SS8P3CL-M3/86A全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

New Product

SS8P2CL & SS8P3CL

Vishay General Semiconductor

High Current Density Surface Mount

Schottky Barrier Rectifiers

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP^TMSeries

• Ideal for automated placement

• Low forward voltage drop, low power

losses

K

• High efficiency

1

• Low thermal resistance

• Meets MSL level 1, per J-STD-020

• Solder dip 260 °C, 40 s

2

TO-277A (SMPC)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Anode 1

K

Cathode

Anode 2

• Halogen-free

MECHANICAL DATA

Case: TO-277A (SMPC)

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 4.0 A

Molding compound meets UL 94V-0 flammability

rating.

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC-Q101 qualified)

V_RRM

20 V, 30 V

120 A

I_FSM

E_AS

20 mJ

V_Fat I_F= 4 A

T_Jmax.

0.41 V

150 °C

Base P/N-M3 - halogen-free and RoHS compliant,

commercial grade

Base P/NHM3 - halogen-free and RoHS compliant,

high reliability/automotive grade (AEC-Q101 qualified)

TYPICAL APPLICATIONS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 and M3 suffix meets JESD 201 class 1A whisker

test, HE3 and HM3 suffix meets JESD 201 class 2

whisker test

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters, and polarity

protection applications.

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

A

PARAMETER

SYMBOL

SS8P2CL

S82CL

20

SS8P3CL

S83CL

30

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

I_F(AV)

V

A

total device

Maximum average forward rectified current (Fig. 1)

per diode

8.0

4.0

Peak forward surge current 10 ms single half sine-wave superimposed

on rated load per diode

I_FSM

120

20

A

Non-repetitive avalanche energy at 25 °C, I_AS= 2 A per diode

Operating junction and storage temperature range

E_AS

_J,T_STG

mJ

°C

T

- 55 to + 150

Document Number: 89030

Revision: 30-Jul-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

New Product

SS8P2CL & SS8P3CL

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

A

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

I_F= 2.0 A

I_F= 4.0 A

0.42

0.50

-

T_A= 25 °C

0.54

Instantaneous forward voltage per diode ⁽¹⁾

V_F

V

I_F= 2.0 A

I_F= 4.0 A

0.32

0.41

-

T_A= 125 °C

0.45

T_A= 25 °C

_A= 125 °C

48

19

300

30

µA

mA

Reverse current per diode ⁽²⁾

rated V_R

I_R

T

Typical junction capacitance per diode

4.0 V, 1 MHz

C_J

250

-

pF

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≤ 40 ms

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

A

PARAMETER

SYMBOL

SS8P2CL

SS8P3CL

UNIT

(1)

R_θJA

R_θJL

60

3

Typical thermal resistance per diode

°C/W

Note:

(1) Units mounted on recommended P.C.B. 1 oz. pad layout

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE BASE QUANTITY

DELIVERY MODE

SS8P3CL-E3/86A

0.10

86A

87A

86A

87A

86A

87A

86A

87A

1500

6500

1500

6500

1500

6500

1500

6500

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

SS8P3CL-E3/87A

SS8P3CLHE3/86A ⁽¹⁾

SS8P3CLHE3/87A ⁽¹⁾

SS8P3CL-M3/86A

SS8P3CL-M3/87A

SS8P3CLHM3/86A ⁽¹⁾

SS8P3CLHM3/87A ⁽¹⁾

Note:

(1) High reliability/automotive grade (AEC-Q101 qualified)

www.vishay.com

2

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 89030

Revision: 30-Jul-08

New Product

SS8P2CL & SS8P3CL

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

A

10

100

10

T_A= 150 °C

Resistive or Inductive Load

8

T_A= 125 °C

6

4

1

0.1

T_A= 25 °C

T_Lmeasured

at the Cathode Band Terminal

2

0.01

0.001

0

25

50

75

100

125

150

175

10

20

30

40

50

60

70

80

90 100

Lead Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Figure 1. Maximum Forward Current Derating Curve

Figure 4. Typical Reverse Leakage Characteristics Per Diode

2.4

1000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mVp-p

D = 0.8

D = 0.5

D = 0.3

2.0

D = 0.2

D = 0.1

1.6

1.2

0.8

D = 1.0

T

0.4

0

D = t_p/T

t_p

100

0

1

2

3

4

5

0.1

1

10

100

Average Forward Current (A)

Reverse Voltage (V)

Figure 2. Forward Power Loss Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

100

T_A= 150 °C

10

T_A= 125 °C

1

10

T

_A= 25 °C

0.1

Junction to Ambient

0.01

1

0.01

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.1

1

10

100

Instantaneous Forward Voltage (V)

t - Pulse Duration (s)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

Document Number: 89030

Revision: 30-Jul-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

3

New Product

SS8P2CL & SS8P3CL

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-277A (SMPC)

0.187 (4.75)

0.175 (4.45)

0.016 (0.40)

0.006 (0.15)

K

0.262 (6.65)

0.250 (6.35)

0.242 (6.15)

0.238 (6.05)

0.026 (0.65) NOM.

2

1

0.047 (1.20)

0.039 (1.00)

0.171 (4.35)

0.167 (4.25)

0.146 (3.70)

0.134 (3.40)

Mounting Pad Layout

0.189

MIN.

0.087 (2.20)

0.075 (1.90)

(4.80)

0.189 (4.80)

0.173 (4.40)

0.186

(4.72)

MIN.

0.268

(6.80)

0.155 (3.94)

NOM.

0.030 (0.75) NOM.

0.049 (1.24)

0.037 (0.94)

0.050

(1.27)

MIN.

0.084 (2.13) NOM.

0.053 (1.35)

0.041 (1.05)

0.041

(1.04)

0.055

(1.40)

MIN.

Conform to JEDEC TO-277A

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For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 89030

Revision: 30-Jul-08

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

1

型号:	SS8P3CL-M3/86A
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	VISHAY SEMICONDUCTORS
零件包装代码：	TO-277
包装说明：	R-PDSO-F3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.13
其他特性：	FREEWHEELING DIODE, LOW POWER LOSS
应用：	EFFICIENCY
外壳连接：	CATHODE
配置：	COMMON CATHODE, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.45 V
JEDEC-95代码：	TO-277A
JESD-30 代码：	R-PDSO-F3
JESD-609代码：	e3
湿度敏感等级：	1
最大非重复峰值正向电流：	120 A
元件数量：	2
相数：	1
端子数量：	3
最高工作温度：	150 °C
最低工作温度：	-55 °C
最大输出电流：	4 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
最大重复峰值反向电压：	30 V
子类别：	Rectifier Diodes
表面贴装：	YES
技术：	SCHOTTKY
端子面层：	Matte Tin (Sn)
端子形式：	FLAT
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

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