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产品型号TGA4906-SM的Datasheet PDF文件预览

TGA4906-SM  
4 Watt Ka-Band Packaged HPA  
Key Features  
Frequency Range: 28 - 31 GHz  
Psat: 36 dBm  
Gain: 23 dB  
Return Loss: -12 dB  
Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical  
Package Dimensions: 5 x 5 x 1.19 mm  
Measured Performance  
Primary Applications  
Ka-Band VSAT  
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical  
38  
37  
36  
35  
34  
33  
Product Description  
The TriQuint TGA4906-SM is a compact 4 Watt  
High Power Amplifier for Ka-band applications.  
The part is designed using TriQuint’s proven  
standard 0.15 um gate Power pHEMT production  
process. The TGA4906-SM provides a nominal 36  
dBm of output power at an input power level of 14  
dBm with a small signal gain of 23 dB.  
32  
Psat  
31  
P1dB  
30  
28  
28.5  
29  
29.5  
30  
30.5  
31  
Frequency (GHz)  
The TGA4906-SM is a QFN 5x5 mm surface  
mount packaged. It is ideally suited for low cost  
emerging markets such as base station  
transmitters for satellite ground terminals and point  
to point radio.  
24  
22  
20  
18  
16  
14  
12  
10  
8
0
-2  
-4  
-6  
Lead-Free & RoHS compliant.  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
Evaluation boards are available upon request.  
Gain  
IRL  
6
ORL  
4
28  
28.5  
29  
29.5  
30  
30.5  
31  
Frequency (GHz)  
Datasheet subject to change without notice.  
1
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Table I  
Absolute Maximum Ratings 1/  
Symbol  
Parameter  
Value  
Notes  
Vd-Vg  
Vd  
Drain to Gate Voltage  
11 V  
6 V  
Drain Voltage  
2/  
2/  
2/  
Vg  
Gate Voltage Range  
Drain Current  
-5 to 0 V  
3.7 A  
Id  
Ig  
Gate Current Range  
Input Continuous Wave Power  
-15 to 202 mA  
26 dBm  
Pin  
1/  
2/  
These ratings represent the maximum operable values for this device. Stresses beyond those listed  
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect  
device lifetime. These are stress ratings only, and functional operation of the device at these  
conditions is not implied.  
Combinations of supply voltage, supply current, input power, and output power shall not exceed Pd  
(as listed in “Thermal Information”).  
Table II  
Recommended Operating Conditions  
Symbol  
Vd  
Parameter 1/  
Value  
6 V  
Drain Voltage  
Drain Current  
Idq  
1.6 A  
3.0 A  
-0.75 V  
Id_Drive  
Vg  
Drain Current under RF Drive  
Gate Voltage  
1/  
See assembly diagram for bias instructions.  
2
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Table III  
RF Characterization Table  
Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical  
SYMBOL  
PARAMETER  
TEST  
CONDITIONS  
NOMINAL  
UNITS  
Gain  
IRL  
Small Signal Gain  
f = 28 - 31 GHz  
f = 28 - 31 GHz  
f = 28 - 31 GHz  
f = 28 - 31 GHz  
f = 28 - 31 GHz  
23  
-12  
dB  
dB  
Input Return Loss  
ORL  
Psat  
Output Return Loss  
Saturated Output Power  
Gain Temp Coefficient  
-12  
dB  
36  
dBm  
dB/0C  
-0.04  
3
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Table IV  
Power Dissipation and Thermal Properties  
Parameter  
Test Conditions  
Value  
Notes  
Maximum Power Dissipation  
Tbaseplate = 85 ºC  
Pd = 18.5 W  
1/ 2/  
Tchannel = 150 ºC  
Tm = 1.0E+6 Hrs  
Thermal Resistance, θjc  
Vd = 6 V  
θjc = 3.5 (ºC/W)  
Tchannel = 119 ºC  
Tm = 4.1E+7 Hrs  
Id = 1600 mA  
Pd = 9.6 W  
Tbaseplate = 85 ºC  
Thermal Resistance, θjc  
Vd = 6 V  
θjc = 3.5 (ºC/W)  
Tchannel = 134 ºC  
Tm = 6.4E+6 Hrs  
Under RF Drive  
Id = 3 A  
Pout = 4 W (36 dBm)  
Pd = 14 W  
Tbaseplate = 85 ºC  
Mounting Temperature  
Storage Temperature  
30 Seconds  
260 ºC  
-65 to 150 ºC  
1/  
2/  
For a median life of 1E+6 hours, Power Dissipation is limited to  
Pd(max) = (150 ºC – Tbase ºC)/θjc.  
Channel operating temperature will directly affect the device median time to failure (MTTF). For  
maximum life, it is recommended that channel temperatures be maintained at the lowest possible  
levels.  
3/  
Tbase is defined @ package pin # 33 (ground)  
Power De-rating Curve  
20  
18  
Tm= 1.0E+6 Hrs  
16  
14  
12  
10  
8
6
4
2
0
-50 -25  
0
25 50 75 100 125 150 175 200  
Baseplate Temp (C)  
4
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Measured Data  
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical  
30  
27  
24  
21  
18  
15  
12  
9
6
3
0
20  
22  
24  
26  
28  
30  
32  
34  
36  
Frequency (GHz)  
0
-3  
-6  
-9  
-12  
-15  
-18  
-21  
-24  
-27  
-30  
IRL  
ORL  
20  
22  
24  
26  
28  
30  
32  
34  
36  
Frequency (GHz)  
5
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Measured Data  
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical  
38  
37  
36  
35  
34  
33  
32  
Psat  
31  
P1dB  
30  
25  
26  
27  
28  
29  
30  
31  
32  
33  
Frequency (GHz)  
40  
35  
30  
25  
20  
15  
10  
5
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Pout @ 30GHz  
Gain @ 30GHz  
PAE @ 30GHz  
Id @ 30GHz  
0
-20 -15 -10  
-5  
0
5
10  
15  
20  
Input Power (dBm)  
6
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Measured Data  
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
- 40 C  
+25 C  
+75 C  
6
20  
22  
24  
26  
28  
30  
32  
34  
36  
Frequency (GHz)  
38  
37  
36  
35  
34  
33  
32  
31  
30  
- 40C  
+ 25C  
+ 75C  
25  
26  
27  
28  
29  
30  
31  
32  
Frequency (GHz)  
7
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Electrical Schematic  
Vd_3  
top  
Vd_3  
bottom  
Vd_2  
bottom  
Vd_2  
top  
Vd_1  
top  
30  
27  
14  
26  
15  
TGA4906-SM  
21  
4
RF Input  
RF Output  
11  
Vg_1,2,3  
Bias Procedures  
Bias-up Procedure  
Vg set to -1.5 V  
Vd_set to +6 V  
Bias-down Procedure  
Turn off RF supply  
Reduce Vg to -1.5V. Ensure Idq ~ 0 mA  
Turn Vd to 0 V  
Adjust Vg more positive until Idq is 1.6 A.  
This will be ~ Vg = -0.75 V  
Apply RF signal to input  
Turn Vg to 0 V  
8
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Package Pinout  
Pin #1 DOT  
Pin  
Description  
4
RF Input  
21  
RF Output  
14, 15, 26, 27, 30  
11  
Vd  
Vg  
1, 8, 9, 16, 17, 24, 25,  
32, 33  
Ground  
2, 3, 5, 6, 7, 10, 12, 13,  
18, 19, 20, 22, 23, 28,  
29, 31  
N/C  
9
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Mechanical Drawing  
Units: millimeters  
Pkg x, y, z size tolerance: +/- 0.050  
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should  
be observed during handling, assembly and test.  
10  
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Recommended Assembly Board  
C1  
C2 C3  
R1 R2 R3  
C4 C5C6  
See detail  
tuning on  
page 12  
8mils  
C7 C8 C9  
R4 R5 R6  
Board is 8mil thick RO4003 with  
0.5oz copper cladding.  
diameter  
Copper filled  
vias  
R7  
C12  
Board is soldered on metal block  
and adequate heatsinking is required  
for 14 W power dissipation.  
C10  
C11  
Part  
Description  
C1, C2, C3,  
1 uF Capacitor (0603)  
0.01 uF Capacitor (0402)  
10 ohm Resistor (0402)  
22 ohm Resistor (0402)  
C10, C11, C12  
C4, C5, C6,  
C7, C8, C9  
R1, R2, R3,  
R4, R5, R6  
R7  
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should  
be observed during handling, assembly and test.  
11  
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Recommended Assembly Board (Con’t)  
Detail of PCB Tuning  
147.2  
54.6  
10.8  
38.5  
6.6  
50 x 57.5  
17.5  
29 x 23.5  
43 x 5  
20 x 57.5  
8 x 35  
5 x 18  
All units are in mils  
12  
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
TGA4906-SM  
Assembly Notes  
Recommended Surface Mount Package Assembly  
• Proper ESD precautions must be followed while handling packages.  
• Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.  
• TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow  
oven vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles  
are listed in the table below.  
• Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot  
placement. The volume of solder paste depends on PCB and component layout and should be well  
controlled to ensure consistent mechanical and electrical performance.  
• Clean the assembly with alcohol.  
Typical Solder Reflow Profiles  
Reflow Profile  
Ramp-up Rate  
SnPb  
3 °C/sec  
Pb Free  
3 °C/sec  
Activation Time and Temperature  
Time above Melting Point  
Max Peak Temperature  
Time within 5 °C of Peak Temperature  
Ramp-down Rate  
60 – 120 sec @ 140 – 160 °C  
60 – 150 sec  
60 – 180 sec @ 150 – 200 °C  
60 – 150 sec  
240 °C  
260 °C  
10 – 20 sec  
10 – 20 sec  
4 – 6 °C/sec  
4 – 6 °C/sec  
Ordering Information  
Part  
Package Style  
TGA4906-SM  
QFN 5x5 Surface Mount  
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should  
be observed during handling, assembly and test.  
13  
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
May 2008 © Rev -  
配单直通车
TGA4906-SM产品参数
型号:TGA4906-SM
是否Rohs认证: 符合
生命周期:Obsolete
包装说明:HQCCN,
Reach Compliance Code:compliant
HTS代码:8542.39.00.01
风险等级:5.65
JESD-30 代码:S-XQCC-N32
JESD-609代码:e4
长度:5 mm
功能数量:1
端子数量:32
封装主体材料:UNSPECIFIED
封装代码:HQCCN
封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG
峰值回流温度(摄氏度):260
认证状态:Not Qualified
座面最大高度:1.19 mm
标称供电电压:6 V
表面贴装:YES
电信集成电路类型:TELECOM CIRCUIT
端子面层:NICKEL PALLADIUM GOLD
端子形式:NO LEAD
端子节距:0.5 mm
端子位置:QUAD
处于峰值回流温度下的最长时间:30
宽度:5 mm
Base Number Matches:1
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