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产品型号T850H的Datasheet PDF文件预览

T835H, T850H

Snubberless™

High temperature 8 A Triacs

Main characteristics

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600

35 or 50

Features

TO-220AB

T8xxH-6T

D PAK

■ Medium current Triac

■ 150° C max. T turn-off commutation

T8xxH-6G

■ Low thermal resistance with clip bonding

■ Very high 3 quadrant commutation capability

■ Packages are RoHS (2002/95/EC) compliant

Applications

Especially designed to operate in high power

density or universal motor applications such as

vacuum cleaner and washing machine drum

motor, these 8 A triacs provide a very high

switching capability up to junction temperatures of

150° C.

TO-220AB Insulated

T8xxH-6I

Order codes

The heatsink can be reduced, compared to

traditional triacs, according to the high

performance at given junction temperatures.

Part Numbers

Marking

T835H-6G

T850H-6G

T835H-6G-TR

T850H-6G-TR

T835H-6T

T835H 6G

T850H 6G

T835H 6G

T850H 6G

T835H 6T

T850H 6T

T835H 6I

T850H 6I

Description

Available in through-hole or surface mount

packages, the T835H and T850H triac series are

suitable for general purpose mains power AC

switching.

T850H-6T

T835H-6I

T850H-6I

TM: Snubberless is a trademark of STMicroelectronics

April 2007

Rev 1

1/10

www.st.com

Characteristics

T835H, T850H

Characteristics

Table 1.

Absolute Maximum Ratings

Symbol

Parameter

D²PAK, TO-220AB T_c= 135° C

Value

Unit

I_T(RMS)

RMS on-state current (full sine wave)

TO-220AB Ins

F = 50 Hz

T_c= 125° C

t = 20 ms

Non repetitive surge peak on-state

current (full cycle, T_jinitial = 25° C)

I_TSM

F = 60 Hz

t = 16.7 ms

I t

I t Value for fusing

t_p= 10 ms

A s

Critical rate of rise of on-state current

I_G= 2 x I_GT, t_r≤ 100 ns

dI/dt

F = 120 Hz

T_j= 150° C

T_j= 25° C

A/µs

Non repetitive surge peak off-state

voltage

_DRM/V_RRM

+ 100

V_DSM/V_RSM

t_p= 10 ms

t_p= 20 µs

I_GM

Peak gate current

T_j= 150° C

P_G(AV)

Average gate power dissipation

T_stg

T_j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

° C

Table 2.

Symbol

Electrical Characteristics (T_j= 25° C, unless otherwise specified)

Value

Test Conditions

Quadrant

Unit

T835H

T850H

(1)

I_GT

I - II - III

MAX.

MIN.

V_D= 12 V R_L= 33 Ω

V_GT

1.0

V_GD

V_D= V_DRM, R_L= 3.3 kΩ

0.15

(2)

I_H

I_T= 500 mA

MAX.

I - III

I_L

I_G= 1.2 I_GT

MAX.

110

1500

dV/dt ⁽²⁾

V_D= 67% V_DRM,gate open, T_j= 150° C

MIN.

1000

V/µs

(dI/dt)c ⁽²⁾Without snubber, T_j= 150° C

A/ms

1. minimum I

is guaranted at 20% of I

max.

2. for both polarities of A2 referenced to A1.

2/10

T835H, T850H

Characteristics

Table 3.

Symbol

Static Characteristics

Test Conditions

T_j= 25° C

Value

Unit

(1)

V_T

V_t0

R_d

I_TM= 11 A, t_p= 380 µs

Threshold voltage

MAX.

1.5

0.80

T_j= 150° C

T_j= 25° C

T_j= 150° C

Dynamic resistance

mΩ

µA

V_DRM= V_RRM

3.1

2.5

2.0

I_DRM

(2)

I_RRM

V_D/V_R= 400 V (at peak mains voltage) T_j= 150° C

V_D/V_R= 200 V (at peak mains voltage) T_j= 150° C

1. for both polarities of A2 referenced to A1.

2. t_p= 380 µs.

Table 4.

Symbol

Thermal resistance

Parameter

Value

Unit

D²PAK / TO-220AB

TO-220AB Ins

D²PAK

1.85

3.7

R_th(j-c)

Junction to case (AC)

Junction to ambient

° C/W

S = 1 cm²

R_th(j-a)

TO-220AB / TO-220AB Ins

Figure 1.

Maximum power dissipation versus Figure 2.

RMS on-state current (full cycle)

RMS on-state current versus case

temperature (full cycle)

_T(RMS)(A)

P(W)

TO-220AB/D²PAK

α=180 °

TO-220AB

Insulated

180°

T_C(°C)

I_T(RMS)(A)

100

125

150

3/10

Characteristics

T835H, T850H

Figure 3.

RMS on-state current versus

Figure 4.

Variation of thermal impedance

ambient temperature (Epoxy

printed circuit board FR4,

copper thickness = 35 µm)

versus pulse duration

_T(RMS)(A)

Z_th(°C/W)

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.0E+02

1.0E+01

1.0E+00

1.0E-01

α=180 °

Z_th(j-a)

D²PAK

S_CU=1 cm²

Z_th(j-c)

t_P(s)

T_amb(°C)

1.0E-03

1.0E-02

1.0E-01

1.0E+00 1.0E+01

1.0E+02 1.0E+03

100

125

150

Figure 5.

On-state characteristics (maximum Figure 6.

values)

Surge peak on-state current versus

number of cycles

I_TM(A)

100

_TSM(A)

t=20ms

Non repetitive

T_jinitial=25 °C

One cycle

T_j=150 °C

Repetitive

T_c=125 °C

T_j=25 °C

T_jmax. :

V_t0= 0.80 V

R_d= 52 mΩ

V_TM(V)

2.0 2.5

Number of cycles

100

1000

0.0

0.5

1.0

1.5

3.0

3.5

4.0

4.5

Figure 7.

Non-repetitive surge peak on-state Figure 8.

current for a sinusoidal pulse with

Relative variation of gate trigger

current, holding current and

latching current versus junction

temperature (typical values)

width t < 10 ms and corresponding

value of I t

I_GT, I_H, I_L[T_j] / I_GT, I_H, I_L[T_j=25°C]

_TSM(A), I²t (A²s)

2.5

2.0

1.5

1.0

0.5

0.0

10000

1000

100

Tj initial=25 °C

dI/dt limitation: 50 A/µs

I_GT

I_H& I_L

I_TSM

I²t

t_P(ms)

T_j(°C)

0.01

0.10

1.00

10.00

-40

-20

100

120

140

160

4/10

T835H, T850H

Characteristics

Figure 9.

Relative variation of critical rate of Figure 10. Relative variation of critical rate of

decrease of main current (dI/dt)c

versus reapplied (dV/dt)c

(typical values)

decrease of main current versus

junction temperature

(dI/dt)_c[T_j] / (dI/dt)_c[T_j=150°C]

(dI/dt)_c[ (dV/dt)_c] / Specified (dI/dt)_c

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

(dV/dt)_C(V/µs)

T_j(°C)

0.1

1.0

10.0

100.0

100

125

150

Figure 11. Leakage current versus junction

temperature for different values of

blocking voltage (typical values)

Figure 12. Variation of thermal resistance

junction to ambient versus copper

surface under tab (Epoxy printed

circuit board FR4,

copper thickness = 35 µm)

R_th(j-a)(°C/W)

I_DRM/I_RRM(µA)

1.0E+04

D²PAK

V_DRM=V_RRM=600 V

1.0E+03

1.0E+02

1.0E+01

1.0E+00

1.0E-01

1.0E-02

V_DRM=V_RRM=400 V

V_DRM=V_RRM=200 V

S_CU(cm²)

T_j(°C)

100

125

150

5/10

Ordering information

T835H, T850H

Ordering information

T 8 xx H - 6 y -TR

Triac series

Current

8 = 8 A

Sensitivity

35 = 35 mA

50 = 50 mA

High temperature

Voltage

6 = 600 V

Package

G = D PAK

T = TO-220AB

I = TO-220AB Ins

Packing

Blank = Tube (D PAK, TO-220AB)

-TR = Tape and reel (D PAK)

6/10

T835H, T850H

Package mechanical data

●

Epoxy meets UL94, V0

Recommended torque 0.4 to 0.6 Nm

Table 5.

D PAK dimensions

Dimensions

Millimeters

Ref.

Inches

Min. Typ. Max. Min. Typ. Max.

4.30

4.60 0.169

2.69 0.098

0.23 0.001

0.93 0.027

0.181

0.106

0.009

0.037

A1 2.49

A2 0.03

0.70

B2 1.25 1.40

0.45

C2 1.21

0.048 0.055

0.60 0.017

1.36 0.047

9.35 0.352

10.28 0.393

5.28 0.192

15.85 0.590

1.40 0.050

1.75 0.055

0.024

0.054

0.368

0.405

0.208

0.624

0.055

0.069

8.95

10.00

4.88

2mm min.

FLAT ZONE

15.00

L2 1.27

L3 1.40

0.40

0.016

0°

8°

0°

8°

Figure 13. Footprint (dimensions in mm)

16.90

10.30

5.08

1.30

3.70

8.90

7/10

Package mechanical data

T835H, T850H

Table 6.

TO-220AB and TO-220AB Ins dimensions

Dimensions

Millimeters

Min. Typ. Max. Min. Typ. Max.

Ref.

Inches

15.20

15.90 0.598

0.625

3.75

0.147

a2 13.00

10.00

14.00 0.511

10.40 0.393

0.88 0.024

1.32 0.048

4.60 0.173

0.70 0.019

2.72 0.094

2.70 0.094

6.60 0.244

3.85 0.147

0.551

0.409

0.034

0.051

0.181

0.027

0.107

0.106

0.259

0.151

Ø I

b1 0.61

b2 1.23

4.40

c1 0.49

c2 2.40

2.40

6.20

ØI 3.75

I4 15.80 16.40 16.80 0.622 0.646 0.661

2.65

1.14

2.95 0.104

1.70 0.044

0.116

0.066

2.60

0.102

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com.

8/10

T835H, T850H

Ordering Information

Ordering type

Marking

Package

Weight

Base qty Delivery mode

T8xxH-6G

T8xxH-6G-TR

T8xxH-6T

T8xxH 6G

T8xxH 6T

T8xxH 6I

D²PAK

1.5 g

2.3 g

1000

Tube

Tape and reel

Tube

TO-220AB

TO-220AB Ins

T8xxH-6I

Tube

Revision history

Date

Revision

Description of Changes

17-Apr-2007

First issue

9/10

T835H, T850H

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the

right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any

time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no

liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this

document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products

or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such

third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED

WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED

WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS

OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT

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GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void

any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any

liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

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Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

10/10

T850H相关文章

配单直通车

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T850H-6G产品参数

型号:	T850H-6G
Brand Name：	STMicroelectronics
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	STMICROELECTRONICS
零件包装代码：	D2PAK
包装说明：	SMALL OUTLINE, R-PSSO-G2
针数：	3
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.30.00.80
Factory Lead Time：	11 weeks
风险等级：	5.69
外壳连接：	MAIN TERMINAL 2
配置：	SINGLE
换向电压的临界上升率-最小值：	14 V/us
关态电压最小值的临界上升速率：	1500 V/us
最大直流栅极触发电流：	50 mA
最大直流栅极触发电压：	1 V
最大维持电流：	75 mA
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
最高工作温度：	150 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified
最大均方根通态电流：	8 A
断态重复峰值电压：	600 V
子类别：	TRIACs
表面贴装：	YES
端子面层：	Matte Tin (Sn) - annealed
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30
触发设备类型：	TRIAC
Base Number Matches：	1

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