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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Applications

 Weather and Marine Radar

Product Features

Functional Block Diagram

 Frequency Range: 9 – 10 GHz

 P_SAT: 45.5 dBm @ PIN = 18 dBm

 PAE: >43% @ PIN = 18 dBm

 Power Gain: 27.5 dB @ PIN = 18 dBm

 Bias: V_D= 28 V, I_DQ= 290 mA, V_G= -2.7 V Typical

(Pulsed V_D:PW = 100 us and DC = 10 %)

1

10

2

3

4

9

8

7

6

 Package Dimensions: 15.2 x 15.2 x 3.5 mm

5

 Package base is pure Cu offering superior thermal

management

General Description

Pad Configuration

TriQuint’s TGA2622-CP is a packaged, high power X-

band amplifier fabricated on TriQuint’s TQGaN25 0.25 um

GaN on SiC production process. Operating from 9 – 10

GHz, the TGA2622-CP achieves 35 W saturated output

powers, a power-added efficiency of greater than 43 %,

and power gain of 27.5 dB.

Pad No.

1, 5

Symbol

V_G

2, 4, 7, 9

GND

RF In

V_D

3

6, 10

8

RF Out

The TGA2622-CP is packaged in a 10-lead 15x15 mm

bolt-down package with a Cu base for superior thermal

management. It can support a range of bias voltages and

performs well under both pulsed and CW conditions.

Both RF ports are internally DC blocked and matched to

50 ohms allowing for simple system integration.

The TGA2622-CP is ideally suited for both commercial

and defense applications.

Ordering Information

Lead-free and RoHS compliant.

Part

ECCN

Description

9 – 10 GHz 35 W GaN

Power Amplifier

Evaluation boards are available upon request.

TGA2622-CP

3A001.b.2.b

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

- 1 of 15 -

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Absolute Maximum Ratings

Recommended Operating Conditions

Parameter

Drain Voltage (V_D)

Value

40 V

Parameter

Drain Voltage (V_D): Pulsed

Value

28 V

Gate Voltage Range (V_G)

Drain Current (I_D)

Gate Current (I_G)

-8 to 0V

4.3 A

-11 to 45 mA ⁽¹⁾

Drain Current (I_DQ

)

290 mA

Drain Current Under RF Drive (ID_DRIVE)

Gate Voltage (V_G)

See Plots p. 6

-2.7 V (Typ.)

See Plots p. 6

-40 to 85 °C

Power Dissipation (P_DISS), 85°C, CW

107 W

Gate Current Under RF Drive (IG_DRIVE)

Temperature (TBASE)

Input Power (P_IN), CW, 50Ω,

VD = 28V, 85°C

24 dBm

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended

operating conditions.

Input Power (P_IN), CW, VSWR 3:1,

VD = 28V, 85°C

Channel Temperature (T_CH)

Mounting Temperature (30 seconds)

Storage Temperature

275 °C

260 °C

-55 to 150 °C

Operation of this device outside the parameter ranges

given above may cause permanent damage. These are

stress ratings only, and functional operation of the device at

these conditions is not implied.

Notes:

(1)

Max rating for I_Gis at Channel Temperature (T_CH) of

200 °C

Electrical Specifications

Test conditions unless otherwise noted: 25 ⁰C, V_D= 28 V, I_DQ= 290 mA, V_G= -2.7 V Typical, Pulsed V_D:PW = 100 us, DC = 10 %

Parameter

Operational Frequency Range

Min

9

Typical

Max

10

Units

GHz

dB

Small Signal Gain

30

>11

>8

Input Return Loss

dB

Output Return Loss

dB

Output Power (Pin = 18dBm)

Power Added Efficiency (Pin = 18dBm)

Power Gain (Pin = 18dBm)

45.5

>43

27.5

dBm

%

dB

Output Power Temperature Coefficient Pulsed

-0.019

-0.023

dBm/°C

V

(calculated from 25 °C to 85 °C)

CW

Recommended Operating Voltage:

20

28

32

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

- 2 of 15 -

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Thermal and Reliability Information

Parameter

Thermal Resistance (θ_JC) ⁽¹⁾

Test Conditions

Value Units

VD = 28 V, IDQ = 290 mA,

1.15

ºC/W

(Pulsed V_D: PW = 100 us, DC = 10 %),

T_base= 85 °C, V_D= 28 V, I_{D_Drive}= 3.2 A,

PIN = 20 dBm, POUT = 45.6 dBm, P_DISS= 52 W

Channel Temperature (T_CH) (Under RF drive)

Median Lifetime (T_M)

145

°C

3.07 x 10^10 Hrs

Thermal Resistance (θ_JC) ⁽¹⁾

1.78

166

ºC/W

°C

CW, VD = 28 V, IDQ = 290 mA,

T_base= 85 °C, V_D= 28 V, I_{D_Drive}= 2.7 A,

PIN = 20 dBm, POUT = 44.8 dBm, P_DISS= 45 W

Channel Temperature (T_CH) (Under RF drive)

Median Lifetime (T_M)

Notes:

3.21 x 10^8 Hrs

1. Thermal Resistance measured to back of package.

Test Conditions: V_D= 40 V; Failure Criteria = 10% reduction in I_{D_MAX}

Median Lifetime vs. Channel Temperature

1E+18

1E+17

1E+16

1E+15

1E+14

1E+13

1E+12

1E+11

1E+10

1E+09

1E+08

1E+07

1E+06

1E+05

1E+04

Thermal Resistance vs. P_DISS

2.5

T_BASE= +85ꢀC

2.0

CW

Pulsed

1.5

1.0

0.5

Pulsed: PW=100us, DC=10%

10

20

30

40

50

60

70

80

FET13

P_DISS(W)

25

50

75 100 125 150 175 200 225 250 275

Channel Temperature, T_CH(C)

P_DISSvs. Frequency vs. T_BASE

60

P_IN= 18dBm

CW

50

40

30

20

10

0

50

40

30

20

10

0

-40C

+25C

+85C

-40C

+25C

+85C

V_D= 28V; I_DQ= 290mA

Pulsed: PW=100us, DC=10%

8.5

9

9.5

10

10.5

8.5

9

9.5

10

10.5

Frequency (GHz)

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Typical Performance: Large Signal (Pulsed Operation)

Output Power vs. Frequency vs. V_D

Output Power vs. Frequency vs. Temp.

47

46

45

44

43

42

41

40

47

46

45

44

43

42

41

40

P_IN= 18dBm

Temp. = +25ꢀC

V_D= 28V, I_DQ= 290mA

Pulsed: PW=100us, DC=10%

Vd=25V

-40C

+25C

+85C

Vd=28V

Vd=30V

I_DQ= 290mA

P_IN= 18dBm

Pulsed: PW=100us, DC=10%

8.5

9

9.5

10

10.5

8.5

9

9.5

Frequency (GHz)

10

10.5

Frequency (GHz)

Output Power vs. Freq vs. Input Power

Output Power vs. Input Power vs. Temp.

47

46

45

44

43

42

41

40

47

44

41

38

35

32

29

26

V_D= 28 V, I_DQ= 290 mA

Temp. = +25ꢀC

Freq. = 9.5GHz

-40C

+25C

+85C

16dBm

17dBm

18dBm

19dBm

20dBm

Pulsed: PW=100 us, DC=10%

V_D= 28V, I_DQ= 290mA

Pulsed: PW=100us, DC=10%

8.5

9

9.5

Frequency (GHz)

10

10.5

2

4

6

8

10

12

14

16

18

20

Input Power (dBm)

Output Power vs. Frequency vs. I_DQ

Output Power vs. Input Power vs. I_DQ

47

46

45

44

43

42

41

40

47

45

43

41

39

37

35

33

31

P_IN= 18dBm

Temp. = +25ꢀC

Freq. = 9.5 GHz

290 mA

725 mA

290mA

725mA

V_D= 28V

Pulsed: PW=100us, DC=10%

V_D= 28V

Pulsed: PW=100us, DC=10%

2

4

6

8

10

12

14

16

18

20

8.5

9

9.5

10

10.5

Input Power (dBm)

Frequency (GHz)

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

- 4 of 15 -

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Typical Performance: Large Signal (Pulsed Operation)

Power Gain vs. Frequency vs. V_D

PAE vs. Frequency vs. V_D

55

50

45

40

35

30

25

30

29

28

27

26

25

24

23

P_IN= 18dBm

Temp. = +25ꢀC

Vd=25V

Vd=28V

Vd=30V

Vd=25V

Vd=28V

Vd=30V

I_DQ= 290mA

Pulsed: PW=100us, DC=10%

I_DQ= 290mA

Pulsed: PW=100us, DC=10%

8.5

9

9.5

Frequency (GHz)

10

10.5

8.5

9

9.5

10

10.5

Frequency (GHz)

Power Gain vs. Frequency vs. Temp.

PAE vs. Frequency vs. Temperature

55

50

45

40

35

30

25

30

29

28

27

26

25

24

23

V_D= 28V, I_DQ= 290mA

Pulsed: PW=100us, DC=10%

V_D= 28V, I_DQ= 290mA

Pulsed: PW=100us, DC=10%

-40C

+25C

+85C

-40C

+25C

+85C

P_IN= 18dBm

9.5

8.5

9

9.5

Frequency (GHz)

10

10.5

8.5

9

10

10.5

Frequency (GHz)

PAE vs. Input Power vs. Temp.

Power Gain vs. Input Power vs. Temp.

60

50

40

30

20

10

0

40

37

34

31

28

25

22

19

V_D= 28V, I_DQ= 290mA

Pulsed: PW=100us, DC=10%

-40C

+25C

+85C

-40C

+25C

+85C

Freq. = 9.5 GHz

14 16 18

Freq. = 9.5 GHz

2

4

6

8

10

12

14

16

18

20

2

4

6

8

10

12

20

Input Power (dBm)

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Typical Performance: Large Signal (Pulsed Operation)

Drain Current vs. Frequency vs. V_D

Gate Current vs. Frequency vs. V_D

4000

3500

3000

2500

2000

1500

1000

500

10

8

P_IN= 18dBm

Temp. = +25ꢀC

Vd=25V

Vd=28V

Vd=30V

6

4

Vd=25V

Vd=28V

Vd=30V

2

I_DQ= 290mA

Pulsed: PW=100us, DC=10%

0

I_DQ= 290mA

Pulsed: PW=100us, DC=10%

-2

8.5

9

9.5

10

10.5

8.5

9

9.5

10

10.5

Frequency (GHz)

Drain Current vs. Frequency vs. Temp.

Gate Current vs. Frequency vs. Temp.

3500

3000

2500

2000

1500

1000

500

30

25

20

15

10

5

P_IN= 18dBm

V_D= 28V, I_DQ= 290mA

-40C

+25C

+85C

-40C

+25C

+85C

V_D= 28V, I_DQ= 290mA

0

Pulsed: PW=100us, DC=10%

-5

8.5

9

9.5

10

10.5

8.5

9

9.5

10

10.5

Frequency (GHz)

Drain Current vs. Input Power vs. Temp.

Gate Current vs. Input Power vs. Temp.

3500

3000

2500

2000

1500

1000

500

40

35

30

25

20

15

10

5

Freq. = 9.5 GHz

Pulsed: PW=100us, DC=10%

V_D= 28V, I_DQ= 290mA

Pulsed: PW=100us, DC=10%

V_D= 28V, I_DQ= 290mA

-40C

+25C

-40C

+25C

10

+85C

0

Freq. = 9.5 GHz

-5

2

4

6

8

10

12

14

16

18

20

2

4

6

8

12

14

16

18

20

Input Power (dBm)

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Typical Performance: Large Signal (CW Operation)

Output Power vs. Frequency vs. V_D

Output Power vs. Frequency vs. Temp.

47

46

45

44

43

42

41

40

47

46

45

44

43

42

41

40

CW

P_IN= 18dBm

Temp. = +25ꢀC

CW

Vd=25V

-40C

+25C

+85C

Vd=28V

Vd=30V

V_D= 28V, I_DQ= 290mA

I_DQ= 290mA

9.5

8.5

9

10

10.5

8.5

9

9.5

10

10.5

Frequency (GHz)

Output Power vs. Freq vs. Input Power

Output Power vs. Input Power vs. Temp.

47

46

45

44

43

42

41

40

47

Temp. = +25ꢀC

CW

Freq. = 9.5 GHz

44

41

38

35

32

29

26

16dBm

17dBm

18dBm

19dBm

20dBm

-40C

+25C

+85C

V_D= 28 V, I_DQ= 290 mA

CW

V_D= 28V, I_DQ= 290mA

8.5

9

9.5

10

10.5

2

4

6

8

10

12

14

16

18

20

Input Power (dBm)

Frequency (GHz)

Output Power vs. Frequency vs. I_DQ

Output Power vs. Input Power vs. I_DQ

47

46

45

44

43

42

41

40

47

V_D= 28V

P_IN= 18dBm

Temp. = +25ꢀC

CW

Temp. = +25ꢀC

45

43

41

39

37

35

33

31

290mA

725mA

290 mA

725 mA

V_D= 28V

CW

9.5

2

4

6

8

10

12

14

16

18

20

8.5

9

10

10.5

Input Power (dBm)

Frequency (GHz)

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Typical Performance: Large Signal (CW Operation)

Power Gain vs. Frequency vs. V_D

PAE vs. Frequency vs. V_D

55

50

45

40

35

30

25

30

29

28

27

26

25

24

23

CW

P_IN= 18dBm

Temp. = +25ꢀC

P_IN= 18dBm

CW

Vd=25V

Vd=28V

Vd=30V

Vd=25V

Vd=28V

Vd=30V

I_DQ= 290mA

9.5

I_DQ= 290mA

8.5

9

10

10.5

8.5

9

9.5

10

10.5

Frequency (GHz)

PAE vs. Frequency vs. Temperature

Power Gain vs. Frequency vs. Temp.

55

50

45

40

35

30

25

30

29

28

27

26

25

24

23

V_D= 28V, I_DQ= 290mA

P_IN= 18dBm

CW

-40C

+25C

+85C

-40C

+25C

+85C

V_D= 28V, I_DQ= 290mA

CW

8.5

9

9.5

10

10.5

8.5

9

9.5

10

10.5

Frequency (GHz)

PAE vs. Input Power vs. Temperature

Power Gain vs. Input Power vs. Temp.

60

50

40

30

20

10

0

38

36

34

32

30

28

26

24

22

CW

V_D= 28V, I_DQ= 290mA

Freq. = 9.5 GHz

-40C

+25C

+85C

-40C

+25C

+85C

Freq. = 9.5 GHz

CW

V_D= 28V, I_DQ= 290mA

2

4

6

8

10

12

14

16

18

20

2

4

6

8

10

12

14

16

18

20

Frequency (GHz)

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Typical Performance: Large Signal (CW Operation)

Drain Current vs. Frequency vs. V_D

Gate Current vs. Frequency vs. V_D

3500

3000

2500

2000

1500

1000

500

30

25

20

15

10

5

CW

P_IN= 18dBm

CW

P_IN= 18dBm

Temp. = +25ꢀC

Vd=25V

Vd=28V

Vd=30V

Vd=25V

Vd=28V

Vd=30V

0

I_DQ= 290mA

-5

8.5

9

9.5

10

10.5

8.5

9

9.5

10

10.5

Frequency (GHz)

Gate Current vs. Frequency vs. Temp.

Drain Current vs. Frequency vs. Temp.

30

25

20

15

10

5

3500

3000

2500

2000

1500

1000

500

P_IN= 18dBm

CW

P_IN= 18dBm

CW

+25C

+85C

-40C

+25C

+85C

0

V_D= 28V, I_DQ= 290mA

-5

8.5

9

9.5

10

10.5

8.5

9

9.5

10

10.5

Frequency (GHz)

Drain Current vs. Input Power vs. Temp.

Gate Current vs. Input Power vs. Temp.

3500

3000

2500

2000

1500

1000

500

5

4

Freq. = 9.5 GHz

CW

3

2

1

+25C

+85C

-40C

+25C

+85C

0

V_D= 28V, I_DQ= 290mA

0

-1

2

4

6

8

10

12

14

16

18

20

2

4

6

8

10

12

14

16

18

Frequency (GHz)

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Typical Performance: Linearity

2^ndHarmonic vs. Frequency vs. P_IN

3rd Harmonic vs. Frequency vs. P_IN

-20

-30

Temp. = +25ꢀC

V_D= 28V, I_DQ= 290mA

-25

-30

-35

-40

-45

-50

-40

-50

-60

-70

-80

-90

10dBm

18dBm

10dBm

18dBm

9

9.2

9.4

9.6

9.8

10

9

9.2

9.4

9.6

9.8

10

Frequency (GHz)

IM3 vs. Output Power vs. Frequency

IM5 vs. Output Power vs. Frequency

0

-10

-20

-30

-40

-50

-10

V_D= 28V, I_DQ= 290mA, 1MHz Tone Spacing

-20

-30

-40

-50

-60

-70

-80

9.0GHz

9.5GHz

10.0GHz

9.0GHz

9.5GHz

10.0GHz

Temp. = +25ꢀC

10

15

20

25

30

35

40

10

15

20

25

30

35

40

Output Power per Tone (dBm)

IM5 vs. Output Power vs. I_DQ

IM3 vs. Output Power vs. I_DQ

-10

-20

-30

-40

-50

-60

-70

-80

0

-10

-20

-30

-40

-50

Freq. = 9.5GHz, 1MHz Tone Spacing

V=28V, I_DQ=290mA

V=28V, I_DQ=725mA

V=28V, I_DQ=290mA

V=28V, I_DQ=725mA

Temp. = +25ꢀC

10

15

20

25

30

35

40

10

15

20

25

30

35

40

Output Power per Tone (dBm)

Preliminary Datasheet: Rev - 11-03-14

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Typical Performance: Small Signal

Gain vs. Frequency vs. Temperature

Gain vs. Frequency vs. I_DQ

39

36

33

30

27

24

36

33

30

27

24

290mA

-40C

21

725mA

+25C

18

+85C

V_D= 28 V, I_DQ= 290mA

V_D= 28V

Temp. = +25ꢀC

10 10.5

15

8.5

9

9.5

Frequency (GHz)

10

10.5

8.5

9

9.5

Frequency (GHz)

Input Return Loss vs. Freq. vs. Temp.

Input Return Loss vs. Freq. vs. I_DQ

0

-5

0

-5

V_D= 28 V, I_DQ= 290mA

V_D= 28 V

-10

-15

-20

-25

-30

-10

-15

-20

-25

-30

-40C

+25C

+85C

290 mA

725 mA

8.5

9

9.5

10

10.5

8.5

9

9.5

10

10.5

Frequency (GHz)

Output Return Loss vs. Freq. vs. Temp.

Output Return Loss vs. Freq. vs. I_DQ

0

-5

0

-5

V_D= 28 V, I_DQ= 290mA

V_D= 28 V

-10

-15

-20

-25

-30

-10

-15

-20

-25

-30

-40C

+25C

+85C

290 mA

725 mA

8.5

9

9.5

10

10.5

8.5

9

9.5

10

10.5

Frequency (GHz)

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Application Circuit

C1

0.1 uF

C7

0.01 uF

C5

10-47uF

R1

10 Ohms

R5

10 Ohms

RFIN

RFOUT

V

D

V

G

(Note 2)

(Note 1)

R6

10 Ohms

R2

10 Ohms

C2

0.1 uF

C8

0.01 uF

C6

10-47uF

Notes:

1. V_Gmust be biased from both sides (Pins 1 and 5)

2. V_Dmust be biased from both sides (Pins 6 and 10)

Bias-up Procedure

1. Set power supply: I_Dlimit to 3.5 A, I_Glimit to 25 mA

Bias-down Procedure

1. Turn off RF signal

2. Reduce V_Gto −5.0 V; Ensure I_DQ~ 0 mA

3. Reduce V_Dto 0 V

2. Apply -5.0 V to V_G(for pinch-off)

3. Increase V_Dto +28 V; Ensure I_DQis approx. 0 mA

4. Adjust V_Gmore positive until I_DQ= 290 mA

V_G~ -2.7 V typ

4. Turn off V_Dsupply

5. Turn off V_Gsupply

5. Apply RF signal

Pin Description

Pin No.

Symbol

Description

Gate Voltage; Bias network is required; must be biased

from both sides; see recommended Application Information

above.

1,5

V_G

3

RF_IN

Output; matched to 50 Ω; DC blocked

2,4,7,9

GND

Must be grounded on the PCB.

Drain voltage; Bias network is required; must be biased

from both sides; see recommended Application Information

above.

6,10

8

V_D

RF_OUT

Input; matched to 50 Ω; DC blocked

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

- 12 of 15 -

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Evaluation Board Layout

Notes: Both Top and Bottom VD and VG must be biased.

Bill of Material

Reference Des. Value Description

Manuf. Part Number

C1, C2

0.1 μF

10-47 μF Cap, 1206, 50 V, 20%, X5R (10 V is OK)

0.01 μF Cap, 0402, 50 V, 10%, X7R

10 ohms Res, 0402, 50 V, 5%

0 ohms Res, 0402, jumpers required for the above EVB

Cap, 0402, 50 V, 10%, X7R

Various

C5, C6

Various

C7, C8

R1, R2, R5, R6

R3, R4

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

- 13 of 15 -

www.triquint.com

TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Assembly Notes

1. Clean the board or module with alcohol. Allow it to dry fully.

2. Nylock screws are recommended for mounting the TGA2622-CP to the board.

3. To improve the thermal and RF performance, we recommend the following:

a. Apply thermal compound or 4 mils indium shim between the package and the board.

b. Attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim

between the heat sink and the board.

4. Apply solder to each pin of the TGA2622-CP.

5. Clean the assembly with alcohol.

Mechanical Information

Units: inches

Tolerances: unless specified

x.xx = ± 0.01; x.xxx = ± 0.005

Materials:

Base: Copper

Lead: Alloy 194

Lid: LCP (Liquid Crystal Polymer)

All metalized features are gold plated

Part is epoxy sealed

Marking:

2622: Part number

YY: Part Assembly year

WW: Part Assembly week

ZZZ: Serial Number

MXXX: Batch ID

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

- 14 of 15 -

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TGA2622-CP

9 – 10 GHz 35 W GaN Power Amplifier

Product Compliance Information

ESD Sensitivity Ratings

Solderability

Compatible with the latest version of J-STD-020, Lead-

free solder, 260°C

Caution! ESD-Sensitive Device

RoHS Compliance

This product also has the following attributes:

ESD Rating: TBD



Lead Free

Halogen Free (Chlorine, Bromine)

Antimony Free

TBBP-A (C₁₅H₁₂Br₄0₂) Free

PFOS Free

SVHC Free

Value:

Test:

TBD

Human Body Model (HBM)

Standard: JEDEC Standard JESD22-A114

MSL Rating

Level 5A at +260 °C convection reflow

The part is rated Moisture Sensitivity Level 5A at 260°C per

JEDEC standard IPC/JEDEC J-STD-020

ECCN

US Department of Commerce: 3A001.b.2.b

Contact Information

For the latest specifications, additional product information, worldwide sales and distribution locations, and

information about TriQuint:

Web: www.triquint.com

Email: info-sales@triquint.com

Tel:

Fax:

+1.972.994.8465

+1.972.994.8504

For technical questions and application information:

Email: info-products@triquint.com

Important Notice

The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information

contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained

herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The

information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with

such information is entirely with the user. All information contained herein is subject to change without notice.

Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The

information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any

patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or

anything described by such information.

TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-

sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal

injury or death.

Preliminary Datasheet: Rev - 11-03-14

Disclaimer: Subject to change without notice

- 15 of 15 -

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型号:	TGA2700
是否Rohs认证：	符合
生命周期：	Active
Reach Compliance Code：	compliant
风险等级：	5.72
构造：	COMPONENT
增益：	25 dB
最大输入功率 (CW)：	20 dBm
最大工作频率：	13000 MHz
最小工作频率：	7000 MHz
射频/微波设备类型：	WIDE BAND MEDIUM POWER
Base Number Matches：	1

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