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    产品型号SW730的Datasheet PDF文件预览

    SAMWIN  
    SW730  
    N-channel MOSFET  
    BVDSS : 400V  
    TO-220  
    Features  
    ID  
    : 6.5A  
    ■ High ruggedness  
    RDS(ON) : 1.0ohm  
    ■ RDS(ON) (Max 1.0Ω)@VGS=10V  
    ■ Gate Charge (Typ 32nC)  
    ■ Improved dv/dt Capability  
    ■ 100% Avalanche Tested  
    1
    2
    2
    3
    1
    1. Gate 2. Drain 3. Source  
    General Description  
    3
    This power MOSFET is produced with advanced VDMOS technology of SAMWIN.  
    This technology enable power MOSFET to have better characteristics, such as fast  
    switching time, low on resistance, low gate charge and especially excellent avalanche  
    characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a  
    electronic ballast, and also low power switching mode power appliances.  
    Order Codes  
    Item  
    1
    Sales Type  
    SW P 730  
    Marking  
    SW730  
    Package  
    TO-220  
    Packaging  
    TUBE  
    Absolute maximum ratings  
    Symbol  
    Parameter  
    Value  
    Unit  
    VDSS  
    ID  
    Drain to Source Voltage  
    400  
    6.5  
    V
    A
    Continuous Drain Current (@TC=25oC)  
    Continuous Drain Current (@TC=100oC)  
    Drain current pulsed  
    3.8  
    A
    IDM  
    VGS  
    EAS  
    (note 1)  
    26  
    A
    Gate to Source Voltage  
    ± 30  
    450  
    V
    Single pulsed Avalanche Energy  
    Repetitive Avalanche Energy  
    Peak diode Recovery dv/dt  
    Total power dissipation (@TC=25oC)  
    Derating Factor above 25oC  
    (note 2)  
    (note 1)  
    (note 3)  
    mJ  
    mJ  
    V/ns  
    W
    EAR  
    dv/dt  
    9.2  
    5.3  
    92  
    PD  
    TSTG, TJ  
    TL  
    0.74  
    -55 ~ + 150  
    W/oC  
    oC  
    Operating Junction Temperature & Storage Temperature  
    Maximum Lead Temperature for soldering  
    purpose, 1/8 from Case for 5 seconds.  
    300  
    oC  
    Thermal characteristics  
    Value  
    Typ.  
    Symbol  
    Parameter  
    Unit  
    Min.  
    Max.  
    1.35  
    Rthjc  
    Rthcs  
    Rthja  
    Thermal resistance, Junction to case  
    Thermal resistance, Case to Sink  
    oC/W  
    oC/W  
    oC/W  
    0.5  
    Thermal resistance, Junction to ambient  
    62.5  
    Mar. 2011. Rev. 2.0  
    Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
    1/7  
    SAMWIN  
    SW730  
    Electrical characteristic ( TC = 25oC unless otherwise specified )  
    Symbol  
    Parameter  
    Test conditions  
    Min.  
    Typ.  
    Max. Unit  
    Off characteristics  
    BVDSS  
    Drain to source breakdown voltage  
    VGS=0V, ID=250uA  
    400  
    -
    -
    -
    -
    V
    ΔBVDSS Breakdown voltage temperature  
    ID=250uA, referenced to 25oC  
    0.54  
    V/oC  
    / ΔTJ  
    coefficient  
    VDS=400V, VGS=0V  
    VDS=320V, TC=125oC  
    VGS=30V, VDS=0V  
    VGS=-30V, VDS=0V  
    -
    -
    -
    -
    -
    -
    -
    -
    1
    uA  
    uA  
    nA  
    nA  
    IDSS  
    Drain to source leakage current  
    20  
    100  
    -100  
    Gate to source leakage current, forward  
    Gate to source leakage current, reverse  
    IGSS  
    On characteristics  
    VGS(TH) Gate threshold voltage  
    RDS(ON) Drain to source on state resistance  
    Dynamic characteristics  
    VDS=VGS, ID=250uA  
    VGS=10V, ID = 3.25A  
    2.0  
    -
    4.0  
    1.0  
    V
    0.8  
    Ω
    Ciss  
    Coss  
    Crss  
    td(on)  
    tr  
    Input capacitance  
    570  
    160  
    30  
    750  
    215  
    40  
    Output capacitance  
    Reverse transfer capacitance  
    Turn on delay time  
    Rising time  
    VGS=0V, VDS=25V, f=1MHz  
    pF  
    ns  
    28  
    36  
    74  
    96  
    VDS=200V, ID=6.5A, RG=25Ω  
    td(off)  
    tf  
    Turn off delay time  
    Fall time  
    128  
    30  
    230  
    50  
    Qg  
    Total gate charge  
    Gate-source charge  
    Gate-drain charge  
    32  
    42  
    Qgs  
    Qgd  
    VDS=320V, VGS=10V, ID=6.5A  
    4
    nC  
    10  
    Source to drain diode ratings characteristics  
    Symbol  
    Parameter  
    Continuous source current  
    Pulsed source current  
    Test conditions  
    Min.  
    Typ.  
    Max. Unit  
    IS  
    -
    -
    -
    -
    -
    -
    -
    6.5  
    26  
    1.5  
    -
    A
    A
    Integral reverse p-n Junction  
    diode in the MOSFET  
    ISM  
    VSD  
    Diode forward voltage drop.  
    Reverse recovery time  
    IS=6.5A, VGS=0V  
    -
    V
    Trr  
    320  
    1.46  
    ns  
    uC  
    IS=6.5A, VGS=0V,  
    dIF/dt=100A/us  
    Qrr  
    Breakdown voltage temperature  
    -
    ※. Notes  
    1.  
    2.  
    3.  
    4.  
    5.  
    Repeatitive rating : pulse width limited by junction temperature.  
    L = 19.4mH, IAS = 6.5A, VDD = 50V, RG=50Ω, Starting TJ = 25oC  
    ISD ≤ 6.5A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC  
    Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%  
    Essentially independent of operating temperature.  
    Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
    2/7  
    SAMWIN  
    SW730  
    Fig. 1. On-state characteristics  
    Fig. 2. Transfer characteristics  
    VGS  
    Top :  
    15.0 V  
    10.0 V  
    8.0 V  
    7.0 V  
    6.0 V  
    5.5 V  
    5.0 V  
    101  
    101  
    Bottom : 4.5 V  
    150oC  
    100  
    25oC  
    -55oC  
    100  
    ،
    ط
     Notes :  
    1. 250¥
    ى
    s Pulse Test  
    2. TC = 25،
    ة
     
    ،
    ط
     Notes :  
    1. VDS = 30V  
    2. 250¥
    ى
    s Pulse Test  
    10-1  
    100  
    101  
    2
    3
    4
    5
    6
    7
    8
    9
    10  
    VDS, Drain-Source Voltage [V]  
    VGS, Gate-Source Voltage [V]  
    Fig. 3. On-resistance variation vs.  
    Fig. 4. On state current vs.  
    diode forward voltage  
    drain current and gate voltage  
    3.0  
    2.5  
    2.0  
    1.5  
    1.0  
    0.5  
    0.0  
    101  
    VGS = 10V  
    100  
    150،
    ة
     
    25،
    ة
     
    VGS = 20V  
    ،
    ط
     Notes :  
    1. VGS = 0V  
    ،
    ط
     Note : TJ = 25،
    ة
     
    2. 250¥
    ى
    s Pulse Test  
    10-1  
    0.2  
    0
    2
    4
    6
    8
    10  
    12  
    14  
    16  
    0.4  
    0.6  
    0.8  
    1.0  
    1.2  
    1.4  
    1.6  
    ID, Drain Current [A]  
    VSD, Source-Drain voltage [V]  
    Fig. 5. Capacitance characteristics  
    (Non-Repetitive)  
    Fig. 6. Gate charge characteristics  
    Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
    3/7  
    SAMWIN  
    SW730  
    Fig 7. Breakdown Voltage Variation  
    vs. Junction Temperature  
    Fig. 8. On resistance variation  
    vs. junction temperature  
    3.0  
    2.5  
    2.0  
    1.5  
    1.0  
    0.5  
    0.0  
    1.2  
    1.1  
    1.0  
    ،
    ط
     Notes :  
    1. VGS = 0 V  
    ،
    ط
     Notes :  
    1. VGS = 10 V  
    0.9  
    2. ID = 250 ¥
    ى
    A  
    2. ID = 3 A  
    0.8  
    -100  
    -100  
    -50  
    0
    50  
    100  
    150  
    200  
    -50  
    0
    50  
    100  
    150  
    200  
    TJ, Junction Temperature [oC]  
    TJ, Junction Temperature [oC]  
    Fig. 9. Maximum drain current vs.  
    case temperature.  
    Fig. 10. Maximum safe operating area  
    102  
    7
    6
    5
    4
    3
    2
    1
    0
    Operation in This Area  
    is Limited by R DS(on)  
    100 s  
    101  
    1 ms  
    10 ms  
    DC  
    100  
    ،
    ط
     Notes :  
    1. TC = 25 o  
    C
    2. TJ = 150 o  
    C
    3. Single Pulse  
    10-1  
    10-1  
    100  
    101  
    102  
    103  
    25  
    50  
    75  
    100  
    125  
    150  
    TC, Case Temperature [،
    ة
    ]  
    VDS, Drain-Source Voltage [V]  
    Fig. 11. Transient thermal response curve  
    100  
    D=0.5  
    ،
    ط
     Notes :  
    1. Z¥èJC(t) = 1.28 ،
    ة
    /W Max.  
    0.2  
    0.1  
    2. Duty Factor, D=t1/t2  
    3. TJM - TC = PDM * Z¥èJC(t)  
    10-1  
    0.05  
    0.02  
    0.01  
    single pulse  
    10-2  
    10-5  
    10-4  
    10-3  
    10-2  
    10-1  
    100  
    101  
    t1, Square Wave Pulse Duration [sec]  
    Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
    4/7  
    SAMWIN  
    SW730  
    Fig. 12. Gate charge test circuit & waveform  
    VGS  
    Same type  
    as DUT  
    QG  
    VDS  
    QGD  
    QGS  
    DUT  
    VGS  
    1mA  
    Charge  
    Fig. 13. Switching time test circuit & waveform  
    VDS  
    90%  
    RL  
    VDS  
    RG  
    VDD  
    10%  
    10%  
    td(on)  
    VIN  
    tf  
    td(off)  
    10VIN  
    DUT  
    tr  
    tON  
    tOFF  
    Fig. 14. Unclamped Inductive switching test circuit & waveform  
    BVDSS  
    1
    2
    L X IAS2 X  
    EAS =  
    BVDSS - VDD  
    L
    BVDSS  
    IAS  
    IAS  
    VDS  
    RG  
    VDD  
    ID(t)  
    DUT  
    10VIN  
    VDS(t)  
    time  
    tp  
    Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
    5/7  
    SAMWIN  
    SW730  
    Fig. 15. Peak diode recovery dv/dt test circuit & waveform  
    DUT  
    10V  
    +
    -
    VGS (DRIVER)  
    VDS  
    L
    di/dt  
    IS  
    IS (DUT)  
    IRM  
    VDS  
    RG  
    Diode reverse current  
    VDD  
    Diode recovery dv/dt  
    Same type  
    as DUT  
    10VGS  
    VDD  
    VDS (DUT)  
    VF  
    *. dv/dt controlled by RG  
    *. Is controlled by pulse period  
    Body diode forward voltage drop  
    Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
    6/7  
    SAMWIN  
    SW730  
    REVISION HISTORY  
    Revision No.  
    Changed Characteristics  
    Responsible  
    Date  
    Issuer  
    REV 1.0  
    REV 2.0  
    Origination, First Release  
    Alice Nie  
    2007.12.05  
    XZQ  
    Updated the format of datasheet and added  
    Order Codes.  
    Alice Nie  
    2011.03.24  
    XZQ  
    WWW.SEMIPOWER.COM.CN  
    西安芯派电子科技有限公司  
    深圳市南方芯源科技有限公司  
    地址：西安市高新区高新一路25号创新大厦MF6  
    电话：029 - 88253717 传真：029 - 88251977  
    地址：深圳市福田区天安数码城时代大厦A座2005  
    电话：0755 - 83981818 传真：0755 - 83476838  
    Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
    7/7  
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