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产品型号SMCJ12A的概述

SMCJ12A芯片概述 SMCJ12A是一款用于过压保护和电压稳压的场效应晶体管保护组件，广泛应用于各种电子设备中。它属于SMC系列瞬态抑制二极管（TVS），其主要功能是吸收高能瞬态电压，对电电子设备的敏感器件提供保护。SMCJ12A能够有效地在电路中快速响应，确保设备在电压突变或电磁干扰情况下的正常工作。详细参数 SMCJ12A的主要电气参数如下： 1. 击穿电压：其典型击穿电压为12V，工作电压为10.8V至13.2V之间，适合电压范围广泛的应用。 2. 最大直流工作电压：可承受最大直流电压为10V。 3. 脉冲功率：其最大脉冲功率可以达到600W（相应的双脉冲波形），确保其在高能瞬态下的良好性能。 4. 反向击穿电流：在规范条件下，其反向测试电流不超过1mA。 5. 最大钉扎电压：确保设备在过电压状态下工作时的安全性与稳定性。 6. 封装形式：采用标准的DO-214AA（SMC...

产品型号SMCJ12A的Datasheet PDF文件预览

Transient Voltage Suppressors

SMCJ5V0(C)A - SMCJ170(C)A

Features

• Glass passivated junction.

• 1500 W Peak Pulse Power capability

on 10/1000 µs waveform.

• Excellent clamping capability.

• Low incremental surge resistance.

• Fast response time; typically less

than 1.0 ps from 0 volts to BV for

unidirectional and 5.0 ns for

bidirectional.

SMC/DO-214AB

COLOR BAND DENOTES CATHODE

ON UNIDIRECTIONAL DEVICES ONLY.

NO COLOR BAND ON BIDIRECTIONAL

DEVICES.

• Typical I_Rless than 1.0 µA above 10V.

• UL certified, UL #E210467.

DEVICES FOR BIPOLAR APPLICATIONS

- Bidirectional types use CA suffix.

- Electrical Characteristics apply in both directions.

1500 Watt Transient Voltage Suppressors

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

P_PPM

I_PPM

I_FSM

1500

Peak Pulse Power Dissipation on 10/1000 µs waveform

see table

Peak Pulse Current on 10/1000 µs waveform

Non-repetitive Peak Forward Surge Current

superimposed on rated load (JEDEC method) ^{(Note 1)}

Storage Temperature Range

200

-55 to +150

+ 150

°C

T_stg

T_J

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Note 1: Measured on 8.3 ms single half-sine wave or equivalent square wave; Duty cycle = 4 pulses per minute maximum.

SMCJ5V0(C)A-SMCJ170(C)A, Rev. H1

2003 Fairchild Semiconductor Corporation

Transient Voltage Suppressors

(continued)

Electrical Characteristics

T_A= 25°C unless otherwise noted

Uni-directional

Bi-directional (C)

Device

Part

Marking*

Reverse

Stand-off

Voltage

Breakdown

Voltage

V_BR(V)

Test

Current

I_T(mA)

Clamping

Voltage

@I_PPM

Peak Pulse Reverse

Current

I_PPM(A)

Leakage

@ V_RWM

V_RWM(V)

V_C(V)

_R(uA)**

min

6.40

max

7.0

SMCJ5V0(C)A

SMCJ6V0(C)A

SMCJ6V5(C)A

SMCJ7V0(C)A

SMCJ7V5(C)A

SMCJ8V0(C)A

SMCJ8V5(C)A

SMCJ9V0(C)A

SMCJ10(C)A

SMCJ11(C)A

SMCJ12(C)A

SMCJ13(C)A

SMCJ14(C)A

SMCJ15(C)A

SMCJ16(C)A

SMCJ17(C)A

SMCJ18(C)A

SMCJ20(C)A

SMCJ22(C)A

SMCJ24(C)A

SMCJ26(C)A

SMCJ28(C)A

SMCJ30(C)A

SMCJ33(C)A

SMCJ36(C)A

SMCJ40(C)A

SMCJ43(C)A

SMCJ45(C)A

SMCJ48(C)A

SMCJ51(C)A

SMCJ54(C)A

SMCJ58(C)A

SMCJ60(C)A

SMCJ64(C)A

SMCJ70(C)A

SMCJ75(C)A

SMCJ78(C)A

SMCJ85(C)A

SMCJ90(C)A

SMCJ100(C)A

SMCJ110(C)A

SMCJ120(C)A

SMCJ130(C)A

SMCJ150(C)A

SMCJ160(C)A

SMCJ170(C)A

GDE

GDG

GDK

GDM

GDP

GDR

GDT

GDV

GDX

GDZ

GEE

GEG

GEK

GEM

GEP

GER

GET

GEV

GEX

GEZ

GFE

GFG

GFK

GFM

GFP

GFR

GFT

GFV

GFX

GFZ

GGE

GGG

GGK

GGM

GGP

GGR

GGT

GGV

GGX

GGZ

GHE

GHG

GHK

GHM

GHP

GHR

5.0

6.0

6.5

7.0

7.5

8.0

8.5

9.0

9.2

10.3

11.2

12.0

12.9

13.6

14.4

15.4

17.0

18.2

19.9

21.5

23.2

24.4

26.0

27.6

29.2

32.4

35.5

38.9

42.1

45.4

48.4

53.3

58.1

64.5

69.4

72.7

77.4

82.4

87.1

93.6

96.8

103.0

113.0

121.0

126.0

137.0

146.0

162.0

177.0

193.0

209.0

243.0

259.0

275.0

163.0

145.6

133.9

125.0

116.3

110.3

104.2

97.4

88.2

82.4

75.3

69.8

64.7

61.5

57.7

54.3

51.4

46.3

42.3

38.6

35.6

33.0

31.0

28.1

25.8

23.3

21.6

20.6

19.4

18.2

17.2

16.0

15.5

14.6

13.3

12.4

11.9

10.9

10.3

9.3

1000

6.67

7.22

7.78

8.33

8.89

9.44

10.0

11.1

12.2

13.3

14.4

15.6

16.7

17.8

18.9

20.0

22.2

24.4

26.7

28.9

31.1

33.3

36.7

40.0

44.4

47.8

50.0

53.3

56.7

60.0

64.4

66.7

71.1

77.8

83.3

86.7

7.37

7.98

8.60

9.21

9.83

10.4

11.1

12.3

13.5

14.7

15.9

17.2

18.5

19.7

20.9

22.1

24.5

26.9

29.5

31.9

34.4

36.8

40.6

44.2

49.1

52.8

55.3

58.9

62.7

66.3

71.2

73.7

78.6

86.0

92.1

95.8

1000

500

200

100

94.4 104.0

100.0 111.0

111.0 123.0

122.0 135.0

133.0 147.0

144.0 159.0

167.0 185.0

178.0 197.0

189.0 209.0

100

110

120

130

150

160

170

8.5

7.8

7.2

6.2

5.8

5.5

* Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices.

** For bidirectional parts with V_RWM<10V, the I_Rmax limit is doubled.

SMCJ5V0(C)A-SMCJ170(C)A, Rev. H1

Transient Voltage Suppressors

(continued)

Typical Characteristics

Pulse Derating Curve

Peak Pulse Power Rating Curve

100

= 25ºC

0.1

100 125 150 175 200

0.0001

0.001

0.01

0.1

AMBIENT TEMPERATURE ( C)

PULSE WIDTH (ms)

Pulse Waveform

Junction Capacitance

150

100

20000

10000

= 25 C

T = 25 C

Pulse Width (td) is Defined

as the Point Where the Peak

Current Decays to 50% of Ipp

f = 1.0 MHz

tf = 10µsec

Visg = 50m Vp-p

Measured at

Zero Bias

Peak Value

Ippm

1000

100

Half Value-Ipp

Measured at

Stand-Off

Voltage (V mw)

10/1000µsec Waveform

as Defined by R.E.A.

e-kt

50 100 200 400

TIME (ms)

REVERSE VOLTAGE (V)

Non-Repetitive Surge Current

200

100

= T max

8.3ms Single Half Sine-Wave

JEDEC Method

100

NUMBER OF CYCLES AT 60Hz

SMCJ5V0(C)A-SMCJ170(C)A, Rev. H1

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

PACMAN™

POP™

SPM™

ImpliedDisconnect™

ISOPLANAR™

LittleFET™

FACT™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

Stealth™

FACT Quiet Series™

FAST

Power247™

PowerTrench

QFET

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

FASTr™

FRFET™

QS™

GlobalOptoisolator™

GTO™

EcoSPARK™

E²CMOS^TM

EnSigna^TM

QT Optoelectronics™ TinyLogic

Quiet Series™

RapidConfigure™

RapidConnect™

TruTranslation™

MSXPro™

HiSeC™

I²C™

UHC™

OCX™

UltraFET

OCXPro™

Across the board. Around the world.™

The Power Franchise™

SILENT SWITCHER VCX™

SMARTSTART™

OPTOLOGIC

OPTOPLANAR™

ProgrammableActive Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I3

SMCJ12A相关文章

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SMCJ12A产品参数

型号:	SMCJ12A
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	R-PDSO-C2
针数：	2
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
风险等级：	5.08
最大击穿电压：	14.7 V
最小击穿电压：	13.3 V
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3
最大非重复峰值反向功率耗散：	1500 W
元件数量：	1
端子数量：	2
最高工作温度：	175 °C
最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL
最大功率耗散：	2 W
认证状态：	Not Qualified
最大重复峰值反向电压：	12 V
子类别：	Transient Suppressors
表面贴装：	YES
技术：	AVALANCHE
端子面层：	Tin (Sn)
端子形式：	C BEND
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

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产品型号SMCJ12A的概述

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