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    • SIT1602BIL1-30E
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    • QQ:857273081QQ：857273081 复制
      QQ:1594462451QQ：1594462451 复制
    • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
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    产品型号SIT1602BIL1-30E的Datasheet PDF文件预览

    SiT1602B  
    Low Power, Standard Frequency Oscillator  
    Features  
    Applications  
    ◼
    52 standard frequencies between 3.57 MHz and  
    77.76 MHz  
    ◼
    Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,  
    SSD, GPON, EPON, etc  
    ◼
    ◼
    ◼
    100% pin-to-pin drop-in replacement to quartz-based XO  
    Excellent total frequency stability as low as ±20 ppm  
    Operating temperature from -40°C to 85°C. For 125°C  
    and/or -55°C options, refer to SiT1618, SiT8918, SiT8920  
    Low power consumption of 3.5 mA typical at 1.8 V  
    Qualify just one device with 1.62 V to 3.63 V continuous  
    supply voltage  
    ◼
    Ideal for high-speed serial protocols such as: USB,  
    SATA, SAS, Firewire, 100M/1G/10G Ethernet, etc.  
    ◼
    ◼
    ◼
    ◼
    ◼
    ◼
    Standby mode for longer battery life  
    Fast startup time of 5 ms  
    LVCMOS/HCMOS compatible output  
    Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0,  
    3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm  
    Instant samples with Time Machine II and Field  
    Programmable Oscillators  
    RoHS and REACH compliant, Pb-free, Halogen-free  
    and Antimony-free  
    ◼
    ◼
    ◼
    For AEC-Q100 oscillators, refer to SiT8924 and SiT8925  
    Electrical Characteristics  
    All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise  
    stated. Typical values are at 25°C and nominal supply voltage.  
    Table 1. Electrical Characteristics  
    Condition  
    Parameters  
    Symbol  
    Min.  
    Typ.  
    Max.  
    Unit  
    Frequency Range  
    52 standard frequencies between  
    3.57 MHz and 77.76 MHz  
    Refer to Table 13 for the exact list of supported frequencies  
    MHz  
    Output Frequency Range  
    f
    Frequency Stability and Aging  
    Inclusive of initial tolerance at 25°C, 1st year aging at 25°C,  
    and variations over operating temperature, rated power  
    supply voltage and load.  
    -20  
    -25  
    -50  
    –
    –
    –
    +20  
    +25  
    +50  
    ppm  
    ppm  
    ppm  
    Frequency Stability  
    F_stab  
    T_use  
    Operating Temperature Range  
    -20  
    -40  
    –
    –
    +70  
    +85  
    °C  
    °C  
    Extended Commercial  
    Industrial  
    Operating Temperature Range  
    Supply Voltage Options  
    Supply Voltage and Current Consumption  
    Contact SiTime for 1.5 V support  
    1.62  
    2.25  
    2.52  
    2.7  
    1.8  
    2.5  
    2.8  
    3.0  
    3.3  
    –
    1.98  
    2.75  
    3.08  
    3.3  
    V
    V
    V
    V
    V
    V
    V
    Vdd_1.8  
    Vdd_2.5  
    Vdd_2.8  
    Vdd_3.0  
    Vdd_3.3  
    Vdd_XX  
    Vdd_YY  
    Idd  
    2.97  
    2.25  
    1.62  
    3.63  
    3.63  
    3.63  
    –
    No load condition, f = 20 MHz, Vdd_2.8, Vdd_3.0, Vdd_3.3,  
    Vdd_XX, Vdd_YY  
    Current Consumption  
    –
    3.8  
    4.5  
    mA  
    –
    –
    3.7  
    3.5  
    4.2  
    4.1  
    mA  
    mA  
    No load condition, f = 20 MHz, Vdd_2.5  
    No load condition, f = 20 MHz, Vdd_1.8  
    Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY.  
    OE = GND, Output in high-Z state  
    OE Disable Current  
    Standby Current  
    I_OD  
    I_std  
    –
    –
    –
    –
    –
    4.2  
    4.0  
    4.3  
    mA  
    mA  
    A  
    Vdd_1.8. OE = GND, Output in high-Z state  
    ST = GND, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY.  
    Output is weakly pulled down  
    2.6  
    –
    –
    1.4  
    0.6  
    2.5  
    1.3  
    ST = GND, Vdd_2.5, Output is weakly pulled down  
    ST = GND, Vdd_1.8, Output is weakly pulled down  
    A  
    A  
    Rev 1.07  
    10 March 2021  
    www.sitime.com  
    SiT1602B Low Power, Standard Frequency Oscillator  
    Table 1. Electrical Characteristics (continued)  
    Parameters  
    Symbol  
    Min.  
    Typ.  
    Max.  
    Unit  
    Condition  
    LVCMOS Output Characteristics  
    Duty Cycle  
    DC  
    45  
    –
    –
    1
    55  
    2
    %
    ns  
    All Vdds. See Duty Cycle definition in Figure 3 and Footnote 6  
    20% - 80% Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3  
    20% - 80% Vdd_1.8  
    Rise/Fall Time  
    Tr, Tf  
    –
    1.3  
    –
    2.5  
    2
    ns  
    –
    ns  
    20% - 80% Vdd_XX  
    –
    –
    2.7  
    –
    ns  
    20% - 80% Vdd_YY  
    Output High Voltage  
    Output Low Voltage  
    VOH  
    VOL  
    90%  
    –
    Vdd  
    IOH = -4 mA (Vdd_3.0 and Vdd_3.3)  
    IOH = -3 mA (Vdd_2.8 and Vdd_ 2.5)  
    IOH = -2 mA (Vdd_1.8)  
    –
    –
    10%  
    Vdd  
    IOH = -4 mA (Vdd_3.0 and Vdd_3.3)  
    IOH = -3 mA (Vdd_2.8 and Vdd_ 2.5)  
    IOH = -2 mA (Vdd_1.8)  
    Input Characteristics  
    Input High Voltage  
    Input Low Voltage  
    VIH  
    VIL  
    70%  
    –
    –
    –
    –
    30%  
    150  
    –
    Vdd  
    Pin 1, OE or ST  
    Vdd  
    k  
    Pin 1, OE or ST  
    Input Pull-up Impedance  
    Z_in  
    50  
    2
    87  
    –
    Pin 1, OE logic high or logic low, or ST logic high  
    Pin 1, ST logic low  
    M  
    Startup and Resume Timing  
    Startup Time  
    T_start  
    T_oe  
    –
    –
    –
    –
    5
    ms  
    ns  
    Measured from the time Vdd reaches its rated minimum value  
    Enable/Disable Time  
    138  
    f = 77.76 MHz. For other frequencies,  
    T_oe = 100 ns + 3*cycles  
    Resume Time  
    T_resume  
    T_jitt  
    –
    –
    –
    5
    ms  
    ps  
    Measured from the time ST pin crosses 50% threshold  
    Jitter  
    RMS Period Jitter  
    1.8  
    3
    f = 75 MHz, Vdd_1.8, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3,  
    Vdd_XX,  
    –
    –
    –
    3.3  
    25  
    ps  
    ps  
    f = 75 MHz, Vdd_YY  
    Peak-to-peak Period Jitter  
    RMS Phase Jitter (random)  
    T_pk  
    12  
    f = 75 MHz, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX,  
    Vdd_YY  
    –
    –
    14  
    30  
    ps  
    ps  
    f = 75 MHz, Vdd_1.8  
    T_phj  
    0.5  
    0.9  
    f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz.  
    Vdd_1.8, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX  
    –
    –
    –
    1.3  
    –
    2
    ps  
    ps  
    ps  
    f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz.  
    Vdd_1.8, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX  
    1.4  
    2.3  
    f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz.  
    Vdd_YY  
    –
    f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz.  
    Vdd_YY  
    Table 2. Pin Description  
    Pin  
    Symbol  
    Functionality  
    H[1]: specified frequency output  
    Top View  
    Output Enable  
    L: output is high impedance. Only output driver is disabled.  
    H[1]: specified frequency output  
    L: output is low (weak pull down). Device goes to sleep mode. Supply  
    current reduces to I_std.  
    Any voltage between 0 and Vdd or Open[1]: Specified frequency  
    output. Pin 1 has no function.  
    OE/S̅ T̅ ̅ /NC  
    VDD  
    OUT  
    1
    OE/S̅ T̅ ̅ /NC  
    Standby  
    No Connect  
    GND  
    2
    3
    4
    GND  
    OUT  
    VDD  
    Power  
    Output  
    Power  
    Electrical ground  
    Oscillator output  
    Power supply voltage[2]  
    Figure 1. Pin Assignments  
    Notes:  
    1. In OE or S̅T̅̅ mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.  
    2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.  
    Rev 1.07  
    Page 2 of 18  
    www.sitime.com  
     
     
    SiT1602B Low Power, Standard Frequency Oscillator  
    Table 3. Absolute Maximum Limits  
    Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance  
    of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.  
    Parameter  
    Min.  
    -65  
    -0.5  
    –
    Max.  
    150  
    4
    Unit  
    °C  
    V
    StorageTemperature  
    Vdd  
    2000  
    V
    ElectrostaticDischarge  
    Soldering Temperature (follow standard Pb free  
    soldering guidelines)  
    –
    –
    260  
    150  
    °C  
    °C  
    JunctionTemperature[3]  
    Note:  
    3. Exceeding this temperature for extended period of time may damage the device.  
    Table 4. Thermal Consideration[4]  
    JA, 4 Layer Board  
    JA, 2 Layer Board  
    JC, Bottom  
    Package  
    (°C/W)  
    (°C/W)  
    (°C/W)  
    30  
    7050  
    5032  
    3225  
    2520  
    2016  
    142  
    97  
    273  
    199  
    212  
    222  
    252  
    24  
    109  
    117  
    152  
    27  
    26  
    36  
    Note:  
    4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.  
    Table 5. Maximum Operating JunctionTemperature[5]  
    Max Operating Temperature(ambient)  
    Maximum Operating JunctionTemperature  
    70°C  
    85°C  
    80°C  
    95°C  
    Note:  
    5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.  
    Table 6. Environmental Compliance  
    Parameter  
    Condition/TestMethod  
    MIL-STD-883F, Method2002  
    Mechanical Shock  
    Mechanical Vibration  
    TemperatureCycle  
    Solderability  
    MIL-STD-883F, Method 2007  
    JESD22, Method A104  
    MIL-STD-883F, Method2003  
    MSL1 @ 260°C  
    Moisture Sensitivity Level  
    Rev 1.07  
    Page 3 of 18  
    www.sitime.com  
     
     
     
    SiT1602B Low Power, Standard Frequency Oscillator  
    Test Circuit and Waveform[6]  
    Vdd  
    Vout  
    Test Point  
    tr  
    tf  
    4
    3
    80% Vdd  
    50%  
    Power  
    Supply  
    0.1 uF  
    15pF  
    2
    (including probe  
    and fixture  
    capacitance)  
    20% Vdd  
    1
    High Pulse  
    (TH)  
    Low Pulse  
    (TL)  
    Period  
    Vdd  
    OE/ST Function  
    1 kΩ  
    Figure 3. Waveform  
    Figure 2. Test Circuit  
    Note:  
    6. Duty Cycle is computed as Duty Cycle =TH/Period.  
    Timing Diagrams  
    Vdd  
    Vdd  
    90% Vdd  
    50% Vdd  
    ST Voltage  
    [7]  
    T_start  
    T_resume  
    No Glitch  
    Pin 4 Voltage  
    during start up  
    CLK Output  
    CLK Output  
    HZ  
    HZ  
    T_start: Time to start from power-off  
    T_resume: Time to resume from ST  
    Figure 4. Startup Timing (OE/ S̅ T̅ ̅ Mode)  
    Figure 5. Standby Resume Timing ( S  
    ̅
    T
    ̅
    ̅
    ModeOnly)  
    Vdd  
    T_oe  
    Vdd  
    50% Vdd  
    OE Voltage  
    OE Voltage  
    CLK Output  
    50% Vdd  
    T_oe  
    CLK Output  
    HZ  
    HZ  
    T_oe: Time to re-enable the clock output  
    T_oe: Time to put the output in High Z mode  
    Figure 6. OE Enable Timing (OE Mode Only)  
    Figure 7. OE Disable Timing (OE ModeOnly)  
    Note:  
    7. SiT1602 has “no runt” pulses and “no glitch” output during startup or resume.  
    Rev 1.07  
    Page 4 of 18  
    www.sitime.com  
     
     
    SiT1602B Low Power, Standard Frequency Oscillator  
    Performance Plots[8]  
    1.8 2.5 2.8 3.0 3.3  
    DUT1  
    DUT6  
    DUT2  
    DUT7  
    DUT3  
    DUT8  
    DUT4  
    DUT9  
    DUT5  
    DUT10  
    5.2  
    5.0  
    4.8  
    4.6  
    4.4  
    4.2  
    4.0  
    3.8  
    3.6  
    3.4  
    3.2  
    3.0  
    20  
    15  
    10  
    5
    0
    -5  
    -10  
    -15  
    -20  
    -40  
    -20  
    0
    20  
    40  
    60  
    80  
    10  
    20  
    30  
    40  
    50  
    60  
    70  
    80  
    Figure 8. Idd vs Frequency  
    Figure 9. Frequency vsTemperature  
    1.8 V 2.5 V 2.8 V 3.0 V 3.3 V  
    55  
    4.0  
    3.5  
    3.0  
    2.5  
    2.0  
    1.5  
    1.0  
    0.5  
    0.0  
    54  
    53  
    52  
    51  
    50  
    49  
    48  
    47  
    46  
    45  
    10  
    20  
    30  
    40  
    50  
    60  
    70  
    80  
    10  
    20  
    30  
    40  
    50  
    60  
    70  
    80  
    Figure 10. RMS Period Jitter vs Frequency  
    Figure 11. Duty Cycle vs Frequency  
    1.8 V  
    2.5 V  
    2.8 V  
    3.0 V  
    3.3 V  
    1.8 V  
    2.5 V  
    2.8 V  
    3.0 V  
    3.3 V  
    2.5  
    2.0  
    1.5  
    1.0  
    0.5  
    0.0  
    2.5  
    2.0  
    1.5  
    1.0  
    0.5  
    0.0  
    -40  
    -15  
    10  
    35  
    60  
    85  
    -40  
    -15  
    10  
    35  
    60  
    85  
    Figure 12. 20%-80% Rise Timevs Temperature  
    Figure 13. 20%-80% Fall Time vsTemperature  
    Rev 1.07  
    Page 5 of 18  
    www.sitime.com  
    SiT1602B Low Power, Standard Frequency Oscillator  
    Performance Plots[8] (continued)  
    1.8 V  
    2.5 V 2.8 V 3.0 V 3.3  
    V
    1.8 V  
    2.5 V 2.8 V  
    3.0 V 3.3 V  
    0.9  
    0.8  
    0.7  
    0.6  
    0.5  
    0.4  
    2.0  
    1.8  
    1.6  
    1.4  
    1.2  
    1.0  
    10  
    20  
    30  
    40  
    50  
    60  
    70  
    80  
    10  
    20  
    30  
    40  
    50  
    60  
    70  
    80  
    Figure 14. RMS Integrated Phase JitterRandom  
    (12 kHz to 20 MHz) vs Frequency[9]  
    Figure 15. RMS Integrated Phase Jitter Random  
    (900 kHz to 20 MHz) vs Frequency[9]  
    Notes:  
    8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.  
    9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz.  
    Rev 1.07  
    Page 6 of 18  
    www.sitime.com  
     
     
    SiT1602B Low Power, Standard Frequency Oscillator  
    High Output Load Capability  
    Programmable Drive Strength  
    The rise/fall time of the input clock varies as a function of  
    the actual capacitive load the clock drives. At any given  
    drive strength, the rise/fall time becomes slower as the  
    output load increases. As an example, for a 3.3 V SiT1602  
    device with default drive strength setting, the typical rise/fall  
    time is 1 ns for 15 pF output load. The typical rise/fall time  
    slows down to 2.6 ns when the output load increases to  
    45 pF. One can choose to speed up the rise/fall time to  
    1.83 ns by then increasing the drive strength setting on  
    the SiT1602.  
    The SiT1602 includes a programmable drive strength  
    feature to provide a simple, flexible tool to optimize the clock  
    rise/fall time for specific applications. Benefits from the  
    programmable drive strength feature are:  
    ◼
    ◼
    ◼
    Improves system radiated electromagnetic interference  
    (EMI) by slowing down the clock rise/fall time  
    Improves the downstream clock receiver’s (RX) jitter by  
    decreasing (speeding up) the clock rise/fall time.  
    Ability to drive large capacitive loads while maintaining  
    full swing with sharp edge rates.  
    The SiT1602 can support up to 60 pF or higher in  
    maximum capacitive loads with drive strength settings.  
    Refer to the Rise/Fall Time Tables (Table 7 to 11) to  
    determine the proper drive strength for the desired  
    combination of output load vs. rise/fall time.  
    For more detailed information about rise/fall time control  
    and drive strength selection, see the SiTime Application  
    Notes section.  
    EMI Reduction by Slowing Rise/Fall Time  
    SiT1602 Drive Strength Selection  
    Figure 16 shows the harmonic power reduction as the  
    rise/fall times are increased (slowed down). The rise/fall  
    times are expressed as a ratio of the clock period. For the  
    ratio of 0.05, the signal is very close to a square wave. For  
    the ratio of 0.45, the rise/fall times are very close to near-  
    triangular waveform. These results, for example, show that  
    the 11th clock harmonic can be reduced by 35 dB if the  
    rise/fall edge is increased from 5% of the period to 45% of  
    the period.  
    Tables 7 through 11 define the rise/fall time for a given  
    capacitive load and supply voltage.  
    1. Select the table that matches the SiT1602 nominal  
    supply voltage (1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V).  
    2. Select the capacitive load column that matches the  
    application requirement (5 pF to 60 pF)  
    3. Under the capacitive load column, select the desired  
    rise/fall times.  
    trise=0.05  
    trise=0.1  
    4. The left-most column represents the part number code  
    10  
    0
    trise=0.15  
    trise=0.2  
    trise=0.25  
    trise=0.3  
    trise=0.35  
    trise=0.4  
    trise=0.45  
    for the corresponding drive strength.  
    5. Add the drive strength code to the part number for  
    -10  
    -20  
    -30  
    -40  
    -50  
    -60  
    -70  
    -80  
    ordering purposes.  
    Calculating Maximum Frequency  
    Any given rise/fall time in Table 7 through 11 dictates the  
    maximum frequency under which the oscillator can operate  
    with guaranteed full output swing over the entire operating  
    temperature range. This max frequency can be calculated  
    as the following:  
    1
    3
    5
    7
    9
    11  
    Harmonic number  
    1
    Max Frequency =  
    Figure 16. Harmonic EMI reduction as a Function  
    of Slower Rise/Fall Time  
    5 x Trf_20/80  
    where Trf_20/80 is the typical value for 20%-80%  
    rise/fall time.  
    Jitter Reduction with Faster Rise/Fall Time  
    Power supply noise can be a source of jitter for the  
    downstream chipset. One way to reduce this jitter is to  
    speed up the rise/fall time of the input clock. Some chipsets  
    may also require faster rise/fall time in order to reduce their  
    sensitivity to this type of jitter. Refer to the Rise/Fall Time  
    Tables (Table 7 to Table 11) to determine the proper drive  
    strength.  
    Example 1  
    Calculate fMAX for the following condition:  
    ◼
    ◼
    ◼
    Vdd = 1.8 V (Table 7)  
    Capacitive Load: 30 pF  
    Desired Tr/f time = 3 ns (rise/fall time part number  
    code = E)  
    ◼
    fMAX = 66.666660  
    Part number for the above example:  
    SiT1602BIE12-18E-66.666660  
    Drive strength code is inserted here. Default setting is “-”  
    Rev 1.07  
    Page 7 of 18  
    www.sitime.com  
     
    SiT1602B Low Power, Standard Frequency Oscillator  
    Rise/Fall Time (20% to 80%) vs CLOAD Tables  
    Table 8. Vdd = 2.5 V (Vdd_2.5) Rise/Fall Times  
    for Specific CLOAD  
    Table 7. Vdd = 1.8 V (Vdd_1.8) Rise/Fall Times  
    for Specific CLOAD  
    Rise/Fall Time Typ (ns)  
    Rise/Fall Time Typ (ns)  
    Drive Strength \CLOAD  
    5pF  
    15 pF  
    30 pF  
    45 pF  
    60 pF  
    Drive Strength \CLOAD  
    5 pF  
    15 pF  
    30 pF  
    45 pF  
    60 pF  
    L
    A
    R
    B
    4.13  
    2.11  
    1.45  
    1.09  
    0.62  
    8.25  
    4.27  
    2.81  
    2.20  
    1.28  
    12.82  
    7.64  
    5.16  
    3.88  
    2.27  
    21.45  
    11.20  
    7.65  
    5.86  
    3.51  
    27.79  
    14.49  
    9.88  
    7.57  
    4.45  
    L
    A
    R
    B
    T
    E
    U
    6.16  
    3.19  
    2.11  
    1.65  
    0.93  
    0.78  
    0.70  
    0.65  
    11.61  
    6.35  
    4.31  
    3.23  
    1.91  
    1.66  
    1.48  
    1.30  
    22.00  
    11.00  
    7.65  
    5.79  
    3.32  
    2.94  
    2.64  
    2.40  
    31.27  
    16.01  
    10.77  
    8.18  
    4.66  
    4.09  
    39.91  
    21.52  
    14.47  
    11.08  
    6.48  
    T
    E or "‐": default  
    5.74  
    5.09  
    0.54  
    0.43  
    0.34  
    1.00  
    0.96  
    0.88  
    2.01  
    1.81  
    1.64  
    3.10  
    2.79  
    2.54  
    4.01  
    3.65  
    3.32  
    3.68  
    U
    F
    F or "‐": default  
    3.35  
    4.56  
    Table 9. Vdd = 2.8 V (Vdd_2.8) Rise/Fall Times  
    for Specific CLOAD  
    Table 10. Vdd = 3.0 V (Vdd_3.0) Rise/Fall Times  
    for Specific CLOAD  
    Rise/Fall Time Typ (ns)  
    Rise/Fall Time Typ (ns)  
    Drive Strength \ CLOAD  
    5 pF  
    3.60  
    1.84  
    1.22  
    0.89  
    0.51  
    0.38  
    0.30  
    0.27  
    15 pF  
    7.21  
    3.71  
    2.46  
    1.92  
    1.00  
    0.92  
    0.83  
    0.76  
    30 pF  
    11.97  
    6.72  
    4.54  
    3.39  
    1.97  
    1.72  
    1.55  
    1.39  
    45 pF  
    18.74  
    9.86  
    6.76  
    5.20  
    3.07  
    2.71  
    2.40  
    2.16  
    60 pF  
    24.30  
    12.68  
    8.62  
    6.64  
    3.90  
    3.51  
    3.13  
    2.85  
    Drive Strength \ CLOAD  
    5 pF  
    3.77  
    1.94  
    1.29  
    0.97  
    0.55  
    15 pF  
    7.54  
    3.90  
    2.57  
    2.00  
    1.12  
    30 pF  
    12.28  
    7.03  
    4.72  
    3.54  
    2.08  
    45 pF  
    19.57  
    10.24  
    7.01  
    5.43  
    3.22  
    60 pF  
    25.27  
    13.34  
    9.06  
    6.93  
    4.08  
    L
    A
    R
    B
    L
    A
    R
    B
    T
    T or "‐": default  
    E
    U
    F
    E or "‐": default  
    0.44  
    0.34  
    0.29  
    1.00  
    0.88  
    0.81  
    1.83  
    1.64  
    1.48  
    2.82  
    2.52  
    2.29  
    3.67  
    3.30  
    2.99  
    U
    F
    Table 11. Vdd = 3.3 V (Vdd_3.3) Rise/Fall Times  
    for Specific CLOAD  
    Rise/Fall Time Typ (ns)  
    Drive Strength \ CLOAD  
    5 pF  
    3.39  
    1.74  
    1.16  
    0.81  
    15 pF  
    6.88  
    3.50  
    2.33  
    1.82  
    30 pF  
    11.63  
    6.38  
    4.29  
    3.22  
    45 pF  
    17.56  
    8.98  
    6.04  
    4.52  
    60 pF  
    23.59  
    12.19  
    8.34  
    L
    A
    R
    B
    6.33  
    T or "‐": default  
    0.46  
    0.33  
    0.28  
    0.25  
    1.00  
    0.87  
    0.79  
    0.72  
    1.86  
    1.64  
    1.46  
    1.31  
    2.60  
    2.30  
    2.05  
    1.83  
    3.84  
    3.35  
    2.93  
    2.61  
    E
    U
    F
    Rev 1.07  
    Page 8 of 18  
    www.sitime.com  
     
     
    SiT1602B Low Power, Standard Frequency Oscillator  
    Pin 1 Configuration Options  
    (OE, S̅ T̅ ̅ , or NC)  
    Pin 1 of the SiT1602 can be factory-programmed to support  
    three modes: Output Enable (OE), standby (S ) or  
    ̅ T̅̅  
    No Connect (NC). These modes can also be programmed  
    with the Time Machine using field programmabledevices.  
    Output Enable (OE) Mode  
    In the OE mode, applying logic Low to the OE pin only  
    disables the output driver and puts it in Hi-Z mode. The  
    core of the device continues to operate normally. Power  
    consumption is reduced due to the inactivity of the output.  
    When the OE pin is pulled High, the output is typically  
    enabled in <1 µs.  
    Figure 17. Startup Waveform vs. Vdd  
    Standby (S̅ T̅ ̅ ) Mode  
    In the S̅ T̅̅ mode, a device enters into the standby mode  
    when Pin 1 pulled Low. All internal circuits of the device are  
    turned off. The current is reduced to a standby current,  
    typically in the range of a few µA. When S̅ T̅̅ is pulled High,  
    the device goes through the “resume” process, which can  
    take up to 5 ms.  
    No Connect (NC) Mode  
    In the NC mode, the device always operates in its normal  
    mode and outputs the specified frequency regardless of  
    the logic level on pin 1.  
    Figure 18. Startup Waveform vs. Vdd  
    (Zoomed-in View of Figure 17)  
    Instant Samples with Time Machine and  
    Field Programmable Oscillators  
    Table 12 below summarizes the key relevant parameters in  
    the operation of the device in OE, S̅ T̅̅ , or NCmode.  
    SiTime supports a field programmable version of the  
    SiT1602 low power oscillator for fast prototyping and real  
    time customization of features. The field programmable  
    devices (FP devices) are available for all five standard  
    SiT1602 package sizes and can be configured to one’s  
    exact specification using the Time Machine II, an USB  
    powered MEMS oscillator programmer.  
    Table 12. OE vs. S̅ T̅ ̅ vs. NC  
    OE  
    S
    ̅
    T
    ̅
    ̅
    NC  
    Active current 20 MHz  
    (max, 1.8 V)  
    4.1 mA  
    4 mA  
    N/A  
    4.1 mA  
    4.1 mA  
    OE disable current  
    (max. 1.8 V)  
    N/A  
    N/A  
    N/A  
    N/A  
    N/A  
    N/A  
    Standby current  
    (typical 1.8 V)  
    0.6 µA  
    N/A  
    Customizable Features of the SiT1602 FP Devices  
    Include  
    OE enable time at 77.76 MHz  
    (max)  
    138 ns  
    N/A  
    ◼
    ◼
    ◼
    ◼
    52 standard frequencies between 3.75 MHz and  
    77.76 MHz (Refer to the frequency list on page12)  
    Resume time from standby  
    (max, all frequency)  
    5 ms  
    Three frequency stability options, ±20 ppm, ±25 ppm,  
    ±50 ppm  
    Output driver in OE  
    High Z  
    weak  
    pull-down  
    disable/standby mode  
    Two operating temperatures, -20 to 70°C or  
    -40 to 85°C  
    Output on Startup and Resume  
    Six supply voltage options, 1.8 V, 2.5 V, 2.8 V, 3.0 V,  
    3.3 V, 2.25 to 3.65 V, and 1.62 to 3.63 V continuous  
    The SiT1602 comes with gated output. Its clock output is  
    accurate to the rated frequency stability within the first pulse  
    from initial device startup or resume from the standby mode.  
    ◼
    ◼
    Output drive strength  
    OE, ST or NC mode  
    In addition, the SiT1602 features “no runt” pulses and “no  
    glitch” output during startup or resume as shown in the  
    waveform captures in Figure 17 and Figure 18.  
    For more information regarding SiTime’s field programma-  
    ble solutions, see Time Machine II and Field Programmable  
    Oscillators.  
    SiT1602 is typically factory-programmed per customer or-  
    dering codes for volume delivery.  
    Rev 1.07  
    Page 9 of 18  
    www.sitime.com  
     
     
     
    SiT1602B Low Power, Standard Frequency Oscillator  
    Dimensions and Patterns  
    Package Size – Dimensions (Unit: mm)[10]  
    2.0 x 1.6 x 0.75 mm  
    Recommended Land Pattern (Unit: mm)[11]  
    1.5  
    0.9  
    2.5 x 2.0 x 0.75 mm  
    1.9  
    1.1  
    Rev 1.07  
    Page 10 of 18  
    www.sitime.com  
    SiT1602B Low Power, Standard Frequency Oscillator  
    Dimensions and Patterns (continued)  
    Package Size – Dimensions (Unit: mm)[10]  
    3.2 x 2.5 x 0.75 mm  
    Recommended Land Pattern (Unit: mm)[11]  
    2.2  
    1.4  
    5.0 x 3.2 x 0.75 mm  
    2.54  
    1.5  
    Rev 1.07  
    Page 11 of 18  
    www.sitime.com  
    SiT1602B Low Power, Standard Frequency Oscillator  
    Dimensions and Patterns (continued)  
    Package Size – Dimensions (Unit: mm)[10]  
    7.0 x 5.0 x 0.90 mm  
    Recommended Land Pattern (Unit: mm)[11]  
    5.08  
    2.2  
    Notes:  
    10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of  
    the device.  
    11. A capacitor of value 0.1 µF or higher between Vdd and GND is required.  
    Rev 1.07  
    Page 12 of 18  
    www.sitime.com  
     
    SiT1602B Low Power, Standard Frequency Oscillator  
    Ordering Information  
    The Part No. Guide is for reference only.  
    To customize and build an exact part number, use the SiTime Part Number Generator.  
    SiT1602BC-12-18E-66.666660D  
    Packaging  
    “D”: 8 mm Tape & Reel, 3 ku reel  
    Part Family  
    “T”: 12/16 mm Tape & Reel, 3 ku reel  
    “Y”: 12/16 mm Tape & Reel, 1 ku reel  
    “E”: 8 mm Tape & Reel, 1 ku reel  
    Blank for Bulk  
    “SiT1602”  
    Revision Letter  
    “B” is the revision  
    Frequency  
    Refer to frequency list below  
    Temperature Range  
    “C” Commercial, -20 to 70ºC  
    “I” Industrial, -40 to 85ºC  
    Feature Pin  
    “E” for OutputEnable  
    “S” forStandby  
    “N” for No Connect  
    Output Drive Strength  
    “–” Default (datasheet limits)  
    See Tables 7 to 11 for  
    rise/fall times  
    Supply Voltage  
    “18” for 1.8 V ±10%  
    “25” for 2.5 V ±10%  
    “28” for 2.8 V ±10%  
    “30” for 3.0 V ±10%  
    “33” for 3.3 V ±10%  
    “XX” for 2.25 V to 3.63 V  
    “YY” for 1.62 V to 3.63 V  
    “L”  
    “A”  
    “R”  
    “B”  
    “T”  
    “E”  
    “U”  
    “F”  
    Package Size  
    “7” 2.0 x 1.6 mm  
    “1” 2.5 x 2.0 mm  
    “2” 3.2 x 2.5 mm  
    “3” 5.0 x 3.2 mm  
    “8” 7.0 x 5.0 mm  
    Frequency Stability  
    “1” for ±20 ppm  
    “2” for ±25 ppm  
    “3” for ±50 ppm  
    Table 13. List of Supported Frequencies  
    3.57 MHz  
    4 MHz  
    4.096 MHz  
    20 MHz  
    6 MHz  
    7.3728 MHz  
    24.576 MHz  
    33 MHz  
    8.192 MHz  
    25 MHz  
    10 MHz  
    12 MHz  
    14 MHz  
    18.432 MHz  
    28.6363 MHz  
    19.2 MHz  
    30 MHz  
    24 MHz  
    32.768 MHz  
    38 MHz  
    65 MHz  
    25.000625 MHz 26 MHz  
    27 MHz  
    31.25 MHz  
    37.5 MHz  
    62.5 MHz  
    33.3 MHz  
    40 MHz  
    33.33 MHz  
    40.5 MHz  
    66.66 MHz  
    77.76 MHz  
    33.333 MHz  
    33.3333 MHz  
    50 MHz  
    33.33333 MHz 35.84 MHz  
    54 MHz 60 MHz  
    66.66666 MHz 72 MHz  
    38.4 MHz  
    66 MHz  
    48 MHz  
    66.6 MHz  
    75 MHz  
    66.666 MHz  
    66.6666 MHz  
    74.175824 MHz 74.176 MHz  
    74.25 MHz  
    Table 14. Ordering Codes for Supported Tape & Reel Packing Method  
    Device Size  
    16 mm T&R (3 ku)  
    16 mm T&R (1 ku)  
    12 mm T&R (3 ku)  
    12 mm T&R (1 ku)  
    8 mm T&R (3 ku)  
    8 mm T&R (1 ku)  
    (mm x mm)  
    2.0 x 1.6  
    2.5 x 2.0  
    3.2 x 2.5  
    5.0 x 3.2  
    7.0 x 5.0  
    –
    –
    –
    –
    T
    –
    –
    –
    –
    Y
    –
    –
    –
    T
    –
    –
    –
    –
    Y
    –
    D
    D
    D
    –
    E
    E
    E
    –
    –
    –
    Rev 1.07  
    Page 13 of 18  
    www.sitime.com  
     
    SiT1602B Low Power, Standard Frequency Oscillator  
    Table 15. Additional Information  
    Document  
    Time Machine II  
    Description  
    MEMS oscillator programmer  
    Download Link  
    http://www.sitime.com/support/time-machine-oscillator-programmer  
    http://www.sitime.com/products/field-programmable-oscillators  
    Field Programmable  
    Oscillators  
    Devices that can be programmable in the field by  
    Time Machine II  
    Manufacturing Notes  
    Qualification Reports  
    Performance Reports  
    Termination Techniques  
    Layout Techniques  
    Tape & Reel dimension, reflow profile and other  
    manufacturing related info  
    https://www.sitime.com/sites/default/files/gated/Manufacturing-Notes-  
    for-SiTime-Products.pdf  
    RoHS report, reliability reports,  
    composition reports  
    http://www.sitime.com/support/quality-and-reliability  
    http://www.sitime.com/support/performance-measurement-report  
    http://www.sitime.com/support/application-notes  
    Additional performance data such as phase noise,  
    current consumption and jitter for selected frequencies  
    Termination design  
    recommendations  
    Layout recommendations  
    http://www.sitime.com/support/application-notes  
    Table 16. Revision History  
    Revision  
    Release Date  
    Change Summary  
    0.9  
    1-Apr-2014  
    Preliminary  
    Removed preliminary  
    Updated max spec for current consumption and OE disable current  
    Updated the maximum operating junction temperature  
    Updated the current consumption and OE disable current in Table 12  
    Updated performance plots 8 and 10  
    1.0  
    14-May-2014  
    7-May-2015  
    Revised the formula for calculating the max frequency with different rise/fall time options  
    Added 20 MHz to the frequency selection  
    Revised the Electrical Characteristics, Timing Diagrams and Performance Plots  
    Revised 2016 PKG diagram  
    1.01  
    Added 16 mm T&R information to Table14  
    Revised 12 mm T&R information to Table14  
    1.02  
    1.03  
    1.04  
    18-Jun-2015  
    30-Aug-2016  
    9-Jan-2018  
    Revised part number example in the ordering information  
    Updated logo and company address, other page layout changes  
    Revised 2520 package land pattern  
    Updated ordering information with “YY” supply voltage option  
    Updated ordering information with note  
    1.05  
    1.06  
    1.07  
    8-Jul-2020  
    27-Jan-2021  
    10-Mar-2021  
    Removed Note 12  
    Added Rise/Fall Time, RMS Period Jitter, and RMS Phase Jitter specifications for “YY” supply voltage  
    Various formatting changes  
    Updated Dimensions and Patterns drawings  
    Updated hyperlinks, trademarks and changed rev table date format  
    SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439  
    © SiTime Corporation 2014-2021. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or  
    defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or  
    accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv)  
    improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.  
    Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by  
    operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or  
    usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by  
    SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved  
    or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.  
    CRITICAL USE EXCLUSION POLICY  
    BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR  
    FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.  
    SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products  
    does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to  
    the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be  
    strictly prohibited.  
    Rev 1.07  
    Page 14 of 18  
    www.sitime.com  
    Silicon MEMS Outperforms Quartz  
    Supplemental Information  
    The Supplemental Information section is not part of the datasheet and is for informational purposes only.  
    Rev 1.07  
    Page 15 of 18  
    www.sitime.com  
    Silicon MEMS Outperforms Quartz  
    Best Reliability  
    Best Electro Magnetic Susceptibility (EMS)  
    Silicon is inherently more reliable than quartz. Unlike quartz  
    suppliers, SiTime has in-house MEMS and analog CMOS  
    expertise, which allows SiTime to develop the most relia-  
    ble products. Figure 1 shows a comparison with quartz  
    technology.  
    SiTime’s oscillators in plastic packages are up to 54 times  
    more immune to external electromagnetic fields than quartz  
    oscillators as shown in Figure 3.  
    Why is SiTime Best in Class:  
    ◼
    Internal differential architecture for best common  
    mode noise rejection  
    Why is SiTime MEMS Best in Class:  
    ◼
    SiTime’s MEMS resonators are vacuum sealed using  
    an advanced EpiSeal™ process, which eliminates  
    foreign particles and improves long term aging and  
    reliability  
    ◼
    Electrostatically driven MEMS resonator is more im-  
    mune to EMS  
    ◼
    World-class MEMS and CMOS design expertise  
    Reliability (Million Hours)  
    SiTime  
    1,140  
    38  
    IDT  
    KYCA  
    EPSN  
    TXC  
    CW  
    SLAB  
    SiTime  
    28  
    EPSN  
    Figure 3. Electro Magnetic Susceptibility (EMS)[3]  
    Best Power Supply Noise Rejection  
    Figure 1. Reliability Comparison[1]  
    SiTime’s MEMS oscillators are more resilient against noise  
    on the power supply. A comparison is shown in Figure 4.  
    Best Aging  
    Why is SiTime Best in Class:  
    Unlike quartz, MEMS oscillators have excellent long  
    term aging performance which is why every new SiTime  
    product specifies 10-year aging. A comparison is shown  
    in Figure 2.  
    ◼
    On-chip regulators and internal differential architec-  
    ture for common mode noise rejection  
    ◼
    MEMS resonator is paired with advanced analog  
    CMOS IC  
    Why is SiTime Best in Class:  
    ◼
    SiTime’s MEMS resonators are vacuum sealed using  
    an advanced EpiSeal™ process, which eliminates  
    foreign particles and improves long term aging and  
    reliability  
    SiTime  
    EPSN  
    KYCA  
    ◼
    Inherently better immunity of electrostatically driven  
    MEMS resonator  
    MEMS vs. Quartz Aging  
    SiTime Oscillator  
    Quartz Oscillator  
    10  
    8
    8
    6
    Figure 4. Power Supply Noise Rejection[4]  
    4
    3.5  
    3
    2
    1.5  
    0
    1-Year  
    10-Year  
    Figure 2. Aging Comparison[2]  
    Rev 1.07  
    Page 16 of 18  
    www.sitime.com  
    Silicon MEMS Outperforms Quartz  
    Best Vibration Robustness  
    Best Shock Robustness  
    High-vibration environments are all around us. All  
    electronics, from handheld devices to enterprise servers  
    and storage systems are subject to vibration. Figure 5  
    shows a comparison of vibration robustness.  
    SiTime’s oscillators can withstand at least 50,000 g shock.  
    They all maintain their electrical performance in operation  
    during shock events. A comparison with quartz devices is  
    shown in Figure 6.  
    Why is SiTime Best in Class:  
    Why is SiTime Best in Class:  
    ◼
    The moving mass of SiTime’s MEMS resonators is  
    ◼
    The moving mass of SiTime’s MEMS resonators is  
    up to 3000 times smaller than quartz  
    up to 3000 times smaller than quartz  
    ◼
    Center-anchored MEMS resonator is the most robust  
    design  
    ◼
    Center-anchored MEMS resonator is the most robust  
    design  
    EP  
    E
    S
    KYC  
    K
    A
    SLA  
    B
    T
    T
    X
    C
    C
    C
    W
    SiTime  
    E
    100.0  
    10.0  
    1.0  
    0.1  
    0.0  
    10  
    100  
    Vibration Frequency (Hz)  
    1000  
    KYCA  
    EPSN  
    TXC  
    CW  
    SLAB  
    SiTime  
    Figure 6. Shock Robustness[6]  
    Figure 5. Vibration Robustness[5]  
    Figure labels:  
    ▪
    ▪
    ▪
    ▪
    ▪
    ▪
    TXC = TXC  
    Epson = EPSN  
    Connor Winfield = CW  
    Kyocera = KYCA  
    SiLabs = SLAB  
    SiTime = EpiSeal MEMS  
    Rev 1.07  
    Page 17 of 18  
    www.sitime.com  
    Silicon MEMS Outperforms Quartz  
    Notes:  
    1. Data source: Reliability documents of named companies.  
    2. Data source: SiTime and quartz oscillator devices datasheets.  
    3. Test conditions for Electro Magnetic Susceptibility (EMS):  
    ▪
    ▪
    ▪
    ▪
    ▪
    ▪
    According to IEC EN61000-4.3 (Electromagnetic compatibility standard)  
    Field strength: 3V/m  
    Radiated signal modulation: AM 1 kHz at 80% depth  
    Carrier frequency scan: 80 MHz – 1 GHz in 1% steps  
    Antenna polarization: Vertical  
    DUT position: Center aligned to antenna  
    Devices used in this test:  
    Label  
    Manufacturer  
    SiTime  
    Part Number  
    Technology  
    EpiSeal MEMS  
    EPSN  
    SiT9120AC-1D2-33E156.250000  
    EG-2102CA156.2500M-PHPAL3  
    BB-156.250MBE-T  
    MEMS + PLL  
    Epson  
    Quartz, SAW  
    TXC  
    TXC  
    Quartz, 3rd Overtone  
    Quartz, 3rd Overtone  
    Quartz, SAW  
    CW  
    Conner Winfield  
    AVX Kyocera  
    SiLab  
    P123-156.25M  
    KYCA  
    SLAB  
    KC7050T156.250P30E00  
    590AB-BDG  
    Quartz, 3rd Overtone + PLL  
    4. 50 mV pk-pk Sinusoidal voltage.  
    Devices used in this test:  
    Label  
    Manufacturer  
    SiTime  
    Part Number  
    Technology  
    MEMS + PLL  
    Quartz  
    EpiSeal MEMS  
    NDK  
    SiT8208AI-33-33E-25.000000  
    NZ2523SB-25.6M  
    NDK  
    KYCA  
    AVX Kyocera  
    Epson  
    KC2016B25M0C1GE00  
    SG-310SCF-25M0-MB3  
    Quartz  
    EPSN  
    Quartz  
    5. Devices used in this test:  
    same as EMS test stated in Note 3.  
    6. Test conditions for shock test:  
    ▪
    ▪
    ▪
    MIL-STD-883F Method 2002  
    Condition A: half sine wave shock pulse, 500-g, 1ms  
    Continuous frequency measurement in 100 μs gate time for 10 seconds  
    Devices used in this test:  
    same as EMS test stated in Note 3.  
    7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com.  
    Rev 1.07  
    Page 18 of 18  
    www.sitime.com  
    配单直通车
    SIT1602BIL11-33E-48.000000E产品参数
    型号:SIT1602BIL11-33E-48.000000E
    是否Rohs认证： 符合
    生命周期：Active
    Reach Compliance Code：compliant
    Factory Lead Time：8 weeks
    风险等级：5.71
    其他特性：ENABLE/DISABLE FUNCTION; HCMOS OUTPUT ALSO AVAILABLE; TR
    最长下降时间：2 ns
    频率调整-机械：NO
    频率稳定性：20%
    JESD-609代码：e4
    安装特点：SURFACE MOUNT
    标称工作频率：48 MHz
    最高工作温度：85 °C
    最低工作温度：-40 °C
    振荡器类型：LVCMOS
    输出负载：15 pF
    物理尺寸：2.5mm x 2.0mm x 0.75mm
    最长上升时间：2 ns
    最大供电电压：3.63 V
    最小供电电压：2.97 V
    标称供电电压：3.3 V
    表面贴装：YES
    最大对称度：55/45 %
    端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
    Base Number Matches：1
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