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  • 深圳市芯福林电子有限公司

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  • TDA7294HS
  • 数量65000 
  • 厂家ST 
  • 封装MULTIWATT 
  • 批号23+ 
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  • TDA7294HS
  • 数量23480 
  • 厂家ST 
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  • 深圳市芯鹏泰科技有限公司

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  • TDA7294HS
  • 数量7536 
  • 厂家STMicroelectronics 
  • 封装15-Multiwatt 
  • 批号23+ 
  • 放大器音频IC原装现货
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  • 深圳市高捷芯城科技有限公司

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  • TDA7294HS
  • 数量7810 
  • 厂家ST(意法半导体) 
  • 封装Multiwatt-15H 
  • 批号23+ 
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  • 数量4942 
  • 厂家ST/意法 
  • 封装NA/ 
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  • 数量583 
  • 厂家STMicroelectronics 
  • 封装 
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  • 深圳市欧瑞芯科技有限公司

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  • TDA7294HS
  • 数量10000 
  • 厂家ST(意法) 
  • 封装Multiwatt-15(水平,弯曲和错列引线) 
  • 批号23+/24+ 
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  • 首天国际(深圳)科技有限公司

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  • TDA7294HS
  • 数量5000 
  • 厂家STMicroelectronics 
  • 封装标准封装 
  • 批号2024+ 
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  • 深圳市晶美隆科技有限公司

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  • TDA7294HS
  • 数量11530 
  • 厂家STMicroelectronics 
  • 封装Multiwatt-15(水平型,彎曲和交錯引線) 
  • 批号23+ 
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  • 深圳市毅创腾电子科技有限公司

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  • TDA7294HS
  • 数量1692 
  • 厂家STM 
  • 封装MULTIWATT 
  • 批号22+ 
  • ★只做原装★正品现货★原盒原标★
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  • TDA7294HS
  • 数量5000 
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  • 深圳市宏世佳电子科技有限公司

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  • TDA7294HS
  • 数量3550 
  • 厂家ST 
  • 封装15-Multiwatt 
  • 批号2023+ 
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  • 北京元坤伟业科技有限公司

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  • TDA7294HS
  • 数量5000 
  • 厂家欧美编号 435 
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  • 深圳市惊羽科技有限公司

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  • TDA7294HS
  • 数量6328 
  • 厂家ST-意法半导体 
  • 封装15-SIP 
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  • 深圳市宏世佳电子科技有限公司

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  • TDA7294HS
  • 数量3550 
  • 厂家ST 
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  • 深圳市宗天技术开发有限公司

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  • TDA7294HS
  • 数量1921 
  • 厂家ST 
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  • 批号21+ 
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  • 深圳市中杰盛科技有限公司

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  • TDA7294HS
  • 数量12000 
  • 厂家ST 
  • 封装MULTIWATT-15 H 
  • 批号24+ 
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  • 深圳市宏世佳电子科技有限公司

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  • TDA7294HS
  • 数量3577 
  • 厂家ST 
  • 封装15-Multiwatt 
  • 批号2023+ 
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  • 深圳市勤思达科技有限公司

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  • 数量55700 
  • 厂家STMICROELECTRONICS 
  • 封装MULTIWATT15 
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  • 万三科技(深圳)有限公司

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  • TDA7294HS
  • 数量660000 
  • 厂家STM(STMicroelectronics) 
  • 封装Multiwatt-15 
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  • 数量6500000 
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  • 昂富(深圳)电子科技有限公司

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  • TDA7294HS
  • 数量52822 
  • 厂家ST/意法 
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  • 深圳市一线半导体有限公司

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  • 数量14500 
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  • 数量8000 
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  • 深圳市芯福林电子有限公司

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  • TDA7294HS
  • 数量98500 
  • 厂家ST/意法 
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  • 深圳市科雨电子有限公司

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  • TDA7294HS
  • 数量932 
  • 厂家STM 
  • 封装ZIP-15 
  • 批号24+ 
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产品型号TDA7294HS的概述

芯片TDA7294HS的概述 TDA7294HS是一款由意法半导体(STMicroelectronics)生产的高性能音频功率放大器芯片。该芯片特别设计用于高保真音频应用,具备高输出功率和低失真的特性,广泛用于频率响应范围要求较宽的音响系统中。TDA7294HS能够驱动多种负载,尤其是扬声器,适合用于家庭音响、车载音响以及其他高保真应用。 该芯片采用了先进的类AB放大技术,其设计目标是实现更高的功率效率,同时保持优质音频性能。TDA7294HS在输出功率、增益和失真等参数上表现出色,能够满足现代消费者对音频质量的严格要求。 芯片TDA7294HS的详细参数 TDA7294HS的主要参数如下: - 最大输出功率:该芯片在约4Ω负载时可以提供最大输出功率达到100W,在8Ω负载下也能稳定输出约70W。 - 电源电压范围:芯片的工作电压范围为12V到40V,这使得其在多样的电源配置下均可以正...

产品型号TDA7294HS的Datasheet PDF文件预览

TDA7294  
®
100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY  
VERY HIGH OPERATING VOLTAGE RANGE  
(±40V)  
MULTIPOWER BCD TECHNOLOGY  
DMOS POWER STAGE  
HIGH OUTPUT POWER (UP TO 100W MU-  
SIC POWER)  
MUTING/STAND-BY FUNCTIONS  
NO SWITCH ON/OFF NOISE  
NO BOUCHEROT CELLS  
VERY LOW DISTORTION  
VERY LOW NOISE  
Multiwatt15V  
Multiwatt15H  
ORDERING NUMBERS:  
TDA7294V  
TDA7294HS  
SHORT CIRCUIT PROTECTION  
THERMAL SHUTDOWN  
to the high out current capability it is able to sup-  
ply the highest power into both 4and 8loads  
even in presence of poor supply regulation, with  
high Supply Voltage Rejection.  
The built in muting function with turn on delay  
simplifies the remote operation avoiding switching  
on-off noises.  
DESCRIPTION  
The TDA7294 is a monolithic integrated circuit in  
Multiwatt15 package, intended for use as audio  
class AB amplifier in Hi-Fi field applications  
(Home Stereo, self powered loudspeakers, Top-  
class TV). Thanks to the wide voltage range and  
Figure 1: Typical Application and Test Circuit  
C7 100nF  
+Vs C6 1000µF  
R3 22K  
+Vs  
7
+PWVs  
13  
C2  
22µF  
R2  
680Ω  
IN-  
2
3
-
14  
6
OUT  
C1 470nF  
IN+  
+
C5  
22µF  
R1 22K  
IN+MUTE  
4
BOOT-  
STRAP  
R6  
2.7Ω  
R5 10K MUTE  
STBY  
10  
9
VM  
MUTE  
STBY  
1
THERMAL  
SHUTDOWN  
S/C  
PROTECTION  
C10  
100nF  
VSTBY  
R4 22K  
8
15  
STBY-GND  
-Vs  
-PWVs  
C3 10µF  
C4 10µF  
C9 100nF  
C8 1000µF  
D93AU011  
-Vs  
Note: The Boucherot cell R6, C10, normally not necessary for a stable operation it could  
be needed in presence of particular load impedances at VS <±25V.  
April 2003  
1/17  
TDA7294  
PIN CONNECTION (Top view)  
TAB connected to -VS  
BLOCK DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
±50  
Unit  
V
VS  
IO  
Supply Voltage (No Signal)  
Output Peak Current  
10  
A
Ptot  
Power Dissipation Tcase = 70°C  
50  
W
Top  
Operating Ambient Temperature Range  
Storage and Junction Temperature  
0 to 70  
150  
°C  
°C  
Tstg, Tj  
2/17  
TDA7294  
THERMAL DATA  
Symbol  
Description  
Value  
Unit  
Rth j-case  
Thermal Resistance Junction-case  
Max  
1.5  
°C/W  
ELECTRICAL CHARACTERISTICS (Refer to the Test Circuit VS = ±35V, RL = 8, GV = 30dB;  
Rg = 50 ; Tamb = 25°C, f = 1 kHz; unless otherwise specified.  
Symbol  
VS  
Parameter  
Supply Range  
Test Condition  
Min.  
±10  
20  
Typ.  
Max.  
±40  
65  
Unit  
V
Iq  
Quiescent Current  
30  
mA  
nA  
mV  
nA  
Ib  
Input Bias Current  
500  
+10  
+100  
VOS  
IOS  
Input Offset Voltage  
Input Offset Current  
RMS Continuous Output Power  
PO  
d = 0.5%:  
VS = ± 35V, RL = 8Ω  
VS = ± 31V, RL = 6Ω  
VS = ± 27V, RL = 4Ω  
60  
60  
60  
70  
70  
70  
W
W
W
Music Power (RMS)  
IEC268.3 RULES - t = 1s (*)  
d = 10%  
RL = 8; VS = ±38V  
RL = 6; VS = ±33V  
RL = 4; VS = ±29V (***)  
100  
100  
100  
W
W
W
d
Total Harmonic Distortion (**)  
PO = 5W; f = 1kHz  
PO = 0.1 to 50W; f = 20Hz to 20kHz  
0.005  
%
%
0.1  
0.1  
VS = ±27V, RL = 4Ω:  
PO = 5W; f = 1kHz  
PO = 0.1 to 50W; f = 20Hz to 20kHz  
0.01  
%
%
SR  
GV  
GV  
eN  
Slew Rate  
7
10  
80  
30  
V/µs  
dB  
Open Loop Voltage Gain  
Closed Loop Voltage Gain  
Total Input Noise  
24  
40  
5
dB  
A = curve  
f = 20Hz to 20kHz  
1
2
µV  
µV  
fL, fH  
Ri  
Frequency Response (-3dB)  
Input Resistance  
PO = 1W  
20Hz to 20kHz  
100  
60  
kΩ  
dB  
°C  
SVR  
TS  
Supply Voltage Rejection  
Thermal Shutdown  
f = 100Hz; Vripple = 0.5Vrms  
75  
145  
STAND-BY FUNCTION (Ref: -VS or GND)  
VST on  
VST off  
Stand-by on Threshold  
Stand-by off Threshold  
1.5  
V
V
3.5  
70  
ATTst-by Stand-by Attenuation  
90  
dB  
mA  
Iq st-by  
Quiescent Current @ Stand-by  
1
3
MUTE FUNCTION (Ref: -VS or GND)  
VMon  
VMoff  
Mute on Threshold  
Mute off Threshold  
1.5  
V
V
3.5  
60  
ATTmute Mute AttenuatIon  
80  
dB  
Note (*):  
MUSIC POWER CONCEPT  
MUSIC POWER is the maximal power which the amplifier is capable of producing across the rated load resistance (regardless of non linearity)  
1 sec after the application of a sinusoidal input signal of frequency 1KHz.  
Note (**): Tested with optimized Application Board (see fig. 2)  
Note (***): Limited by the max. allowable current.  
3/17  
TDA7294  
Figure 2: P.C.B. and components layout of the circuit of figure 1. (1:1 scale)  
Note:  
The Stand-by and Mute functions can be referred either to GND or -VS.  
On the P.C.B. is possible to set both the configuration through the jumper J1.  
4/17  
TDA7294  
APPLICATION SUGGESTIONS (see Test and Application Circuits of the Fig. 1)  
The recommended values of the external components are those shown on the application circuit of Fig-  
ure 1. Different values can be used; the following table can help the designer.  
LARGER THAN  
SUGGESTED  
SMALLER THAN  
SUGGESTED  
COMPONENTS  
SUGGESTED VALUE  
PURPOSE  
R1 (*)  
22k  
INPUT RESISTANCE  
INCREASE INPUT  
IMPRDANCE  
DECREASE INPUT  
IMPEDANCE  
R2  
R3 (*)  
R4  
680Ω  
22k  
CLOSED LOOP GAIN DECREASE OF GAIN INCREASE OF GAIN  
SET TO 30dB (**)  
INCREASE OF GAIN DECREASE OF GAIN  
22k  
ST-BY TIME  
CONSTANT  
LARGER ST-BY  
ON/OFF TIME  
SMALLER ST-BY  
ON/OFF TIME;  
POP NOISE  
R5  
C1  
10k  
MUTE TIME  
CONSTANT  
LARGER MUTE  
ON/OFF TIME  
SMALLER MUTE  
ON/OFF TIME  
0.47µF  
INPUT DC  
DECOUPLING  
HIGHER LOW  
FREQUENCY  
CUTOFF  
C2  
22µF  
FEEDBACK DC  
DECOUPLING  
HIGHER LOW  
FREQUENCY  
CUTOFF  
C3  
C4  
10µF  
10µF  
MUTE TIME  
CONSTANT  
LARGER MUTE  
ON/OFF TIME  
SMALLER MUTE  
ON/OFF TIME  
ST-BY TIME  
CONSTANT  
LARGER ST-BY  
ON/OFF TIME  
SMALLER ST-BY  
ON/OFF TIME;  
POP NOISE  
C5  
22µF  
BOOTSTRAPPING  
SIGNAL  
DEGRADATION AT  
LOW FREQUENCY  
C6, C8  
C7, C9  
1000µF  
0.1µF  
SUPPLY VOLTAGE  
BYPASS  
DANGER OF  
OSCILLATION  
SUPPLY VOLTAGE  
BYPASS  
DANGER OF  
OSCILLATION  
(*) R1 = R3 FOR POP OPTIMIZATION  
(**) CLOSED LOOP GAIN HAS TO BE 24dB  
5/17  
TDA7294  
TYPICAL CHARACTERISTICS  
(Application Circuit of fig 1 unless otherwise specified)  
Figure 3: Output Power vs. Supply Voltage.  
Figure 4: Distortion vs. Output Power  
Figure 5: Output Power vs. Supply Voltage  
Figure 6: Distortion vs. Output Power  
Figure 8: Distortion vs. Frequency  
Figure 7: Distortion vs. Frequency  
6/17  
TDA7294  
TYPICAL CHARACTERISTICS (continued)  
Figure 9: Quiescent Current vs. Supply Voltage  
Figure 10: SupplyVoltage Rejection vs. Frequency  
Figure 11: Mute Attenuation vs. Vpin10  
Figure 12: St-by Attenuation vs. Vpin9  
Figure 14: Power Dissipation vs. Output Power  
Figure 13: Power Dissipation vs. Output Power  
7/17  
TDA7294  
monic distortion and good behaviour over fre-  
quency response; moreover, an accurate control  
of quiescent current is required.  
A local linearizing feedback, provided by differen-  
tial amplifier A, is used to fullfil the above require-  
ments, allowing a simple and effective quiescent  
current setting.  
Proper biasing of the power output transistors  
alone is however not enough to guarantee the ab-  
sence of crossover distortion.  
While a linearization of the DC transfer charac-  
teristic of the stage is obtained, the dynamic be-  
haviour of the system must be taken into account.  
INTRODUCTION  
In consumer electronics, an increasing demand  
has arisen for very high power monolithic audio  
amplifiers able to match, with a low cost the per-  
formance obtained from the best discrete de-  
signs.  
The task of realizing this linear integrated circuit  
in conventional bipolar technology is made ex-  
tremely difficult by the occurence of 2nd break-  
down phenomenon. It limits the safe operating  
area (SOA) of the power devices, and as a con-  
sequence, the maximum attainable output power,  
especially in presence of highly reactive loads.  
Moreover, full exploitation of the SOA translates  
into a substantial increase in circuit and layout  
complexity due to the need for sophisticated pro-  
tection circuits.  
To overcome these substantial drawbacks, the  
use of power MOS devices, which are immune  
from secondary breakdown is highly desirable.  
A significant aid in keeping the distortion contrib-  
uted by the final stage as low as possible is pro-  
vided by the compensation scheme, which ex-  
ploits the direct connection of the Miller capacitor  
at the amplifier’s output to introduce a local AC  
feedback path enclosing the output stage itself.  
The device described has therefore been devel-  
oped in a mixed bipolar-MOS high voltage tech-  
nology called BCD 100.  
2) Protections  
In designing a power IC, particular attention must  
be reserved to the circuits devoted to protection  
of the device from short circuit or overload condi-  
tions.  
1) Output Stage  
Due to the absence of the 2nd breakdown phe-  
nomenon, the SOA of the power DMOS transis-  
tors is delimited only by a maximum dissipation  
curve dependent on the duration of the applied  
stimulus.  
In order to fully exploit the capabilities of the  
power transistors, the protection scheme imple-  
mented in this device combines a conventional  
SOA protection circuit with a novel local tempera-  
ture sensing technique which " dynamically" con-  
trols the maximum dissipation.  
The main design task one is confronted with while  
developing an integrated circuit as a power op-  
erational amplifier, independently of the technol-  
ogy used, is that of realizing the output stage.  
The solution shown as a principle shematic by Fig  
15 represents the DMOS unity-gain output buffer  
of the TDA7294.  
This large-signal, high-power buffer must be ca-  
pable of handling extremely high current and volt-  
age levels while maintaining acceptably low har-  
Figure 15: Principle Schematic of a DMOS unity-gain buffer.  
8/17  
TDA7294  
Figure 16: Turn ON/OFF Suggested Sequence  
+Vs  
(V)  
+35  
-35  
-Vs  
V
(mV)  
IN  
V
ST-BY  
5V  
5V  
PIN #9  
(V)  
V
MUTE  
PIN #10  
(V)  
I
P
(mA)  
V
OUT  
(V)  
OFF  
ST-BY  
PLAY  
ST-BY  
OFF  
MUTE  
MUTE  
D93AU013  
Tj = 150 oC).  
In addition to the overload protection described  
above, the device features a thermal shutdown  
circuit which initially puts the device into a muting  
state (@ Tj = 145 oC) and then into stand-by (@  
Full protection against electrostatic discharges on  
every pin is included.  
3) Other Features  
Figure 17: Single Signal ST-BY/MUTE Control  
Circuit  
The device is provided with both stand-by and  
mute functions, independently driven by two  
CMOS logic compatible input pins.  
The circuits dedicated to the switching on and off  
of the amplifier have been carefully optimized to  
avoid any kind of uncontrolled audible transient at  
the output.  
The sequence that we recommend during the  
ON/OFF transients is shown by Figure 16.  
MUTE  
STBY  
20K  
30K  
MUTE/  
ST-BY  
10K  
10µF  
10µF  
The application of figure 17 shows the possibility  
of using only one command for both st-by and  
mute functions. On both the pins, the maximum  
applicable range corresponds to the operating  
supply voltage.  
1N4148  
D93AU014  
9/17  
TDA7294  
APPLICATION INFORMATION  
HIGH-EFFICIENCY  
From fig. 20, where the maximum power is  
around 200 W, we get an average of 20 W, in this  
condition, for a class AB amplifier the average  
power dissipation is equal to 65 W.  
Constraints of implementing high power solutions  
are the power dissipation and the size of the  
power supply. These are both due to the low effi-  
ciency of conventional AB class amplifier ap-  
proaches.  
The typical junction-to-case thermal resistance of  
o
o
the TDA7294 is 1 C/W (max= 1.5 C/W). To  
avoid that, in worst case conditions, the chip tem-  
perature exceedes 150 oC, the thermal resistance  
of the heatsink must be 0.038 oC/W (@ max am-  
bient temperature of 50 oC).  
Here below (figure 18) is described a circuit pro-  
posal for a high efficiency amplifier which can be  
adopted for both HI-FI and CAR-RADIO applica-  
tions.  
The TDA7294 is a monolithic MOS power ampli-  
fier which can be operated at 80V supply voltage  
(100V with no signal applied) while delivering out-  
put currents up to ±10 A.  
This allows the use of this device as a very high  
power amplifier (up to 180W as peak power with  
T.H.D.=10 % and Rl = 4 Ohm); the only drawback  
is the power dissipation, hardly manageable in  
the above power range.  
Figure 20 shows the power dissipation versus  
output power curve for a class AB amplifier, com-  
pared with a high efficiency one.  
As the above value is pratically unreachable; a  
high efficiency system is needed in those cases  
where the continuous RMS output power is higher  
than 50-60 W.  
The TDA7294 was designed to work also in  
higher efficiency way.  
For this reason there are four power supply pins:  
two intended for the signal part and two for the  
power part.  
T1 and T2 are two power transistors that only op-  
erate when the output power reaches a certain  
threshold (e.g. 20 W). If the output power in-  
creases, these transistors are switched on during  
the portion of the signal where more output volt-  
age swing is needed, thus "bootstrapping" the  
power supply pins (#13 and #15).  
In order to dimension the heatsink (and the power  
supply), a generally used average output power  
value is one tenth of the maximum output power  
at T.H.D.=10 %.  
The current generators formed by T4, T7, zener  
Figure 18: High Efficiency Application Circuit  
+40V  
T3  
BC394  
R4  
270  
R5  
270  
T1  
BDX53A  
D1 BYW98100  
T4  
BC393  
T5  
BC393  
+20V  
270  
L1 1µH  
D3 1N4148  
R6  
20K  
C11 330nF  
Z1 3.9V  
C11 22µF  
7
13  
C1  
1000µF  
C3  
100nF  
C5  
1000µF  
C7  
100nF  
C9  
330nF  
IN  
3
R3 680  
R16  
13K  
2
R7  
C16  
3.3K  
1.8nF  
R1  
2
R16  
L3 5µH  
4
9
13K  
TDA7294  
PLAY  
14  
OUT  
C13 10µF  
GND  
270  
C15  
22µF  
R13 20K  
R14 30K  
R15 10K  
ST-BY  
6
1
R8  
3.3K  
C17  
1.8nF  
R2  
2
D5  
1N4148  
8
15  
C2  
C4  
C6  
C8  
C10  
330nF  
10  
Z2 3.9V  
1000µF  
100nF  
1000µF  
100nF  
C14  
10µF  
L2 1µH  
D4 1N4148  
T7  
T8  
BC394  
BC394  
D2 BYW98100  
270  
-20V  
T2  
BDX54A  
R9  
270  
R10  
270  
R11  
29K  
T6  
BC393  
-40V  
D93AU016  
10/17  
TDA7294  
Figure 19: P.C.B. and Components Layout of the Circuit of figure 18 (1:1 scale)  
diodes Z1,Z2 and resistors R7,R8 define the mini-  
Results from efficiency measurements (4 and 8  
Ohm loads, Vs = ±40V) are shown by figures 23  
and 24. We have 3 curves: total power dissipa-  
tion, power dissipation of the TDA7294 and  
power dissipation of the darlingtons.  
By considering again a maximum average  
output power (music signal) of 20W, in case  
of the high efficiency application, the thermal  
resistance value needed from the heatsink is  
2.2oC/W (Vs =±40 V and Rl= 4 Ohm).  
mum drop across the power MOS transistors of  
the TDA7294. L1, L2, L3 and the snubbers C9,  
R1 and C10, R2 stabilize the loops formed by the  
"bootstrap" circuits and the output stage of the  
TDA7294.  
In figures 21,22 the performances of the system  
in terms of distortion and output power at various  
frequencies (measured on PCB shown in fig. 19)  
are displayed.  
The output power that the TDA7294 in high-  
efficiency application is able to supply at  
Vs = +40V/+20V/-20V/-40V; f =1 KHz is:  
All components (TDA7294 and power transistors  
T1 and T2) can be placed on a 1.5oC/W heatsink,  
with the power darlingtons electrically insulated  
from the heatsink.  
- Pout = 150 W @ T.H.D.=10 % with Rl= 4 Ohm  
- Pout = 120 W @ "  
- Pout = 100 W @ "  
- Pout = 80 W @ "  
= 1 % "  
=10 % with Rl= 8 Ohm  
= 1 % "  
"
"
Since the total power dissipation is less than that  
of a usual class AB amplifier, additional cost sav-  
ings can be obtained while optimizing the power  
supply, even with a high headroom.  
"
"
11/17  
TDA7294  
Figure 21: Distortion vs. Output Power  
Figure 20: Power Dissipation vs. Output Power  
HIGH-EFFICIENCY  
Figure 22: Distortion vs. Output Power  
Figure 23: Power Dissipation vs. Output Power  
Figure 24: Power Dissipation vs. Output Power  
12/17  
TDA7294  
BRIDGE APPLICATION  
- High power performances with limited supply  
voltage level.  
Another application suggestion is the BRIDGE  
configuration, where two TDA7294 are used, as  
shown by the schematic diagram of figure 25.  
- Considerably high output power even with high  
load values (i.e. 16 Ohm).  
In this application, the value of the load must not  
be lower than 8 Ohm for dissipation and current  
capability reasons.  
The characteristics shown by figures 27 and 28,  
measured with loads respectively 8 Ohm and 16  
Ohm.  
A suitable field of application includes HI-FI/TV  
subwoofers realizations.  
The main advantages offered by this solution are:  
With Rl= 8 Ohm, Vs = ±25V the maximum output  
power obtainable is 150 W, while with Rl=16  
Ohm, Vs = ±35V the maximum Pout is 170 W.  
Figure 25: Bridge Application Circuit  
+Vs  
0.22µF  
2200µF  
7
13  
6
3
22µF  
Vi  
+
-
14  
0.56µF  
22K  
22K  
680  
1
4
2
TDA7294  
ST-BY/MUTE  
20K  
22µF  
10  
9
15  
8
22K  
-Vs  
0.22µF  
2200µF  
1N4148  
9
15  
8
10  
3
10K  
30K  
22µF  
TDA7294  
6
22µF  
+
-
14  
0.56µF  
22K  
22K  
680  
1
4
2
7
13  
D93AU015A  
13/17  
TDA7294  
Figure 27: Distortion vs. Output Power  
Figure 26: Frequency Response of the Bridge  
Application  
Figure 28: Distortion vs. Output Power  
14/17  
TDA7294  
mm  
inch  
DIM.  
OUTLINE AND  
MIN. TYP. MAX. MIN. TYP. MAX.  
MECHANICAL DATA  
A
B
5
0.197  
0.104  
0.063  
2.65  
1.6  
C
D
1
0.039  
E
0.49  
0.66  
1.02  
0.55 0.019  
0.75 0.026  
0.022  
0.030  
F
G
1.27  
1.52 0.040 0.050 0.060  
G1  
H1  
H2  
L
17.53 17.78 18.03 0.690 0.700 0.710  
19.6  
0.772  
20.2  
0.795  
21.9  
21.7  
22.2  
22.1  
22.5 0.862 0.874 0.886  
22.5 0.854 0.870 0.886  
L1  
L2  
L3  
L4  
L7  
M
17.65  
18.1 0.695  
0.713  
17.25 17.5 17.75 0.679 0.689 0.699  
10.3  
2.65  
4.25  
4.63  
1.9  
10.7  
10.9 0.406 0.421 0.429  
2.9 0.104 0.114  
4.55  
5.08  
4.85 0.167 0.179 0.191  
5.53 0.182 0.200 0.218  
M1  
S
2.6  
2.6  
0.075  
0.075  
0.102  
0.102  
0.152  
S1  
Dia1  
1.9  
Multiwatt15 V  
3.65  
3.85 0.144  
15/17  
TDA7294  
mm  
inch  
DIM.  
OUTLINE AND  
MIN. TYP. MAX. MIN. TYP. MAX.  
MECHANICAL DATA  
A
B
5
0.197  
0.104  
0.063  
0.022  
0.030  
2.65  
C
1.6  
E
0.49  
0.66  
1.14  
0.55 0.019  
0.75 0.026  
F
G
1.27  
1.4  
0.045 0.050 0.055  
G1  
H1  
H2  
L
17.57 17.78 17.91 0.692 0.700 0.705  
19.6 0.772  
20.2  
0.795  
20.57  
18.03  
2.54  
0.810  
0.710  
0.100  
L1  
L2  
L3  
L4  
L5  
L6  
L7  
S
17.25 17.5 17.75 0.679 0.689 0.699  
10.3  
10.7  
5.28  
2.38  
10.9 0.406 0.421 0.429  
0.208  
0.094  
2.65  
1.9  
2.9  
2.6  
2.6  
0.104  
0.075  
0.075  
0.114  
0.102  
0.102  
0.152  
Multiwatt15 H  
S1  
Dia1  
1.9  
3.65  
3.85 0.144  
16/17  
TDA7294  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
17/17  
配单直通车
TDA7294HS产品参数
型号:TDA7294HS
Brand Name:STMicroelectronics
是否Rohs认证: 符合
生命周期:Active
零件包装代码:ZFM
包装说明:MULTIWATTH-15
针数:15
Reach Compliance Code:not_compliant
ECCN代码:EAR99
HTS代码:8542.33.00.01
Factory Lead Time:12 weeks
风险等级:1.6
Is Samacsys:N
标称带宽:20 kHz
商用集成电路类型:AUDIO AMPLIFIER
增益:30 dB
谐波失真:10%
JESD-30 代码:R-PZFM-T15
JESD-609代码:e3
信道数量:1
功能数量:1
端子数量:15
最高工作温度:70 °C
最低工作温度:
标称输出功率:100 W
封装主体材料:PLASTIC/EPOXY
封装代码:ZIP
封装等效代码:ZIP15H,.1,.8TB
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
电源:+-35 V
认证状态:Not Qualified
子类别:Audio/Video Amplifiers
最大压摆率:65 mA
最大供电电压 (Vsup):40 V
最小供电电压 (Vsup):10 V
表面贴装:NO
技术:BCDMOS
温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE
端子节距:1.27 mm
端子位置:ZIG-ZAG
处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1
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