STF25NM50N原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号STF25NM50N的概述

芯片STF25NM50N的概述 STF25NM50N是一款高性能的N沟道MOSFET，其主要特点是能够在高电压和高电流条件下稳定工作。MOSFET（金属氧化物半导体场效应晶体管）是现代电子设备中广泛使用的关键元件，因其具有较低的开关损耗、高速开关能力、优良的导通特性等优点，广泛应用于电源管理、电机驱动、电力转换等领域。STF25NM50N的设计使其在高频应用中表现出色，非常适合于开关电源、逆变器和功率放大器等。芯片STF25NM50N的详细参数 STF25NM50N的主要电气参数如下： - 最大漏极-源极电压 (V_DS): 500V - 最大持续漏极电流 (I_D): 25A - 脉冲漏极电流 (I_D,pulse): 70A - 栅极-源极阈值电压 (V_GS(th)): 2V to 4V - 栅极电流 (I_G): ±20mA - 源极-漏极导通电阻 (R_DS(on)): 0...

产品型号STF25NM50N的Datasheet PDF文件预览

STP25NM50N - STF25NM50N

STB25NM50N/-1 - STW25NM50N

N-CHANNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247

SECOND GENERATION MDmesh™ MOSFET

Table 1: General Features

Figure 1: Package

TYPE

(@Tj

)

DS(on)

DSS

MAX

STB25NM50N-1

STF25NM50N

STP25NM50N

STW25NM50N

STB25NM50N

550V

22 A 0.140 Ω

22 A(*) 0.140 Ω

22 A 0.140 Ω

TO-220

I²PAK

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE

CHARGE

D²PAK

■ LOW GATE INPUT RESISTANCE

TO-247

TO-220FP

DESCRIPTION

The STx25NM50N is realized with the second

generation of MDmesh Technology. This revolu-

tionary MOSFET associates a new vertical struc-

ture to the Company's strip layout to yield one of

the world's lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high

efficiency converters

Figure 2: Internal Schematic Diagram

APPLICATIONS

The MDmesh™ II family is very suitable for in-

creasing power density of high voltage converters

allowing system miniaturization and higher effi-

ciencies.

Table 2: Order Codes

SALES TYPE

STP25NM50N

STF25NM50N

STB25NM50N-1

STW25NM50N

STB25NM50N

MARKING

P25NM50N

F25NM50N

B25NM50N

W25NM50N

B25NM50N

PACKAGE

TO-220

TO-220FP

I²PAK

PACKAGING

TUBE

TO-247

D²PAK

TUBE

TAPE & REEL

Rev. 9

October 2005

1/16

STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N

Table 3: Absolute Maximum ratings

Symbol

Parameter

Value

Unit

TO-220/D²PAK/I²PAK/

TO-220FP

TO-247

Drain-source Voltage (V = 0)

500

DGR

Drain-gate Voltage (R = 20 kΩ)

500

Gate- source Voltage

±25

Drain Current (continuous) at T = 25°C

22(*)

14 (*)

88 (*)

Drain Current (continuous) at T = 100°C

( )

Drain Current (pulsed)

Total Dissipation at T = 25°C

160

TOT

Derating Factor

1.28

0.32

W/°C

V/ns

°C

dv/dt(1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

–55 to 150

150

Max. Operating Junction Temperature

( ) Pulse width limited by safe operating area

(1) I ≤ 22 A, di/dt ≤ 400 A/µs, V =80% V .

(BR)DSS

(*) Limited only by maximum temperature allowed

Table 4: Thermal Data

TO-220/D²PAK/I²PAK/

TO-220FP

TO-247

Rthj-case

Rthj-amb

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

0.78

62.5

3.1

°C/W

Maximum Lead Temperature For Soldering

Purpose

300

°C

Table 5: Avalanche Characteristics

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by T max)

Single Pulse Avalanche Energy

350

(starting T = 25 °C, I = I , V = 50 V)

2/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 6: On/Off

Symbol

Parameter

Test Conditions

Value

Typ.

Unit

Min.

Max.

Drain-source

= 1mA, V = 0

500

(BR)DSS

Breakdown Voltage

dv/dt(2)

Drain Source Voltage

Slope

Vdd=400V, Id=25A,

Vgs=10V

V/ns

Zero Gate Voltage

= Max Rating

= Max Rating,

= 125 °C

DSS

µA

Drain Current (V = 0)

Gate-body Leakage

= ± 20V

100

GSS

Current (V = 0)

= V , I = 250 µA

Gate Threshold Voltage

GS(th)

Static Drain-source On

Resistance

= 10V, I = 11 A

0.110

0.140

Ω

DS(on)

(2) Characteristic value at turn off on inductive load

Table 7: Dynamic

Symbol

Parameter

Test Conditions

=15 V I =11 A

Min.

Typ.

Max.

Unit

(1)

Forward Transconductance

, D

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

= 25V, f = 1 MHz, V = 0

2565

511

iss

oss

rss

(*) Equivalent Output

Capacitance

= 0V, V = 0V to 400V

315

oss eq.

Turn-on Delay Time

Rise Time

Off-voltageRise Time

Fall Time

=250 V, I = 11A

d(on)

R = 4.7Ω V = 10 V

G GS

(see Figure 19)

d(off)

= 400V, I =22 A,

= 10V,

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

(see Figure 23)

Gate Input Resistance

f=1MHz Gate DC Bias=0

Test Signal Level=20mV

Open Drain

1.6

Ω

Table 8: Source Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

Source-drain Current (pulsed)

( )

SDM

(1)

= 22 A, V

= 0

Forward On Voltage

1.3

= 22A, di/dt = 100 A/µs

= 100 V, T = 25°C

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

460

6.9

µC

(see Figure 21)

RRM

= 22 A, di/dt = 100 A/µs

= 100 V, T = 150°C

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

532

8.25

µC

(see Figure 21)

RRM

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(*) C is defined as a constant equivalent capacitance giving the same charging time as C

when V increases from 0 to 80% V

oss eq.

oss

3/16

STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N

Figure 3: Safe Operating Area For TO-220/

I²PAK/D²PAK

Figure 6: Thermal Impedance TO-220/I²PAK/

D²PAK

Figure 4: Safe Operating Area For TO-220FP

Figure 7: Thermal Impedance For TO-220FP

Figure 5: Safe Operating Area For TO-247

Figure 8: Thermal Impedance For TO-247

4/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

Figure 9: Output Characteristics

Figure 12: Transfer Characteristics

Figure 13: Static Drain-Source On Resistance

Figure 14: Capacitance Variations

Figure 10: Transconductance

Figure 11: Gate Charge vs Gate-source Voltage

5/16

STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N

Figure 15: Normalized Gate Threshold Voltage

vs Temperature

Figure 17: Normalized On Resistance vs Tem-

perature

Figure 16: Source-Drain Forward Characteris-

tics

Figure 18: Normalized BV

vs Temperature

DSS

6/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

Figure 19: Unclamped Inductive Load Test Cir-

Figure 22: Unclamped Inductive Wafeform

cuit

Figure 20: Switching Times Test Circuit For

Resistive Load

Figure 23: Gate Charge Test Circuit

Figure 21: Test Circuit For Inductive Load

Switching and Diode Recovery Times

7/16

STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These

packages have a Lead-free second level interconnect . The category of second level interconnect is

marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The

maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an

ST trademark. ECOPACK specifications are available at: www.st.com

8/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

D PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

MIN. MAX. MIN. MAX.

330 12.992

inch

DIM.

1.5

12.8

20.2

24.4

100

0.059

13.2 0.504 0.520

0795

26.4 0.960 1.039

3.937

30.4

1.197

BASE QTY

BULK QTY

1000

TAPE MECHANICAL DATA

1000

inch

DIM.

MIN. MAX. MIN. MAX.

10.5 10.7 0.413 0.421

15.7 15.9 0.618 0.626

1.5

1.6 0.059 0.063

1.59 1.61 0.062 0.063

1.65 1.85 0.065 0.073

11.4

4.8

3.9

11.9

1.9

11.6 0.449 0.456

5.0 0.189 0.197

4.1 0.153 0.161

12.1 0.468 0.476

2.1 0.075 0.082

1.574

0.25 0.35 0.0098 0.0137

23.7 24.3 0.933 0.956

* on sales type

9/16

STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N

TO-220 MECHANICAL DATA

mm.

TYP

inch

DIM.

MIN.

4.40

0.61

1.15

0.49

15.25

MAX.

4.60

0.88

1.70

0.70

15.75

10.40

2.70

5.15

1.32

6.60

2.72

MIN.

0.173

0.024

0.045

0.019

0.60

TYP.

MAX.

0.181

0.034

0.066

0.027

0.620

0.409

0.106

0.202

0.052

0.256

0.107

0.551

0.154

0.393

0.094

0.194

0.048

0.244

0.094

0.511

0.137

2.40

4.95

1.23

6.20

2.40

L20

L30

øP

3.50

3.93

16.40

28.90

0.645

1.137

3.75

2.65

3.85

2.95

0.147

0.104

0.151

0.116

10/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

TO-220FP MECHANICAL DATA

mm.

TYP

inch

TYP.

DIM.

MIN.

4.4

MAX.

4.6

2.7

2.75

0.7

MIN.

0.173

0.098

0.017

0.030

0.045

0.195

0.094

0.393

MAX.

0.181

0.106

0.108

0.027

0.039

0.067

0.204

0.106

0.409

2.5

0.45

0.75

1.15

4.95

2.4

1.7

5.2

2.7

10.4

0.630

28.6

9.8

2.9

15.9

30.6

10.6

3.6

1.126

.0385

0.114

0.626

0.354

0.118

1.204

0.417

0.141

0.645

0.366

0.126

16.4

9.3

3.2

1 2

11/16

STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N

TO-247 MECHANICAL DATA

mm.

TYP

inch

DIM.

MIN.

4.85

2.20

1.0

MAX.

5.15

MIN.

0.19

TYP.

MAX.

0.20

2.60

0.086

0.039

0.079

0.118

0.015

0.781

0.608

0.102

0.055

0.094

0.134

0.03

1.40

2.0

2.40

3.0

3.40

0.40

19.85

15.45

0.80

20.15

15.75

0.793

0.620

5.45

18.50

5.50

0.214

0.728

0.216

14.20

3.70

14.80

4.30

0.560

0.14

0.582

0.17

øP

øR

3.55

4.50

3.65

5.50

0.140

0.177

0.143

0.216

12/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

TO-262 (I²PAK) MECHANICAL DATA

mm.

TYP

inch

TYP.

DIM.

MIN.

4.40

2.40

0.61

1.14

0.49

1.23

8.95

2.40

4.95

MAX.

4.60

2.72

0.88

1.70

0.70

1.32

9.35

2.70

5.15

10.40

MIN.

0.173

0.094

0.024

0.044

0.019

0.048

0.352

0.094

0.194

0.393

0.511

0.137

0.050

MAX.

0.181

0.107

0.034

0.066

0.027

0.052

0.368

0.106

0.202

0.410

0.551

0.154

0.055

3.50

1.27

3.93

1.40

13/16

STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N

D²PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

mm.

inch

TYP.

DIM.

MIN.

4.4

TYP

MAX.

4.6

MIN.

0.173

0.098

0.001

0.027

0.044

0.017

0.048

0.352

MAX.

0.181

0.106

0.009

0.036

0.067

0.023

0.053

0.368

2.49

0.03

0.7

2.69

0.23

0.93

1.7

1.14

0.45

1.23

8.95

0.6

1.36

9.35

0.315

0.334

10.4

0.393

8.5

4.88

5.28

15.85

1.4

0.192

0.590

0.050

0.055

0.094

0.208

0.625

0.055

0.068

0.126

1.27

1.4

1.75

3.2

2.4

0.4

0.015

0º

4º

14/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

Table 9: Revision History

Date

Revision

Description of Changes

30-Nov-2004

08-Mar-2005

22-Mar-2005

13-Apr-2005

28-Apr-2005

16-May-2005

17-Jun-2005

07-Sep-2005

05-Oct-2005

First Release.

Inserted Curves

Modified title

Modified some values

Modified some values in Table 8

Modified values in tab7

Inserted new row in table 6

Inserted ecopack indication

Modified curves 9-12

15/16

STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

All other names are the property of their respective owners

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

16/16

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STF25NM50N产品参数

型号:	STF25NM50N
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	STMICROELECTRONICS
零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	8.03
雪崩能效等级（Eas）：	350 mJ
外壳连接：	ISOLATED
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	500 V
最大漏极电流 (Abs) (ID)：	22 A
最大漏极电流 (ID)：	22 A
最大漏源导通电阻：	0.14 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	40 W
最大脉冲漏极电流 (IDM)：	88 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Matte Tin (Sn) - annealed
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号STF25NM50N的概述

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