fully WEEE and RoHS compliant.

(SOT-23 6L)

Pin Descriptions

Pin # Pin Name Pin Function

VCC

GND

REF

Supply pin, connect a 3V to 15V supply and decouple to ground with a 0.1µF ceramic capacitor.

Power and signal ground.

Reference input. Output voltage will be regulated to this voltage.

Low side FET drive output.

DRVL

Feedback pin.

DRVH

High side FET drive output.

Block Diagram

www.semtech.com

2007 Semtech Corp.

SC1116

POWER MANAGEMENT

Application Information

Overview

The SC1116 linear controller is designed to meet the

JEDEC specifications for termination of DDR-SDRAM.

Double Data Rate (DDR) memory is clocked at the same

speed as older SDRAM (synchronous dynamic random

access memory), yet handles twice the amount of data

by using the rising and falling edge of the clock signal for

data transfers. Another difference is that DDR memory

requires 2.5V instead of 3.3V used by standard SDRAM.

The other feature that separates DDR memory from a

conventional type is employment of the V_TT– termination

voltage. Main requirements for the V_TTare that it must

track variations of V_DDQand be able to supply (source)

current, and absorb (sink) current.

The SC1116 controller offers a low cost solution for DDR

termination voltage regulation by using external pass el-

ements (MOSFETs). Having the flexibility of choosing the

MOSFETs allows for optimization on the basis of cost/

size/performance of the specific application.

Test Circuit & Waveforms

The test circuit is shown below in Figure 1.

Note that V_REFvoltage is supplied externally to eliminate

inaccuracy caused by resistor divider.

+/-3A

VTT=1.25Vtyp

Isource/Isink

Isink

Q 1

IR3714

3A Isource

VDDQ=2.5V

Power

Supply

100uF

32m

U 1

SC1116

270uF

22m

Vcc=5V

VCC

GND

REF

DRVH

2xIsink

0A to 6A Step

1uF

Pulse load, dc=50%

Q 2

IR3714

Current

Vref=1.25V

DRVL

Electronic

Probe

0.1uF

Load

4.7nF

Figure 1.

www.semtech.com

2007 Semtech Corp.

SC1116

POWER MANAGEMENT

Typical Characteristics

Regulation Vtt vs. Vref @ Is/s=1A; Vcc=5V

Regulation Vtt vs. Vref @ Is/s=5A; Vcc=5V

2.0%

1.0%

2.0%

1.0%

0.0%

-1.0%

-2.0%

-3.0%

-4.0%

-5.0%

-1.0%

-2.0%

-3.0%

-4.0%

-5.0%

0.2

0.3 0.4

0.5 0.6 0.7

0.8 0.9 1.0

1.1 1.2 1.3

0.2

0.3

0.4 0.5 0.6 0.7

0.8

0.9 1.0 1.1

1.2 1.3

Vref (Vddq/2), V

Regulation Vtt vs. Vref @ Is/s=5A; Vcc=12V

Regulation Vtt vs. Vref @ Is/s=1A; Vcc=12V

2.0%

1.0%

2.0%

1.0%

0.0%

-1.0%

-2.0%

-3.0%

-4.0%

-5.0%

-1.0%

-2.0%

-3.0%

-4.0%

-5.0%

0.2

0.3 0.4

0.5 0.6 0.7

0.8 0.9 1.0

1.1 1.2 1.3

0.2

0.3 0.4

0.5 0.6 0.7

0.8 0.9 1.0

1.1 1.2 1.3

Vref (Vddq/2), V

www.semtech.com

2007 Semtech Corp.

SC1116

POWER MANAGEMENT

Typical Characteristics (Cont.)

Max. Sourcing Current

vs. V_CC

V_DDQ= 2.5V

_REF= 1.25V

V_TT= 1.237V

3.5

4.5

5.5

6.5

SUPPLY VOLTAGE, V_CC(V)

Max. Sinking Current

vs. V_CC

4.4

4.3

4.2

4.1

V_DDQ= 2.5V

_REF= 1.25V

V_TT= 1.263V

3.9

3.8

3.7

3.6

3.5

4.5

5.5

6.5

SUPPLY VOLTAGE, V_CC(V)

www.semtech.com

2007 Semtech Corp.

SC1116

POWER MANAGEMENT

Typical Characteristics (Cont.)

Quiescent Current

vs. Temperature

520

510

500

V_CC= 5V

_DDQ= 2.5V

_REF= 1.25V

V_TT= 1.25V

I_LOAD= 0A

490

480

470

460

450

-40

-25 -10

110 125

TEMPERATURE °C

Quiescent Current

vs. V_CC

800

700

600

500

400

300

200

100

V_DDQ= 2.5V

_REF= 1.25V

V_TT= 1.25V

I_LOAD= 0A

125 ^oC

25 ^oC

0 ^oC

3.5

4.5

5.5

6.5

SUPPLY VOLTAGE, V_CC(V)

www.semtech.com

2007 Semtech Corp.

SC1116

POWER MANAGEMENT

Test Waveforms

V_TTTransient Response

V_CC= 5V

_DDQ= 2.5V

V_DDQ= 2.5V

V_REF= 1.25V

I _STEP

+1.75A

+2.3A

to –1.75A

to - 2.2A

Slew Rate:

2.5 A/uS

Slew Rate:

2.5 A/uS

Time (50us/div)

V_CC= 5V

_DDQ= 2.5V

V_REF= 1.25V

V_CC= 5V

_DDQ= 2.5V

V_REF= 1.25V

I _STEP

- 0.75A

+1.25A

to + 0.75A

to –1.25A

Slew Rate:

2.5 A/uS

Slew Rate:

2.5 A/uS

Time (50us/div)

www.semtech.com

2007 Semtech Corp.

SC1116

POWER MANAGEMENT

Test Waveforms (Cont.)

V_TTTransient Response

V_CC= 5V

_DDQ= 2.5V

V_REF= 1.25V

C_OUT= 47uF

ceramic

V_REF= 1.25V

I _STEP

- 0.5A

- 0.53A

to + 0.53A

Slew Rate:

2.5 A/uS

Slew Rate:

2.5 A/uS

Time (50us/div)

V_CC= 5V

_DDQ= 2.5V

V_REF= 1.25V

I _STEP

+ 0.03A

to - 2.25A

to + 2.25A

Slew Rate:

2.5 A/uS

Slew Rate:

2.5 A/uS

Time (20us/div)

www.semtech.com

2007 Semtech Corp.

SC1116

POWER MANAGEMENT

Evaluation Board

Top View

Top Layer

Evaluation Board Schematic

IR3714

VDDQ=2.5Vtyp

VTT=1.25Vtyp

GND

22uF

1k 0.5%

47uF

SC1116

VCC

GND

REF

DRVH

Vcc=3 to 15V

0.1

IR3714

DRVL

1k 0.5%

0.1

4.7nF

Notes:

(1) Values used for optional compensation are 1K and 4.7nF typical.

(2) When using 3V as Vcc, use of low threshold FETs is a must.

www.semtech.com

2007 Semtech Corp.

SC1116

POWER MANAGEMENT

Outline Drawing - SOT-23-6

DIMENSIONS

INCHES MILLIMETERS

DIM

MIN NOM MAX MIN NOM MAX

.057 0.90

.006 0.00

1.45

0.15

.035

A1 .000

A2 .035 .045 .051 .90 1.15 1.30

.010

.003

.020 0.25

.009 0.08

0.50

0.22

2X E/2

.110 .114 .122 2.80 2.90 3.10

E1 .060 .063 .069 1.50 1.60 1.75

.110 BSC

.037 BSC

.075 BSC

2.80 BSC

0.95 BSC

1.90 BSC

ccc C

2X N/2 TIPS

.012 .018 .024 0.30 0.45 0.60

(.024)

(0.60)

0°

10°

0°

10°

aaa

.004

.008

0.10

0.20

bbb

ccc

aaa C

SEATING

PLANE

bxN

bbb

GAGE

PLANE

0.25

C A-B D

(L1)

^DETAILA

^{SEE DETAIL}A

SIDE VIEW

NOTES:

1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).

2. DATUMS AND TO BE DETERMINED AT DATUM PLANE

-A-

-B-

-H-

3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS

OR GATE BURRS.

Minimum Land Pattern - SOT-23-6

DIMENSIONS

DIM

INCHES

(.098)

.055

MILLIMETERS

(2.50)

1.40

0.95

0.60

1.10

3.60

(C)

.037

.024

.043

.141

NOTES:

1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.

CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR

COMPANY'S MANUFACTURING GUIDELINES ARE MET.

Contact Information

Semtech Corporation

Power Management Products Division

200 Flynn Road, Camarillo, CA 93012

Phone: (805)498-2111 FAX (805)498-3804

www.semtech.com

2007 Semtech Corp.

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SC1116ISKTRT产品参数

型号:	SC1116ISKTRT
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Obsolete
零件包装代码：	SOT-23
包装说明：	LSSOP, TSOP6,.11,37
针数：	6
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	5.8
高边驱动器：	YES
接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3
长度：	2.9 mm
湿度敏感等级：	1
功能数量：	1
端子数量：	6
最高工作温度：	85 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	LSSOP
封装等效代码：	TSOP6,.11,37
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：	260
电源：	5 V
认证状态：	Not Qualified
座面最大高度：	1.45 mm
子类别：	MOSFET Drivers
最大供电电压：	15 V
最小供电电压：	3 V
标称供电电压：	5 V
表面贴装：	YES
温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子节距：	0.95 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	1.6 mm
Base Number Matches：	1

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