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产品型号ST700C20L0的概述

芯片ST700C20L0的概述 ST700C20L0是一款由意法半导体(STMicroelectronics)公司制造的集成电路芯片,广泛应用于各种嵌入式系统与电子设备中。该芯片主要用于数据处理、控制功能与通信领域,受到了广泛的关注与应用。ST700系列芯片是意法半导体在微控制器市场上的重要产品之一,其高性能和多功能设计使其适用于各种复杂的电子项目。 ST700C20L0在电源管理、传感器接口和通信接口等方面,有着突出的性能优势。它的核心架构支持多种编程模式与操作系统,使得开发者能够灵活地进行系统设计。在嵌入式系统的开发中,ST700C20L0表现出优越的计算能力和响应速度,满足了现代应用对高性能和低功耗的双重要求。 芯片ST700C20L0的详细参数 ST700C20L0的核心参数如下: - 核心架构:基于ARM Cortex-M系列,具有高效能的计算能力。 - 工作频率:最高可达7...

产品型号ST700C20L0的Datasheet PDF文件预览

Bulletin I25190 rev. D 04/00  
ST700C..L SERIES  
PHASE CONTROL THYRISTORS  
Hockey Puk Version  
Features  
910A  
Center amplifying gate  
Metal case with ceramic insulator  
International standard case TO-200AC (B-PUK)  
TypicalApplications  
DC motor control  
Controlled DC power supplies  
AC controllers  
case style TO-200AC (B-PUK)  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST700C..L  
Units  
910  
55  
A
°C  
@ T  
hs  
IT(RMS)  
ITSM  
I2t  
1857  
25  
A
@ T  
°C  
hs  
@50Hz  
15700  
16400  
1232  
1125  
A
@ 60Hz  
@50Hz  
@ 60Hz  
A
KA2s  
KA2s  
V
DRM/VRRM  
1200 to 2000  
150  
V
t
typical  
µs  
q
TJ  
- 40 to 125  
°C  
1
www.irf.com  
ST700C..L Series  
Bulletin I25190 rev. D 04/00  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Code  
VDRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRMmax.  
@ TJ = TJ max  
mA  
Typenumber  
peak and off-state voltage  
repetitive peak voltage  
V
V
12  
16  
18  
20  
1200  
1600  
1800  
2000  
1300  
1700  
1900  
2100  
ST700C..L  
80  
On-state Conduction  
Parameter  
ST700C..L  
Units Conditions  
IT(AV) Max. average on-state current  
@ Heatsink temperature  
910 (355)  
55 (85)  
1857  
A
180° conduction, half sine wave  
°C  
double side (single side) cooled  
IT(RMS) Max. RMS on-state current  
DC @ 25°C heatsink temperature double side cooled  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
ITSM  
Max. peak, one-cycle  
15700  
16400  
13200  
13800  
1232  
1125  
871  
non-repetitive surge current  
A
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
KA2s  
795  
I2t  
Maximum I2t for fusing  
12321  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VT(TO) Low level value of threshold  
1
1.00  
1.13  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
voltage  
V
VT(TO) High level value of threshold  
2
(I > π x IT(AV)),TJ = TJ max.  
voltage  
rt1  
Low level value of on-state  
0.40  
0.35  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
mΩ  
slope resistance  
rt2  
High level value of on-state  
slope resistance  
(I > π x IT(AV)),TJ = TJ max.  
VTM  
IH  
Max. on-state voltage  
1.80  
600  
V
I = 2000A, TJ = TJ max, t = 10ms sine pulse  
pk p  
Maximum holding current  
Typical latching current  
mA  
TJ = 25°C, anode supply 12V resistive load  
IL  
1000  
2
www.irf.com  
ST700C..L Series  
Bulletin I25190 rev. D 04/00  
Switching  
Parameter  
ST700C..L  
1000  
Units Conditions  
A/µs  
di/dt  
Max. non-repetitive rate of rise  
of turned-on current  
Gate drive 20V, 20, t 1µs  
r
TJ = TJ max, anode voltage 80% VDRM  
Gate current 1A, di /dt = 1A/µs  
g
t
Typical delay time  
1.0  
d
q
V
= 0.67% VDRM, TJ = 25°C  
d
µs  
ITM = 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V  
t
Typical turn-off time  
150  
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs  
p
Blocking  
Parameter  
ST700C..L  
500  
Units Conditions  
dv/dt Maximum critical rate of rise of  
off-state voltage  
V/µs TJ = TJ max. linear to 80% rated VDRM  
IDRM  
IRRM  
Max. peak reverse and off-state  
leakage current  
80  
mA  
TJ = TJ max, rated VDRM/VRRM applied  
Triggering  
Parameter  
Maximum peak gate power  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
ST700C..L  
Units Conditions  
PGM  
10.0  
2.0  
TJ = TJ max, t 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
3.0  
TJ = TJ max, t 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
V
TJ = TJ max, t 5ms  
p
-VGM Maximum peak negative  
gate voltage  
5.0  
TYP.  
200  
MAX.  
-
T
J = - 40°C  
IGT  
DC gate current required  
to trigger  
100  
50  
200  
mA TJ = 25°C  
TJ = 125°C  
Max. required gate trigger/ cur-  
rent/ voltage are the lowest value  
which will trigger all units 12V  
anode-to-cathode applied  
-
-
2.5  
1.8  
1.1  
TJ = - 40°C  
VGT  
DC gate voltage required  
to trigger  
3.0  
-
V
TJ = 25°C  
J = 125°C  
T
Max. gate current/voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
VDRM anode-to-cathode applied  
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
10  
mA  
V
TJ = TJ max  
VGD  
0.25  
3
www.irf.com  
ST700C..L Series  
Bulletin I25190 rev. D 04/00  
Thermal and Mechanical Specification  
Parameter  
ST700C..L  
Units Conditions  
TJ  
T
Max. operating temperature range  
Max. storage temperature range  
-40 to 125  
-40 to 150  
°C  
stg  
RthJ-hs Max. thermal resistance,  
junction to heatsink  
0.073  
0.031  
DC operation single side cooled  
K/W  
K/W  
DC operation double side cooled  
RthC-hs Max. thermal resistance,  
case to heatsink  
0.011  
0.006  
14700  
(1500)  
255  
DC operation single side cooled  
DC operation double side cooled  
F
Mounting force, 10%  
N
(Kg)  
g
wt  
Approximate weight  
Case style  
TO - 200AC (B-PUK)  
See Outline Table  
RthJ-hs Conduction  
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)  
Sinusoidal conduction Rectangular conduction  
Conduction angle  
Units  
K/W  
Conditions  
TJ = TJ max.  
Single Side Double Side Single Side Double Side  
180°  
120°  
90°  
0.009  
0.011  
0.014  
0.020  
0.036  
0.009  
0.011  
0.014  
0.020  
0.036  
0.006  
0.011  
0.015  
0.021  
0.036  
0.006  
0.011  
0.015  
0.021  
0.036  
60°  
30°  
Ordering Information Table  
Device Code  
ST 70  
0
C
20  
L
1
1
2
5
6
7
8
3
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor  
Essential part number  
0 = Converter grade  
C = Ceramic Puk  
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)  
L = Puk Case TO-200AC (B-PUK)  
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)  
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)  
Critical dv/dt: None = 500V/µsec (Standard selection)  
8
-
L
= 1000V/µsec (Special selection)  
4
www.irf.com  
ST700C..L Series  
Bulletin I25190 rev. D 04/00  
Outline Table  
34 (1.34) DIA. MAX.  
TWO PLACES  
0.7 (0.03) MIN.  
PIN RECEPTACLE  
AMP. 60598-1  
53 (2.09) DIA. MAX.  
0.7 (0.03) MIN.  
6.2 (0.24) MIN.  
20° 5°  
4.7 (0.18)  
Case Style TO-200AC (B-PUK)  
All dimensions in millimeters (inches)  
36.5 (1.44)  
2 HOLES DIA. 3.5 (0.14) x  
2.5 (0.1) DEEP  
Quote between upper and lower  
pole pieces has to be considered  
after application of Mounting Force  
(see Thermal and Mechanical  
Specification)  
CREPAGE DISTANCE 36.33 (1.430) MIN.  
STRIKE DISTANCE 17.43 (0.686) MIN.  
13 0  
12 0  
11 0  
10 0  
9 0  
13 0  
12 0  
11 0  
10 0  
9 0  
ST 70 0C ..L S er ies  
(S in g le Sid e C o oled )  
S T 700C ..L Se ries  
(S in gle S id e C oo led )  
R
(D C ) = 0.0 73 K/W  
R
(D C ) = 0 .07 3 K/W  
th J-hs  
th J-hs  
C on duction Period  
8 0  
C ond uction Angle  
7 0  
8 0  
6 0  
7 0  
30°  
60°  
5 0  
3 0°  
90°  
6 0  
60°  
4 0  
1 20°  
5 0 0  
90°  
180°  
5 0  
120°  
3 0  
180°  
D C  
4 0  
2 0  
0
10 0  
2 0 0  
3 0 0  
40 0  
60 0  
70 0  
0
20 0  
4 00  
60 0  
8 0 0  
1 00 0  
A ve ra ge O n - sta te C u rren t (A )  
A ver a g e O n -sta te C u rren t (A )  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
5
www.irf.com  
ST700C..L Series  
Bulletin I25190 rev. D 04/00  
130  
1 30  
1 20  
1 10  
1 00  
90  
ST700C..L Series  
(Double Side Cooled)  
ST 700C ..L Se ries  
(D o ub le S id e C oo le d )  
120  
110  
100  
90  
R
(DC) = 0.031 K/W  
R
(D C ) = 0.031 K /W  
thJ-hs  
thJ- hs  
C onduction Angle  
C ondu ction Period  
80  
80  
70  
70  
30 °  
60  
60  
60°  
90 °  
50  
50  
30°  
60°  
90°  
120°  
40  
40  
120°  
180°  
18 0°  
30  
30  
D C  
20  
20  
0
200  
400  
600  
800  
1000 1200  
0
4 0 0  
8 00  
1 2 00  
1 60 0  
2 00 0  
A ver a g e O n -sta te C urre n t (A)  
Average On-state Current (A)  
Fig. 3 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
3500  
3000  
2500  
2000  
1500  
1000  
500  
2800  
2400  
2000  
1600  
1200  
800  
180°  
120°  
90°  
60°  
30°  
DC  
180°  
120°  
90°  
60°  
30°  
RMS Limit  
RMS Limit  
C ond uction Period  
ST700C..L Series  
C ondu ction Angle  
ST700C..L Series  
400  
T
= 125°C  
T
= 125°C  
J
J
0
0
0
200  
400  
600  
800  
1000 1200  
0
400  
800  
1200  
1600  
2000  
Average On-state Current (A)  
Average On-state Current (A)  
Fig. 6- On-state Power Loss Characteristics  
Fig. 5- On-state Power Loss Characteristics  
1 40 0 0  
1 30 0 0  
1 20 0 0  
1 10 0 0  
1 00 0 0  
9 00 0  
16000  
15000  
14000  
13000  
12000  
11000  
10000  
9000  
A t A n y R a ted Lo a d C o n d ition A n d W ith  
M a x im u m N on R e p etitiv e Su rg e C u rre n t  
V e rsu s P ulse T ra in D u ra tion . C o n tro l  
O f C on d u ction M a y N ot Be M a in ta in e d .  
R a te d  
V
A p p lie d F o llow in g Su rg e .  
RRM  
In itia l T  
= 125° C  
J
@
@
60 H z 0 .00 83  
50 H z 0 .01 00  
s
s
In itia l T  
=
125° C  
No V olta g e Re a p p lied  
Ra te d R ea p p lied  
J
V
RRM  
8 00 0  
8000  
S T 700C ..L S eries  
7 00 0  
ST 7 00C ..L Se rie s  
7000  
6 00 0  
6000  
1
10  
1 0 0  
0.01  
0.1  
1
Numb er Of Equa l Amp litude H alf C ycle C urren t Pulses (N)  
P u lse T ra in D u ra tion (s)  
Fig. 8 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
Fig. 7 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
6
www.irf.com  
ST700C..L Series  
Bulletin I25190 rev. D 04/00  
1 0 0 00  
1 00 0  
10 0  
T
=
2 5° C  
J
T
= 125 °C  
J
S T7 00C ..L S eries  
0.5  
1
1 .5  
2
2.5  
3
3.5  
4
In sta n ta n e ou s O n - sta te V o lta g e (V )  
Fig. 9 - On-state Voltage Drop Characteristics  
0.1  
ST 700C ..L Se rie s  
0.0 1  
Stea d y Sta te V a lu e  
0.073 K /W  
(Sin gle Sid e C o oled )  
0.031 K /W  
R
=
thJ-hs  
R
=
thJ-hs  
(D ou ble Sid e C o oled )  
(D C O p e ration )  
0.0 01  
0.0 01  
0. 01  
0 .1  
Sq u a re W a ve P ulse D ur atio n (s)  
1
1 0  
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics  
1 0 0  
R ec ta n g ula r g a te p ulse  
a ) Re co m m e n d e d lo a d lin e fo r  
ra ted d i/d t : 20V , 1 0oh m s; tr< =1 µ s  
b ) Re co m m e n d e d loa d lin e f or  
< = 30% ra ted d i/d t : 10 V , 10 oh m s  
tr< = 1 µs  
(1) P G M  
(2) P G M  
(3) P G M  
(4) P G M  
=
=
=
=
10W , tp  
20W , tp  
40W , tp  
60W , tp  
=
=
=
=
4m s  
2m s  
1m s  
0.66m s  
10  
(a )  
(b )  
1
(2)  
(1)  
(3) (4)  
V G D  
IG D  
Fre q u en c y Lim ite d b y P G (AV )  
10 1 00  
D e vice : ST 7 00C ..L S eries  
0 .1  
0. 1  
0.0 01  
0 .0 1  
1
In sta n ta n e ou s G a te C u rren t (A)  
Fig. 11 - Gate Characteristics  
7
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