SMK0990CI
Thermal Characteristics
Characteristic
Symbol
Rth(j-c)
Rating
Max. 0.96
Max. 40
Unit
Thermal resistance, junction to case
Thermal resistance, junction to ambient
C/W
Rth(j-a)
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Symbol
BVDSS
Test Condition
ID=250uA, VGS=0
Min.
Typ. Max.
Unit
V
900
3
-
-
-
-
VGS(th)
ID=250uA, VDS=VGS
VDS=900V, VGS=0V
VDS=720V, Tc=125C
VDS=0V, VGS=30V
VGS=10V, ID=4.5A
VDS=10V, ID=4.5A
5
V
-
1
uA
uA
nA
Drain-source cut-off current
IDSS
-
-
100
Gate leakage current
IGSS
RDS(ON)
gfs
-
-
100
Drain-source on-resistance
Forward transfer conductance (Note 4)
Input capacitance
-
1.12
9.2
2100
175
14
50
120
100
75
52
16
20
1.4
-
-
S
Ciss
Coss
Crss
td(on)
tr
-
-
VDS=25V, VGS=0V,
f=1.0MHz
Output capacitance
-
-
pF
ns
Reverse transfer capacitance
Turn-on delay time (Note 4,5)
Rise time (Note 4,5)
-
-
-
-
-
-
VDD=450V, ID=9A,
RG=25ꢀ
Turn-off delay time (Note 4,5)
Fall time (Note 4,5)
td(off)
tf
-
-
-
-
Total gate charge (Note 4,5)
Gate-source charge (Note 4,5)
Gate-drain charge (Note 4,5)
Qg
-
68
-
VDS=720V, VGS=10V,
ID=9A
Qgs
-
nC
Qgd
-
-
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Source current (DC)
Symbol
IS
Test Condition
Min.
Typ. Max.
Unit
A
-
-
-
-
-
-
-
9
36
1.4
-
Integral reverse diode
in the MOSFET
Source current (Pulsed)
Forward voltage
ISM
A
VSD
trr
VGS=0V, IS=9.5A
-
V
Reverse recovery time (Note 4,5)
Reverse recovery charge (Note 4,5)
Note:
550
6.5
ns
uC
IS=9A, VGS=0V
dIF/dt=100A/us
Qrr
-
1. Repeated rating: Pulse width limited by safe operating area
2. L=21mH, IAS=9A, VDD=50V, RG=25, Starting TJ=25C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Rev. date: 24-APR-12
KSD-T0V010-000
www.auk.co.kr
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