SI4435DY各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号SI4435DY的概述

芯片SI4435DY概述 SI4435DY是一款高性能的RF（射频）收发器，特别适用于短距离无线通信的应用。它采用了高集成度的设计，能够在433MHz、868MHz和915MHz等多个频段下工作，支持多种调制方式和协议，因此在物联网、无线传感器网络、远程控制系统等领域得到了广泛应用。该芯片的设计旨在优化功耗表现，使其能够在电池供电的应用中发挥长效益。通过内置的高效率功率放大器和灵敏度的接收电路，SI4435DY可以在较低的功耗下实现较远的通信距离，适合需要长时间运行且不方便频繁更换电池的场景。 SI4435DY的详细参数 SI4435DY提供了一系列详细参数，这些参数影响着其在实际应用中的性能表现： - 频率范围：支持433MHz、868MHz、915MHz等多个频段。用户可以根据需求选择不同的工作频段； - 调制方式：支持FSK（频移键控）、OOK（开关键控）、GFSK（高斯频移键...

产品型号SI4435DY的Datasheet PDF文件预览

October 2001

SI4435DY

30V P-Channel PowerTrench^ÒMOSFET

General Description

Features

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gave drive

voltage ratings (4.5V – 25V).

· –8.8 A, –30 V

R_DS(ON)= 20 mW @ V_GS= –10 V

R_DS(ON)= 35 mW @ V_GS= –4.5 V

· Low gate charge (17nC typical)

· Fast switching speed

Applications

· Power management

· Load switch

· High performance trench technology for extremely

low R_DS(ON)

· Battery protection

· High power and current handling capability

SO-8

Pin 1SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–30

V_GSS

I_D

Gate-Source Voltage

±20

Drain Current – Continuous

– Pulsed

(Note 1a)

–8.8

–50

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

(Note 1)

125

R_qJA

R_qJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

SI4435DY

13’’

12mm

2500 units

Ó2001 Fairchild Semiconductor Corporation

SI4435DY Rev D1(W)

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage V_GS= 0 V, I_D= –250 mA

–30

Breakdown Voltage Temperature

Coefficient

DBVDSS

DT_J

I_D= –250 mA, Referenced to 25°C

V_DS= –24 V, V_GS= 0 V

V_GS= 20 V, V_DS= 0 V

–21

mV/°C

I_DSS

Zero Gate Voltage Drain Current

–1

I_GSSF

I_GSSR

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

100

–100

V_GS= –20 V, V_DS= 0 V

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

Temperature Coefficient

Static Drain–Source

On–Resistance

V_DS= V_GS, I_D= –250 mA

–1

–1.7

–3

DVGS(th)

DT_J

R_DS(on)

I_D= –250 mA, Referenced to 25°C

mV/°C

V_GS= –10 V,

I_D= –8.8 A

V_GS= –4.5 V, I_D= –6.7 A

V_GS= –10 V, I_D= –8.8A, T_J=125°C

I_D(on)

g_FS

On–State Drain Current

V_GS= –10 V,

V_DS= –5 V,

V_DS= –5 V

I_D= –8.8 A

–40

Forward Transconductance

Dynamic Characteristics

Input Capacitance

1604

408

iss

V_DS= –15 V,

f = 1.0 MHz

V _GS= 0 V,

C_oss

Output Capacitance

rss

Reverse Transfer Capacitance

202

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DD= –15 V,

V_GS= –10 V,

I_D= –1 A,

R_GEN= 6 W

13.5

Q_g

V_DS= –15 V,

V_GS= –5 V

I_D= –8.8 A,

Q_gs

Q_gd

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

–2.1

Drain–Source Diode Forward

V_SD

V_GS= 0 V, I_S= –2.1 A (Note 2)

–0.73 –1.2

Voltage

Notes:

1. R_qJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_qJCis guaranteed by design while R_qCAis determined by the user's board design.

a) 50°C/W when

mounted on a 1in

pad of 2 oz copper

b) 105°C/W when

mounted on a .04 in

pad of 2 oz copper

c) 125°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%

SI4435DY Rev D1(W)

Typical Characteristics

1.8

1.6

1.4

1.2

V_GS= -10V

-6.0V

-4.5V

V_GS=-4.5V

-4.0V

-4.5V

-3.5V

-5.0V

-6.0V

-7.0V

-3.0V

-8.0V

-10V

0.8

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

1.4

1.2

0.07

I_D= -8.8A

V_GS= -10V

I_D= -4.4A

0.06

0.05

0.04

0.03

0.02

0.01

T_A= 125^oC

0.8

0.6

T_A= 25^oC

-50

-25

100

125

150

175

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_GS=0V

V_DS= -5V

T_A= -55^oC

25^oC

T_A= 125^oC

125^oC

25 C

0.1

-55^oC

0.01

0.001

0.0001

1.5

2.5

3.5

0.2

0.4

0.6

0.8

1.2

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

SI4435DY Rev D1(W)

Typical Characteristics

2500

2000

1500

1000

500

V_DS= -5V

f = 1 MHz

V_GS= 0 V

I_D= -8.8A

-10V

-15V

C_ISS

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

SINGLE PULSE

R_DS(ON)LIMIT

100ms

R_q= 125°C/W

T_A= 25°C

1ms

10ms

100ms

10s

V_GS= -10V

SINGLE PULSE

R_q_JA= 125^oC/W

T_A= 25^oC

0.1

0.01

0.1

100

0.001

0.01

0.1

100

1000

-V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R_qJA(t) = r(t) + R_qJA

R_qJA = 125^oC/W

0.2

0.1

0.05

0.02

P(pk)

0.01

TJ - TA = P * R JA(t)

Duty Cycle, D = t1 / t2

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

SI4435DY Rev D1(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarksꢀ

SILENT SWITCHER

SMARTSTART

SPM

STAR*POWER

Stealth

SuperSOT-3

SuperSOT-6

SuperSOT-8

SyncFET

UHC

UltraFET

VCX

FAST

ACEx

Bottomless

CoolFET

CROSSVOLT

DenseTrench

DOME

MICROWIRE

OPTOLOGIC

OPTOPLANAR

PACMAN

POP

FASTr

FRFET

GlobalOptoisolator

GTO

HiSeC

Power247

I²C

EcoSPARK

PowerTrench

E²CMOS^TM

ISOPLANAR

LittleFET

MicroFET

MicroPak

QFET

QT Optoelectronics

Quiet Series

EnSigna^TM

TinyLogic

TruTranslation

FACT

FACT Quiet Series

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERSꢀ

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ

As used herein:

1ꢀ Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

userꢀ

2ꢀ A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectivenessꢀ

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product developmentꢀ Specifications may change in

any manner without noticeꢀ

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later dateꢀ

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

designꢀ

No Identification Needed

Obsolete

Full Production

This datasheet contains final specificationsꢀ Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve designꢀ

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductorꢀ

The datasheet is printed for reference information onlyꢀ

Revꢀ H5

SI4435DY相关文章

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SI4435DY产品参数

型号:	SI4435DY
是否无铅：	含铅
是否Rohs认证：	不符合
生命周期：	Obsolete
零件包装代码：	SOIC
包装说明：	SO-8
针数：	8
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.28
Is Samacsys：	N
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	8 A
最大漏极电流 (ID)：	8 A
最大漏源导通电阻：	0.02 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	MS-012AA
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0
湿度敏感等级：	1
元件数量：	1
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	245
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2.5 W
最大脉冲漏极电流 (IDM)：	50 A
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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