SI2302DS-T1-E3全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号SI2302DS-T1-E3的概述

SI2302DS-T1-E3芯片概述 SI2302DS-T1-E3是由国际知名半导体制造商Siliconix（后并入Vishay Intertechnology）生产的一款N沟道MOSFET（场效应管），广泛应用于电源管理、开关电路及其他多种领域。这款器件由于其优异的电气特性和高效的性能，成为了设计师们在选择低功耗、高效率组件时的热门选择。该芯片的最大源极与漏极电压（V_DS）为30V，最大漏极电流（I_D）为7.6A，这使得其在多种应用场景下表现出色。其在开关频率较高的应用中能够提供卓越的动态性能，从而在高效率电源设计中传递更大的功率。芯片详细参数 SI2302DS-T1-E3的详细电气参数如下： - V_DS：最大源极-漏极电压为30V - I_D：最大漏极电流为7.6A - R_DS(on)：最低在10V栅极驱动下，导通电阻小于0.079Ω - V_GS(th)：栅极阈值电压...

产品型号SI2302DS-T1-E3的Datasheet PDF文件预览

Si2302DS

Vishay Siliconix

N-Channel 1.25-W, 2.5-V MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.085 @ V = 4.5 V

2.8

2.4

0.115 @ V = 2.5 V

TO-236

(SOT-23)

Top View

Si2302DS (A2)*

*Marking Code

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

T = 25_C

2.8

Continuous Drain Current (T = 150_C)

T = 70_C

2.2

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

1.6

T = 25_C

1.25

0.80

–55 to 150

Power Dissipation

T = 70_C

Operating Junction and Storage Temperature Range

T , T

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambient

100

166

thJA

_C/W

Maximum Junction-to-Ambient

Notes

a. Pulse width limited by maximum junction temperature.

b. Surface Mounted on FR4 Board, t v 5 sec.

c. Surface Mounted on FR4 Board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70628

S-53600—Rev. D, 22-May-97

www.vishay.com S FaxBack 408-970-5600

2-1

Si2302DS

Vishay Siliconix

SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

= 0 V, I = 10 mA

BR)DSS

= V , I = 50 mA

0.65

GS(th)

= 0 V, V = "8 V

"100

GSS

= 20 V, V = 0 V

Zero Gate Voltage Drain Current

DSS

= 20 V, V = 0 V, T = 55_C

w 5 V, V = 4.5 V

On-State Drain Current

D(on)

w 5 V, V = 2.5 V

= 4.5 V, I = 3.6 A

0.07

0.085

0.115

Drain-Source On-Resistance

DS(on)

= 2.5 V, I = 3.1 A

0.085

Forward Transconductance

= 5 V, I = 3.6 A

Diode Forward Voltage

= 1.6 A, V = 0 V

0.76

1.2

Dynamic

Total Gate Charge

5.4

0.65

1.60

340

115

Gate-Source Charge

Gate-Drain Charge

= 10 V, V = 4.5 V, I = 3.6 A

iss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

= 10 V, V = 0 V, f = 1 MHz

oss

rss

Switching

Turn-On Delay Time

Rise Time

d(on)

= 10 V, R = 5.5 W

= 4.5 V, R = 6 W

GEN G

^ 3.6 A, V

Turn-Off Delay Time

Fall-Time

d(off)

Notes

a. Pulse test: PW v300 ms duty cycle v2%..

VNLR02

Document Number: 70628

S-53600—Rev. D, 22-May-97

www.vishay.com S FaxBack 408-970-5600

2-2

Si2302DS

Vishay Siliconix

TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)

Output Characteristics

Transfer Characteristics

= 5 thru 2.5 V

2 V

= 125_C

25_C

1.5 V

0, 0.5, 1 V

–55_C

0.5

1.0

1.5

2.0

2.5

– Drain-to-Source Voltage (V)

– Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

0.15

1000

800

600

400

200

0.12

0.09

0.06

0.03

= 2.5 V

= 4.5 V

iss

oss

rss

– Drain Current (A)

– Drain-to-Source Voltage (V)

Gate Charge

On-Resistance vs. Junction Temperature

1.8

1.6

1.4

1.2

1.0

0.8

0.6

= 10 V

= 3.6 A

= 4.5 V

I = 3.6 A

–50

100

150

– Total Gate Charge (nC)

T – Junction Temperature (_C)

Document Number: 70628

S-53600—Rev. D, 22-May-97

www.vishay.com S FaxBack 408-970-5600

2-3

Si2302DS

Vishay Siliconix

TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.20

0.16

0.12

0.08

0.04

T = 150_C

= 3.6 A

T = 25_C

0.2

0.4

0.6

0.8

1.0

1.2

– Source-to-Drain Voltage (V)

– Gate-to-Source Voltage (V)

Threshold Voltage

Single Pulse Power

0.2

0.1

–0.0

–0.1

–0.2

–0.3

–0.4

= 250 mA

= 25_C

Single Pulse

–50

100

150

0.01

0.10

1.00

Time (sec)

10.00

– Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

–4

–3

–2

–1

Square Wave Pulse Duration (sec)

Document Number: 70628

S-53600—Rev. D, 22-May-97

www.vishay.com S FaxBack 408-970-5600

2-4

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

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SI2302DS-T1-E3产品参数

型号:	SI2302DS-T1-E3
生命周期：	Obsolete
零件包装代码：	SOT-23
包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.06
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	2.8 A
最大漏源导通电阻：	0.085 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-236
JESD-30 代码：	R-PDSO-G3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified
表面贴装：	YES
端子形式：	GULL WING
端子位置：	DUAL
晶体管元件材料：	SILICON
Base Number Matches：	1

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