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STL34NF06

N-CHANNEL 60V - 0.024Ω - 34A PowerFLAT™

LOW GATE CHARGE STripFET™II MOSFET

PRELIMINARY DATA

TYPE

V

DSS

R

I

D

DS(on)

STL34NF06

60 V

< 0.028Ω

34 A

TYPICAL R (on) = 0.024Ω

DS

IMPROVED DIE-TO-FOOTPRINT RATIO

VERY LOW PROFILE PACKAGE

DESCRIPTION

PowerFLAT™(5x5)

This Power MOSFET is the second generation of

STMicroelectronics unique “STripFET™” technolo-

gy. The resulting transistor shows extremely low on-

resistance and minimal gate charge. The new Pow-

erFLAT™ package allow a significant reduction in

board space without compramising performance.

(Chip Scale Package)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

DC-DC CONVERTERS

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

60

Unit

V

DS

Drain-source Voltage (V = 0)

GS

V

Drain-gate Voltage (R = 20 kΩ)

60

V

DGR

GS

V

Gate- source Voltage

± 20

V

GS

I

Drain Current (continuous) at T = 25°C (*)

34

20

A

D

C

Drain Current (continuous) at T = 100°C

C

I

( )

Drain Current (pulsed)

136

70

A

W

DM

P

Total Dissipation at T = 25°C

TOT

C

Derating Factor

0.56

250

W/°C

mJ

E

AS

(1)

Single Pulse Avalanche Energy

Storage Temperature

T

stg

–55 to 150

°C

T

Max. Operating Junction Temperature

j

(1) Starting T = 25°C, I = 17A, V = 42V

(•)Pulse width limited by safe operating area

j

D

DD

(*) Current Limited by Wire Bonding is 20A

November 2002

1/6

STL34NF06

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case Max

1.8

°C/W

Rthj-pcb (#) Thermal Resistance Junction-ambient Max

(*) When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec.

31.2

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol

Parameter

Drain-source

Test Conditions

Min.

Typ.

Max.

Unit

V

I

= 250 µA, V = 0

60

V

(BR)DSS

D

GS

Breakdown Voltage

I

Zero Gate Voltage

V

= Max Rating

DS

1

µA

nA

DSS

Drain Current (V = 0)

GS

= Max Rating, T = 125 °C

10

DS

GS

C

I

Gate-body Leakage

= ± 20V

±100

GSS

Current (V = 0)

DS

ON (1)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V

R

V

= V , I = 250µA

Gate Threshold Voltage

2

GS(th)

DS

GS

D

Static Drain-source On

Resistance

= 10V, I = 17A

0.024

0.028

Ω

DS(on)

D

DYNAMIC

Symbol

Parameter

Forward Transconductance

Input Capacitance

Test Conditions

Min.

Typ.

TBD

920

225

80

Max.

Unit

S

g

(1)

V

= 30 V I = 17 A

DS , D

fs

C

V

= 25V, f = 1 MHz, V = 0

DS GS

pF

iss

Output Capacitance

oss

C

rss

Reverse Transfer

Capacitance

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2/6

STL34NF06

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

t

V

R

= 30V, I = 17 A

Turn-on Delay Time

11

ns

d(on)

DD

D

= 4.7Ω V = 10V

G

GS

t

Rise Time

50

ns

r

(see test circuit, Figure 3)

Q

V

= 48V, I = 34 A,

= 10V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

32

6.5

43

nC

g

DD

D

GS

Q

gs

Q

14.4

gd

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

t

V

R

= 30V, I = 17A,

Turn-Off-Delay Time

27

ns

d(off)

DD

D

= 4.7Ω, V = 10V

GS

(see test circuit, Figure 3)

G

t

Fall Time

11

ns

f

SOURCE DRAIN DIODE

Symbol

(3)

Parameter

Test Conditions

Typ.

Max.

34

Unit

A

I

Source-drain Current

SD

I

(2)

(1)

Source-drain Current (pulsed)

Forward On Voltage

136

1.2

A

SDM

V

I

= 34 A, V = 0

V

SD

GS

t

= 34 A, di/dt = 100A/µs,

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

63

151

4.8

ns

nC

A

rr

SD

V

= 10V, T = 150°C

j

DD

Q

rr

(see test circuit, Figure 5)

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Current Limited by Wire Bonding is 20A

3/6

STL34NF06

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Fig. 4: Gate Charge test Circuit

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

4/6

STL34NF06

PowerFLAT™(5x5) MECHANICAL DATA

mm.

TYP

0.90

0.02

0.51

0.41

5.00

3.18

1.27

inch

TYP.

DIM.

MIN.

MAX.

1.00

0.05

0.58

0.48

MIN.

MAX.

0.039

0.002

0.023

0.019

A

A1

b

0.035

0.001

0.020

0.016

0.197

0.125

0.050

0.43

0.33

0.017

0.013

c

D

E

E2

e

3.10

3.25

0.122

0.128

5/6

STL34NF06

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from

its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information

previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or

systems without express written approval of STMicroelectronics.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

6/6

型号:	STL31-03SGU
是否Rohs认证：	符合
生命周期：	Contact Manufacturer
IHS 制造商：	MPE GARRY GMBH
Reach Compliance Code：	compliant
风险等级：	5.61
其他特性：	ROHS COMPLIANT
主体宽度：	0.087 inch
主体深度：	0.147 inch
主体长度：	0.166 inch
主体/外壳类型：	RECEPTACLE
连接器类型：	BOARD CONNECTOR
联系完成配合：	AU
联系完成终止：	Gold (Au)
触点性别：	MALE
触点材料：	BRASS
触点模式：	RECTANGULAR
触点样式：	RND PIN-SKT
介电耐压：	700VAC V
绝缘体材料：	THERMOPLASTIC
JESD-609代码：	e4
制造商序列号：	530
插接触点节距：	0.05 inch
安装方式：	RIGHT ANGLE
安装类型：	BOARD
连接器数：	ONE
PCB行数：	1
装载的行数：	1
最高工作温度：	105 °C
最低工作温度：	-40 °C
PCB接触模式：	RECTANGULAR
额定电流（信号）：	1 A
参考标准：	UL
可靠性：	COMMERCIAL
子类别：	Headers and Edge Type Connectors
端子长度：	0.118 inch
端子节距：	1.27 mm
端接类型：	SOLDER
触点总数：	3
Base Number Matches：	1

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