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产品型号SN74ACT7811的Datasheet PDF文件预览

SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
Member of the Texas Instruments  
Widebus Family  
Input-Ready, Output-Ready, and Half-Full  
Flags  
Independent Asynchronous Inputs and  
Outputs  
Cascadable in Word Width and/or Word  
Depth  
1024 Words × 18 Bits  
Fast Access Times of 15 ns With a 50-pF  
Load  
Read and Write Operations Can Be  
Synchronized to Independent System  
Clocks  
High-Output Drive for Direct Bus Interface  
Available in 68-Pin PLCC (FN) and  
Space-Saving 80-Pin Thin Quad Flat (PN)  
Packages  
Programmable Almost-Full/Almost-Empty  
Flag  
Pin-to-Pin Compatible With SN74ACT7881,  
SN74ACT7882, and SN74ACT7884  
FN PACKAGE  
(TOP VIEW)  
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61  
60  
D14  
D13  
D12  
D11  
D10  
D9  
10  
V
CC  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
59  
58  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
Q14  
Q13  
GND  
Q12  
Q11  
V
V
CC  
CC  
D8  
GND  
D7  
Q10  
Q9  
GND  
Q8  
D6  
D5  
Q7  
D4 22  
D3 23  
V
CC  
Q6  
24  
25  
26  
D2  
D1  
D0  
Q5  
GND  
Q4  
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Widebus is a trademark of Texas Instruments Incorporated.  
Copyright 1996, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
PN PACKAGE  
(TOP VIEW)  
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61  
V
1
2
3
4
60  
59  
58  
57  
56  
NC  
GND  
GND  
Q16  
CC  
V
CC  
NC  
Q3  
Q2  
5
6
Q17  
55  
54  
53  
GND  
V
CC  
7
8
9
OR  
GND  
Q1  
Q0  
V
CC  
52  
51  
50  
V
CC  
HF  
10  
11  
RESET  
OE  
IR  
49  
48  
47  
46  
RDEN2  
RDEN1  
RDCLK  
GND  
GND  
GND  
AF/AE  
12  
13  
14  
15  
16  
17  
18  
19  
V
CC  
D17  
45  
44  
WRTEN2  
WRTEN1  
D16  
43  
42  
41  
D15  
NC  
NC  
WRTCLK  
GND  
20  
NC  
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40  
NC – No internal connection  
description  
A FIFO memory is a storage device that allows data to be written into and read from its array at independent  
data rates. The SN74ACT7811 is a 1024 × 18-bit FIFO for high speed and fast access times. It processes data  
at rates up to 40 MHz and access times of 15 ns in a bit-parallel format. Data outputs are noninverting with  
respect to the data inputs. Expansion is easily accomplished in both word width and word depth.  
The SN74ACT7811 has normal input-bus-to-output-bus asynchronous operation. The special enable circuitry  
adds the ability to synchronize independent read and write (interrupts or requests) to their respective system  
clock.  
The SN74ACT7811 is characterized for operation from 0°C to 70°C.  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
logic symbol  
Φ
FIFO 1024 × 18  
SN74ACT7811  
1
RESET  
WRTCLK  
RESET  
WRTCLK  
WRTEN1  
WRTEN2  
RDCLK  
29  
30  
31  
5
35  
IN RDY  
IR  
&
36  
33  
66  
WRTEN  
HALF FULL  
ALMOST FULL/EMPTY  
OUT RDY  
HF  
AF/AE  
OR  
RDCLK  
4
RDEN1  
&
2
OE  
RDEN2  
DAF  
EN1  
RDEN  
3
27  
DEF ALMOST FULL  
26  
25  
24  
23  
22  
21  
20  
19  
17  
15  
14  
13  
12  
11  
10  
9
38  
39  
41  
42  
44  
46  
47  
49  
50  
52  
53  
55  
56  
58  
59  
61  
63  
64  
D0  
D1  
0
0
Q0  
Q1  
D2  
Q2  
D3  
Q3  
D4  
Q4  
D5  
Q5  
D6  
Q6  
D7  
Q7  
Data  
Data  
1
D8  
Q8  
D9  
Q9  
D10  
D11  
D12  
D13  
D14  
D15  
D16  
D17  
Q10  
Q11  
Q12  
Q13  
Q14  
Q15  
Q16  
Q17  
8
7
17  
17  
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.  
Pin numbers shown are for the FN package.  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
functional block diagram  
OE  
D0 – D17  
Location 1  
Location 2  
Synchronous  
RDCLK  
Read  
Read  
Pointer  
RDEN1  
RDEN2  
Control  
1024 × 18 RAM  
WRTCLK  
WRTEN1  
WRTEN2  
Synchronous  
Write  
Write  
Pointer  
Location 1023  
Location 1024  
Control  
Q0 – Q17  
Register  
Reset  
Logic  
RESET  
DAF  
Status-  
Flag  
Logic  
OR  
IR  
HF  
AF/AE  
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
Terminal Functions  
TERMINAL  
I/O  
DESCRIPTION  
NAME  
NO.  
Almost-full/almost-emptyflag. The AF/AE boundary isdefinedbythealmost-full/almost-emptyoffset  
value (X). This value can beprogrammedduringresetorthedefaultvalueof256canbeused. AF/AE  
is high when the FIFO contains (X + 1) or less words or (1025 – X) or more words. AF/AE is low when  
the FIFO contains between (X +2) and (1024 - X) words.  
Programming procedure for AF/AE – The almost-full/almost-empty flag is programmed during each  
reset cycle. The almost-full/almost-empty offset value (X) is either a user-defined value or the default  
of X = 256. Instructions to program AF/AE using both methods are as follows:  
User-defined X  
AF/AE  
33  
O
Step 1: Take DAF from high to low.  
Step 2: If RESET is not already low, take RESET low.  
Step 3: With DAF held low, take RESET high. This defines the AF/AE using X.  
Step 4: To retain the current offset for the next reset, keep DAF low.  
Default X  
To redefine AF/AE using the default value of X = 256, hold DAF high during the reset cycle.  
Define almost full. The high-to-low transition of DAF stores the binary value of data inputs as the  
almost-full/almost-empty offset value (X). With DAF held low, a low pulse on RESET defines the  
AF/AE flag using X.  
DAF  
27  
I
Data inputs for 18-bit-wide data to be stored in the memory. Data lines D0D8 also carry the  
almost-full/almost-empty offset value (X) on a high-to-low transition of the DAF.  
D0D17  
HF  
2619, 17, 15–7  
36  
I
Half-full flag. HF is high when the FIFO contains 513 or more words and is low when it contains 512  
or less words.  
O
Input-ready flag. IR is high when the FIFO is not full and low when the device is full. During reset, IR  
isdrivenlowontherisingedgeofthesecondWRTCLKpulse. IRisthendrivenhighontherisingedge  
of the second WRTCLK pulse after RESET goes high. After the FIFO is filled and IR is driven low,  
IR is driven high on the second WRTCLK pulse after the first valid read.  
IR  
35  
2
O
I
Output enable. The data-out (Q0Q17) outputs are in the high-impedance state when OE is low. OE  
must be high before the rising edge of RDCLK to read a word from memory.  
OE  
OR  
Output-ready flag. OR is high when the FIFO is not empty and low when it is empty. During reset,  
OR is set low on the rising edge of the third RDCLK pulse. OR is set high on the rising edge of the  
third RDCLK pulse to occur after the first word is written into the FIFO. OR is set low on the rising  
edge of the first RDCLK pulse after the last word is read.  
66  
O
3839, 4142, 44,  
4647, 4950,  
5253, 5556,  
Data outputs. The first data word to be loaded into the FIFO is moved to Q0Q17 on the rising edge  
of the third RDCLK pulse to occur after the first valid write. The RDEN1 and RDEN2 inputs do not  
affect this operation. Following data is unloaded on the rising edge of RDCLK when RDEN1, RDEN2,  
OE, and the OR are high.  
Q0Q17  
RDCLK  
O
5859, 61, 6364  
Read clock. Data is read out of memory on a low-to-high transition RDCLK if OR, OE, and RDEN1  
and RDEN2 control inputs are high. RDCLK is a free-running clock and functions as the  
synchronizing clock for all data transfers out of the FIFO. OR is also driven synchronously with  
respect to RDCLK.  
5
I
I
RDEN1,  
RDEN2  
4
3
Read enable. RDEN1 and RDEN2 must be high before a rising edge on RDCLK to read a word out  
of memory. RDEN1 and RDEN2 are not used to read the first word stored in memory.  
A reset is accomplished by taking RESET low and generating a minimum of four RDCLK and  
WRTCLK cycles. This ensures that the internal read and write pointers are reset and OR, HF, and  
IR are low and AF/AE is high. The FIFO must be reset upon power up. With DAF at a low level, a low  
pulse on RESET defines the AF/AE status flag using the almost-full/almost-empty offset value (X),  
where X is the value previously stored. With DAF at a high level, a low-level pulse on RESET defines  
the AF/AE flag using the default value of X = 256.  
RESET  
1
I
Terminals listed are for the FN package.  
5
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SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
Terminal Functions (Continued)  
TERMINAL  
I/O  
DESCRIPTION  
NAME  
NO.  
Write clock. Data is written into memory on a low-to-high transition of WRTCLK if IR, WRTEN1, and  
WRTEN2 are high. WRTCLK is a free-running clock and functions as the synchronizing clock for all  
data transfers into the FIFO. IR is also driven synchronously with respect to WRTCLK.  
WRTCLK  
29  
I
Write enables. WRTEN1 and WRTEN2 must be high before a rising edge on WRTCLK for a word  
to be written into memory. WRTEN1 and WRTEN2 do not affect the storage of the  
almost-full/almost-empty offset value (X).  
WRTEN1,  
WRTEN2  
30  
31  
I
Terminals listed are for the FN package.  
RESET  
DAF  
Don’t Care  
WRTCLK  
WRTEN1  
WRTEN2  
D0 – D17  
RDCLK  
RDEN1  
RDEN2  
OE  
1
2
3
4
1
2
Don’t Care  
Don’t Care  
Don’t Care  
X
1
2
3
4
Don’t Care  
Don’t Care  
1
0
Q0 – Q17  
Invalid  
Don’t Care  
OR  
AF/AE  
HF  
Don’t Care  
Don’t Care  
Don’t Care  
IR  
Define the AF/AE Flag Using the  
Value of X  
Store the Value of D0D8 as X  
X is the binary value of D0D8 only.  
Figure 1. Reset Cycle: Define AF/AE Using the Value of X  
6
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
RESET  
DAF  
Don’t Care  
1
WRTCLK  
WRTEN1  
WRTEN2  
D0 – D17  
RDCLK  
RDEN1  
RDEN2  
OE  
2
3
4
1
2
Don’t Care  
Don’t Care  
Don’t Care  
3 4  
1
2
Don’t Care  
Don’t Care  
1
0
Q0 – Q17  
OR  
Invalid  
Don’t Care  
Don’t Care  
Don’t Care  
AF/AE  
HF  
Don’t Care  
IR  
Define the AF/AE Flag  
Using the Value of X = 256  
Figure 2. Reset Cycle: Define AF/AE Using the Default Value  
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
1
0
RESET  
DAF  
Don’t Care  
WRTCLK  
WRTEN1  
WRTEN2  
1
0
W1  
W2  
W3  
W4  
W(X+2)  
W513  
W(1025–X)  
W1025  
D0D17  
RDCLK  
1
2
3
1
0
RDEN1  
RDEN2  
OE  
1
0
Invalid  
W1  
Q0Q17  
OR  
AF/AE  
HF  
IR  
Figure 3. Write Cycle  
8
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SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
1
0
RESET  
Don’t Care  
DAF  
WRTCLK  
2
1
WRTEN1  
WRTEN2  
W1025  
D0D17  
RDCLK  
RDEN1  
RDEN2  
OE  
W1  
W1  
W2  
W3  
W(X+1)  
W(X+2)  
W513  
W514 W(1024–X) W(1025–X) W1024  
W1025  
Q0Q17  
OR  
AF/AE  
HF  
IR  
Figure 4. Read Cycle  
9
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SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage range, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 7 V  
CC  
Input voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V  
I
Voltage applied to a disabled 3-state output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V  
Operating free-air temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C  
A
Storage temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C  
stg  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
recommended operating conditions  
MIN  
4.5  
2
MAX  
UNIT  
V
V
V
V
Supply voltage  
5.5  
CC  
High-level input voltage  
Low-level input voltage  
High-level output current  
Low-level output current  
Operating free-air temperature  
V
IH  
0.8  
–8  
16  
70  
V
IL  
I
I
mA  
mA  
°C  
OH  
OL  
T
A
0
electrical characteristics over recommended operating free-air temperature range (unless  
otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN TYP  
MAX  
UNIT  
V
V
V
V
V
V
V
= 4.5 V,  
= 4.5 V,  
= 5.5 V,  
= 5.5 V,  
I
I
= – 8 mA  
= 16 mA  
2.4  
OH  
CC  
CC  
CC  
CC  
OH  
0.5  
±5  
V
OL  
OL  
I
I
V =V  
or 0 V  
µA  
µA  
µA  
mA  
pF  
pF  
I
I
CC  
=V  
V
or 0 V  
±5  
OZ  
O
CC  
V =V  
– 0.2 V or 0 V  
400  
1
I
CC  
One input at 3.4 V,  
V = 0 V, f = 1 MHz  
§
I
CC  
Other inputs at V  
CC  
or GND  
C
C
4
8
i
I
V
O
= 0 V, f = 1 MHz  
o
§
All typical values are at V  
= 5 V, T = 25°C.  
A
CC  
tested with outputs open  
I
CC  
10  
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SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
timing requirements (see Figures 1 through 8)  
ACT7811-15  
MIN MAX  
ACT7811-18  
ACT7811-20  
ACT7811-25  
UNIT  
MIN  
35  
MAX  
MIN  
28.5  
14  
MAX  
MIN  
16.7  
20  
MAX  
f
Clock frequency  
40  
10  
7
MHz  
clock  
D0D17 high or low  
WRTCLK high  
WRTCLK low  
RDCLK high  
RDCLK low  
12  
8.5  
11  
10  
17  
10  
7
14  
23  
8.5  
11  
10  
17  
10  
10  
14  
23  
t
w
Pulse duration  
ns  
DAF high  
10  
10  
10  
WRTEN1, WRTEN2  
high or low  
10  
10  
10  
10  
OE, RDEN1, RDEN2  
high or low  
10  
5
10  
5
10  
5
10  
5
D0D17 before WRTCLK↑  
WRTEN1, WRTEN2 high  
before WRTCLK↑  
5
5
5
5
OE, RDEN1, RDEN2 high  
before RDCLK↑  
5
7
5
7
5
7
5
7
5
7
5
7
5
7
5
7
Reset: RESET low before first  
WRTCLK and RDCLK↑  
t
su  
Setup time  
ns  
Define AF/AE: D0D8 before  
DAF↓  
Define AF/AE: DAFbefore  
RESET↑  
Define AF/AE (default):  
DAF high before RESET↑  
5
1
1
5
1
1
5
1
1
5
1
1
D0D17 after WRTCLK↑  
WRTEN1, WRTEN2 high after  
WRTCLK↑  
OE, RDEN1, RDEN2 high after  
RDCLK↑  
1
0
1
0
1
1
0
1
0
1
1
0
1
0
1
1
0
1
0
1
Reset: RESET low after fourth  
WRTCLK and RDCLK↑  
t
h
Hold time  
ns  
Define AF/AE: D0D8 after  
DAF↓  
Define AF/AE: DAF low after  
RESET↑  
Define AF/AE (default):  
DAF high after RESET↑  
To permit the clock pulse to be utilized for reset purposes  
11  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
switching characteristics over recommended operating free-air temperature range (see Figures 9  
and 10)  
V
C
R
= 4.5 V to 5.5 V,  
= 50 pF,  
= 500 ,  
CC  
L
L
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
UNIT  
T
A
= 0°C to 70°C  
ACT7811-15  
ACT7811-18  
ACT7811-20  
ACT7811-25  
MIN  
TYP  
MAX  
MIN  
35  
4
MAX  
MIN  
28.5  
4
MAX  
MIN  
16.7  
4
MAX  
WRTCLK or  
RDCLK  
f
40  
4
MHz  
ns  
max  
t
t
t
t
12  
15  
18  
20  
25  
pd  
Any Q  
RDCLK↑  
10.5  
pd  
WRTCLK↑  
RDCLK↑  
IR  
2
2
6
6
6
6
3
4
2
2
10  
10  
20  
20  
19  
19  
19  
21  
11  
14  
2
2
6
6
6
6
3
4
2
2
12  
12  
22  
22  
21  
21  
21  
23  
11  
14  
2
2
6
6
6
6
3
4
2
2
14  
14  
24  
24  
23  
23  
23  
25  
11  
14  
2
2
6
6
6
6
3
4
2
2
16  
16  
26  
26  
25  
25  
25  
27  
11  
14  
ns  
ns  
pd  
pd  
OR  
WRTCLK↑  
RDCLK↑  
t
pd  
AF/AE  
HF  
ns  
ns  
ns  
ns  
t
t
t
t
t
t
WRTCLK↑  
RDCLK↑  
PLH  
PHL  
PLH  
PHL  
en  
AF/AE  
HF  
RESET↓  
OE  
Any Q  
dis  
This parameter is measured with C = 30 pF (see Figure 5).  
L
operating characteristics, V  
= 5 V, T = 25°C  
A
CC  
PARAMETER  
TEST CONDITIONS  
= 50 pF, f = 5 MHz  
TYP  
UNIT  
C
Power dissipation capacitance per 1K bits  
C
65  
pF  
pd  
L
12  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
TYPICAL CHARACTERISTICS  
Figure 2Figure 3Figure 4  
TYPICAL PROPAGATION DELAY TIME  
vs  
LOAD CAPACITANCE  
18  
17  
16  
15  
V
= 5 V  
= 25°C  
CC  
T
A
R
= 500 Ω  
L
14  
13  
12  
11  
10  
0
50  
100  
150  
200  
250  
300  
C
– Load Capacitance – pF  
L
Figure 5  
13  
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SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
TYPICAL CHARACTERISTICS  
TYPICAL POWER DISSIPATION CAPACITANCE  
vs  
SUPPLY VOLTAGE  
68  
f = 5 MHz  
i
T
= 25°C  
= 50 pF  
A
C
67  
66  
65  
64  
63  
62  
L
4.5 4.6 4.7 4.8 4.9  
5
5.1 5.2 5.3 5.4 5.5  
V
CC  
– Supply Voltage – V  
Figure 6  
calculating power dissipation  
The maximum power dissipation (P ) of the SN74ACT7811 can be calculated by:  
T
2
2
P = V  
× [I  
+ (N × I  
× dc)] + Σ (C × V  
× f ) + Σ (C × V  
× f )  
CC o  
T
CC  
CC  
CC  
pd  
CC  
i
L
where:  
I
N
I  
dc  
C
C
=
=
=
=
=
=
=
=
power-down I  
number of inputs driven by a TTL device  
increase in supply current  
duty cycle of inputs at a TTL high level of 3.4 V  
power dissipation capacitance  
output capacitive load  
maximum  
CC  
CC  
CC  
pd  
L
i
o
f
f
data input frequency  
data output frequency  
14  
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SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
APPLICATION INFORMATION  
expanding the SN74ACT7811  
The SN74ACT7811 is expandable in width and depth. Expanding in word depth offers special timing  
considerations:  
After the first data word is loaded into the FIFO, the word is unloaded and the output-ready flag (OR) output  
goes high after (N × 3) read-clock (RDCLK) cycles, where N is the number of devices used in depth  
expansion.  
After the FIFO is filled, the input-ready flag (IR) output goes low, the first word is unloaded, and the IR flag  
output is driven high after (N × 2) write-clock cycles, where N is the number of devices used in depth  
expansion.  
CLOCK  
SN74ACT7811  
WRTCLK  
SN74ACT7811  
WRTCLK  
WRTCLK  
WRTEN1  
WRTEN2  
IR  
RDCLK  
OR  
RDCLK  
RDEN1  
RDEN2  
OR  
RDCLK  
RDEN1  
RDEN2  
OR  
WRTEN1  
WRTEN2  
IR  
WRTEN1  
WRTEN2  
IR  
RDEN1  
RDEN2  
OE  
5 V  
OE  
OE  
Q0 – Q17  
D0 – D17  
D0 – D17  
D0 – D17  
Q0 – Q17  
Q0 – Q17  
Figure 7. Word-Depth Expansion: 2048 Words × 18 Bits, N = 2  
SN74ACT7811  
WRTCLK  
WRTCLK  
WRTEN1  
WRTEN2  
IR  
RDCLK  
RDEN1  
RDEN2  
OR  
RDCLK  
RDEN  
WRTEN  
OE  
OE  
D0 – D17  
Q0 – Q17  
D18 – D35  
IR  
Q18 – Q35  
OR  
SN74ACT7811  
WRTCLK  
WRTEN1  
WRTEN2  
IR  
RDCLK  
RDEN1  
RDEN2  
OR  
OE  
D0 – D17  
D0 – D17  
Q0 – Q17  
Q0 – Q17  
Figure 8. Word-Width Expansion: 1024 Words × 36 Bits  
15  
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SN74ACT7811  
1024 × 18  
CLOCKED FIRST-IN, FIRST-OUT MEMORY  
SCAS151C – JANUARY 1991 – REVISED FEBRUARY 1996  
PARAMETER MEASUREMENT INFORMATION  
3 V  
0 V  
Input  
1.5 V  
From Output  
Under Test  
t
pd  
t
pd  
R
= 500 Ω  
C = 50 pF  
L
L
3 V  
0 V  
1.5 V  
Output  
LOAD CIRCUIT  
TOTEM-POLE OUTPUTS  
Figure 9. Standard CMOS Outputs  
3 V  
7 V  
1.5 V  
1.5 V  
Input  
0 V  
R
= R1 = R2  
L
t
PZL  
S1  
t
PLZ  
R1  
3.5 V  
From Output  
Under Test  
Test  
Point  
1.5 V  
Output  
Output  
V
OL  
0.3 V  
C
R2  
t
L
PHZ  
t
PZH  
V
OH  
1.5 V  
0.3 V  
0 V  
LOAD CIRCUIT  
VOLTAGE WAVEFORMS  
S1  
C
L
PARAMETER R1, R2  
t
Open  
Closed  
Open  
PZH  
t
500 Ω  
50 pF  
en  
t
PZL  
PHZ  
t
t
500 Ω  
500 Ω  
50 pF  
50 pF  
dis  
t
Closed  
Open  
PLZ  
t
pd  
Includes probe and test fixture capacitanceFigure 9  
Figure 10. 3-State Outputs (Any Q)  
16  
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IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
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配单直通车
SN74ACT7811-15FN产品参数
型号:SN74ACT7811-15FN
是否无铅: 不含铅
生命周期:Active
零件包装代码:LCC
包装说明:PLASTIC, LCC-68
针数:68
Reach Compliance Code:unknown
风险等级:5.75
最长访问时间:15 ns
周期时间:25 ns
JESD-30 代码:S-PQCC-J68
长度:24.2316 mm
内存密度:18432 bit
内存宽度:18
湿度敏感等级:3
功能数量:1
端子数量:68
字数:1024 words
字数代码:1000
工作模式:SYNCHRONOUS
最高工作温度:70 °C
最低工作温度:
组织:1KX18
可输出:YES
封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ
封装形状:SQUARE
封装形式:CHIP CARRIER
并行/串行:PARALLEL
峰值回流温度(摄氏度):220
认证状态:COMMERCIAL
座面最大高度:4.57 mm
最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V
表面贴装:YES
技术:CMOS
温度等级:COMMERCIAL
端子面层:NOT SPECIFIED
端子形式:J BEND
端子节距:1.27 mm
端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:24.2316 mm
Base Number Matches:1
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