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TEMT1000 / 1020 / 1030 / 1040

Vishay Semiconductors

Silicon Phototransistor

TEMT1000

TEMT1020

TEMT1040

Description

TEMT1000 series are high speed and high sensitive

silicon NPN epitaxial planar phototransistors in SMD

package with dome lens. Due to integrated Daylight

filter devices are sensitive for IR radiation only.

TEMT1030

Features

• High photo sensitivity

• Fast response times

• Angle of half sensitivity ϕ = 15ꢀ

16757

• Daylight filter matched to IR Emitters

Applications

Detector in electronic control and drive circuits

(λ = 870 nm to 950 nm)

• Versatile terminal configurations

• Matched IR Emitter series: TSML1000

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

IR Detector for Daylight application

Photo interrupters

Counter

Encoder

Absolute Maximum Ratings

T_amb= 25 ꢀC, unless otherwise specified

Parameter

Test condition

Symbol

V_ECO

Value

5

Unit

V

Emitter Collector Voltage

Collector current

I_C

I_CM

P_tot

T_j

50

100

mA

mW

ꢀC

Collector peak current

Total Power Dissipation

Junction Temperature

Storage Temperature Range

Operating Temperature Range

Soldering Temperature

t_p/T = 0.5, t_p≤ 10 ms

T_amb≤ 55 ꢀC

100

T_stg

T_amb

T_sd

- 40 to + 100

- 40 to + 85

< 260

ꢀC

t ≤ 5 s

ꢀC

Thermal Resistance Junction/

Ambient

R_thJA

400

K/W

Basic Characteristics

T_amb= 25 ꢀC, unless otherwise specified

Parameter

Test condition

Symbol

V_CEO

I_CEO

Min

70

Typ.

Max

200

Unit

V

Collector Emitter Voltage

I_C= 1 mA

Collector-emitter dark current

Collector-emitter capacitance

V

_CE= 20 V, E = 0

_CE= 5 V, f = 1 MHz, E = 0

1

3

nA

pF

C_CEO

Angle of Half Sensitivity

ϕ

15

deg

nm

Wavelength of Peak Sensitivity

λ_p

950

Document Number 81554

Rev. 1.5, 08-Mar-05

www.vishay.com

1

TEMT1000 / 1020 / 1030 / 1040

Vishay Semiconductors

Parameter

Test condition

Symbol

Min

Typ.

Max

0.3

Unit

nm

Range of Spectral Bandwidth

λ_0.5

750 to 980

E_e= 1 mW/cm²,

Collector Emitter Saturation

Voltage

V_CEsat

V

λ = 950 nm, I_C= 0.1 mA

Turn-On Time

V_S= 5 V, I_C= 5 mA,

t_on

t_off

f_c

2.0

2.3

180

7.0

µs

R_L= 100 Ω

Turn-Off Time

V_S= 5 V, I_C= 5 mA,

R_L= 100 Ω

Cut-Off Frequency

Collector Light Current

V

_S= 5 V, I_C= 5 mA,

kHz

mA

R_L= 100 Ω

E_e= 1 mW/cm²,

I_ca

2

λ = 950 nm, V_CE= 5V

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

4

10

f = 1 MHz

8

3

2

6

4

V

= 20 V

CE

1

0

10

2

0

100

- Collector Emitter Voltage ( V )

20

40

60

80

0.1

1

10

T

amb

- Ambient Temperature (°C )

V

CE

94 8304

94 8294

Figure 1. Collector Dark Current vs. Ambient Temperature

Figure 3. Collector Emitter Capacitance vs. Collector Emitter

Voltage

2.0

1.8

8

V

R

= 5 V

= 100 Ω

λ = 950 nm

CE

V

= 5 V

CE

6

4

L

2

1.6

1.4

1.2

1.0

E

= 1 mW/cm

λ= 950 nm

e

t

off

on

2

0

0.8

0.6

100

0

2

4

6

8

10

12

14

0

20

40

60

80

T

amb

- Ambient Temperature (°C )

I

C

- Collector Current ( mA )

94 8239

94 8293

Figure 2. Relative Collector Current vs. Ambient Temperature

Figure 4. Turn On/Turn Off Time vs. Collector Current

www.vishay.com

2

Document Number 81554

Rev. 1.5, 08-Mar-05

TEMT1000 / 1020 / 1030 / 1040

Vishay Semiconductors

0°

10°

20 °

30°

40°

1.0

0.9

50°

60°

0.8

70°

0.7

80°

0.6

0.6 0.4 0.2

0

0.2

0.4

94 8248

Figure 5. Relative Radiant Sensitivity vs. Angular Displacement

Document Number 81554

Rev. 1.5, 08-Mar-05

www.vishay.com

3

TEMT1000 / 1020 / 1030 / 1040

Vishay Semiconductors

Package Dimensions in mm

TEMT1000

16104

Package Dimensions in mm

TEMT1020

16105

www.vishay.com

4

Document Number 81554

Rev. 1.5, 08-Mar-05

TEMT1000 / 1020 / 1030 / 1040

Vishay Semiconductors

Package Dimensions in mm

TEMT1030

16756

Package Dimensions in mm

TEMT1040

16500

Document Number 81554

Rev. 1.5, 08-Mar-05

www.vishay.com

5

TEMT1000 / 1020 / 1030 / 1040

Vishay Semiconductors

Reel Dimensions

18033

www.vishay.com

6

Document Number 81554

Rev. 1.5, 08-Mar-05

TEMT1000 / 1020 / 1030 / 1040

Vishay Semiconductors

Taping TEMT1000

18089

Taping TEMT1020

18090

Document Number 81554

Rev. 1.5, 08-Mar-05

www.vishay.com

7

TEMT1000 / 1020 / 1030 / 1040

Vishay Semiconductors

Taping TEMT1030

18091

Precautions For Use

Reflow Solder Profile

1. Over-current-proof

Customer must apply resistors for protection, other-

wise slight voltage shift will cause big current change

(Burn out will happen).

260

240

220

200

180

160

140

120

100

80

2. Storage

- 5 °C/s

+ 5 °C/s

2.1 Storage temperature and rel. humidity conditions

are: 5 ꢀC to 35 ꢀC, R.H. 60 %

2.2 Floor life must not exceed 168 h, acc. to JEDEC

level 3, J-STD-020.

60 s to 120 s

5 s

Once the package is opened, the products should be

used within a week. Otherwise, they should be kept in

a damp proof box with desiccant.

Considering tape life, we suggest to use products

within one year from production date.

60

0

20 40 60 80 100 120 140 160 180 200 220

17172

Time ( s )

2.3 If opened more than one week in an atmosphere

5 ꢀC to 35 ꢀC, R.H. 60 %, devices should be treated

at 60ꢀC 5ꢀC for 15 hrs.

2.4 If humidity indicator in the package shows pink

color (normal blue), then devices should be treated

with the same conditions as 2.3

www.vishay.com

8

Document Number 81554

Rev. 1.5, 08-Mar-05

TEMT1000 / 1020 / 1030 / 1040

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 81554

Rev. 1.5, 08-Mar-05

www.vishay.com

9

型号:	TEMT1000
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	TELEFUNKEN MICROELECTRONICS GMBH
Reach Compliance Code：	unknown
风险等级：	5.73
Is Samacsys：	N
最大暗电源：	200 nA
JESD-609代码：	e0
安装特点：	SURFACE MOUNT
最大通态电流：	0.05 A
最高工作温度：	85 °C
最低工作温度：	-40 °C
峰值波长：	950 nm
最大功率耗散：	0.1 W
最长响应时间：	0.000002 s
子类别：	Photo Transistors
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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