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产品型号T50RIA的Datasheet PDF文件预览

Bulletin I27105 rev. B 02/02  
T..RIA SERIES  
Power Modules  
MEDIUM POWER PHASE CONTROL THYRISTORS  
Features  
Electrically isolated base plate  
Types up to 1200 V  
RRM  
50 A  
70 A  
90 A  
3500 V  
isolating voltage  
RMS  
Simplified mechanical designs,  
rapid assembly  
High surge capability  
Large creepage distances  
UL E78996 approved  
Description  
These series of T-modules are inteded for general  
purpose applications such as battery chargers,  
welders and plating equipment, regulated power  
supplies and temperature and speed control circuits.  
The semiconductors are electrically isolated from the  
metal base, allowing common heatsinks and compact  
assemblies to be built.  
Major Ratings and Characteristics  
Parameters T50RIA T70RIA T90RIA Units  
I
50  
70  
70  
70  
90  
70  
A
T(AV)  
@T  
oC  
C
I
I
80  
110  
1660  
141  
1780  
A
A
T(RMS)  
@50Hz  
@60Hz  
@50Hz  
@60Hz  
1310  
1370  
8550  
7800  
85500  
TSM  
1740  
1870  
A
I2t  
13860  
15900  
14500  
159100  
A2s  
A2s  
12650  
2
2
I t  
138500  
100 to 1200  
-40 to125  
A s  
V
T
/V  
V
DRM RRM  
oC  
J
www.irf.com  
1
T..RIA Series  
Bulletin I27105 rev. B 02/02  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Type number  
Voltage VDRM/VRRM, maximum repetitive VRSM, maximum non-repetitive IDRM/IRRM max.  
Code  
peak reverse voltage  
peak reverse voltage  
@ 25°C  
V
V
µA  
10  
20  
100  
200  
400  
600  
800  
1000  
1200  
150  
300  
500  
700  
900  
1100  
1300  
T50RIA  
T70RIA  
T90RIA  
40  
60  
80  
100  
120  
100  
On-state Conduction  
Parameter  
T50RIA  
50  
T70RIA  
70  
T90RIA Units Conditions  
IT(AV) Max. average on-state current  
90  
A
180° conduction, half sine wave  
@ Case temperature  
70  
80  
70  
70  
°C  
A
IT(RMS) Max. RMS on-state current  
110  
141  
ITSM Maximum peak, one-cycle  
on-state, non-repetitive  
surge current  
1310  
1370  
1660  
1740  
1780  
1870  
A
t = 10ms No voltage  
t = 8.3ms reapplied  
1100  
1150  
8550  
7800  
6050  
1400  
1460  
1500  
1570  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
Sine half wave,  
I2t  
Maximum I2t for fusing  
13860  
12650  
9800  
15900  
14500  
11250  
A2s t = 10ms No voltage Initial TJ = TJ max.  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
5520  
85500  
0.97  
8950  
138500  
0.77  
10270  
159100  
0.78  
t = 8.3ms reapplied  
A2s t = 0.1 to 10ms, no voltage reapplied  
I2t  
Maximum I2t for fusing  
VT  
(TO)1  
Low level value of threshold  
voltage  
V
(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.  
VT  
High level value of threshold  
voltage  
Low level value on-state  
slope resistance  
High level value on-state  
slope resistance  
1.13  
4.1  
0.88  
3.6  
0.88  
2.9  
(I > π x IT(AV)), @ TJ max.  
(TO)2  
r
m(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.  
(I > π x IT(AV)), @ TJ max.  
t1  
r
3.3  
3.2  
2.6  
t2  
VTM Maximum on-state voltage drop  
1.60  
1.55  
1.55  
V
ITM = π x IT(AV), TJ = 25°C., tp = 400µs square  
2
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS)  
)
IH  
IL  
Maximum holding current  
Maximum latching current  
200  
400  
mA Anode supply = 6V initial IT = 30A, TJ = 25°C  
mA Anode supply = 6V resistive load = 10Ω  
gate pulse: 10V, 100µs, TJ = 25°C  
Switching  
Parameter  
T50RIA  
T70RIA  
0.9  
T90RIA Units Conditions  
tgd  
Typical turn-on time  
µs  
TJ = 25oC Vd = 50% VDRM, ITM = 50 A  
Ig = 500mA, tr <= 0.5, tp >= 6µs  
trr  
tq  
Typical reverse recovery time  
Typical turn-off time  
3.0  
µs  
µs  
TJ=125°C, ITM = 50A tp = 300µs di/dt =10A/µs  
TJ= TJ max., ITM = 50A, tp = 300µs,  
110  
-di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM  
2
www.irf.com  
T..RIA Series  
Bulletin I27105 rev. B 02/02  
Blocking  
Parameter  
T50RIA  
T70RIA  
15  
T90RIA Units Conditions  
mA TJ = TJ = TJ max.  
IRRM Maximum peak reverse and  
IDRM off-state leakage current  
VINS RMS isolation voltage  
3500  
500  
V
50Hz, circuit to base, all terminals shorted,  
J = 25°C, t = 1s  
V/µs TJ = TJ max., linear to 80% rated VDRM (1)  
T
dv/dt Critical rate of rise of off-state  
voltage  
(1) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. T90RIA80S90  
Triggering  
Parameter  
T50RIA  
T70RIA  
T90RIA Units Conditions  
PGM Max. peak gate power  
10  
2.5  
2.5  
10  
12  
3.0  
3.0  
10  
12  
3.0  
3.0  
10  
W
W
A
tp5ms, TJ =TJ max.  
f=50Hz,TJ =TJ max.  
tp5ms, TJ =TJ max.  
PG(AV) Max. average gate power  
IGM  
Max. peak gate current  
-VGT Max.peak negative  
gate voltage  
V
VGT  
Max. requiredDCgate  
voltage to trigger  
4.0  
2.5  
1.5  
250  
100  
50  
4.0  
2.5  
1.5  
270  
120  
60  
4.0  
2.5  
1.5  
270  
120  
60  
V
TJ =-40°C  
TJ =25°C  
TJ =TJmax.  
TJ =-40°C  
Anodesupply=6V,resistive  
load;Ra=1Ω  
IGT  
Max. requiredDCgate  
current to trigger  
Anodesupply=6V,resistive  
load;Ra=1Ω  
mA TJ =25°C  
TJ =TJmax.  
VGD Max. gate voltage  
that will not trigger  
0.2  
0.2  
0.2  
V
@TJ =TJ max., ratedVDRMapplied  
IGD  
Max. gate current  
5.0  
6.0  
6.0  
mA  
that will not trigger  
di/dt Max. rateofriseof  
turned-on current  
200  
180  
A/µs VD=0.67ratedVDRM,ITM=2xrateddi/dt  
Ig=400mAforT50RIAandIg=500mAfor  
160  
150  
T70RIA&T90RIA;tr<0.5µs,tp>=6µs  
For repetitive value use 40% non-repetitive  
PerJEDECstd. RS397,5.2.2.6  
Thermal and Mechanical Specifications  
Parameter  
T50RIA  
T70RIA  
T90RIA Units Conditions  
°C  
TJ  
Max. junction operating  
temperature range  
Max. storage temperature  
range  
-40 to 125  
Tstg  
-40 to 150  
0.50  
°C  
RthJC Max. thermal resistance,  
junction to case  
RthCS Max. thermal resistance,  
case to heatsink  
0.65  
0.38  
K/W DC operation, per junction  
K/W Mounting surface smooth, flat and greased  
0.2  
T
Mounting  
torque ± 10%  
Approximate weight  
Case style  
to heatsink  
terminals  
1.3 ± 10%  
3 ± 10%  
54  
Nm M3.5 mounting screws (2)  
non lubricated  
threads  
M5 screw terminals  
wt  
g
See outline table  
T type  
D-56  
(2) A mounting compound is recommended and thetorque should be rechecked after a period of 3 hoursto allow for the  
spread of the compound.  
3
www.irf.com  
T..RIA Series  
Bulletin I27105 rev. B 02/02  
R Conduction (per Junction)  
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)  
Sinusoidal conduction @ TJ max.  
Rectangular conduction @ TJ max.  
Devices  
Units  
K/W  
180o  
0.08  
0.07  
0.05  
120o  
0.10  
0.08  
0.06  
90o  
60o  
30o  
180o  
0.06  
0.05  
0.04  
120o  
0.10  
0.08  
0.06  
90o  
60o  
30o  
T50RIA  
T70RIA  
T90RIA  
0.13  
0.10  
0.08  
0.19  
0.14  
0.12  
0.31  
0.24  
0.20  
0.14  
0.11  
0.09  
0.20  
0.15  
0.12  
0.32  
0.24  
0.20  
Ordering Information Table  
Circuit configuration **  
Device Code  
T
50 RIA 120  
G
2
1
3
4
1
2
3
4
-
-
-
-
Module type  
Current rating  
Circuit configuration **  
Voltage code : code x 10 = V  
RRM  
Outline Table  
+
-
All dimensions in millimeters (inches)  
4
www.irf.com  
T..RIA Series  
Bulletin I27105 rev. B 02/02  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
T 50R IA.. S eries  
T 50R IA.. S eries  
(DC) = 0.65 K/W  
R
(DC) = 0.65 K/W  
R
thJC  
thJC  
Conduction Angle  
Conduction P eriod  
80  
80  
30  
70  
70  
90  
60  
90  
60  
30  
120  
60  
120  
40  
60  
30  
180  
DC  
70  
180  
50  
50  
50  
0
10  
20  
40  
50 60  
80  
0
10  
20  
30  
60  
Average On-state Current (A)  
Average On-s tate Current (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
80  
180  
120  
90  
60  
30  
t
h
S
A
70  
60  
50  
40  
30  
20  
10  
0
R MS Limit  
Conduction Angle  
T 50R IA.. S eries  
5
K
/
W
T
= 125 C  
J
0
10  
Average On-s tate Current (A)  
Fig. 3 - On-state Power Loss Characteristics  
20  
30  
40  
50  
20  
40  
60  
80  
100  
120  
Maximum Allowable Ambient T emperature ( C)  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
R
DC  
180  
120  
90  
60  
30  
=
0
.
0.  
5
K
1
/
W
K
0
/
W
.
7
K
-
/
W
D
el  
t
a
R
R MS Limit  
2
K
/
W
3
K
/
W
Conduction P eriod  
T 50R IA.. S eries  
T
= 125 C  
J
0
10  
20 30  
Average On-s tate Current (A)  
Fig. 4 - On-state Power Loss Characteristics  
40  
50  
60  
70  
80  
20  
40  
60  
80  
100  
120  
Maximum Allowable Ambient T emperature ( C)  
www.irf.com  
5
T..RIA Series  
Bulletin I27105 rev. B 02/02  
1200  
1300  
1200  
1100  
1000  
900  
At Any R ated L oad Condition And With  
Maximum Non R epetitive S urge Current  
Vers us Pulse T rain Duration. Control  
Of Conduction May Not B e Maintained.  
R ated V  
Applied F ollowing S urge.  
R R M  
Initial T = 125 C  
1100  
1000  
900  
J
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
Initial T = 125 C  
J
No Voltage R eapplied  
R ated V  
R eapplied  
R RM  
800  
800  
700  
700  
600  
T 50R IA.. S eries  
T 50RIA.. S eries  
600  
500  
500  
0.01  
1
10  
100  
0.1  
Pulse T rain Duration (s)  
1
Number Of E qual Amplitude H alf Cycle Current P uls es (N)  
Fig. 5 - Maximum Non-Repetitive Surge Current  
Fig. 6 - Maximum Non-Repetitive Surge Current  
1000  
100  
10  
T
T
= 25 C  
J
J
= 125 C  
T 50R IA.. S eries  
1
0.5  
1
1.5  
Ins tantaneous On-s tate Voltage (V)  
Fig. 10 - On-state Voltage Drop Characteristics  
2
2.5  
3
3.5  
4
4.5  
100  
10  
1
R ectangular gate puls e  
a) R ecommended load line for  
rated di/dt : 20V, 30ohms ;  
(1) PGM = 10W, tp = 5ms  
(2) PGM = 20W, tp = 2ms  
(3) PGM = 50W, tp = 1ms  
(4) PGM = 100W, tp = 500  
tr=0.5 s, tp>=6  
s
s
b) R ecommended load line for  
<=30% rated di/dt : 20V, 65ohms  
tr=1 s , tp>=6  
s
(a)  
(b)  
(4)  
(1) (2)  
(3)  
VGD  
IGD  
T 50R IA.. S eries  
1
F requency L imited by PG(AV)  
10 100  
0.1  
0.001  
0.01  
0.1  
1000  
Ins tantaneous Gate Current (A)  
Fig. 9 - Gate Characteristics  
www.irf.com  
6
T..RIA Series  
Bulletin I27105 rev. B 02/02  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
T 70R IA.. S eries  
T 70R IA.. S eries  
(DC) = 0.50 K/W  
R
(DC) = 0.50 K/W  
R
thJC  
thJC  
Conduction Angle  
Conduction Period  
80  
80  
60  
40  
30  
70  
70  
60  
30  
90  
90  
120  
120  
60  
60  
60  
180  
180  
80  
DC  
50  
50  
0
20  
100  
120  
0
10  
20  
30  
40  
50  
60 70  
80  
Average On-s tate Current (A)  
Fig. 13 - Current Ratings Characteristics  
Average On-s tate Current (A)  
Fig. 12 - Current Ratings Characteristics  
100  
180  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
120  
90  
60  
0
.
7
K
/
W
30  
R MS L imit  
Conduction Angle  
T 70R IA.. S eries  
T
= 125 C  
J
0
10  
20  
30  
40  
50  
60  
70  
Maximum Allowable Ambient T emperature ( C)  
Fig. 18 - On-state Power Loss Characteristics  
20  
40  
60  
80  
100  
120  
Average On-s tate Current (A)  
140  
120  
100  
80  
DC  
180  
120  
90  
60  
30  
R
0
.
=
3
K
/
0
.
/
W
1
K
0
/
.
5
W
K
-
W
D
e
l
t
a
R
1
K
/
W
R MS Limit  
60  
1
.
5
K
K
/
W
2
Conduction P eriod  
T 70R IA.. S eries  
/
W
40  
3
5
K
K
/
W
20  
T
= 125 C  
/W  
J
0
0
20  
Average On-s tate Current (A)  
Fig. 15 - On-state Power Loss Characteristics  
40  
60  
80  
100  
120  
20  
40  
60  
80  
100  
120  
Maximum Allowable Ambient T emperature ( C)  
www.irf.com  
7
T..RIA Series  
Bulletin I27105 rev. B 02/02  
1500  
1700  
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
At Any R ated L oad Condition And With  
Maximum Non R epetitive S urge Current  
Vers us Pulse T rain Duration. Control  
Of Conduction May Not B e Maintained.  
R ated V  
Applied F ollowing S urge.  
R R M  
1400  
1300  
1200  
1100  
1000  
900  
Initial T = 125 C  
J
Initial T = 125 C  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
J
No Voltage R eapplied  
R ated V  
R eapplied  
R R M  
800  
T 70R IA.. S eries  
T 70R IA.. S eries  
800  
700  
700  
600  
0.01  
1
10  
100  
0.1  
Puls e T rain Duration (s)  
1
Number Of E qual Amplitude H alf Cycle Current P uls es (N)  
Fig. 16 - Maximum Non-Repetitive Surge Current  
Fig. 17 - Maximum Non-Repetitive Surge Current  
1000  
100  
10  
T
T
= 25 C  
J
J
= 125 C  
T 70R IA.. S eries  
1
0
0.5  
Ins tantaneous On-s tate Voltage (V)  
Fig. 10 - On-state Voltage Drop Characteristics  
1
1.5  
2
2.5  
3
3.5  
4
100  
10  
1
R ectangular gate puls e  
a) R ecommended load line for  
rated di/dt : 20V, 20ohms;  
(1) PGM = 12W, tp = 5ms  
(2) PGM = 30W, tp = 2ms  
(3) PGM = 60W, tp = 1ms  
(4) PGM = 200W, tp = 300  
tr=0.5 s , tp>=6  
s
s
b) R ecommended load line for  
<=30% rated di/dt : 15V, 40ohms  
tr=1 s , tp>=6  
s
(a)  
(b)  
(1) (2)  
(3)  
(4)  
VGD  
IGD  
T 70R IA.., T 90R IA.. S eries F requency Limited by PG(AV)  
0.1 10 100  
0.1  
0.001  
0.01  
1
1000  
Ins tantaneous Gate Current (A)  
Fig. 19 - Gate Characteristics  
www.irf.com  
8
T..RIA Series  
Bulletin I27105 rev. B 02/02  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
T 90R IA.. S eries  
(DC) = 0.38 K/W  
T 90R IA.. S eries  
R
R
(DC) = 0.38 K/W  
thJC  
thJC  
Conduction Angle  
Conduction Period  
80  
80  
30  
70  
70  
90  
60  
90  
120  
180  
60  
120  
60  
60  
30  
180  
DC  
50  
50  
0
20  
40  
Average On-s tate Current (A)  
Fig. 24 - Current Ratings Characteristics  
60  
80 100 120 140 160  
0
20  
40  
60  
80  
100  
Average On-s tate Current (A)  
Fig. 23 - Current Ratings Characteristics  
140  
180  
R
0
.
120  
90  
60  
3
K
120  
=
/
W
0
.
0
.
1
5
K
K
/
W
/
W
100  
30  
-
D
e
l
t
a
R MS Limit  
R
80  
60  
40  
20  
0
Conduction Angle  
T 90R IA S eries  
3
K
/
W
T
= 125 C  
J
0
10 20 30 40 50 60 70 80 90  
Average On-s tate Current (A)  
20  
40  
60  
80  
100  
120  
Maximum Allowable Ambient T emperature ( C)  
Fig. 29 - On-state Power Loss Characteristics  
180  
160  
140  
120  
100  
80  
DC  
180  
120  
90  
60  
30  
0
.
5
K
/
W
0
.
7
K
/
W
1
2
K
/
W
R MS L imit  
60  
Conduction Period  
T 90R IA.. S eries  
40  
K
/
W
20  
T
= 125 C  
J
0
0
20  
Average On-s tate Current (A)  
Fig. 29 - On-state Power Loss Characteristics  
40  
60  
80 100 120 140 160  
20  
40  
60  
80  
100  
120  
Maximum Allowable Ambient T emperature ( C)  
www.irf.com  
9
T..RIA Series  
Bulletin I27105 rev. B 02/02  
1600  
1800  
1700  
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
At Any R ated L oad Condition And With  
Maximum Non R epetitive S urge Current  
Vers us Puls e T rain Duration. Control  
Of Conduction May Not B e Maintained.  
R ated V  
Applied F ollowing S urge.  
RR M  
1500  
1400  
1300  
1200  
1100  
1000  
900  
Initial T = 125 C  
J
Initial T = 125 C  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
J
No Voltage R eapplied  
R ated V  
R eapplied  
R RM  
T 90R IA.. S eries  
T 90R IA.. S eries  
800  
800  
700  
700  
0.01  
1
10  
100  
0.1  
Puls e T rain Duration (s)  
1
Number Of E qual Amplitude H alf Cycle Current P uls es (N)  
Fig. 27 - Maximum Non-Repetitive Surge Current  
Fig. 28 - Maximum Non-Repetitive Surge Current  
1000  
100  
10  
T
T
= 25 C  
J
J
= 125 C  
T 90R IA.. S eries  
1
0
0.5  
1
1.5  
2
2.5  
3
3.5  
Ins tantaneous On-s tate Voltage (V)  
Fig. 21 - On-state Voltage Drop Characteristics  
1
S teady S tate Value  
R
R
R
= 0.65 K/W  
thJC  
thJC  
thJC  
= 0.50 K/W  
= 0.38 K/W  
T 50R IA.. S eries  
T 70R IA.. S eries  
(DC Operation)  
0.1  
T 90R IA.. S eries  
0.01  
0.001  
0.01  
0.1  
1
10  
100  
S quare Wave Puls e Duration (s )  
Fig. 34 - Thermal Impedance Z thJC Characteristics  
www.irf.com  
10  
T..RIA Series  
Bulletin I27105 rev. B 02/02  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 02/02  
www.irf.com  
11  
配单直通车
T50RIA10产品参数
型号:T50RIA10
是否无铅:不含铅
是否Rohs认证:不符合
生命周期:Active
IHS 制造商:VISHAY INTERTECHNOLOGY INC
零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X3
针数:3
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.30.00.80
风险等级:5.17
Is Samacsys:N
其他特性:UL RECOGNIZED
外壳连接:ISOLATED
配置:SINGLE
最大直流栅极触发电流:100 mA
最大直流栅极触发电压:2.5 V
快速连接描述:G
螺丝端子的描述:A-K
最大维持电流:200 mA
JESD-30 代码:R-XUFM-X3
最大漏电流:15 mA
通态非重复峰值电流:1300 A
元件数量:1
端子数量:3
最大通态电流:50000 A
最高工作温度:125 °C
最低工作温度:-40 °C
封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified
最大均方根通态电流:80 A
断态重复峰值电压:100 V
重复峰值反向电压:100 V
子类别:Silicon Controlled Rectifiers
表面贴装:NO
端子形式:UNSPECIFIED
端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCR
Base Number Matches:1
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