T..RIA Series
Bulletin I27105 rev. B 02/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage VDRM/VRRM, maximum repetitive VRSM, maximum non-repetitive IDRM/IRRM max.
Code
peak reverse voltage
peak reverse voltage
@ 25°C
V
V
µA
10
20
100
200
400
600
800
1000
1200
150
300
500
700
900
1100
1300
T50RIA
T70RIA
T90RIA
40
60
80
100
120
100
On-state Conduction
Parameter
T50RIA
50
T70RIA
70
T90RIA Units Conditions
IT(AV) Max. average on-state current
90
A
180° conduction, half sine wave
@ Case temperature
70
80
70
70
°C
A
IT(RMS) Max. RMS on-state current
110
141
ITSM Maximum peak, one-cycle
on-state, non-repetitive
surge current
1310
1370
1660
1740
1780
1870
A
t = 10ms No voltage
t = 8.3ms reapplied
1100
1150
8550
7800
6050
1400
1460
1500
1570
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sine half wave,
I2t
Maximum I2t for fusing
13860
12650
9800
15900
14500
11250
A2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
t = 10ms 100% VRRM
5520
85500
0.97
8950
138500
0.77
10270
159100
0.78
t = 8.3ms reapplied
A2√s t = 0.1 to 10ms, no voltage reapplied
I2√t
Maximum I2√t for fusing
VT
(TO)1
Low level value of threshold
voltage
V
(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
VT
High level value of threshold
voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
1.13
4.1
0.88
3.6
0.88
2.9
(I > π x IT(AV)), @ TJ max.
(TO)2
r
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
(I > π x IT(AV)), @ TJ max.
t1
r
3.3
3.2
2.6
t2
VTM Maximum on-state voltage drop
1.60
1.55
1.55
V
ITM = π x IT(AV), TJ = 25°C., tp = 400µs square
2
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS)
)
IH
IL
Maximum holding current
Maximum latching current
200
400
mA Anode supply = 6V initial IT = 30A, TJ = 25°C
mA Anode supply = 6V resistive load = 10Ω
gate pulse: 10V, 100µs, TJ = 25°C
Switching
Parameter
T50RIA
T70RIA
0.9
T90RIA Units Conditions
tgd
Typical turn-on time
µs
TJ = 25oC Vd = 50% VDRM, ITM = 50 A
Ig = 500mA, tr <= 0.5, tp >= 6µs
trr
tq
Typical reverse recovery time
Typical turn-off time
3.0
µs
µs
TJ=125°C, ITM = 50A tp = 300µs di/dt =10A/µs
TJ= TJ max., ITM = 50A, tp = 300µs,
110
-di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM
2
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