SI5401DC-T1-E3全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

Si5401DC

Vishay Siliconix

New Product

P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

D Ultra-Low On-Resistance

V_DS(V)

r_DS(on)(W)

I_D(A)

Q_g(Typ)

D Thermally Enhanced ChipFETr Package

D 40% Smaller Footprint Than TSOP-6

APPLICATIONS

0.032 @ V = −4.5 V

−7.1

−6.4

−5.5

GS

−20

0.040 @ V = −2.5 V

16.5

GS

0.053 @ V = −1.8 V

GS

D Load Switch, PA Switch, and Battery Switch

for Portable Devices

1206-8 ChipFETr

1

S

D

G

Marking Code

BO XXX

D

G

S

Lot Traceability

and Date Code

Part # Code

D

Bottom View

P-Channel MOSFET

Ordering Information: Si5401DC-T1—E3

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

A

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

V

−20

DS

V

GS

"8

T

= 25_C

= 85_C

−5.2

−3.7

−7.1

−5.1

A

a

Continuous Drain Current (T = 150_C)

I

D

J

T

A

Pulsed Drain Current

I

DM

−20

a

Continuous Source Current

I

−2.1

2.5

−1.1

1.3

S

T

= 25_C

= 85_C

A

a

Maximum Power Dissipation

P

W

D

T

A

1.3

0.7

Operating Junction and Storage Temperature Range

T , T

−55 to 150

J

stg

_C

b, c

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

40

80

15

50

95

20

a

Maximum Junction-to-Ambient

R

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 73225

S-50038—Rev. A, 17-Jan-05

www.vishay.com

1

Si5401DC

New Product

Vishay Siliconix

SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)

J

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

Gate-Body Leakage

V

= V , I = −250 mA

−0.40

−1.0

V

GS(th)

DS

GS

D

I

V

= 0 V, V = "8 V

"100

nA

GSS

DS

GS

V

= −20 V, V = 0 V

−1

−5

DS

GS

Zero Gate Voltage Drain Current

I

mA

DSS

V

DS

= −20 V, V = 0 V, T = 85_C

GS

J

a

On-State Drain Current

I

V

DS

p−5 V, V = −4.5 V

−20

A

D(on)

GS

V

= −4.5 V, I = −5.2 A

0.026

0.033

0.044

0.032

0.040

0.053

GS

D

a

V

= −2.5 V, I = −4.6 A

Drain-Source On-State Resistance

r

W

GS

D

DS(on)

V

= −1.8 V, I = −1.9 A

D

a

Forward Transconductance

g

20

S

V

= −10 V, I = −5.2 A

fs

DS

D

a

Diode Forward Voltage

V

SD

I

= −1.1 A, V = 0 V

−0.8

−1.2

S

GS

Dynamic^b

Total Gate Charge

Q

25

16.5

g

V

= −10 V, V = −4.5 V, I = −5.2 A

nC

DS

GS

D

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Q

1.7

3.5

9

gs

gd

R

f = 1 MHz

W

g

t

10

15

40

d(on)

t

25

r

V

= −10 V, R = 10 W

L

GEN g

DD

I

D

^ −1 A, V

= −4.5 V, R = 6 W

Turn-Off Delay Time

Fall Time

t

115

70

175

105

60

ns

d(off)

t

f

Source-Drain Reverse Recovery Time

Reverse Recovery Charge

t

rr

30

I

F

= −1.1 A, di/dt = 100 A/ms

Q

140

nC

rr

Notes

a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics

Transfer Characteristics

20

16

12

8

20

16

12

8

T

= −55_C

25_C

C

V

GS

= 5 thru 2 V

125_C

1.5 V

4

1 V

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25

V

DS

− Drain-to-Source Voltage (V)

V

GS

− Gate-to-Source Voltage (V)

Document Number: 73225

S-50038—Rev. A, 17-Jan-05

www.vishay.com

2

Si5401DC

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current

Capacitance

2000

1800

1600

1400

1200

1000

800

0.10

0.08

0.06

C

iss

V

GS

= 1.8 V

V

= 2.5 V

GS

0.04

0.02

0.00

600

C

400

oss

V

= 4.5 V

GS

200

C

rss

0

4

8

12

16

20

0

4

8

12

16

20

I

D

− Drain Current (A)

V

DS

− Drain-to-Source Voltage (V)

Gate Charge

On-Resistance vs. Junction Temperature

5

4

3

2

1

0

1.6

1.4

1.2

1.0

0.8

0.6

V

D

= 10 V

V

= 4.5 V, 2.5 V, 1.8 V

DS

GS

I

= 5.2 A

I = 5.2 A

D

0

4

8

12

16

20

−50 −25

0

25

50

75

100 125 150

Q

− Total Gate Charge (nC)

T

− Junction Temperature (_C)

g

J

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.12

0.10

0.08

0.06

0.04

0.02

0.00

20

10

I

= 5.2 A

D

T

= 150_C

J

T

= 125_C

J

T

= 125_C

J

T

= 25_C

J

T

= 25_C

J

1

0.0

0.2

V

0.4

0.6

0.8

1.0

1.2

0

1

2

3

4

5

− Source-to-Drain Voltage (V)

V

GS

− Gate-to-Source Voltage (V)

SD

Document Number: 73225

S-50038—Rev. A, 17-Jan-05

www.vishay.com

3

Si5401DC

New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage

Single Pulse Power

0.4

50

40

30

0.3

I

D

= 250 mA

0.2

0.1

20

10

0

0.0

−0.1

−0.2

−3

−2

−1

−50 −25

0

25

50

75

100 125 150

10

1

10

100

600

T

− Temperature (_C)

Time (sec)

J

Safe Operating Area

100

I

Limited

DM

*r

DS(on)

Limited

10

1

P(t) = 0.001

P(t) = 0.01

I

D(on)

Limited

P(t) = 0.1

P(t) = 1

T

= 25_C

C

P(t) = 10

dc

0.1

Single Pulse

BV

DSS

Limited

0.01

0.1

1

10

100

V

− Drain-to-Source Voltage (V)

DS

*V u minimum V at which r is specified

DS(on)

GS

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Duty Cycle = 0.5

0.2

0.1

Notes:

P

DM

0.1

0.05

0.02

t

1

t

2

t

1

2

1. Duty Cycle, D =

2. Per Unit Base = R

= 80_C/W

thJA

(t)

3. T − T = P

Z

JM

A

DM thJA

Single Pulse

4. Surface Mounted

0.01

−4

−3

−2

−1

10

1

10

100

600

Square Wave Pulse Duration (sec)

Document Number: 73225

S-50038—Rev. A, 17-Jan-05

www.vishay.com

4

Si5401DC

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

−4

−3

−2

−1

10

1

10

Square Wave Pulse Duration (sec)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and

Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?73225.

Document Number: 73225

S-50038—Rev. A, 17-Jan-05

www.vishay.com

5

型号:	SI5401DC-T1-E3
是否Rohs认证：	符合
生命周期：	Obsolete
包装说明：	ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.81
Is Samacsys：	N
其他特性：	ULTRA LOW RESISTANCE
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	5.2 A
最大漏极电流 (ID)：	5.2 A
最大漏源导通电阻：	0.032 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-C8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2.5 W
子类别：	Other Transistors
表面贴装：	YES
端子面层：	PURE MATTE TIN
端子形式：	C BEND
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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