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产品型号TDA7294的概述

一、TDA7294的概述 TDA7294是一款高性能的音频功率放大器，专为A类和AB类音频放大应用设计，广泛应用于车载音响、家庭音响以及各种中高功率音频放大器系统。此芯片由意法半导体（STMicroelectronics）生产，优势包括高效率、出色的音质以及良好的热稳定性。TDA7294可以提供大功率的输出，适合音响系统的多种需求。该芯片采用了集成电路（IC）技术，具备内置的保护电路，包括过热、短路和过压保护等，有效地提高了其使用的安全性和可靠性。作为一款单声道放大器，TDA7294有利于简化音频系统的设计。二、TDA7294的详细参数 TDA7294的主要参数如下： - 输出功率：输出功率最高可达100 W（在4Ω负载条件下），65 W（在8Ω负载条件下）。 - 工作电压：供电电压范围为14.4V至38V。 - 频率响应：20 Hz至20 kHz。 - 总谐波失真(THD)：在额...

产品型号TDA7294的Datasheet PDF文件预览

TDA7294

100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY

VERY HIGH OPERATING VOLTAGE RANGE

(±40V)

MULTIPOWER BCD TECHNOLOGY

DMOS POWER STAGE

HIGH OUTPUT POWER (UP TO 100W MU-

SIC POWER)

MUTING/STAND-BY FUNCTIONS

NO SWITCH ON/OFF NOISE

NO BOUCHEROT CELLS

VERY LOW DISTORTION

Multiwatt15

ORDERING NUMBER: TDA7294V

VERY LOW NOISE

SHORT CIRCUIT PROTECTION

THERMAL SHUTDOWN

to the high out current capability it is able to sup-

ply the highest power into both 4Ω and 8Ω loads

even in presence of poor supply regulation, with

high Supply Voltage Rejection.

The built in muting function with turn on delay

simplifies the remote operation avoiding switching

on-off noises.

DESCRIPTION

The TDA7294 is a monolithic integrated circuit in

Multiwatt15 package, intended for use as audio

class AB amplifier in Hi-Fi field applications

(Home Stereo, self powered loudspeakers, Top-

class TV). Thanks to the wide voltage range and

Figure 1: Typical Application and Test Circuit

C7 100nF

+Vs C6 1000µF

R3 22K

+Vs

+PWVs

22µF

TDA7294

680Ω

IN-

OUT

C1 470nF

IN+

22µF

R1 22K

IN+MUTE

BOOTSTRAP

R5 10K MUTE

STBY

MUTE

STBY

THERMAL

SHUTDOWN

S/C

PROTECTION

VSTBY

R4 22K

STBY-GND

-Vs

-PWVs

C3 10µF

C4 10µF

C9 100nF

C8 1000µF

D93AU011

-Vs

February 1996

1/16

TDA7294

PIN CONNECTION (Topview)

TAB connected to -V_S

BLOCK DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

±50

Unit

V_S

I_O

Supply Voltage (No Signal)

Output Peak Current

P_tot

Power Dissipation T_case= 70°C

T_op

Operating Ambient Temperature Range

Storage and Junction Temperature

0 to 70

150

°C

T_stg, T_j

2/16

TDA7294

THERMAL DATA

Symbol

Description

Thermal Resistance Junction-case

Value

Unit

R_{th j-case}

Max

1.5

°C/W

ELECTRICAL CHARACTERISTICS (Refer to the Test Circuit V_S= ±35V, R_L= 8Ω, G_V= 30dB;

R_g= 50 Ω; T_amb= 25°C, f = 1 kHz; unless otherwise specified.

Symbol

V_S

Parameter

Supply Range

Test Condition

Min.

±10

Typ.

Max.

±40

Unit

I_q

Quiescent Current

I_b

Input Bias Current

500

+10

+100

V_OS

I_OS

Input Offset Voltage

Input Offset Current

RMS Continuous Output Power

P_O

d = 0.5%:

V_S= ± 35V, R_L= 8Ω

V_S= ± 31V, R_L= 6Ω

V_S= ± 27V, R_L= 4Ω

Music Power (RMS)

d = 10%

IEC268.3 RULES - ∆t = 1s (*)

R_L= 8

R_L= 6

R_L= 4

Ω

; V_S= ±38V

; V_S= ±33V

; V_S= ±29V (***)

100

Total Harmonic Distortion (**)

_O= 5W; f = 1kHz

0.005

P_O= 0.1 to 50W; f = 20Hz to 20kHz

0.1

V_S= ±27V, R_L= 4Ω:

_O= 5W; f = 1kHz

_O= 0.1 to 50W; f = 20Hz to 20kHz

0.01

G_V

e_N

Slew Rate

V/µs

Open Loop Voltage Gain

Closed Loop Voltage Gain

Total Input Noise

A = curve

f = 20Hz to 20kHz

µV

f_L, f_H

R_i

Frequency Response (-3dB)

Input Resistance

P_O= 1W

20Hz to 20kHz

100

kΩ

°C

SVR

T_S

Supply Voltage Rejection

Thermal Shutdown

f = 100Hz; V_ripple= 0.5Vrms

145

STAND-BY FUNCTION (Ref: -V_Sor GND)

V_{ST on}

V_{ST off}

Stand-by on Threshold

Stand-by off Threshold

1.5

3.5

ATT_st-byStand-by Attenuation

I_{q st-by}

Quiescent Current @ Stand-by

MUTE FUNCTION (Ref: -V_Sor GND)

V_Mon

V_Moff

Mute on Threshold

Mute off Threshold

1.5

3.5

ATT_muteMute AttenuatIon

Note (*):

MUSIC POWER CONCEPT

MUSIC POWER is the maximal power which the amplifier is capable of producing across the rated load resistance (regardless of non linearity)

1 sec after the application of a sinusoidal input signal of frequency 1KHz.

Note (**): Tested with optimized Application Board (see fig. 2)

Note (***): Limited by the max. allowable current.

3/16

TDA7294

Figure 2: P.C.B. and components layout of the circuit of figure 1. (1:1 scale)

Note:

The Stand-by and Mute functions can be referred either to GND or -VS.

On the P.C.B. is possible to set both the configuration through the jumper J1.

4/16

TDA7294

APPLICATION SUGGESTIONS (see Test and ApplicationCircuits of the Fig. 1)

The recommended values of the external components are those shown on the application circuit of Fig-

ure 1. Different values can be used; the following table can help the designer.

LARGER THAN

SUGGESTED

SMALLER THAN

SUGGESTED

COMPONENTS

SUGGESTED VALUE

PURPOSE

R1 (*)

22k

INPUT RESISTANCE

INCREASE INPUT

IMPRDANCE

DECREASE INPUT

IMPEDANCE

R3 (*)

680Ω

22k

CLOSED LOOP GAIN DECREASE OF GAIN INCREASE OF GAIN

SET TO 30dB (**)

INCREASE OF GAIN DECREASE OF GAIN

22k

ST-BY TIME

CONSTANT

LARGER ST-BY

ON/OFF TIME

SMALLER ST-BY

ON/OFF TIME;

POP NOISE

10k

MUTE TIME

CONSTANT

LARGER MUTE

ON/OFF TIME

SMALLER MUTE

ON/OFF TIME

0.47µF

INPUT DC

DECOUPLING

HIGHER LOW

FREQUENCY

CUTOFF

22µF

FEEDBACK DC

DECOUPLING

HIGHER LOW

FREQUENCY

CUTOFF

10µF

MUTE TIME

CONSTANT

LARGER MUTE

ON/OFF TIME

SMALLER MUTE

ON/OFF TIME

ST-BY TIME

CONSTANT

LARGER ST-BY

ON/OFF TIME

SMALLER ST-BY

ON/OFF TIME;

POP NOISE

22µF

BOOTSTRAPPING

SIGNAL

DEGRADATION AT

LOW FREQUENCY

C6, C8

C7, C9

1000µF

0.1µF

SUPPLY VOLTAGE

BYPASS

DANGER OF

OSCILLATION

SUPPLY VOLTAGE

BYPASS

DANGER OF

OSCILLATION

(*) R1 = R3 FOR POP OPTIMIZATION

(**) CLOSED LOOP GAIN HAS TO BE ≥ 24dB

5/16

TDA7294

TYPICAL CHARACTERISTICS

(ApplicationCircuit of fig 1 unless otherwise specified)

Figure 3: Output Power vs. Supply Voltage.

Figure 4: Distortion vs. Output Power

Figure 5: Output Power vs. Supply Voltage

Figure 6: Distortion vs. Output Power

Figure 8: Distortion vs. Frequency

Figure 7: Distortion vs. Frequency

6/16

TDA7294

TYPICAL CHARACTERISTICS (continued)

Figure 9: Quiescent Current vs. Supply Voltage

Figure10: SupplyVoltage Rejectionvs. Frequency

Figure 11: Mute Attenuationvs. V_pin10

Figure 12: St-by Attenuationvs. V_pin9

Figure 14: PowerDissipation vs. Output Power

Figure 13: Power Dissipation vs. Output Power

7/16

TDA7294

monic distortion and good behaviour over fre-

quency response; moreover, an accurate control

of quiescent current is required.

A local linearizing feedback, provided by differen-

tial amplifier A, is used to fullfil the above require-

ments, allowing a simple and effective quiescent

current setting.

Proper biasing of the power output transistors

alone is however not enough to guarantee the ab-

sence of crossover distortion.

While a linearization of the DC transfer charac-

teristic of the stage is obtained, the dynamic be-

haviour of the system must be taken into account.

INTRODUCTION

In consumer electronics, an increasing demand

has arisen for very high power monolithic audio

amplifiers able to match, with a low cost the per-

formance obtained from the best discrete de-

signs.

The task of realizing this linear integrated circuit

in conventional bipolar technology is made ex-

tremely difficult by the occurence of 2nd break-

down phenomenon. It limits the safe operating

area (SOA) of the power devices, and as a con-

sequence, the maximum attainable output power,

especially in presence of highlyreactive loads.

Moreover, full exploitation of the SOA translates

into a substantial increase in circuit and layout

complexity due to the need for sophisticated pro-

tection circuits.

To overcome these substantial drawbacks, the

use of power MOS devices, which are immune

from secondary breakdown is highly desirable.

A significant aid in keeping the distortion contrib-

uted by the final stage as low as possible is pro-

vided by the compensation scheme, which ex-

ploits the direct connection of the Miller capacitor

at the amplifier’s output to introduce a local AC

feedback path enclosing the output stage itself.

The device described has therefore been devel-

oped in a mixed bipolar-MOS high voltage tech-

nology called BCD 100.

2) Protections

In designing a power IC, particular attention must

be reserved to the circuits devoted to protection

of the device from short circuit or overload condi-

tions.

1) Output Stage

Due to the absence of the 2nd breakdown phe-

nomenon, the SOA of the power DMOS transis-

tors is delimited only by a maximum dissipation

curve dependent on the duration of the applied

stimulus.

The main design taskone is confrontedwith while

developing an integrated circuit as a power op-

erational amplifier, independently of the technol-

ogy used, is that of realizing the output stage.

The solution shown as a principle shematic by Fig

15 represents the DMOS unity-gain output buffer

of the TDA7294.

This large-signal, high-power buffer must be ca-

pable of handling extremely high current and volt-

age levels while maintaining acceptably low har-

In order to fully exploit the capabilities of the

power transistors, the protection scheme imple-

mented in this device combines a conventional

SOA protection circuit with a novel local tempera-

ture sensing technique which ” dynamically” con-

trols the maximum dissipation.

Figure 15: Principle Schematic of a DMOS unity-gain buffer.

8/16

TDA7294

Figure 16: Turn ON/OFF Suggested Sequence

+Vs

(V)

+35

-35

-Vs

(mV)

ST-BY

PIN #9

(V)

MUTE

PIN #10

(V)

(mA)

OUT

(V)

OFF

ST-BY

PLAY

ST-BY

OFF

MUTE

D93AU013

Tj = 150 ^oC).

Full protection against electrostatic discharges on

every pin is included.

In addition to the overload protection described

above, the device features a thermal shutdown

circuit which initially puts the device into a muting

state (@ Tj = 145 ^oC) and then into stand-by (@

3) Other Features

Figure 17: Single Signal ST-BY/MUTE Control

Circuit

The device is provided with both stand-by and

mute functions, independently driven by two

CMOS logic compatibleinput pins.

The circuits dedicated to the switching on and off

of the amplifier have been carefully optimized to

avoid any kind of uncontrolled audible transient at

the output.

The sequence that we recommend during the

ON/OFF transients is shown by Figure 16.

MUTE

STBY

20K

30K

MUTE/

ST-BY

10K

The application of figure 17 shows the possibility

of using only one command for both st-by and

mute functions. On both the pins, the maximum

applicable range corresponds to the operating

supply voltage.

10µF

1N4148

D93AU014

9/16

TDA7294

APPLICATION INFORMATION

HIGH-EFFICIENCY

From fig. 20, where the maximum power is

around 200 W, we get an average of 20 W, in this

condition, for a class AB amplifier the average

power dissipation is equal to 65 W.

Constraints of implementing high power solutions

are the power dissipation and the size of the

power supply. These are both due to the low effi-

ciency of conventional AB class amplifier ap-

proaches.

The typical junction-to-case thermal resistance of

the TDA7294 is 1 C/W (max= 1.5 C/W). To

avoid that, in worst case conditions, the chip tem-

perature exceedes 150 ^oC, the thermal resistance

of the heatsink must be 0.038 ^oC/W (@ max am-

bient temperature of 50 ^oC).

Here below (figure 18) is described a circuit pro-

posal for a high efficiency amplifier which can be

adopted for both HI-FI and CAR-RADIO applica-

tions.

The TDA7294 is a monolithic MOS power ampli-

fier which can be operated at 80V supply voltage

(100V with no signal applied) while delivering out-

put currents up to ±10 A.

As the above value is pratically unreachable; a

high efficiency system is needed in those cases

where the continuousRMS output power is higher

than 50-60 W.

The TDA7294 was designed to work also in

higher efficiency way.

This allows the use of this device as a very high

power amplifier (up to 180W as peak power with

T.H.D.=10 % and Rl = 4 Ohm); the only drawback

is the power dissipation, hardly manageable in

the above power range.

Figure 20 shows the power dissipation versus

output power curve for a class AB amplifier, com-

pared with a high efficiency one.

In order to dimension the heatsink (and the power

supply), a generally used average output power

value is one tenth of the maximum output power

at T.H.D.=10 %.

For this reason there are four power supply pins:

two intended for the signal part and two for the

power part.

T1 and T2 are two power transistors that only op-

erate when the output power reaches a certain

threshold (e.g. 20 W). If the output power in-

creases, these transistors are switched on during

the portion of the signal where more output volt-

age swing is needed, thus ”bootstrapping” the

power supply pins (#13 and #15).

The current generators formed by T4, T7, zener

Figure 18: High Efficiency Application Circuit

+40V

BC394

270

BDX53A

D1 BYW98100

BC393

+20V

270

L1 1µH

D3 1N4148

20K

C11 330nF

Z1 3.9V

C11 22µF

1000µF

100nF

1000µF

100nF

330nF

R3 680

R16

13K

C16

3.3K

1.8nF

R16

L3 5µH

13K

TDA7294

PLAY

OUT

C13 10µF

GND

270

C15

22µF

R13 20K

R14 30K

R15 10K

ST-BY

3.3K

C17

1.8nF

1N4148

C10

330nF

Z2 3.9V

1000µF

100nF

1000µF

100nF

C14

10µF

L2 1µH

D4 1N4148

BC394

D2 BYW98100

270

-20V

BDX54A

270

R10

270

R11

29K

BC393

-40V

D93AU016

10/16

TDA7294

Figure 19: P.C.B. and ComponentsLayout of the Circuit of figure 18 (1:1 scale)

diodes Z1,Z2 and resistors R7,R8 define the mini-

Results from efficiency measurements (4 and 8

Ohm loads, Vs = ±40V) are shown by figures 23

and 24. We have 3 curves: total power dissipa-

tion, power dissipation of the TDA7294 and

power dissipation of the darlingtons.

By considering again a maximum average

output power (music signal) of 20W, in case

of the high efficiency application, the thermal

resistance value needed from the heatsink is

2.2^oC/W (Vs =±40 V and Rl= 4 Ohm).

mum drop across the power MOS transistors of

the TDA7294. L1, L2, L3 and the snubbers C9,

R1 and C10, R2 stabilize the loops formed by the

”bootstrap” circuits and the output stage of the

TDA7294.

In figures 21,22 the performances of the system

in terms of distortion and output power at various

frequencies (measured on PCB shown in fig. 19)

are displayed.

The output power that the TDA7294 in high-

efficiency application is able to supply at

Vs = +40V/+20V/-20V/-40V; f =1 KHz is:

All components (TDA7294 and power transistors

T1 and T2) can be placed on a 1.5^oC/W heatsink,

with the power darlingtons electrically insulated

from the heatsink.

- Pout = 150 W @ T.H.D.=10 % with Rl= 4 Ohm

- Pout = 120 W @ ”

- Pout = 100 W @ ”

- Pout = 80 W @ ”

= 1 % ”

=10 % with Rl= 8 Ohm

= 1 % ”

”

Since the total power dissipation is less than that

of a usual class AB amplifier, additional cost sav-

ings can be obtained while optimizing the power

supply, even with a high headroom.

”

11/16

TDA7294

Figure 21: Distortion vs. Output Power

Figure 20: Power Dissipation vs. Output Power

HIGH-EFFICIENCY

Figure 22: Distortion vs. Output Power

Figure 23: PowerDissipation vs. Output Power

Figure 24: Power Dissipation vs. Output Power

12/16

TDA7294

BRIDGE APPLICATION

- High power performances with limited supply

voltagelevel.

Another application suggestion is the BRIDGE

configuration, where two TDA7294 are used, as

shown by the schematic diagram of figure 25.

- Considerablyhigh output power even with high

load values (i.e. 16 Ohm).

In this application, the value of the load must not

be lower than 8 Ohm for dissipation and current

capability reasons.

The characteristics shown by figures 27 and 28,

measured with loads respectively 8 Ohm and 16

Ohm.

A suitable field of application includes HI-FI/TV

subwoofers realizations.

The main advantagesoffered by this solution are:

With Rl= 8 Ohm, Vs = ±25V the maximum output

power obtainable is 150 W, while with Rl=16

Ohm, Vs = ±35V the maximum Pout is 170 W.

Figure 25: Bridge ApplicationCircuit

+Vs

0.22µF

2200µF

22µF

0.56µF

22K

680

TDA7294

ST-BY/MUTE

20K

22µF

22K

-Vs

0.22µF

2200µF

1N4148

10K

30K

22µF

TDA7294

22µF

0.56µF

22K

680

D93AU015A

13/16

TDA7294

Figure 27: Distortion vs. Output Power

Figure 26: FrequencyResponse of the Bridge

Application

Figure 28: Distortion vs. Output Power

14/16

TDA7294

MULTIWATT15 PACKAGE MECHANICAL DATA (Vertical)

inch

TYP.

DIM.

MIN.

TYP.

MAX.

MIN.

MAX.

0.197

0.104

0.063

2.65

1.6

0.039

0.49

0.66

1.14

17.57

19.6

0.55

0.75

1.4

0.019

0.026

0.045

0.692

0.772

0.022

0.030

0.055

0.705

1.27

0.050

0.700

17.78

17.91

20.2

22.6

22.5

18.1

17.75

10.9

2.9

0.795

0.890

0.886

0.713

0.699

0.429

0.114

0.181

0.209

0.102

0.152

22.1

0.870

0.866

0.695

0.679

0.406

0.104

0.165

0.177

0.075

0.144

17.65

17.25

10.3

2.65

4.2

17.5

10.7

0.689

0.421

4.3

4.6

0.169

0.200

4.5

5.08

5.3

1.9

2.6

Dia1

1.9

2.6

3.65

3.85

15/16

TDA7294

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No

license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications men-

tioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without ex-

press written approval of SGS-THOMSON Microelectronics.

1996 SGS-THOMSON Microelectronics AllRights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore -

Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom- U.S.A.

16/16

TDA7294相关文章

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TDA7294产品参数

型号:	TDA7294
是否Rohs认证：	不符合
生命周期：	Active
IHS 制造商：	STMICROELECTRONICS
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5.83
商用集成电路类型：	AUDIO AMPLIFIER
JESD-30 代码：	R-PZIP-T15
JESD-609代码：	e0
功能数量：	1
端子数量：	15
最高工作温度：	70 °C
最低工作温度：
封装主体材料：	PLASTIC/EPOXY
封装代码：	ZIP
封装等效代码：	ZIP15,.2,.17TB
封装形状：	RECTANGULAR
封装形式：	IN-LINE
认证状态：	Not Qualified
子类别：	Audio/Video Amplifiers
表面贴装：	NO
温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子节距：	1.27 mm
端子位置：	ZIG-ZAG

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