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产品型号STP140NF55的概述

芯片STP140NF55概述 STP140NF55是一款基于N沟道MOSFET技术的功率晶体管，广泛应用于开关电源、DC-DC转换器、电机驱动以及其他需要高效功率开关的电路中。这款芯片拥有低导通电阻和良好的热稳定性，因而能够在高电流和高频率条件下可靠工作。其出色的性能和可靠性使其成为工业、消费电子及汽车电子领域常用的器件。 STP140NF55的主要特点包括高电压承受能力、超低的导通阻抗和快速的开关速度。作为一款N沟道MOSFET，STP140NF55的优点在于其在导通状态下提供更低的电阻，从而减少功耗和发热。这些特性使其非常适合在功率密集型应用中使用，如电源管理系统、逆变器以及电动车充电器等。芯片STP140NF55的详细参数 - 类型: N沟道MOSFET - 最大漏极-源极电压 (Vds): 55V - 连续漏极电流 (Id): 140A - 导通电阻 (Rds(on)): 0...

产品型号STP140NF55的Datasheet PDF文件预览

STB140NF55 - STB140NF55-1

STP140NF55

N-channel 55V - 0.0065Ω - 80A - D²PAK - I²PAK - TO-220

STripFET™ II Power MOSFET

General features

(1)

Type

V_DSS

R_DS(on)

I_D

STB140NF55

STB140NF55-1

STP140NF55

55V

<0.008Ω

80A

1. Current limited by package

D²PAK

TO-220

I²PAK

Description

This Power MOSFET is the latest development of

STMicroelectronics unique “Single Feature

Size™” strip-based process. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalance

characteristics and less critical alignment steps

therefore a remarkable manufacturing

reproducibility.

Internal schematic diagram

Applications

■ Motor control

■ High current, switching application

Order codes

Part number

Marking

Package

Packaging

STB140NF55

STB140NF55-1

STP140NF55

B140NF55

P140NF55

D²PAK

I²PAK

Tape & reel

Tube

TO-220

Tube

March 2007

Rev 4

1/15

www.st.com

Contents

STB140NF55 - STB140NF55-1 - STP140NF55

Contents

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1

Electrical characteristics (curves)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2/15

STB140NF55 - STB140NF55-1 - STP140NF55

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DS

V_GS

Drain-source voltage (V_GS= 0)

Gate- source voltage

(1)

I_D

Drain current (continuous) at T_C= 25°C

Drain current (continuous) at T_C= 100°C

Drain current (pulsed)

(1)

I_D

(2)

I_DM

320

300

P_TOT

Total dissipation at T_C= 25°C

Derating factor

W/°C

V/ns

dv/dt ⁽³⁾

Peak diode recovery voltage slope

Single pulse avalance energy

Storage temperature

(4)

E_AS

1.3

T_stg

T_j

–55 to 175

°C

Operating junction temperature

1. Current limited by package

2. Pulse width limited by safe operating area

3. I_SD< 80A, di/dt < 300A/µs, V_DD=80%V_(BR)DSS

4. Starting Tj = 25°C, I_D= 40A, V_DD= 30V

Table 2.

Thermal data

Value

Symbol

Parameter

Unit

TO-220 - I²PAK

D²PAK

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Rthj-pcb ⁽¹⁾Thermal resistance junction-pcb max

0.5

°C/W

62.5

Maximum lead temperature for soldering

purpose (for 10 sec, 1.6mm from case)

T_l

300

°C

1. When mounted on 1 inch², FR4 board, 2 oz Cu

3/15

Electrical characteristics

STB140NF55 - STB140NF55-1 - STP140NF55

Electrical characteristics

=25°C unless otherwise specified)

CASE

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min. Typ.

Max. Unit

Drain-source

V_(BR)DSS

I_D= 250 µA, V_GS= 0

breakdown voltage

Zero gate voltage

_DS= Max rating

µA

I_DSS

drain current (V_GS= 0)

V_DS= Max rating, T_C= 125 °C

Gate-body leakage

current (V_DS= 0)

I_GSS

V_GS= 20V

100 nA

V_GS(th)Gate threshold voltage

V_DS= V_GS, I_D= 250µA

V_GS= 10 V, I_D= 40 A

Static drain-source on

R_DS(on)

0.0065 0.008

Ω

resistance

Table 4.

Dynamic

Parameter

Symbol

Test conditions

Min. Typ.

Max. Unit

(1)

g_fs

Forward transconductance V_DS= 15V, I_D= 40 A

Input capacitance

100

C_iss

C_oss

C_rss

5300

1000

290

V_DS= 25V, f = 1 MHz

V_GS= 0

Output capacitance

Reverse transfer

capacitance

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

V_DD= 44V, I_D= 80A

V_GS=10V

142

(see Figure 14)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

4/15

STB140NF55 - STB140NF55-1 - STP140NF55

Electrical characteristics

Table 5.

Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V_DD= 27.5 V, I_D= 40A

R_G= 4.7Ω , V_GS= 10V

(see Figure 13)

t_d(on)

t_r

Turn-on delay time

Rise time

150

V_DD= 27.5V, I_D= 40A,

R_G= 4.7Ω, V_GS= 10V

(see Figure 13)

t_d(off)

t_f

Turn-off-delay time

Fall time

125

Table 6.

Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

I_SD

Source-drain current

(1)

I_SDM

Source-drain current (pulsed)

320

(2)

V_SD

Forward on voltage

I_SD= 80A, V_GS= 0

1.5

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

275

6.5

I_SD= 80A, di/dt = 100 A/µs,

V_DD= 20V, T_j= 150°C

Q_rr

(see Figure 15)

I_RRM

1. Pulse width limited safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

5/15

Electrical characteristics

STB140NF55 - STB140NF55-1 - STP140NF55

Figure 2. Thermal impedance

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

Figure 3. Output characteristics

Figure 5. Transconductance

6/15

Figure 4. Transfer characteristics

Figure 6. Static drain-source on resistance

STB140NF55 - STB140NF55-1 - STP140NF55

Electrical characteristics

Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs

vs temperature

temperature

Figure 11. Source-drain diode forward

characteristics

Figure 12. Normalized B

vs temperature

VDSS

7/15

Test circuit

STB140NF55 - STB140NF55-1 - STP140NF55

Figure 14. Gate charge test circuit

Test circuit

Figure 13. Switching times test circuit for

resistive load

Figure 15. Test circuit for inductive load

switching and diode recovery times

Figure 16. Unclamped inductive load test

circuit

Figure 17. Unclamped inductive waveform

Figure 18. Switching time waveform

8/15

STB140NF55 - STB140NF55-1 - STP140NF55

Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect. The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com

9/15

Package mechanical data

STB140NF55 - STB140NF55-1 - STP140NF55

TO-220 mechanical data

Typ

inch

Typ

Dim

Min

Max

Min

Max

4.40

0.61

1.14

0.49

15.25

4.60

0.88

1.70

0.70

15.75

0.173

0.024

0.044

0.019

0.6

0.181

0.034

0.066

0.027

0.62

1.27

0.050

10.40

2.70

5.15

1.32

6.60

2.72

0.393

0.094

0.194

0.048

0.244

0.094

0.511

0.137

0.409

0.106

0.202

0.051

0.256

0.107

0.551

0.154

2.40

4.95

1.23

6.20

2.40

L20

L30

θP

3.50

3.93

16.40

0.645

28.90

1.137

3.75

3.85

2.95

0.147

0.104

0.151

0.116

2.65

10/15

STB140NF55 - STB140NF55-1 - STP140NF55

Package mechanical data

TO-262 (I²PAK) MECHANICAL DATA

mm.

TYP

inch

TYP.

DIM.

MIN.

4.40

2.40

0.61

1.14

0.49

1.23

8.95

2.40

4.95

MAX.

4.60

2.72

0.88

1.70

0.70

1.32

9.35

2.70

5.15

10.40

MIN.

0.173

0.094

0.024

0.044

0.019

0.048

0.352

0.094

0.194

0.393

0.511

0.137

0.050

MAX.

0.181

0.107

0.034

0.066

0.027

0.052

0.368

0.106

0.202

0.410

0.551

0.154

0.055

3.50

1.27

3.93

1.40

11/15

Package mechanical data

STB140NF55 - STB140NF55-1 - STP140NF55

D²PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

mm.

inch

TYP.

DIM.

MIN.

4.4

TYP

MAX.

4.6

MIN.

0.173

0.098

0.001

0.027

0.044

0.017

0.048

0.352

MAX.

0.181

0.106

0.009

0.036

0.067

0.023

0.053

0.368

2.49

0.03

0.7

2.69

0.23

0.93

1.7

1.14

0.45

1.23

8.95

0.6

1.36

9.35

0.315

0.334

10.4

0.393

8.5

4.88

5.28

15.85

1.4

0.192

0.590

0.050

0.055

0.094

0.208

0.625

0.055

0.068

0.126

1.27

1.4

1.75

3.2

2.4

0.4

0.015

0º

4º

12/15

STB140NF55 - STB140NF55-1 - STP140NF55

Packaging mechanical data

D PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

MIN. MAX. MIN. MAX.

330 12.992

inch

DIM.

1.5

12.8

20.2

24.4

100

0.059

13.2 0.504 0.520

0795

26.4 0.960 1.039

3.937

30.4

1.197

BASE QTY

BULK QTY

1000

TAPE MECHANICAL DATA

1000

inch

DIM.

MIN. MAX. MIN. MAX.

10.5 10.7 0.413 0.421

15.7 15.9 0.618 0.626

1.5

1.6 0.059 0.063

1.59 1.61 0.062 0.063

1.65 1.85 0.065 0.073

11.4

4.8

3.9

11.9

1.9

11.6 0.449 0.456

5.0 0.189 0.197

4.1 0.153 0.161

12.1 0.468 0.476

2.1 0.075 0.082

1.574

0.25 0.35 0.0098 0.0137

23.7 24.3 0.933 0.956

* on sales type

13/15

Revision history

STB140NF55 - STB140NF55-1 - STP140NF55

Revision history

Table 7.

Date

Revision history

Revision

Changes

07-Dec-2004

07-Apr-2006

04-Aug-2006

02-Mar-2007

Initial release.

Updated Figure 8

New template, modified Figure 1

Applications have been updated

14/15

STB140NF55 - STB140NF55-1 - STP140NF55

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right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any

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Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no

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STP140NF55产品参数

型号:	STP140NF55
Brand Name：	STMicroelectronics
是否Rohs认证：	符合
生命周期：	Not Recommended
零件包装代码：	TO-220AB
包装说明：	TO-220, 3 PIN
针数：	3
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	8.48
雪崩能效等级（Eas）：	1300 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	55 V
最大漏极电流 (Abs) (ID)：	80 A
最大漏极电流 (ID)：	80 A
最大漏源导通电阻：	0.008 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	300 W
最大脉冲漏极电流 (IDM)：	320 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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