STP20N20各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

STP20N20

STF20N20 - STD20N20

N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK

LOW GATE CHARGE STripFET™ II MOSFET

Table 1: General Features

Figure 1: Package

TYPE

V

R

I

d

P

TOT

DSS

DS(on)

STD20N20

STF20N20

STP20N20

200 V

< 0.125 Ω

18 A

90 W

25 W

90 W

■ TYPICAL R (on) = 0.10 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ LOW GATE CHARGE

DS

3

2

1

TO-220FP

TO-220

■ 100% AVALANCHE TESTED

DESCRIPTION

3

This MOSFET series realized with STMicroelec-

tronics unique STripFET process has specifically

been designed to minimize input capacitance and

gate charge. It is therefore suitable as primary

switch in advanced high-efficiency isolated DC-DC

converters.

1

DPAK

Figure 2: Internal Schematic Diagram

APPLICATIONS

■ HIGH CURRENT SWITCHING

APPLICATIONS

■ HIGH EFFICIENCY DC-DC CONVERTERS

■ PRIMARY SIDE SWITCH

Table 2: Order Codes

SALES TYPE

STD20N20T4

STF20N20

MARKING

D20N20

F20N20

P20N20

PACKAGE

DPAK

PACKAGING

TAPE & REEL

TUBE

TO-220FP

TO-220

STP20N20

TUBE

Rev. 3

January 2005

1/13

STP20N20 - STF20N20 - STD20N20

Table 3: Absolute Maximum ratings

Symbol

Parameter

Value

Unit

TO-220/DPAK

TO-220FP

V

Drain-source Voltage (V = 0)

200

± 20

18

V

DS

GS

V

DGR

Drain-gate Voltage (R = 20 kΩ)

GS

V

GS

V

Gate- source Voltage

I

Drain Current (continuous) at T = 25°C

A

D

C

I

Drain Current (continuous) at T = 100°C

11

A

C

I

( )

72

A

Drain Current (pulsed)

DM

P

TOT

Total Dissipation at T = 25°C

90

25

W

C

Derating Factor

0.72

0.2

W/°C

V/ns

dv/dt (1)

Peak Diode Recovery voltage slope

15

T

stg

Operating Junction Temperature

Storage Temperature

j

-50 to 150

°C

( ) Pulse width limited by safe operating area

(1) I ≤ 18A, di/dt ≤ 400A/µs, V ≤ V

(BR)DSS

SD

DD

Table 4: Thermal Data

TO-220

1.38

DPAK

1.38

TO-220FP

Rthj-case

Rthj-amb

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

5

°C/W

°C

62.5

50(#)

300

62.5

T

Maximum Lead Temperature For Soldering

Purpose

l

(#) When mounted on 1inch² FR-4, 2 Oz copper board.

Table 5: Avalanche Characteristics

Symbol

Parameter

Max Value

Unit

I

Avalanche Current, Repetitive or Not-Repetitive

18

A

AR

(pulse width limited by T max)

j

E

Single Pulse Avalanche Energy

110

mJ

AS

(starting T = 25 °C, I = I , V = 50 V)

j

D

AR

DD

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 6: On/Off

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V

Drain-source

I

D

= 1 mA, V = 0

200

V

(BR)DSS

GS

Breakdown Voltage

Zero Gate Voltage

I

V

= Max Rating

= Max Rating, T = 125 °C

1

10

µA

DSS

DS

Drain Current (V = 0)

GS

DS

C

I

Gate-body Leakage

V

GS

= ± 20V

±100

nA

GSS

Current (V = 0)

DS

V

= V , I = 250 µA

2

3

4

V

Gate Threshold Voltage

GS(th)

DS

GS

D

R

Static Drain-source On

Resistance

= 10V, I = 10 A

0.10

0.125

Ω

DS(on)

GS

D

2/13

STP20N20 - STF20N20 - STD20N20

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

g

(1)

V

= 25 V I = 10 A

13

S

Forward Transconductance

fs

DS

, D

C

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

= 25V, f = 1 MHz, V = 0

940

197

30

pF

iss

DS

GS

oss

rss

t

Turn-on Delay Time

Rise Time

Turn-off Delay Time

V

= 100 V, I = 10 A,

15

30

40

10

ns

d(on)

DD

D

t

r

R = 4.7 Ω V = 10 V

G GS

(see Figure 17)

t

d(off)

Fall Time

t

r

Q

V

= 160V, I = 20 A,

= 10V

28

5.6

14.5

39

nC

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

g

DD

D

Q

gs

gd

GS

Q

(see Figure 20)

Table 8: Source Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I

18

72

A

Source-drain Current

Source-drain Current (pulsed)

SD

(2)

I

SDM

V

(1)

I

= 20 A, V = 0

GS

1.6

V

Forward On Voltage

SD

t

rr

= 20 A, di/dt = 100A/µs

155

775

10

ns

nC

A

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

SD

Q

V

= 50V, T = 25°C

rr

DD

j

I

(see Figure 18)

RRM

t

Q

I

V

= 20 A, di/dt = 100A/µs

183

1061

11.6

ns

nC

A

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

rr

SD

= 50V, T = 150°C

rr

DD

j

I

(see Figure 18)

RRM

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area.

3/13

STP20N20 - STF20N20 - STD20N20

Figure 3: Safe Operating Area For TO-220/

DPAK

Figure 6: Thermal Impedance For TO-220/

DPAK

Figure 4: Safe Operating Area For TO-220FP

Figure 7: Thermal Impedance For TO-220FP

Figure 5: Output Characteristics

Figure 8: Transfer Characteristics

4/13

STP20N20 - STF20N20 - STD20N20

Figure 9: Transconductance

Figure 12: Static Drain-source On Resistance

Figure 10: Gate Charge vs Gate-source Voltage

Figure 13: Capacitance Variations

Figure 11: Normalized Gate Threshold Voltage

vs Temperature

Figure 14: Normalized On Resistance vs Tem-

perature

5/13

STP20N20 - STF20N20 - STD20N20

Figure 15: Source-Drain Forward Characteris-

tics

6/13

STP20N20 - STF20N20 - STD20N20

Figure 19: Unclamped Inductive Wafeform

Figure 16: Unclamped Inductive Load Test Cir-

cuit

Figure 17: Switching Times Test Circuit For

Resistive Load

Figure 20: Gate Charge Test Circuit

Figure 18: Test Circuit For Inductive Load

Switching and Diode Recovery Times

7/13

STP20N20 - STF20N20 - STD20N20

TO-220 MECHANICAL DATA

mm.

TYP

inch

TYP.

DIM.

MIN.

4.40

0.61

1.15

0.49

15.25

10

MAX.

4.60

0.88

1.70

0.70

15.75

10.40

2.70

5.15

1.32

6.60

2.72

14

MIN.

0.173

0.024

0.045

0.019

0.60

MAX.

0.181

0.034

0.066

0.027

0.620

0.409

0.106

0.202

0.052

0.256

0.107

0.551

0.154

A

b

b1

c

D

E

0.393

0.094

0.194

0.048

0.244

0.094

0.511

0.137

e

2.40

4.95

1.23

6.20

2.40

13

e1

F

H1

J1

L

L1

L20

L30

øP

Q

3.50

3.93

16.40

28.90

0.645

1.137

3.75

2.65

3.85

2.95

0.147

0.104

0.151

0.116

8/13

STP20N20 - STF20N20 - STD20N20

TO-220FP MECHANICAL DATA

mm.

TYP

inch

TYP.

DIM.

MIN.

4.4

MAX.

4.6

2.7

2.75

0.7

1

MIN.

0.173

0.098

0.017

0.030

0.045

0.195

0.094

0.393

MAX.

0.181

0.106

0.108

0.027

0.039

0.067

0.204

0.106

0.409

A

B

2.5

D

2.5

E

0.45

0.75

1.15

4.95

2.4

F

F1

F2

G

1.7

5.2

2.7

10.4

G1

H

10

L2

L3

L4

L5

L6

L7

Ø

16

0.630

28.6

9.8

2.9

15.9

9

30.6

10.6

3.6

1.126

.0385

0.114

0.626

0.354

0.118

1.204

0.417

0.141

0.645

0.366

0.126

16.4

9.3

3

3.2

L3

L6

L7

1 2 3

L4

L5

L2

9/13

STP20N20 - STF20N20 - STD20N20

TO-252 (DPAK) MECHANICAL DATA

mm

inch

TYP.

DIM.

MIN.

2.20

0.90

0.03

0.64

5.20

0.45

0.48

6.00

6.40

4.40

9.35

TYP.

MAX.

2.40

1.10

0.23

0.90

5.40

0.60

6.20

6.60

4.60

10.10

MIN.

0.087

0.035

0.001

0.025

0.204

0.018

0.019

0.236

0.252

0.173

0.368

MAX.

0.094

0.043

0.009

0.035

0.213

0.024

0.244

0.260

0.181

0.398

A

A1

A2

B

B2

C

C2

D

E

G

H

L2

L4

V2

0.8

0.031

0.60

0^o

1.00

8^o

0.024

0^o

0.039

0^o

P032P_B

10/13

STP20N20 - STF20N20 - STD20N20

TUBE SHIPMENT (no suffix)*

DPAK FOOTPRINT

All dimensions

are in millimeters

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

REEL MECHANICAL DATA

mm

MIN. MAX. MIN. MAX.

330 12.992

inch

DIM.

A

B

C

D

G

N

T

1.5

12.8

20.2

16.4

50

0.059

13.2 0.504 0.520

0.795

18.4 0.645 0.724

1.968

22.4

0.881

BASE QTY

BULK QTY

2500

TAPE MECHANICAL DATA

2500

mm

MIN. MAX. MIN. MAX.

6.8 0.267 0.275

10.4 10.6 0.409 0.417

12.1 0.476

inch

DIM.

A0

B0

B1

D

7

1.5

1.6 0.059 0.063

0.059

D1

E

1.65 1.85 0.065 0.073

7.4 7.6 0.291 0.299

2.55 2.75 0.100 0.108

F

K0

P0

P1

P2

R

3.9

7.9

1.9

40

4.1 0.153 0.161

8.1 0.311 0.319

2.1 0.075 0.082

1.574

W

15.7

16.3 0.618 0.641

* on sales type

11/13

STP20N20 - STF20N20 - STD20N20

Table 9: Revision History

Date

Revision

Description of Changes

06-Dec-2004

07-Dec-2004

12-Jan-2005

1

2

3

Data Brief

First Revision

Final datasheet

12/13

STP20N20 - STF20N20 - STD20N20

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

All other names are the property of their respective owners

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

13/13

型号:	STP20N20
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	STMICROELECTRONICS
零件包装代码：	TO-220AB
包装说明：	TO-220, 3 PIN
针数：	3
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5.73
Is Samacsys：	N
雪崩能效等级（Eas）：	110 mJ
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	200 V
最大漏极电流 (Abs) (ID)：	18 A
最大漏极电流 (ID)：	18 A
最大漏源导通电阻：	0.125 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	90 W
最大脉冲漏极电流 (IDM)：	72 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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