STP19N06FI原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

STP19N06

STP19N06FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

I_D

STP19N06

STP19N06FI

60 V

< 0.1 Ω

19 A

13 A

■

TYPICAL R_DS(on)= 0.085 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

175^oC OPERATING TEMPERATURE

APPLICATION ORIENTED

3

2

1

TO-220

ISOWATT220

CHARACTERIZATION

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP19N06

STP19N06FI

V_DS

V_{DG R}

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

60

V

± 20

V

19

13

9

A

I_D

A

I_DM(•)

P_tot

76

A

Total Dissipation at T_c= 25 ^oC

80

35

W

W/^oC

V

^oC

Derating Factor

0.53

0.23

2000

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

February 1995

STP19N06/FI

THERMAL DATA

TO-220

ISOWATT220

R_thj-caseThermal Resistance Junction-case

Max

1.88

4.29

^oC/W

R_thj-ambThermal Resistance Junction-ambient

R_thc-sinkThermal Resistance Case-sink

Max

Typ

62.5

0.5

300

^oC/W

^oC

T_l

Maximum Lead Temperature For Soldering Purpose

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

I_AR

Avalanche Current, Repetitive or Not-Repetitive

19

A

(pulse width limited by T_jmax, δ < 1%)

E_AS

E_AR

I_AR

Single Pulse Avalanche Energy

76

19

13

mJ

A

(starting T_j= 25 ^oC, I_D= I_AR, V_DD= 25 V)

Repetitive Avalanche Energy

(pulse width limited by T_jmax, δ < 1%)

Avalanche Current, Repetitive or Not-Repetitive

(T_c= 100 ^oC, pulse width limited by T_jmax, δ < 1%)

ELECTRICAL CHARACTERISTICS (T_case= 25 ^oC unless otherwise specified)

OFF

Symbol

V_(BR)DSSDrain-source

Breakdown Voltage

Zero Gate Voltage

Drain Current (V_GS= 0) V_DS= Max Rating x 0.8 T_c= 125 C

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I_D= 250 µA V_GS= 0

60

V

I_DSS

I_GSS

V_DS= Max Rating

250

1000

µA

o

Gate-body Leakage

Current (V_DS= 0)

V_GS= ± 20 V

± 100

nA

ON ( )

Symbol

Parameter

Test Conditions

Min.

Typ.

3

Max.

Unit

V_GS(th)

Gate Threshold Voltage V_DS= V_GSI_D= 250 µA

2

4

V

R_DS(on)Static Drain-source On V_GS= 10V I_D= 9.5 A

0.085

0.1

0.2

Ω

Resistance

V_GS= 10V I_D= 9.5 A T_c= 100^oC

I_D(on)

On State Drain Current V_DS> I_D(on)x R_DS(on)max

V_GS= 10 V

19

A

DYNAMIC

Symbol

Parameter

Forward

Test Conditions

Min.

Typ.

Max.

Unit

g_fs( )

V_DS> I_D(on)x R_DS(on)max

I_D= 9.5 A

7

9

S

Transconductance

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V_DS= 25 V f = 1 MHz V_GS= 0

550

230

80

700

290

100

pF

2/10

STP19N06/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Turn-on Time

Rise Time

Test Conditions

Min.

Typ.

Max.

Unit

t_d(on)

t_r

V_DD= 30 V

R_G= 4.7 Ω

I_D= 9.5 A

V_GS= 10 V

30

90

42

120

ns

(see test circuit, figure 3)

(di/dt)_onTurn-on Current Slope V_DD= 48 V

I_D= 19 A

170

A/µs

R_G= 47 Ω

V_GS= 10 V

(see test circuit, figure 5)

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DD= 48 V I_D= 19 A V_GS= 10 V

23

10

8

30

nC

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

t_r(Voff)

t_f

t_c

Off-voltage Rise Time

Fall Time

Cross-over Time

V_DD= 48 V

R_G= 4.7 Ω

(see test circuit, figure 5)

I_D= 19 A

V_GS= 10 V

14

20

40

20

28

56

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Source-drain Current

Test Conditions

Min.

Typ.

Max.

Unit

I_SD

19

76

A

I_SDM(• ) Source-drain Current

(pulsed)

V_SD( ) Forward On Voltage

I_SD= 19 A V_GS= 0

1.6

V

t_rr

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

I_SD= 19 A

V_DD= 30 V

(see test circuit, figure 5)

di/dt = 100 A/µs

60

0.16

5

ns

T_j= 150 ^oC

Q_rr

µC

I_RRM

A

( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(•) Pulse width limited by safe operating area

Safe Operating Areas For TO-220

Safe Operating Areas For ISOWATT220

3/10

STP19N06/FI

Thermal Impedeance For TO-220

Thermal Impedance For ISOWATT220

Derating Curve For ISOWATT220

Transfer Characteristics

Derating Curve For TO-220

Output Characteristics

4/10

STP19N06/FI

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature

5/10

STP19N06/FI

Turn-on Current Slope

Turn-off Drain-source Voltage Slope

Cross-over Time

Switching Safe Operating Area

Accidental Overload Area

Source-drain Diode Forward Characteristics

6/10

STP19N06/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 2: Unclamped Inductive Waveforms

Fig. 3: Switching Times Test Circuits For

Fig. 4: Gate Charge Test Circuit

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/10

STP19N06/FI

TO-220 MECHANICAL DATA

mm

inch

TYP.

DIM.

MIN.

4.40

1.23

2.40

TYP.

MAX.

4.60

1.32

2.72

MIN.

0.173

0.048

0.094

MAX.

0.181

0.051

0.107

A

C

D

D1

E

1.27

0.050

0.49

0.61

1.14

4.95

2.4

0.70

0.88

1.70

5.15

2.7

0.019

0.024

0.044

0.194

0.094

0.393

0.027

0.034

0.067

0.203

0.106

0.409

F

F1

F2

G

G1

H2

L2

L4

L5

L6

L7

L9

DIA.

10.0

10.40

16.4

0.645

13.0

2.65

15.25

6.2

14.0

2.95

15.75

6.6

0.511

0.104

0.600

0.244

0.137

0.147

0.551

0.116

0.620

0.260

0.154

0.151

3.5

3.93

3.85

3.75

L2

Dia.

L5

L9

L7

L6

L4

P011C

8/10

STP19N06/FI

ISOWATT220 MECHANICAL DATA

mm

inch

TYP.

DIM.

MIN.

4.4

TYP.

MAX.

4.6

2.7

2.75

0.7

1

MIN.

0.173

0.098

0.015

0.030

0.045

0.195

0.094

0.393

MAX.

0.181

0.106

0.108

0.027

0.039

0.067

0.204

0.106

0.409

A

B

2.5

D

2.5

E

0.4

F

0.75

1.15

4.95

2.4

F1

F2

G

1.7

5.2

2.7

10.4

G1

H

10

L2

L3

L4

L6

L7

Ø

16

0.630

28.6

9.8

15.9

9

30.6

10.6

16.4

9.3

1.126

0.385

0.626

0.354

0.118

1.204

0.417

0.645

0.366

0.126

3

3.2

L3

L6

L7

Ø

1 2 3

L4

L2

P011G

9/10

STP19N06/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No

license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned

in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents in life supportdevices or systems without express

written approval of SGS-THOMSON Microelectonics.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

10/10

型号:	STP19N06FI
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Obsolete
零件包装代码：	TO-220AB
包装说明：	ISOWATT220, 3 PIN
针数：	3
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5.68
雪崩能效等级（Eas）：	76 mJ
外壳连接：	ISOLATED
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	13 A
最大漏极电流 (ID)：	13 A
最大漏源导通电阻：	0.1 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	35 W
最大脉冲漏极电流 (IDM)：	76 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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