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产品型号SPB100N08S2L-07的Datasheet PDF文件预览

SPP100N08S2L-07  
SPB100N08S2L-07  
OptiMOS Power-Transistor  
Product Summary  
Feature  
V
75  
6.5  
V
DS  
N-Channel  
R
max. SMD version  
mΩ  
A
DS(on)  
Enhancement mode  
Logic Level  
I
100  
D
P- TO263 -3-2  
P- TO220 -3-1  
175°C operating temperature  
Avalanche rated  
dv/dt rated  
Type  
Package  
Ordering Code  
Marking  
PN08L07  
PN08L07  
SPP100N08S2L-07 P- TO220 -3-1 Q67060-S6045  
SPB100N08S2L-07 P- TO263 -3-2 Q67060-S6047  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
1)  
A
Continuous drain current  
I
D
T =25°C  
100  
100  
400  
C
Pulsed drain current  
I
D puls  
T =25°C  
C
810  
mJ  
Avalanche energy, single pulse  
E
AS  
I =80A, V =25V, R =25Ω  
D
DD  
GS  
2)  
E
30  
6
Repetitive avalanche energy, limited by T  
Reverse diode dv/dt  
AR  
jmax  
dv/dt  
kV/µs  
I =100A, V =60V, di/dt=200A/µs, T =175°C  
jmax  
S
DS  
Gate source voltage  
Power dissipation  
V
V
±20  
300  
GS  
P
W
tot  
T =25°C  
C
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55... +175  
55/175/56  
j
stg  
Page 1  
2003-05-09  
SPP100N08S2L-07  
SPB100N08S2L-07  
Thermal Characteristics  
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
Characteristics  
R
-
-
0.3  
-
0.5 K/W  
62  
Thermal resistance, junction - case  
Thermal resistance, junction - ambient, leaded  
SMD version, device on PCB:  
@ min. footprint  
thJC  
R
thJA  
R
thJA  
-
-
-
-
62  
40  
2
3)  
@ 6 cm cooling area  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
Unit  
min.  
75  
typ. max.  
Static Characteristics  
V
-
-
V
Drain-source breakdown voltage  
(BR)DSS  
V
=0V, I =1mA  
GS  
D
1.2  
1.6  
2
Gate threshold voltage, V = V  
V
GS(th)  
GS  
DS  
I
=250µA  
D
µA  
Zero gate voltage drain current  
I
DSS  
V
V
=75V, V =0V, T =25°C  
GS  
-
-
0.01  
1
1
DS  
j
=75V, V =0V, T =125°C  
DS GS  
100  
j
-
1
100 nA  
Gate-source leakage current  
I
GSS  
V
=20V, V =0V  
GS DS  
Drain-source on-state resistance  
R
mΩ  
DS(on)  
DS(on)  
V
V
=4.5V, I =68A  
GS  
-
-
6.4  
6.1  
8.7  
8.4  
D
=4.5V, I =68A, SMD version  
GS  
D
Drain-source on-state resistance  
R
V
V
=10V, I =68A  
GS  
-
-
5.2  
4.9  
6.8  
6.5  
D
=10V, I =68A, SMD version  
GS  
D
1
Current limited by bondwire ; with an R  
= 0.5K/W the chip is able to carry I = 138A at 25°C, for detailed  
D
thJC  
information see app.-note ANPS071E available at www.infineon.com/optimos  
2
Defined by design. Not subject to production test.  
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical without blown air.  
Page 2  
2003-05-09  
SPP100N08S2L-07  
SPB100N08S2L-07  
Electrical Characteristics  
Parameter  
Symbol  
Conditions  
Values  
Unit  
min. typ. max.  
Dynamic Characteristics  
Transconductance  
g
V
2*I *R ,  
DS(on)max  
77  
154  
-
S
fs  
DS  
D
I =100A  
D
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C
V
=0V, V =25V,  
-
-
-
-
-
-
-
5360 7130 pF  
1080 1440  
iss  
GS  
DS  
C
C
f=1MHz  
oss  
rss  
400  
17  
600  
26 ns  
62  
t
V
=40V, V =10V,  
d(on)  
DD GS  
I =100A,  
t
r
41  
D
R =1.1Ω  
G
Turn-off delay time  
Fall time  
t
111  
40  
165  
60  
d(off)  
t
f
Gate Charge Characteristics  
Gate to source charge  
Gate to drain charge  
Q
V
=60V, I =100A  
-
-
-
19  
83  
25 nC  
124  
gs  
DD  
D
Q
gd  
V
DD  
=60V, I =100A,  
185  
246  
Gate charge total  
Q
g
D
V
=0 to 10V  
GS  
V
=60V, I =100A  
-
-
3.1  
-
-
V
Gate plateau voltage  
V
I
DD  
D
(plateau)  
Reverse Diode  
T =25°C  
100 A  
400  
Inverse diode continuous  
forward current  
C
S
I
-
-
-
-
-
Inv. diode direct current, pulsed  
Inverse diode forward voltage  
Reverse recovery time  
SM  
V
=0V, I =80A  
0.9  
95  
1.3  
V
V
GS  
F
SD  
t
rr  
V =40V, I =l ,  
R
120 ns  
300 nC  
F S  
di /dt=100A/µs  
Reverse recovery charge  
Q
238  
F
rr  
Page 3  
2003-05-09  
SPP100N08S2L-07  
SPB100N08S2L-07  
1 Power dissipation  
= f (T )  
2 Drain current  
I = f (T )  
P
tot  
D
C
C
parameter: V 4 V  
parameter: V 10 V  
GS  
SPP100N08S2L-07  
GS  
SPP100N08S2L-07  
320  
110  
A
W
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
240  
200  
160  
120  
80  
40  
0
°C  
0
20 40 60 80 100 120 140 160  
190  
0
20 40 60 80 100 120 140 160 °C 190  
T
T
C
C
3 Safe operating area  
4 Max. transient thermal impedance  
Z = f (t )  
thJC  
I = f ( V  
)
D
DS  
p
parameter : D = 0 , T = 25 °C  
parameter : D = t /T  
p
C
3 SPP100N08S2L-07  
SPP100N08S2L-07  
1
10  
10  
K/W  
t
= 15.0µs  
p
A
0
10  
10  
10  
10  
10  
10  
2
-1  
-2  
-3  
-4  
-5  
10  
100 µs  
D = 0.50  
0.20  
1 ms  
1
10  
0.10  
0.05  
0.02  
single pulse  
0.01  
0
10  
10 -1  
10 0  
10 1  
10 2  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
V
s
t
V
p
DS  
Page 4  
2003-05-09  
SPP100N08S2L-07  
SPB100N08S2L-07  
5 Typ. output characteristic  
I = f (V ); T =25°C  
6 Typ. drain-source on resistance  
= f (I )  
R
D
DS(on)  
D
DS  
j
parameter: t = 80 µs  
parameter: V  
GS  
p
SPP100N08S2L-07  
SPP100N08S2L-07  
240  
24  
Ptot = 300W  
A
i
V
[V]  
h
d
e
f
g
GS  
200  
180  
160  
140  
120  
100  
80  
20  
18  
16  
14  
12  
10  
8
a
b
c
d
e
f
2.8  
3.0  
3.2  
3.5  
3.8  
4.0  
4.2  
4.5  
10.0  
g
f
g
h
i
e
h
d
b
60  
6
i
40  
4
c
a
V
[V] =  
e
3.5 3.8 4.0  
GS  
d
f
g
h
i
20  
2
4.2 4.5 10.0  
0
0
V
A
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
5
0
40  
80  
120  
160  
240  
I
V
DS  
D
7 Typ. transfer characteristics  
8 Typ. forward transconductance  
I = f ( V ); V 2 x I x R  
g = f(I ); T =25°C  
D
GS  
DS  
D
DS(on)max  
D
fs  
j
parameter: t = 80 µs  
parameter: g  
p
fs  
200  
180  
A
S
160  
140  
120  
100  
80  
140  
120  
100  
80  
60  
60  
40  
40  
20  
20  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
V
V
4.5  
GS  
0
20 40 60 80 100 120 140  
A
180  
I
D
Page 5  
2003-05-09  
SPP100N08S2L-07  
SPB100N08S2L-07  
9 Drain-source on-state resistance  
= f (T )  
10 Typ. gate threshold voltage  
V = f (T )  
GS(th)  
R
DS(on)  
j
j
parameter : I = 68 A, V = 10 V  
parameter: V = V  
DS  
D
GS  
GS  
SPP100N08S2L-07  
2.5  
28  
24  
22  
20  
18  
16  
14  
12  
10  
8
V
1.35 mA  
1.5  
270 µA  
1
0.5  
0
98%  
6
typ  
4
2
0
-60  
°C  
-20  
20  
60  
100  
140  
200  
-60  
-20  
20  
60  
100  
°C  
180  
T
T
j
j
11 Typ. capacitances  
12 Forward character. of reverse diode  
I = f (V )  
C = f (V )  
F
SD  
DS  
parameter: V =0V, f=1 MHz  
parameter: T , tp = 80 µs  
GS  
j
5
3 SPP100N08S2L-07  
10  
10  
pF  
A
4
2
10  
10  
C
iss  
C
C
oss  
3
1
10  
10  
Tj = 25 °C typ  
rss  
Tj = 175 °C typ  
Tj = 25 °C (98%)  
Tj = 175 °C (98%)  
2
0
10  
10  
V
0
5
10  
15  
20  
V
30  
DS  
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
3
V
V
SD  
Page 6  
2003-05-09  
SPP100N08S2L-07  
SPB100N08S2L-07  
13 Typ. avalanche energy  
= f (T )  
14 Typ. gate charge  
= f (Q  
E
V
)
Gate  
AS  
j
GS  
par.: I = 80 A, V = 25 V, R = 25 Ω  
parameter: I = 100 A pulsed  
D
D
DD  
GS  
SPP100N08S2L-07  
850  
16  
mJ  
V
700  
600  
500  
400  
300  
200  
100  
0
12  
10  
0,2 VDS max  
0,8 VDS max  
8
6
4
2
0
25  
45  
65  
85  
105 125 145 °C 185  
0
40  
80  
120  
160  
200  
280  
Gate  
nC  
T
Q
j
15 Drain-source breakdown voltage  
= f (T )  
V
(BR)DSS  
j
parameter: I =10 mA  
D
SPP100N08S2L-07  
92  
V
88  
86  
84  
82  
80  
78  
76  
74  
72  
70  
68  
°C  
-60  
-20  
20  
60  
100  
140  
200  
T
j
Page 7  
2003-05-09  
SPP100N08S2L-07  
SPB100N08S2L-07  
Published by  
Infineon Technologies AG,  
Bereichs Kommunikation  
St.-Martin-Strasse 53,  
D-81541 München  
© Infineon Technologies AG 1999  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as warranted  
characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,  
regarding circuits, descriptions and charts stated herein.  
Infineon Technologies is an approved CECC manufacturer.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express  
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to  
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device  
or system Life support devices or systems are intended to be implanted in the human body, or to support  
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health  
of the user or other persons may be endangered.  
Further information  
Please notice that the part number is BSPP100N08S2L-07 and BSPB100N08S2L-07, for simplicity the device is referred  
to by the term SPP100N08S2L-07 and SPB100N08S2L-07 throughout this documentation.  
Page 8  
2003-05-09  
配单直通车
SPB100N08S2L-07产品参数
型号:SPB100N08S2L-07
生命周期:Obsolete
IHS 制造商:INFINEON TECHNOLOGIES AG
零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4
Reach Compliance Code:unknown
ECCN代码:EAR99
风险等级:5.84
其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):810 mJ
外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):100 A
最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0084 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2
JESD-609代码:e3
元件数量:1
端子数量:2
工作模式:ENHANCEMENT MODE
最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):400 A
认证状态:Not Qualified
子类别:FET General Purpose Power
表面贴装:YES
端子面层:MATTE TIN
端子形式:GULL WING
端子位置:SINGLE
晶体管应用:SWITCHING
晶体管元件材料:SILICON
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