SUT509EF各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

SUT509EF

Semiconductor

NPN/PNP Epitaxial Planar Silicon Transistor

Description

• General purpose transistor

Feature

• Both 2SA1980 chip and 2SC5343 chip in SOT-563F package

Ordering Information

Type NO.

Marking

Package Code

SUT509EF

3X

SOT-563F

Outline Dimensions

unit : mm

3

2

1

Tr1

Tr2

4

5

6

PIN Connections

1. Emitter 1

2. Base 1

3. Collector 2

4. Emitter 2

5. Base 2

6. Collector 1

KST-4013-001

1

SUT509EF

Absolute maximum ratings (Tr1, Tr2)

Ta=25°C

Ratings

Characteristic

Symbol

Unit

Tr1

Tr2

-50

-5

Collector-Base voltage

Collector-Emitter voltage

Emitter-base voltage

Collector current

V_CBO

V_CEO

V_EBO

I_C

60

50

5

V

150

-150

mA

mW

°C

Collector dissipation

Junction temperature

Storage temperature range

P_C

100

150

T_j

T_stg

-55~150

°C

Electrical Characteristics (Tr1 : NPN)

Ta=25°C

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

I_C=100µA, I_E=0

60

50

5

-

V

I_C=1mA, I_B=0

-

V

I_E=10µA, I_C=0

V_CB=60V, I_E=0

V_EB=5V, I_C=0

-

V

-

0.1

700

0.25

µA

-

Emitter cut-off current

I_EBO

-

DC current gain

h_FE

V_CE=6V, I_C=2mA

I_C=100mA, I_B=10mA

70

-

Collector-Emitter saturation voltage

V_CE(sat)

V

V_CE=10V, I_C=1mA,

f=100MHz

Transition frequency

f_T

80

-

MHz

pF

Collector output capacitance

C_ob

V_CB=10V, I_E=0, f=1MHz

2

3.5

Electrical Characteristics (Tr2 : PNP)

Ta=25°C

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

I_C=-100µA, I_E=0

I_C=-1mA, I_B=0

Min. Typ. Max. Unit

-50

-5

-

V

-

V

I_E=-10µA, I_C=0

-

V

V_CB=-50V, I_E=0

-0.1

400

-0.3

µA

-

Emitter cut-off current

I_EBO

V_EB=-5V, I_C=0

-

DC current gain

h_FE

V_CE=-6V, I_C=-2mA

I_C=-100mA, I_B=-10mA

120

-

Collector-Emitter saturation voltage

V_CE(sat)

V

V_CE=-10V, I_C=-1mA,

f=100MHz

Transition frequency

f_T

80

-

MHz

pF

Collector output capacitance

C_ob

V_CB=-10V, I_E=0, f=1MHz

4

7

KST-4013-001

2

SUT509EF

Electrical Characteristic Curves

Tr1 : NPN

Fig. 2 I_C-V_CE

Fig. 1 I_C-V_BE

Fig. 3 h_FE-I_C

Fig. 4 V_CE(sat)-I_C

Tr2 : PNP

Fig. 1 I_C-V_BE

Fig. 2 I_C-V_CE

KST-4013-001

3

SUT509EF

Electrical Characteristic Curves

Fig. 3 h_FE-I_C

Fig. 4 V_CE(sat)-I_C

KST-4013-001

4

SUT509EF

These AUK products are intended for usage in general electronic equipments(Office and

communication equipment, measuring equipment, domestic electrification, etc.).

Please make sure that you consult with us before you use these AUK products in equipm-

ents which require high quality and/or reliability, and in equipments which could have

major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic

signal, combustion central, all types of safety device, etc.).

AUK cannot accept liability to any damage which may occur in case these AUK products

were used in the mentioned equipments without prior consultation with AUK.

KST-4013-001

5

电子百科

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