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TC649

M

PWM Fan Speed Controller with Auto-Shutdown

and FanSense™ Technology

Features

Package Types

• Temperature Proportional Fan Speed for Acoustic

Control and Longer Fan Life

SOIC/PDIP/MSOP

• Efficient PWM Fan Drive

• 3.0V to 5.5V Supply Range:

- Fan Voltage Independent of TC649

Supply Voltage

V

1

2

3

4

8

7

6

5

IN

DD

C

OUT

F

TC649

V

FAULT

SENSE

AS

- Supports any Fan Voltage

GND

• FanSense™ Fault Detection Circuits Protect

Against Fan Failure and Aid System Testing

• Automatic Shutdown Mode for “Green” Systems

• Supports Low Cost NTC/PTC Thermistors

• Space Saving 8-Pin MSOP Package

General Description

The TC649 is a switch mode, fan speed controller for

use with brushless DC fans. Temperature proportional

speed control is accomplished using pulse width mod-

ulation (PWM). A thermistor (or other voltage output

Applications

• Power Supplies

• Computers

• File Servers

• Portable Computers

• Telecom Equipment

• UPSs, Power Amps

• General Purpose Fan Speed Control

temperature sensor) connected to the V input fur-

IN

nishes the required control voltage of 1.25V to 2.65V

(typical) for 0% to 100% PWM duty cycle. The TC649

automatically suspends fan operation when measured

temperature (V ) is below a user programmed

IN

minimum setting (V ). An integrated Start-up Timer

AS

ensures reliable motor start-up at turn-on, coming out

of shutdown mode, auto-shutdown mode or following a

transient fault.

Available Tools

• Fan Controller Demonstration Board (TC642DEMO)

• Fan Controller Evaluation Kit (TC642EV)

In normal fan operation, a pulse train is present at

SENSE (Pin 5). The TC649 features Microchip

TM

Technology’s proprietary FanSense

technology for

increasing system reliability. A missing pulse detector

monitors this pin during fan operation. A stalled, open

or unconnected fan causes the TC649 to trigger its

Start-up Timer once. If the fault persists, the FAULT

output goes low, and the device is latched in its shut-

down mode. See Section 5.0, “Typical Applications”,

for more information and system design guidelines.

The TC649 is available in the 8-pin PDIP, SOIC and

MSOP packages and is available in the industrial and

extended commercial temperature ranges.

2002 Microchip Technology Inc.

DS21449C-page 1

TC649

Functional Block Diagram

TC649

V

IN

V

DD

–

+

PWM

Control

Logic

V

OUT

C

F

3 x T

Timer

PWM

Clock

Generator

–

FAULT

Start-up

Timer

V

AS

+

–

SHDN

Missing

Pulse

Detect

+

V

SHDN

–

SENSE

10k

GND

70mV (typ.)

DS21449C-page 2

2002 Microchip Technology Inc.

TC649

*Stresses above those listed under "Absolute Maximum Rat-

ings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at

these or any other conditions above those indicated in the

operation sections of the specifications is not implied. Expo-

sure to absolute maximum rating conditions for extended peri-

ods may affect device reliability.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage ......................................................... 6V

Input Voltage, Any Pin.... (GND – 0.3V) to (V +0.3V)

DD

Package Thermal Resistance:

PDIP (R ) ............................................125°C/W

θJA

SOIC (R )............................................155°C/W

θJA

MSOP (R ) ..........................................200°C/W

θJA

Specified Temperature Range ........... -40°C to +125°C

Storage Temperature Range.............. -65°C to +150°C

DC ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise specified, T_MIN≤ T_A≤ T_MAX, V_DD= 3.0V to 5.5V.

Symbol

V_DD

I_DD

Parameter

Supply Voltage

Supply Current, Operating

Min

Typ

Max

Units

Test Conditions

3.0

—

0.5

5.5

1.0

V

mA Pins 6, 7 Open,

C_F= 1 µF, V_IN= V_C(MAX)

I_DD(SHDN)

Supply Current, Shutdown/

Auto-shutdown Mode

V_IN, V_ASInput Leakage

—

25

—

µA Pins 6, 7 Open; Note 1

C_F=1 µF, V_IN= 0.35V

I_IN

-1.0

+1.0

µA

V_OUTOutput

t_R

t_F

t_SHDN

V_OUTRise Time

V_OUTFall Time

Pulse Width (On V_IN) to Clear Fault

Mode

—

30

—

50

—

µsec I_OH= 5 mA, Note 1

µsec I_OL= 1 mA, Note 1

µsec V_SHDN, V_HYST

Specifications, Note 1

I_OL

I_OH

Sink Current at V_OUTOutput

Source Current at V_OUTOutput

1.0

5.0

—

mA V_OL= 10% of V_DD

mA V_OH= 80% of V_DD

SENSE Input

V_TH(SENSE)SENSE Input threshold Voltage with

Respect to GND

50

70

90

mV Note 1

FAULT Output

V_OL

t_MP

t_START

t_DIAG

Output Low Voltage

Missing Pulse Detector Timer

Start-up Timer

—

0.3

—

V

I_OL= 2.5 mA

32/F

3/F

Sec C_F= 1.0 µF

Diagnostic Timer

—

V_IN, V_ASInputs

V_C(MAX)

V_C(SPAN)

V_AS

Voltage at V_INfor 100% Duty Cycle

V_C(MAX)- V_C(MIN)

Auto-shutdown Threshold

Voltage applied to V_INto Release

Reset/Shutdown

2.5

2.65

1.4

—

2.8

1.5

V_C(MAX)

V_DDx 0.13

V

1.3

V_{C(MAX) -}V_C(SPAN)

—

V_SHDN

—

V_REL

Voltage applied to V_INto Release

Reset Mode

V_DDx 0.19

—

V

V_DD= 5V,

See Figure 5-11

V_HYST

V_HAS

Hysteresis on V_SHDN,V_REL

Hysteresis on Auto-shutdown

Comparator

—

0.01 x V_DD

70

—

V

mV

Pulse Width Modulator

F_OSC

PWM Frequency

26

30

34

Hz C_F= 1.0 µF

Note 1: Ensured by design, not tested.

2002 Microchip Technology Inc.

DS21449C-page 3

TC649

2.3

Analog Input (V

)

2.0

PIN DESCRIPTIONS

AS

An external resistor divider connected to the V input

The descriptions of the pins are listed in Table 2-1.

AS

sets the auto-shutdown threshold. Auto-shutdown

occurs when V ≤ V . The fan is automatically

IN

AS

TABLE 2-1:

Pin No. Symbol

PIN FUNCTION TABLE

Descriptiion

Analog Input

restarted when V ≥ (V + V ). See Section 5.0,

HAS

IN

AS

“Typical Applications”, for more details.

1

2

3

4

5

6

7

8

V

IN

2.4

Ground (GND)

C

Analog Output

Analog Input

F

GND denotes the ground terminal.

V

AS

GND

Ground Terminal

2.5

Analog Input (SENSE)

SENSE Analog Input

FAULT Digital (Open Collector) Output

Pulses are detected at the SENSE pin as fan rotation

chops the current through a sense resistor (R ).

SENSE

V

Digital Output

OUT

The absence of pulses indicates

a fault. See

V

Power Supply Input

Section 5.0, “Typical Applications”, for more details.

DD

2.1

Analog Input (V )

2.6

Digital Output (FAULT)

IN

The thermistor network (or other temperature sensor)

The FAULT line goes low to indicate a fault condition.

When FAULT goes low due to a fan fault condition, the

device is latched in shutdown mode until deliberately

cleared or until power is cycled.

connects to the V input. A voltage range of 1.25V to

IN

2.65V (typical) on this pin drives an active duty cycle of

0% to 100% on the V

pin. The TC649 enters shut-

OUT

down mode when V ≤ V

During shutdown, the

SHDN.

IN

2.7

Digital Output (V

)

FAULT output is inactive, and supply current falls to

25 µA (typical). The TC649 exits shutdown mode when

OUT

is an active high complimentary output that drives

V

OUT

V

≥ V

. See Section 5.0, “Typical Applications”, for

REL

IN

the base of an external NPN transistor (via an appropri-

ate base resistor) or the gate of an N-channel

MOSFET. This output has asymmetrical drive (see

Section 1.0, “Electrical Characteristics”).

details.

2.2

Analog Output (C )

F

C is the positive terminal for the PWM ramp generator

F

2.8

Power Supply Input (V

)

timing capacitor. The recommended C is 1 µF for

DD

may be independent of the fan’s power supply

F

30 Hz PWM operation.

V

DD

(see Section 1.0, “Electrical Characteristics”).

DS21449C-page 4

2002 Microchip Technology Inc.

TC649

3.5

FAULT Output

3.0

3.1

DETAILED DESCRIPTION

PWM

Pulses appearing at SENSE due to the PWM turning

on are blanked, and the remaining pulses are filtered

by a missing pulse detector. If consecutive pulses are

not detected for thirty-two PWM cycles ( 1 Sec if

The PWM circuit consists of a ramp generator and

threshold detector. The frequency of the PWM is

determined by the value of the capacitor connected to

C = 1 µF), the Diagnostic Timer is activated, and

F

OUT

V

is driven high continuously for three PWM cycles

the C input. A frequency of 30 Hz is recommended for

F

( 100 msec if C = 1 µF). If a pulse is not detected

most applications (C = 1 µF). The PWM is also the

F

within this window, the Start-up Timer is triggered (see

Section 3.3, “Start-up Timer”). This should clear a tran-

sient fault condition. If the missing pulse detector times

out again, the PWM is stopped and FAULT goes low.

When FAULT is activated due to this condition, the

device is latched in shutdown mode and will remain off

indefinitely. The TC649 is thus prevented from

attempting to drive a fan under catastrophic fault

conditions.

time base for the Start-up Timer (see Section 3.3,

“Start-up Timer”). The PWM voltage control range is

1.25V to 2.65V (typical) for 0% to 100% output duty

cycle.

3.2

V_OUTOutput

The V

pin is designed to drive a low cost transistor

OUT

or MOSFET as the low side power switching element in

the system. Various examples of driver circuits will be

shown throughout the datasheet. This output has

asymmetric complementary drive and is optimized for

driving NPN transistors or N-channel MOSFETs. Since

the system relies on PWM rather than linear control,

the power dissipation in the power switch is kept to a

minimum. Generally, very small devices (TO-92 or SOT

packages) will suffice.

One of two things will restore operation: Cycling power

off and then on again; or pulling V below V

and

SHDN

IN

releasing it to a level above V

. When one of these

REL

two conditions is satisfied, the normal start-up cycle is

triggered and operation will resume, provided the fault

has been cleared.

3.6

Auto-Shutdown Mode

3.3

Start-Up Timer

If the voltage on V becomes less than the voltage on

IN

V

, the fan is automatically shut off (auto-shutdown

AS

To ensure reliable fan start-up, the Start-up Timer turns

mode). The TC649 exits auto-shutdown mode when

the voltage on V becomes higher than the voltage on

the V

output on for 32 cycles of the PWM whenever

OUT

IN

the fan is started from the off state. This occurs at

V

by V

(the auto-shutdown hysteresis voltage,

HAS

AS

power-up and when coming out of shutdown or auto-

shutdown mode. If the PWM frequency is 30 Hz (C =

see Figure 3-1). The Start-up Timer is triggered and

normal operation is resumed upon exiting auto-shut-

down mode. The FAULT output is unconditionally

inactive in auto-shutdown mode.

F

1 µF) the resulting start-up time will be approximately

one second. If a fan fault is detected (see Section 3.5,

FAULT Output), the Diagnostic Timer is triggered once,

followed by the Start-up Timer. If the fault persists, the

device is shut down (see Section 3.5, FAULT Output).

3.4

SENSE Input

(FanSense™ Technology)

The SENSE input (Pin 5) is connected to a low value

current sensing resistor in the ground return leg of the

fan circuit. During normal fan operation, commutation

occurs as each pole of the fan is energized. This

causes brief interruptions in the fan current, seen as

pulses across the sense resistor. If the device is not in

shutdown or auto-shutdown mode, and pulses are not

appearing at the SENSE input, a fault exists.

The short, rapid change in fan current (high dl/dt)

causes a corresponding dV/dt across the sense

resistor,

R

.

The waveform on

R

is

SENSE

differentiated and converted to a logic-level pulse-train

by C

and the internal signal processing circuitry.

SENSE

The presence and frequency of this pulse-train is a

direct indication of fan operation. See Section 5.0,

“Typical Applications”, for more details.

2002 Microchip Technology Inc.

DS21449C-page 5

TC649

Status

Normal

Operation

Auto-Shutdown

Mode

Normal

Operation

Shut-

Down

Normal

Operation

HI

2.6V

V

+ V

V

AS

HAS

AS

TEMP.

1.2V

t

RESET

V

IN

V

REL

V

SHDN

LO

GND

TIME

FIGURE 3-1:

TC649 Nominal Operation.

If a fan fault has occurred and the device has latched

itself into shutdown mode, performing a reset will not

3.7 Shutdown Mode (RESET)

If an unconditional shutdown and/or device reset is

desired, the TC649 may be placed in shutdown mode

clear the fault unless V > (V + V

). If V is not

IN

AS

HAS

greater than V + V

upon exiting shutdown mode,

HAS

AS

by forcing V to a logic low (i.e., V < V ) (see

SHDN

IN

the fan will not be restarted, and there will be no way to

establish that the fan fault has been cleared. To ensure

that a complete reset takes place, the user’s circuitry

Figure 3-1). In this mode, all functions cease and the

FAULT output is unconditionally inactive. The TC649

should not be shut down unless all heat producing activ-

ity in the system is at a negligible level. The TC649 exits

must ensure that V > (V + V ) when the device

HAS

IN

AS

is released from shutdown mode. A recommended

algorithm for management of the TC649 by a host

microcontroller or other external circuitry is given in

Section 5.0, “Typical Applications”. A small amount of

shutdown mode when V becomes greater than V

,

REL

IN

the release voltage.

Entering shutdown mode also performs a complete

device reset. Shutdown mode resets the TC649 into its

power-up state. The Start-up and Fault Timers and any

current faults are cleared. FAULT is unconditionally

inactive in shutdown mode. Upon exiting shutdown

hysteresis, typically one percent of V

= 5.0V), is designed into the V

(50mV at V

DD

/V

threshold.

SHDN REL

The levels specified for V

and V

in Section 1.0,

SHDN

REL

“Electrical Characteristics”, include this hysteresis plus

adequate margin to account for normal variations in the

absolute value of the threshold and hysteresis.

mode (V > V

), the Start-up Timer will be triggered

IN

REL

and normal operation will resume, assuming no fault

conditions exist and V > (V + V ).

IN

AS

HAS

CAUTION: The fan will remain off as long as the V

IN

pin is being held low or V < V + V .

HAS

Note: If V < V when the device exits shut-

IN

AS

IN

AS

down mode, the fan will not restart, but will

be in auto-shutdown mode.

DS21449C-page 6

2002 Microchip Technology Inc.

TC649

4.3

Fan Fault

4.0

SYSTEM BEHAVIOR

Fan Fault is an infinite loop wherein the TC649 is

The flowcharts describing the TC649’s behavioral

algorithm are shown in Figure 4-1. They can be

summarized as follows:

latched in shutdown mode. This mode can only be

released by a reset (i.e., V being brought below

IN

HAS

V

, then above (V + V

) or by power-cycling).

SHDN

AS

4.1

Power-Up

(1) While in this state, FAULT is latched on (low) and

the V output is disabled.

OUT

(1) Assuming the device is not being held in shutdown

or auto-shutdown mode (V > V )...

(2) A reset sequence applied to the V pin will exit the

IN

AS

IN

loop to Power-up.

(3) End.

(2) Turn V

output on for 32 cycles of the PWM

OUT

clock. This ensures that the fan will start from a

dead stop.

(3) During this Start-up Timer, if a fan pulse is

detected, branch to Normal Operation; if none are

received…

(4) Activate the 32-cycle Start-up Timer one more

time and look for fan pulse; if a fan pulse is

detected, proceed to Normal Operation; if none

are received…

(5) Proceed to Fan Fault.

(6) End.

4.2

Normal Operation

Normal Operation is an endless loop which may only

be exited by entering shutdown mode, auto-shutdown

mode or Fan Fault. The loop can be thought of as exe-

cuting at the frequency of the oscillator and PWM.

(1) Reset the missing pulse detector.

(2) Is TC649 in shutdown or auto-shutdown mode? If

so…

a. V

duty cycle goes to zero.

OUT

b. FAULT is disabled.

c. Exit the loop and wait for V > (V + V ) to

HAS

IN

AS

resume operation.

(3) Drive V

to a duty cycle proportional to V on a

IN

OUT

cycle by cycle basis.

(4) If a fan pulse is detected, branch back to the start

of the loop (1).

(5) If the missing pulse detector times out …

(6) Activate the 3-cycle Diagnostic Timer and look for

pulses; if a fan pulse is detected, branch back to

the start of the loop (1); if none are received…

(7) Activate the 32-cycle Start-up Timer and look for

pulses; if a fan pulse is detected, branch back to

the start of the loop (1); if none are received…

(8) Quit Normal Operation and go to Fan Fault.

(9) End.

2002 Microchip Technology Inc.

DS21449C-page 7

TC649

Normal

Operation

Power-Up

Clear Missing

Pulse Detector

Power-on

Reset

FAULT = 1

Yes

Shutdown

= 0

V

< V

SHDN

IN

V

OUT

Yes

Shutdown

= 0

V

< V ?

SHDN

IN

No

V

OUT

No

V

REL

>

?

IN

No

V

> V

REL

No

IN

Yes

Auto

Shutdown

Yes

Power-Up

Auto-

Shutdown

V

< V ?

AS

IN

Yes

V

< V

AS

?

V

= 0

IN

OUT

V

= 0

OUT

No

V

>

)

HAS

No

IN

+ V

(V

AS

V

>

No

IN

V

(V

V

+

OUT

Proportional

to V

)

AS

HAS

Yes

Hot Start

IN

Yes

Hot Start

Fire Start-up

Timer

(1 SEC)

Yes

No

Fan Pulse

Detected?

M.P.D.

Expired?

Fire Start-up

Yes

Fire

No

Timer

Fan Pulse

Detected?

YES

(1 SEC)

Diagnostic

Timer

(100msec)

Yes

Fan Pulse

Detected?

No

Fire Start-up

Timer

(1 Sec)

Yes

Fan Pulse

Detected?

Normal

Operation

No

Fan Fault

Yes

Fan Pulse

Detected?

No

Fan Fault

FAULT = 0,

V

= 0

OUT

No

Auto-Shutdown

FAULT = 1,

No

Cycling

Power

V

< V

?

IN

SHDN

V

= 0

OUT

Yes

No

V

> V

V

> (V + V

AS

)?

?

REL

IN

HAS

No

Yes

Power-Up

FIGURE 4-1:

TC649 Behavioral Algorithm Flowchart.

DS21449C-page 8

2002 Microchip Technology Inc.

TC649

The TC642 demonstration and prototyping board

(TC642DEMO) and the TC642 Evaluation Kit

(TC642EV) provide working examples of TC649 cir-

cuits and prototyping aids. The TC642DEMO is a

printed circuit board optimized for small size and ease

of inclusion into system prototypes. The TC642EV is a

larger board intended for benchtop development and

analysis. At the very least, anyone contemplating a

design using the TC649 should consult the documen-

tation for both TC642EV (DS21403) and TC642DEMO

(DS21401).Figure 5-1 shows the base schematic for

the TC642DEMO.

5.0

TYPICAL APPLICATIONS

Designing with the TC649 involves the following:

(1) The temperature sensor network must be

configured to deliver 1.25V to 2.65V on V for 0%

IN

to 100% of the temperature range to be regulated.

(2) The auto-shutdown temperature must be set

with a voltage divider on V

.

AS

(3) The output drive transistor and associated circuitry

must be selected.

(4) The SENSE network, R

and C

, must

SENSE

be designed for maximum efficiency while

delivering adequate signal amplitude.

(5) If shutdown capability is desired, the drive require-

ments of the external signal or circuit must be

considered.

+5V*

+

C

B

+12V

1 µF

R

1

NTC

Fan

Q

Shutdown**

V

DD

V

IN

C

B

0.01 µF

R

2

Fan Fault

Shutdown

FAULT

1

+5V

R

BASE

TC649

V

R

OUT

3

V

AS

C

B

SENSE

0.01 µF

C

SENSE

C

R

4

F

R

SENSE

C

F

1 µF

GND

Notes: *See cautions regarding Latch-up Considerations in Section 5.0, "Typical Applications".

**Optional. See Section 5.0, "Typical Applications" for details.

FIGURE 5-1:

Typical Application Circuit.

2002 Microchip Technology Inc.

DS21449C-page 9

TC649

EQUATION

5.1

Temperature Sensor Design

The temperature signal connected to V must output a

V

x R

DD 2

IN

= V(T )

1

voltage in the range of 1.25V to 2.65V (typical) for 0%

to 100% of the temperature range of interest. The

circuit in Figure 5-2 illustrates a convenient way to

provide this signal.

R

(T ) + R

1 2

TEMP

V

x R

2

DD

= V(T )

2

R

(T ) + R

2 2

TEMP

V

DD

Where T and T define the temperature range of the

1

2

circuit. R

is the parallel equivalent of the

TEMP

thermistor and R at those temperatures.

I

DIV

1

More information about thermistors may be obtained

from AN679, “Temperature Sensing Technologies”,

and AN685, “Thermistors in Single Supply

Temperature Sensing Circuit”, which can be down-

R

=100 kΩ

1

RT

NTC

Thermistor

1

loaded

from

Microchip’s

website

at

V

IN

100 kΩ @ 25˚C

www.microchip.com.

R

2

= 23.2 kΩ

5.2

Auto-Shutdown Temperature

Design

A voltage divider on V sets the temperature at which

AS

the part is automatically shut down if the sensed tem-

FIGURE 5-2:

Temperature Sensing

perature at V drops below the set temperature at V

IN

AS

Circuit.

(i.e. V < V ). As with the V input, 1.25V to 2.65V

IN

(typ.) corresponds to the temperature range of interest

from T to T , respectively. Assuming that the temper-

Figure 5-2 shows a simple temperature dependent

voltage divider circuit. RT is a conventional NTC ther-

1

2

1

ature sensor network designed above is linearly related

mistor, while R and R are standard resistors. The

1

2

to temperature, the shutdown temperature T

related to T and T by:

is

supply voltage, V , is divided between R and the

AS

DD

2

parallel combination of RT and R . For convenience,

2

1

the parallel combination of RT and R will be referred

1

to as R

. The resistance of the thermistor at various

EQUATION

TEMP

temperatures is obtained from the manufacturer’s

specifications. Thermistors are often referred to in

terms of their resistance at 25°C.

V

T

- 1.25

- T

2.65V - 1.25V

T - T

AS

=

AS

1

2

1

Generally, the thermistor shown in Figure 5-2 is a non-

1.4V

linear device with a negative temperature coefficient

V

=

(

(T - T ) + 1.25

AS 1

)

AS

T - T

2

1

(also called an NTC thermistor). In Figure 5-2, R is

1

used to linearize the thermistor temperature response

For example, if 1.25V and 2.65V at V corresponds to

and R is used to produce a positive temperature

IN

2

a temperature range of T = 0°C to T = 125°C, and the

coefficient at the V node. As an added benefit, this

1

IN

auto-shutdown temperature desired is 25°C, then V

voltage is:

configuration produces an output voltage delta of 1.4V,

AS

which is well within the range of the V

C(SPAN)

specification of the TC649. A 100 kΩ NTC thermistor is

selected for this application in order to keep I

minimum.

at a

EQUATION

DIV

1.4V

For the voltage range at V to be equal to 1.25V to

IN

(25 - 0) + 1.25 = 1.53V

V

=

AS

2.65V, the temperature range of this configuration is

0°C to 50°C. If a different temperature range is required

(125 - 0)

from this circuit, R should be chosen to equal the

1

The V voltage may be set using a simple resistor

divider, as is shown in Figure 5-3.

AS

resistance value of the thermistor at the center of this

new temperature range. It is suggested that a maxi-

mum temperature range of 50°C be used with this cir-

cuit due to thermistor linearity limitations. With this

change, R is adjusted according to the following

2

equations:

DS21449C-page 10

2002 Microchip Technology Inc.

TC649

5.3

Operations at Low Duty Cycle

V

DD

One boundary condition which may impact the

selection of the minimum fan speed is the irregular

activation of the Diagnostic Timer due to the TC649

“missing” fan commutation pulses at low speeds. This

is a natural consequence of low PWM duty cycles (typ-

ically 25% or less). Recall that the SENSE function

detects commutation of the fan as disturbances in the

R

1

I

IN

I

V

AS

DIV

current through R

. These can only occur when

SENSE

the fan is energized (i.e., V

is “on”). At very low duty

OUT

cycles, the V

output is “off” most of the time. The fan

2

OUT

may be rotating normally, but the commutation events

are occurring during the PWM’s off-time.

GND

The phase relationship between the fan’s commutation

and the PWM edges tends to “walk around” as the

system operates. At certain points, the TC649 may fail

to capture a pulse within the 32-cycle missing pulse

detector window. If this happens, the 3-cycle

FIGURE 5-3:

V

Circuit.

AS

Per Section 1.0, “Electrical Characteristics”, the leak-

age current at the V pin is no more than 1 µA. It is

AS

Diagnostic Timer will be activated, the V

output will

conservative to design for a divider current, I , of

OUT

DIV

be active continuously for three cycles and, if the fan is

operating normally, a pulse will be detected. If all is

well, the system will return to normal operation. There

is no harm in this behavior, but it may be audible to the

user as the fan accelerates briefly when the Diagnostic

100 µA. If V = 5.0V then:

DD

EQUATION

5.0V

– 4

I

= 1e

A

, therefore

Timer fires. For this reason, it is recommended that V

DIV

AS

R + R

1

2

be set no lower than 1.8V.

5.0V

R + R =

= 50,000Ω = 50 kΩ

1

2

™

–4

5.4

FanSense Network

1e A

(R_SENSEand C_SENSE

)

We can further specify R and R by the condition that

1

2

The FanSense network, comprised of R

and

SENSE

the divider voltage is equal to our desired V . This

AS

C

, allows the TC649 to detect commutation of

SENSE

yields the following:

the fan motor (FanSense™ technology). This network

can be thought of as a differentiator and threshold

EQUATION

detector. The function of R

is to convert the fan

SENSE

current into a voltage. C

serves to AC-couple this

SENSE

V

x R

2

DD

voltage signal and provide a ground-referenced input to

the SENSE pin. Designing a proper SENSE network is

V

=

AS

R + R

1

2

simply a matter of scaling R

to provide the nec-

SENSE

essary amount of gain (i.e., the current-to-voltage con-

version ratio). 0.1 µF ceramic capacitor is

recommended for C

Solving for the relationship between R and R results

1

2

A

in:

. Smaller values require

SENSE

larger sense resistors, and higher value capacitors are

bulkier and more expensive. Using a 0.1 µF capacitor

EQUATION

5 -1.53

1.53

V

- V

AS

results in reasonable values for R

. Figure 5-4

DD

SENSE

R = R x

= R x

1

2

illustrates a typical SENSE network. Figure 5-5 shows

the waveforms observed using a typical SENSE net-

work.

V

AS

In the case of this example, R = (2.27) R . Substituting

1

2

this relationship back into the V equation above

AS

yields the resistor values:

R = 15.3 kΩ, and

2

R = 34.7 kΩ

1

In this case, the standard values of 34.8 kΩ and

15.4 kΩ are very close to the calculated values and

would be more than adequate.

2002 Microchip Technology Inc.

DS21449C-page 11

TC649

TABLE 5-1:

Nominal Fan Current (mA)

R_SENSEVS. FAN CURRENT

V

DD

R

(Ω)

SENSE

9.1

4.7

3.0

2.4

2.0

1.8

1.5

1.3

1.2

1.0

50

100

150

200

250

300

350

400

450

500

Fan

R

BASE

V

OUT

Q

R

1

SENSE

C

SENSE

(0.1 µF Typ.)

SENSE

5.5

Output Drive Transistor Selection

The TC649 is designed to drive an external transistor

GND

or MOSFET for modulating power to the fan. This is

shown as Q in Figures 5-1, 5-4, 5-6, 5-7, 5-8 and 5-9.

1

FIGURE 5-4:

SENSE Network.

The V

pin has a minimum source current of 5 mA

OUT

and a minimum sink current of 1 mA. Bipolar transistors

or MOSFETs may be used as the power switching

element as shown in Figure 5-6. When high current

gain is needed to drive larger fans, two transistors may

be used in a Darlington configuration. These circuit

topologies are shown in Figure 5-6: (a) shows a single

NPN transistor used as the switching element; (b)

illustrates the Darlington pair; and (c) shows an N-

channel MOSFET.

One major advantage of the TC649’s PWM control

scheme versus linear speed control is that the power

dissipation in the pass element is kept very low. Gener-

ally, low cost devices in very small packages, such as

TO-92 or SOT, can be used effectively. For fans with

nominal operating currents of no more than 200 mA, a

single transistor usually suffices. Above 200 mA, the

Darlington or MOSFET solution is recommended. For

the fan sensing function to work correctly, it is

imperative that the pass transistor be fully saturated

when “on”.

Tek Run: 10.0kS/s Sample

[

T

]

Waveform @ Sense Resistor

Waveform @ Sense Pin

GND

1

2

90mV

50mV

GND

T

M5.00ms

142mV

Ch1 100mV

Ch2

100mV

Ch1

FIGURE 5-5:

Table 5-1 lists the recommended values of R

SENSE Waveforms.

SENSE

based on the nominal operating current of the fan. Note

that the current draw specified by the fan manufacturer

may be a worst-case rating for near-stall conditions and

may not be the fan’s nominal operating current. The

values in Table 5-1 refer to actual average operating

current. If the fan current falls between two of the val-

ues listed, use the higher resistor value. The end result

of employing Table 5-1 is that the signal developed

across the sense resistor is approximately 450 mV in

amplitude.

DS21449C-page 12

2002 Microchip Technology Inc.

TC649

Table 5-2 gives examples of some commonly available

transistors and MOSFETs. This table should be used

as a guide only since there are many transistors and

MOSFETs which will work just as well as those listed.

The critical issues when choosing a device to use as

be enough to saturate the transistor when conducting

the full fan current (transistor must have sufficient

gain); (3) the V

voltage must be high enough to suf-

OUT

ficiently drive the gate of the MOSFET to minimize the

R

of the device; (4) rated fan current draw must

DS(on)

Q1 are: (1) the breakdown voltage (V

or V

be within the transistor's/MOSFET's current handling

capability; and (5) power dissipation must be kept

within the limits of the chosen device.

(BR)CEO

DS

(MOSFET)) must be large enough to withstand the

highest voltage applied to the fan (Note: This will occur

when the fan is off); (2) 5 mA of base drive current must

V

DD

V

DD

Fan

R

BASE

R

BASE

V

OUT

Q

1

V

Q

1

OUT

Q

1

V

OUT

Q

2

R

SENSE

R

SENSE

GND

C) N-Channel MOSFET

GND

a) Single Bipolar Transistor

GND

b) Darlington Transistor Pair

FIGURE 5-6:

Output Drive Transistor Circuit Topologies.

TABLE 5-2:

Device

TRANSISTORS AND MOSFETS FOR Q (V = 5V)

1

DD

Max. V

/V

V

/V

Fan Current

(mA)

Suggested

BE(sat) GS

CEO DS

Package

Min. H

FE

(V)

R

(Ω)

BASE

800

301

Note 1

MMBT2222A

MPS2222A

MPS6602

SI2302

MGSF1N02E

SI4410

SOT-23

TO-92

SOT-23

SO-8

1.2

2.5

4.5

50

NA

40

20

30

60

150

500

1000

500

SI2308

SOT-23

Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times.

2002 Microchip Technology Inc.

DS21449C-page 13

TC649

A base-current limiting resistor is required with bipolar

transistors (Figure 5-7). The correct value for this

resistor can be determined as follows:

V

DD

V

= V_RSENSE+ V

+ V

RBASE

OH

BE(SAT)

x R

SENSE

= I

RSENSE

RBASE

BASE

FAN

= R

x I

BASE

Fan

I

= I

/ h

FAN FE

V

is specified as 80% of V

in Section 1.0,

DD

OH

“Electrical Characteristics”; V

is given in the cho-

BE(SAT)

R

BASE

sen transistor data sheet. It is now possible to solve for

R

V

= 80% V

DD

OH

Q

R

1

.

–

+

BE

+

BASE

V

R

BASE

–

V

(SAT)

+

EQUATION

V

- V

BE(SAT) RSENSE

BASE

OH

V

R

=

SENSE

–

SENSE

BASE

I

Some applications benefit from the fan being powered

from a negative supply to keep motor noise out of the

positive supply rails. This can be accomplished as

GND

shown in Figure 5-8, with zener diode D offsetting the

1

FIGURE 5-7:

BASE

Circuit For Determining

-12V power supply voltage, holding transistor Q off

1

R

.

when V

is low. When V

is high, the voltage at

OUT

the anode of D increases by V

, causing Q to turn

1

on. Operation is otherwise the same as in the case of

fan operation from +12V.

+5V

V

DD

R *

2

2.2 kΩ

V

OUT

D

1

12.0V

Zener

FAN

TC649

Q *

1

R *

4

R *

3

10 kΩ

2.2 Ω

GND

-12V

Note: * Value depends on the specific application and is shown for example only.

See Section 5.0, "Typical Applications", for more details.

FIGURE 5-8:

Powering the Fan from a -12V Supply.

DS21449C-page 14

2002 Microchip Technology Inc.

TC649

a high impedance source (such as a thermistor). Addi-

5.6

Latch-up Considerations

tionally, the V input should be bypassed with a 1 µF

DD

As with any CMOS IC, the potential exists for latch-up

if signals are applied to the device which are outside

the power supply range. This is of particular concern

during power-up if the external circuitry (such as the

capacitor with grounds being kept as short as possible.

To keep fan noise off the TC649 ground pin, individual

ground returns for the TC649 and the low side of the

fan current sense resistor should be used.

sensor network, V divider or shutdown circuit) are

AS

powered by a supply different from that of the TC649.

Design Example

Care should be taken to ensure that the TC649’s V

DD

Step 1. Calculate R and R based on using an NTC

supply powers up first. If possible, the networks

attached to V and V should connect to the V sup-

1

2

having a resistance of 10 kΩ at T

(25°C)

MIN

IN

AS

DD

and 4.65 kΩ at T

(45°C) (see Figure 5-9).

ply at the same physical location as the IC itself. Even

if the IC and any external networks are powered by the

same supply, physical separation of the connecting

points can result in enough parasitic capacitance and/

or inductance in the power supply connections to delay

one power supply “routing” versus another.

MAX

R = 20.5 kΩ

1

R = 3.83 kΩ

2

Step 2. Set auto-shutdown Level.

V

= 1.8V.

AS

Limit the divider current to 100 µA

R = 33 kΩ

R = 18 kΩ

5.7

Power Supply Routing and

Bypassing

5

6

Step 3. Design the output circuit.

Noise present on the V and V inputs may cause

IN

AS

Maximum fan motor current = 250 mA.

erroneous operation of the FAULT output. As a result,

these inputs should be bypassed with a 0.01 µF

capacitor mounted as close to the package as possible.

Q beta is chosen at 50 from which

1

R = 800 Ω.

7

This is especially true of V , which is usually drive from

IN

+5V

+12V

+5V

C

1 µF

B

NTC

10 kΩ

@ 25˚C

R

1

Open-

Drain

Device

20.5 kΩ

4

8

Fan

1

RESET

Shutdown

V

DD

GND

IN

C

B

R

2

0.01 µF

6

Fan Fault

Q

1

FAULT

3.83 kΩ

(Optional)

R

800 Ω

+5V

7

TC649

7

5

V

R

33 kΩ

OUT

5

3

V

AS

C

B

SENSE

0.01 µF

C

0.1 µF

2

R

18 kΩ

SENSE

6

C

F

R

SENSE

2.2 Ω

C

1 µF

1

FIGURE 5-9:

Design Example.

2002 Microchip Technology Inc.

DS21449C-page 15

TC649

(5% tolerance) form a crude 3-bit DAC that translates

this 3-bit code from the processor's outputs into a 1.6V

DC control signal. A monolithic DAC or digital pot may

be used instead of the circuit shown in Figure 5-10.

5.8

TC649 as a Microcontroller

Peripheral

In a system containing a microcontroller or other host

intelligence, the TC649 can be effectively managed as

a CPU peripheral. Routine fan control functions can be

performed by the TC649 without processor interven-

tion. The microcontroller receives temperature data

from one or more points throughout the system. It

calculates a fan operating speed based on an algorithm

specifically designed for the application at hand. The

processor controls fan speed using complementary

With V set at 1.8V, the TC649 enters auto-shutdown

AS

when the processor's output code is 000[B]. Output

codes 001[B] to 111[B] operate the fan from roughly

40% to 100% of full speed. An open-drain output from

the processor (I/O0) can be used to reset the TC649

following detection of a fault condition. The FAULT out-

put can be connected to the processor's interrupt input

or to another I/O pin for polled operation.

port bits I/O1 through I/O3. Resistors R through R

1

6

.

+12V

+5V

(RESET) (Optional)

Open-Drain

Output

I/O0

I/O1

+5V

Fan

1

R

110 kΩ

(MSB)

1

2

+

1µF

8

V

DD

C

IN

B

C

B

R

2

1 µF

R

800 Ω

Analog or Digital

Temperature Data from

One or more Sensors

CMOS

Outputs

240 kΩ

9

.01 µF

I/O2

I/O3

7

R

3

360 kΩ

V

C

OUT

2N2222A

F

+5V

TC649

R

33 kΩ

7

R

18 kΩ

4

R

10

3

B

CMOS

Microcontroller

6

5

(LSB)

R

5

V

AS

10 kΩ

FAULT

C

1.5 kΩ

+5V

R

8

.01µF

4

0.1 µF

18 kΩ

R

6

GND

SENSE

1 kΩ

R

11

2.2 Ω

GND

INT

FIGURE 5-10:

TC649 as a Microcontroller Peripheral.

vs.Temperature

V

RELEASE

1.0

V

= 5.5V

= 5.0V

DD

0.9

0.8

0.7

V

DD

V

= 4.0V

DD

0.6

0.5

0.4

V

= 3.0V

DD

0˚C

25˚C

85˚C

TEMPERATURE

V_RELEASEvs. Temperature.

FIGURE 5-11:

DS21449C-page 16

2002 Microchip Technology Inc.

TC649

6.0

6.1

PACKAGING INFORMATION

Package Marking Information

8-Lead PDIP (300 mil)

Example:

XXXXXXXX

NNN

TC649VPA

025

YYWW

0215

8-Lead SOIC (150 mil)

Example:

XXXXXXXX

YYWW

TC649VOA

0215

NNN

025

Example:

8-Lead MSOP

TC649E

XXXXXX

YWWNNN

215025

Legend: XX...X Customer specific information*

YY

WW

NNN

Year code (last 2 digits of calendar year)

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code

Note:

In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line thus limiting the number of available characters

for customer specific information.

*

Standard marking consists of Microchip part number, year code, week code, traceability code (facility

code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check

with your Microchip Sales Office.

2002 Microchip Technology Inc.

DS21449C-page 17

TC649

8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)

E1

D

2

n

1

α

E

A2

A

L

c

A1

β

B1

B

p

eB

Units

Dimension Limits

INCHES*

NOM

MILLIMETERS

MIN

MAX

MIN

NOM

8

MAX

n

p

A

A2

A1

E

E1

D

L

c

B1

B

Number of Pins

Pitch

Top to Seating Plane

Molded Package Thickness

Base to Seating Plane

Shoulder to Shoulder Width

Molded Package Width

Overall Length

Tip to Seating Plane

Lead Thickness

Upper Lead Width

Lower Lead Width

Overall Row Spacing

Mold Draft Angle Top

Mold Draft Angle Bottom

8

.100

.155

.130

2.54

3.94

3.30

.140

.170

.145

3.56

2.92

4.32

3.68

.115

.015

.300

.240

.360

.125

.008

.045

.014

.310

5

0.38

7.62

6.10

9.14

3.18

0.20

1.14

0.36

7.87

5

.313

.250

.373

.130

.012

.058

.018

.370

10

.325

.260

.385

.135

.015

.070

.022

.430

15

7.94

6.35

9.46

3.30

0.29

1.46

0.46

9.40

10

8.26

6.60

9.78

3.43

0.38

1.78

0.56

10.92

15

§

eB

α

β

5

10

15

5

10

15

* Controlling Parameter

§ Significant Characteristic

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MS-001

Drawing No. C04-018

DS21449C-page 18

2002 Microchip Technology Inc.

TC649

8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)

E

E1

p

D

2

B

n

1

h

α

45×

c

A2

A

f

β

L

A1

Units

INCHES*

NOM

MILLIMETERS

Dimension Limits

MIN

MAX

MIN

NOM

8

MAX

n

p

A

A2

A1

E

E1

D

h

L

f

Number of Pins

Pitch

Overall Height

8

.050

.061

.056

.007

.237

.154

.193

.015

.025

4

1.27

.053

.069

1.35

1.32

1.55

1.42

0.18

6.02

3.91

4.90

0.38

0.62

4

1.75

1.55

0.25

6.20

3.99

5.00

0.51

0.76

8

Molded Package Thickness

Standoff

.052

.004

.228

.146

.189

.010

.019

0

.061

.010

.244

.157

.197

.020

.030

8

§

0.10

5.79

3.71

4.80

0.25

0.48

0

Overall Width

Molded Package Width

Overall Length

Chamfer Distance

Foot Length

Foot Angle

c

Lead Thickness

Lead Width

.008

.013

0

.009

.017

12

.010

.020

15

0.20

0.33

0

0.23

0.42

12

0.25

0.51

15

B

α

β

Mold Draft Angle Top

Mold Draft Angle Bottom

0

12

15

0

12

15

* Controlling Parameter

§ Significant Characteristic

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MS-012

Drawing No. C04-057

2002 Microchip Technology Inc.

DS21449C-page 19

TC649

8-Lead Plastic Micro Small Outline Package (MS) (MSOP)

E

p

E1

D

2

B

n

1

α

A2

A

c

φ

A1

(F)

L

β

Units

Dimension Limits

INCHES

NOM

MILLIMETERS*

NOM

MIN

MAX

MIN

MAX

n

p

Number of Pins

Pitch

8

.026

0.65

Overall Height

Molded Package Thickness

A

A2

A1

E

E1

D

.044

1.18

.030

.034

.038

.006

.200

.122

.028

.039

0.76

0.05

0.86

0.97

0.15

.5.08

3.10

0.70

1.00

Standoff

§

.002

.184

.114

.016

.035

Overall Width

Molded Package Width

Overall Length

Foot Length

Footprint (Reference)

Foot Angle

.193

.118

.022

.037

4.90

3.00

0.55

0.95

4.67

2.90

0.40

0.90

L

F

φ

0

6

0

6

c

Lead Thickness

Lead Width

Mold Draft Angle Top

Mold Draft Angle Bottom

.004

.010

.006

.012

.008

.016

0.10

0.25

0.15

0.30

0.20

0.40

B

α

β

7

*Controlling Parameter

§ Significant Characteristic

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not

exceed. 010" (0.254mm) per side.

Drawing No. C04-111

DS21449C-page 20

2002 Microchip Technology Inc.

TC649

6.2

Taping Form

Component Taping Orientation for 8-Pin SOIC (Narrow) Devices

User Direction of Feed

PIN 1

W

P

Standard Reel Component Orientation

for TR Suffix Device

Carrier Tape, Number of Components Per Reel and Reel Size

Package

Carrier Width (W)

Pitch (P)

Part Per Full Reel

Reel Size

8-Pin SOIC (N)

12 mm

8 mm

2500

13 in

Component Taping Orientation for 8-Pin MSOP Devices

User Direction of Feed

PIN 1

W

P

Standard Reel Component Orientation

for TR Suffix Device

Carrier Tape, Number of Components Per Reel and Reel Size

Package

Carrier Width (W)

Pitch (P)

Part Per Full Reel

Reel Size

8-Pin MSOP

12 mm

8 mm

2500

13 in

2002 Microchip Technology Inc.

DS21449C-page 21

TC649

NOTES:

DS21449C-page 22

2002 Microchip Technology Inc.

TC649

ON-LINE SUPPORT

Microchip provides on-line support on the Microchip

World Wide Web site.

SYSTEMS INFORMATION AND

UPGRADE HOT LINE

The Systems Information and Upgrade Line provides

system users a listing of the latest versions of all of

Microchip's development systems software products.

Plus, this line provides information on how customers

can receive the most current upgrade kits.The Hot Line

Numbers are:

1-800-755-2345 for U.S. and most of Canada, and

1-480-792-7302 for the rest of the world.

The web site is used by Microchip as a means to make

files and information easily available to customers. To

view the site, the user must have access to the Internet

®

and a web browser, such as Netscape or Microsoft

Internet Explorer. Files are also available for FTP

download from our FTP site.

ConnectingtotheMicrochipInternetWebSite

The Microchip web site is available at the following

URL:

092002

www.microchip.com

The file transfer site is available by using an FTP ser-

vice to connect to:

ftp://ftp.microchip.com

The web site and file transfer site provide a variety of

services. Users may download files for the latest

Development Tools, Data Sheets, Application Notes,

User's Guides, Articles and Sample Programs. A vari-

ety of Microchip specific business information is also

available, including listings of Microchip sales offices,

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available for consideration is:

• Latest Microchip Press Releases

• Technical Support Section with Frequently Asked

Questions

• Design Tips

• Device Errata

• Job Postings

• Microchip Consultant Program Member Listing

• Links to other useful web sites related to

Microchip Products

• Conferences for products, Development Systems,

technical information and more

• Listing of seminars and events

2002 Microchip Technology Inc.

DS21449C-page23

TC649

READER RESPONSE

It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod-

uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation

can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.

Please list the following information, and use this outline to provide us with your comments about this document.

To:

Technical Publications Manager

Reader Response

Total Pages Sent ________

RE:

From:

Name

Company

Address

City / State / ZIP / Country

Telephone: (_______) _________ - _________

FAX: (______) _________ - _________

Application (optional):

Would you like a reply?

Y

N

Literature Number:

DS21449C

Device:

TC649

Questions:

1. What are the best features of this document?

2. How does this document meet your hardware and software development needs?

3. Do you find the organization of this document easy to follow? If not, why?

4. What additions to the document do you think would enhance the structure and subject?

5. What deletions from the document could be made without affecting the overall usefulness?

6. Is there any incorrect or misleading information (what and where)?

7. How would you improve this document?

DS21449C-page24

2002 Microchip Technology Inc.

TC649

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.

Device

X

/XX

Examples:

Temperature Package

Range

a)

b)

c)

d)

TC649VOA: PWM Fan Speed Controller w/

Auto-Shutdown and Fault Detection, SOIC

package.

TC649VUA: PWM Fan Speed Controller w/

Auto-Shutdown and Fault Detection, MSOP

package

TC649VPA: PWM Fan Speed Controller w/

Auto-Shutdown and Fault Detection, PDIP

package.

TC649EOATR: PWM Fan Speed Controller w/

Auto-Shutdown and Fault Detection, SOIC

package, Tape and Reel.

Device:

TC649:

PWM Fan Speed Controller w/Auto Shutdown

and Fault Detection

Temperature Range:

Package:

V

E

=

0°C to +85°C

-40°C to +85°C

PA

OA

UA

=

Plastic DIP (300 mil Body), 8-lead *

Plastic SOIC, (150 mil Body), 8-lead

Plastic Micro Small Outline (MSOP), 8-lead

* PDIP package is only offered in the V temp range.

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-

mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277

3. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

2002 Microchip Technology Inc.

DS21449C-page25

TC649

NOTES:

DS21449C-page 26

2002 Microchip Technology Inc.

Information contained in this publication regarding device

applications and the like is intended through suggestion only

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

No representation or warranty is given and no liability is

assumed by Microchip Technology Incorporated with respect

to the accuracy or use of such information, or infringement of

patents or other intellectual property rights arising from such

use or otherwise. Use of Microchip’s products as critical com-

ponents in life support systems is not authorized except with

express written approval by Microchip. No licenses are con-

veyed, implicitly or otherwise, under any intellectual property

rights.

Trademarks

The Microchip name and logo, the Microchip logo, KEELOQ,

MPLAB, PIC, PICmicro, PICSTART and PRO MATE are

registered trademarks of Microchip Technology Incorporated

in the U.S.A. and other countries.

FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL

and The Embedded Control Solutions Company are

registered trademarks of Microchip Technology Incorporated

in the U.S.A.

dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense,

FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,

ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,

MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select

Mode and Total Endurance are trademarks of Microchip

Technology Incorporated in the U.S.A. and other countries.

Serialized Quick Turn Programming (SQTP) is a service mark

of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received QS-9000 quality system

certification for its worldwide headquarters,

design and wafer fabrication facilities in

Chandler and Tempe, Arizona in July 1999

and Mountain View, California in March 2002.

The Company’s quality system processes and

procedures are QS-9000 compliant for its

®

PICmicro 8-bit MCUs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals,

non-volatile memory and analog products. In

addition, Microchip’s quality system for the

design and manufacture of development

systems is ISO 9001 certified.

2002 Microchip Technology Inc.

DS21449C - page 27

M

WORLDWIDE SALES AND SERVICE

Japan

AMERICAS

ASIA/PACIFIC

Microchip Technology Japan K.K.

Benex S-1 6F

Corporate Office

Australia

2355 West Chandler Blvd.

Microchip Technology Australia Pty Ltd

Suite 22, 41 Rawson Street

Epping 2121, NSW

3-18-20, Shinyokohama

Kohoku-Ku, Yokohama-shi

Kanagawa, 222-0033, Japan

Tel: 81-45-471- 6166 Fax: 81-45-471-6122

Chandler, AZ 85224-6199

Tel: 480-792-7200 Fax: 480-792-7277

Technical Support: 480-792-7627

Web Address: http://www.microchip.com

Australia

Tel: 61-2-9868-6733 Fax: 61-2-9868-6755

Korea

Rocky Mountain

China - Beijing

Microchip Technology Korea

168-1, Youngbo Bldg. 3 Floor

Samsung-Dong, Kangnam-Ku

Seoul, Korea 135-882

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7966 Fax: 480-792-4338

Microchip Technology Consulting (Shanghai)

Co., Ltd., Beijing Liaison Office

Unit 915

Bei Hai Wan Tai Bldg.

Tel: 82-2-554-7200 Fax: 82-2-558-5934

Atlanta

No. 6 Chaoyangmen Beidajie

Beijing, 100027, No. China

Tel: 86-10-85282100 Fax: 86-10-85282104

500 Sugar Mill Road, Suite 200B

Atlanta, GA 30350

Singapore

Microchip Technology Singapore Pte Ltd.

200 Middle Road

Tel: 770-640-0034 Fax: 770-640-0307

China - Chengdu

#07-02 Prime Centre

Boston

Microchip Technology Consulting (Shanghai)

Co., Ltd., Chengdu Liaison Office

Rm. 2401, 24th Floor,

Singapore, 188980

2 Lan Drive, Suite 120

Westford, MA 01886

Tel: 978-692-3848 Fax: 978-692-3821

Tel: 65-6334-8870 Fax: 65-6334-8850

Taiwan

Ming Xing Financial Tower

Microchip Technology (Barbados) Inc.,

Taiwan Branch

Chicago

No. 88 TIDU Street

333 Pierce Road, Suite 180

Itasca, IL 60143

Chengdu 610016, China

11F-3, No. 207

Tel: 86-28-86766200 Fax: 86-28-86766599

Tung Hua North Road

Taipei, 105, Taiwan

Tel: 630-285-0071 Fax: 630-285-0075

China - Fuzhou

Dallas

Microchip Technology Consulting (Shanghai)

Co., Ltd., Fuzhou Liaison Office

Unit 28F, World Trade Plaza

Tel: 886-2-2717-7175 Fax: 886-2-2545-0139

4570 Westgrove Drive, Suite 160

Addison, TX 75001

Tel: 972-818-7423 Fax: 972-818-2924

No. 71 Wusi Road

EUROPE

Austria

Detroit

Fuzhou 350001, China

Tri-Atria Office Building

Tel: 86-591-7503506 Fax: 86-591-7503521

Microchip Technology Austria GmbH

Durisolstrasse 2

32255 Northwestern Highway, Suite 190

Farmington Hills, MI 48334

Tel: 248-538-2250 Fax: 248-538-2260

China - Shanghai

Microchip Technology Consulting (Shanghai)

Co., Ltd.

A-4600 Wels

Austria

Kokomo

Room 701, Bldg. B

Tel: 43-7242-2244-399

Fax: 43-7242-2244-393

Denmark

2767 S. Albright Road

Kokomo, Indiana 46902

Tel: 765-864-8360 Fax: 765-864-8387

Los Angeles

Far East International Plaza

No. 317 Xian Xia Road

Shanghai, 200051

Microchip Technology Nordic ApS

Regus Business Centre

Lautrup hoj 1-3

Tel: 86-21-6275-5700 Fax: 86-21-6275-5060

18201 Von Karman, Suite 1090

Irvine, CA 92612

China - Shenzhen

Microchip Technology Consulting (Shanghai)

Co., Ltd., Shenzhen Liaison Office

Rm. 1315, 13/F, Shenzhen Kerry Centre,

Renminnan Lu

Ballerup DK-2750 Denmark

Tel: 949-263-1888 Fax: 949-263-1338

Tel: 45 4420 9895 Fax: 45 4420 9910

New York

France

150 Motor Parkway, Suite 202

Hauppauge, NY 11788

Microchip Technology SARL

Parc d’Activite du Moulin de Massy

43 Rue du Saule Trapu

Shenzhen 518001, China

Tel: 631-273-5305 Fax: 631-273-5335

Tel: 86-755-2350361 Fax: 86-755-2366086

San Jose

China - Hong Kong SAR

Batiment A - ler Etage

Microchip Technology Inc.

2107 North First Street, Suite 590

San Jose, CA 95131

Microchip Technology Hongkong Ltd.

Unit 901-6, Tower 2, Metroplaza

223 Hing Fong Road

91300 Massy, France

Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79

Germany

Tel: 408-436-7950 Fax: 408-436-7955

Kwai Fong, N.T., Hong Kong

Microchip Technology GmbH

Steinheilstrasse 10

Tel: 852-2401-1200 Fax: 852-2401-3431

Toronto

6285 Northam Drive, Suite 108

Mississauga, Ontario L4V 1X5, Canada

Tel: 905-673-0699 Fax: 905-673-6509

India

D-85737 Ismaning, Germany

Tel: 49-89-627-144 0 Fax: 49-89-627-144-44

Microchip Technology Inc.

India Liaison Office

Italy

Divyasree Chambers

Microchip Technology SRL

Centro Direzionale Colleoni

Palazzo Taurus 1 V. Le Colleoni 1

20041 Agrate Brianza

1 Floor, Wing A (A3/A4)

No. 11, O’Shaugnessey Road

Bangalore, 560 025, India

Tel: 91-80-2290061 Fax: 91-80-2290062

Milan, Italy

Tel: 39-039-65791-1 Fax: 39-039-6899883

United Kingdom

Microchip Ltd.

505 Eskdale Road

Winnersh Triangle

Wokingham

Berkshire, England RG41 5TU

Tel: 44 118 921 5869 Fax: 44-118 921-5820

08/01/02

DS21449C-page 28

2002 Microchip Technology Inc.

型号:	TC649BEOA
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	MICROCHIP TECHNOLOGY INC
零件包装代码：	SOIC
包装说明：	SOP, SOP8,.25
针数：	8
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
Factory Lead Time：	24 weeks
风险等级：	0.72
Is Samacsys：	N
模拟集成电路 - 其他类型：	BRUSHLESS DC MOTOR CONTROLLER
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
长度：	4.9 mm
湿度敏感等级：	3
功能数量：	1
端子数量：	8
最高工作温度：	85 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP
封装等效代码：	SOP8,.25
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
电源：	3.3/5 V
认证状态：	Not Qualified
座面最大高度：	1.75 mm
子类别：	Motion Control Electronics
最大供电电流 (Isup)：	0.4 mA
最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	3 V
标称供电电压 (Vsup)：	5 V
表面贴装：	YES
温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
宽度：	3.9116 mm
Base Number Matches：	1

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