TIC116N现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

G

8 A Continuous On-State Current

80 A Surge-Current

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

K

A

G

1

2

3

400 V to 800 V Off-State Voltage

Max I of 20 mA

GT

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

400

600

700

800

400

600

700

800

8

UNIT

TIC116D

TIC116M

TIC116S

TIC116N

TIC116D

TIC116M

TIC116S

TIC116N

Repetitive peak off-state voltage

Repetitive peak reverse voltage

V_DRM

V

V_RRM

V

Continuous on-state current at (or below) 70°C case temperature (see Note 1)

I_T(RMS)

I_T(AV)

A

Average on-state current (180° conduction angle) at (or below) 70°C case temperature

(see Note 2)

5

Surge on-state current at (or below) 25°C case temperature (see Note 3)

Peak positive gate current (pulse width £ 300 ms)

Peak gate power dissipation (pulse width £ 300 ms)

Average gate power dissipation (see Note 4)

Operating case temperature range

I_TM

I_GM

80

A

3

A

P_GM

P_G(AV)

T_C

5

1

W

°C

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

T_L

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.

2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate

linearly to zero at 110°C.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. This value applies for a maximum averaging time of 20 ms.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

1

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Repetitive peak

off-state current

Repetitive peak

reverse current

Gate trigger current

I_DRM

V_D= rated V_DRM

T_C= 110°C

2

mA

I_RRM

I_GT

V_R= rated V_RRM

V_AA= 12 V

I_G= 0

2

mA

R_L= 100 W

t_p(g)³ 20 ms

8

20

2.5

V_AA= 12 V

T_C= - 40°C

t_p(g)³ 20 µs

V_AA= 12 V

t_p(g)³ 20 µs

V_AA= 12 V

t_p(g)³ 20 µs

R_L= 100 W

V_GT

Gate trigger voltage

Holding current

0.8

1.5

V

T_C= 110°C

0.2

V_AA= 12 V

T_C= - 40°C

100

40

Initiating I_T= 100 mA

V_AA= 12 V

I_H

mA

Initiating I_T= 100 mA

On-state

V_T

I_T= 8 A

(see Note 5)

I_G= 0

1.7

V

voltage

Critical rate of rise of

off-state voltage

dv/dt

V_D= rated V_D

T_C= 110°C

400

V/µs

NOTE 5: This parameter must be measured using pulse techniques, t_p= 300 µs, duty cycle £ 2 %. Voltage sensing-contacts, separate from

the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN

TYP

MAX

UNIT

R_qJC

R_qJA

3

°C/W

62.5

P R O D U C T

I N F O R M A T I O N

2

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

THERMAL INFORMATION

AVERAGE ON-STATE CURRENT

DERATING CURVE

MAX ANODE POWER LOSS

vs

ON-STATE CURRENT

TI03AA

TI03AB

16

14

12

10

8

100

10

1

T_J= 110°C

0°

180°

F

Conduction

Continuous DC

Angle

6

F = 180°

4

2

0

30

0·1

40

50

60

70

80

90

100 110

1

10

100

T_C- Case Temperature - °C

I_T- Continuous On-State Current - A

Figure 1.

Figure 2.

SURGE ON-STATE CURRENT

vs

TRANSIENT THERMAL RESISTANCE

vs

CYCLES OF CURRENT DURATION

TI03AC

TI03AD

100

10

1

10

1

T_C£ 70°C

No Prior Device Conduction

Gate Control Guaranteed

0·1

1

10

100

1

10

100

Consecutive 50 Hz Half-Sine-Wave Cycles

Figure 3.

Consecutive 50 Hz Half-Sine-Wave Cycles

Figure 4.

P R O D U C T

I N F O R M A T I O N

3

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

TYPICAL CHARACTERISTICS

GATE TRIGGER VOLTAGE

vs

GATE TRIGGER CURRENT

vs

CASE TEMPERATURE

TC03AB

TC03AA

1

0·8

0·6

0·4

0·2

0

V_AA=12 V

R_L= 100 W

t_p(g)20 µs

10

V_AA=12 V

R_L= 100 W

t_p(g)20 µs

1

-50

-25

0

25

50

75

100

125

-25

0

25

50

75

100

125

T_C- Case Temperature - °C

Figure 5.

Figure 6.

HOLDING CURRENT

vs

PEAK ON-STATE VOLTAGE

vs

PEAK ON-STATE CURRENT

CASE TEMPERATURE

TC03AD

TC03AE

100

2·5

T_C= 25 °C

t_P= 300 µs

V_AA= 12 V

Initiating I_T= 100 mA

Duty Cycle £ 2 %

2

1·5

1

10

0·5

1

-50

0

0·1

-25

0

25

50

75

100

125

1

10

100

T_C- Case Temperature - °C

I_TM- Peak On-State Current - A

Figure 7.

Figure 8.

P R O D U C T

I N F O R M A T I O N

4

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

TO-220

4,70

4,20

10,4

10,0

1,32

1,23

3,96

3,71

ø

2,95

2,54

6,6

6,0

15,32

14,55

18,0 TYP.

6,1

5,6

14,1

12,7

1,47

1,07

0,97

0,66

1

2

3

2,74

2,34

0,64

0,41

2,90

2,40

5,28

4,68

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

P R O D U C T

I N F O R M A T I O N

5

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any

semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the

information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI

deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement

of patents or services described herein. Nor is any license, either express or implied, granted under any patent

right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,

machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

P R O D U C T

I N F O R M A T I O N

6

型号:	TIC116N
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	TEXAS INSTRUMENTS INC
Reach Compliance Code：	not_compliant
风险等级：	5.8
Is Samacsys：	N
标称电路换相断开时间：	11 µs
关态电压最小值的临界上升速率：	100 V/us
最大直流栅极触发电流：	20 mA
最大直流栅极触发电压：	1.5 V
最大维持电流：	40 mA
最大漏电流：	2 mA
通态非重复峰值电流：	80 A
最大通态电流：	8000 A
最高工作温度：	110 °C
最低工作温度：	-40 °C
断态重复峰值电压：	800 V
子类别：	Silicon Controlled Rectifiers
表面贴装：	NO
触发设备类型：	SCR
Base Number Matches：	1

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