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SPP2305D

P-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

z

Power Management in Note book

The SPP2305D is the P-Channel logic enhancement

mode power field effect transistors are produced using

high cell density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery powered

circuits, and low in-line power loss are needed in a very

small outline surface mount package.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION(SOT-23)

-15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V

-15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V

-15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V

Super high density cell design for extremely low

R^{DS (ON)}

Exceptional on-resistance and maximum DC

current capability

SOT-23 package design

PART MARKING

S05YW

2011/01/03 Ver.1

Page 1

SPP2305D

P-Channel Enhancement Mode MOSFET

PIN DESCRIPTION

Symbol

Description

Gate

1

2

3

G

S

Source

Drain

D

ORDERING INFORMATION

Part Number

Package

Part Marking

SPP2305DS23RG

SOT-23

S05YW

※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )

※ SPP2305DS23RG : Tape Reel ; Pb – Free

ABSOULTE MAXIMUM RATINGS

(T^A=25℃ Unless otherwise noted)

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

-15

V

Gate –Source Voltage

VGSS

±12

V

A

TA=25℃

T^A=70℃

-3.5

-2.8

Continuous Drain Current(TJ=150℃)

I^D

Pulsed Drain Current

IDM

IS

-10

A

Continuous Source Current(Diode Conduction)

-1.6

TA=25℃

T^A=70℃

1.25

0.8

Power Dissipation

P^D

W

Operating Junction Temperature

TJ

150

℃

Storage Temperature Range

TSTG

-55/150

120

℃

Thermal Resistance-Junction to Ambient

RθJA

℃/W

2011/01/03 Ver.1

Page 2

SPP2305D

P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(T^A=25℃ Unless otherwise noted)

Parameter

Static

Symbol

Conditions

Min.

Typ

Max. Unit

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V(BR)DSS VGS=0V,ID=-250uA

VGS(th) VDS=VGS,ID=-250uA

-15

V

-0.35

-0.85

Gate Leakage Current

IGSS

VDS=0V,VGS=±10V

VDS=-12V,VGS=0V

V^DS=-12V,VGS=0V

T^J=55℃

±100

-1

nA

uA

Zero Gate Voltage Drain Current

On-State Drain Current

IDSS

-10

VDS≦-5V,VGS=-4.5V

-4

-2

ID(on)

A

V^DS≦-5V,VGS=-2.5V

VGS=-4.5V,ID=-3.5A

VGS=-2.5V,ID=-3.0A

VGS=-1.8V,ID=-2.0A

0.060

0.072

0.090

0.70

0.85

0.105

Ω

Drain-Source On-Resistance

RDS(on)

Forward Transconductance

Diode Forward Voltage

gfs

VDS=-5V,ID=-3.5A

IS=-1.5A,VGS=0V

8.5

S

VSD

-0.8

-1.2

8

V

Dynamic

Total Gate Charge

Qg

Qgs

4.8

1.0

485

85

V^DS=-6V,VGS=-4.5V

I^D≡-2.8A

nC

pF

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Qgd

Ciss

Coss

Crss

td(on)

V^DS=-6V,VGS=0V

f=1MHz

Output Capacitance

Reverse Transfer Capacitance

40

10

16

23

25

20

Turn-On Time

Turn-Off Time

V^DD=-6V,RL=6Ω

I^D≡-1.0A,VGEN=-4.5V

R^G=6Ω

t^r

td(off)

t^f

13

18

15

ns

2011/01/03 Ver.1

Page 3

SPP2305D

P-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

2011/01/03 Ver.1

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SPP2305D

P-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

2011/01/03 Ver.1

Page 5

SPP2305D

P-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

2011/01/03 Ver.1

Page 6

SPP2305D

P-Channel Enhancement Mode MOSFET

SOT-23 PACKAGE OUTLINE

2011/01/03 Ver.1

Page 7

SPP2305D

P-Channel Enhancement Mode MOSFET

Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the

penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.

No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions

mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information

previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support

devices or systems without express written approval of SYNC Power Corporation.

SYNC Power Corporation

7F-2, No.3-1, Park Street

NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C

Phone: 886-2-2655-8178

Fax: 886-2-2655-8468

2011/01/03 Ver.1

Page 8

型号:	SPP2305DS23RG
生命周期：	Contact Manufacturer
IHS 制造商：	SYNC POWER CORP
包装说明：	,
Reach Compliance Code：	compliant
风险等级：	5.61
Is Samacsys：	N
Base Number Matches：	1

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