TIP3055现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号TIP3055的概述

TIP3055 芯片的概述与应用分析 1. 概述 TIP3055 是一种具有高功率处理能力的 NPN 型功率晶体管，广泛应用于线性放大、开关应用以及功率转换器中。由于其优良的电子特性和可靠性，TIP3055 被广泛应用于音频放大器、功率线路驱动以及各种电源管理设备中。它的高集电极电压和较大的集电极电流处理能力使其在多种电气环境中均能良好工作。 2. 详细参数 TIP3055 的主要参数包括： - 型号：TIP3055 - 类型：NPN功率晶体管 - 最大集电极-基极电压 (V_CB)：60 V - 最大集电极-发射极电压 (V_CE)：55 V - 最大发射极-基极电压 (V_EB)：5 V - 最大集电极电流 (I_C)：15 A - 功耗 (P_D)：115 W（在适当的散热条件下） - 增益频带产品 (f_T)：较高，可达2 MHz - 直流电流增益 (h_FE)：50 至 1...

产品型号TIP3055的Datasheet PDF文件预览

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by TIP3055/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose switching and amplifier applications.

•

DC Current Gain — h = 20–70 @ I = 4.0 Adc

FE C

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

Collector–Emitter Saturation Voltage — V

Excellent Safe Operating Area

= 1.1 Vdc (Max) @ I = 4.0 Adc

CE(sat)

MAXIMUM RATINGS

60 VOLTS

Rating

Symbol

Value

Unit

Vdc

Adc

90 WATTS

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Base Current

CEO

CER

100

7.0

1 5

7.0

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.72

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

CASE 340D–01

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.39

35.7

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

θJC

θJA

1000

100

= 4.0 V

= 25°C

TIP3055

TIP2955

0.1

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0 10

, COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

—

Vdc

CEO(sus)

(I = 30 mAdc, I = 0)

Collector Cutoff Current

(V = 70 Vdc, R

1.0

0.7

5.0

mAdc

CER

= 100 Ohms)

CE BE

Collector Cutoff Current

(V = 30 Vdc, I = 0)

CEO

Collector Cutoff Current

(V = 100 Vdc, V

CEV

= 1.5 Vdc)

CE BE(off)

Emitter Cutoff Current

(V = 7.0 Vdc, I = 0)

EBO

ON CHARACTERISTICS (1)

DC Current Gain

—

(I = 4.0 Adc, V

= 4.0 Vdc)

5.0

—

(I = 10 Adc, V

Collector–Emitter Saturation Voltage

(I = 4.0 Adc, I = 400 mAdc)

Vdc

CE(sat)

—

1.1

3.0

(I = 10 Adc, I = 3.3 Adc)

Base–Emitter On Voltage

(I = 4.0 Adc, V = 4.0 Vdc)

—

1.8

BE(on)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

3.0

—

Adc

s/b

= 30 Vdc, t = 1.0 s; Nonrepetitive)

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

2.5

—

MHz

kHz

(I = 0.5 Adc, V

C CE

= 10 Vdc, f = 1.0 MHz)

Small–Signal Current Gain

(V = 4.0 Vdc, I = 1.0 Adc, f = 1.0 kHz)

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2.0%.

NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.

100

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

300 µs

1.0 ms

down. Safe operating area curves indicate I – V

limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

5.0

10 ms

3.0

2.0

SECONDARY BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMIT @ T = 25°C

The data of Figure 2 is based on T = 25 C; T

J(pk)

1.0

0.5

0.3

0.2

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated for

temperature.

= 150°C

0.1

1.0

2.0

4.0 6.0

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS

INCHES

MIN

DIM

MIN

19.00

14.00

4.20

MAX

19.60

14.50

4.70

MAX

0.771

0.570

0.185

0.051

0.064

0.225

0.118

0.023

1.259

0.602

0.167

0.712

0.149

0.078

0.749

0.551

0.165

0.040

0.058

0.206

0.103

0.016

1.123

0.579

0.158

0.689

0.134

0.060

1.00

1.30

1.45

1.65

5.21

5.72

2.60

3.00

0.40

0.60

28.50

14.70

4.00

32.00

15.30

4.25

17.50

3.40

18.10

3.80

1.50

2.00

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 340D–01

ISSUE A

Motorola Bipolar Power Transistor Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET: http://Design–NET.com

HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Bipolar Power Transistor Device Data

TIP3055/D

◊

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TIP3055产品参数

型号:	TIP3055
生命周期：	Transferred
包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.26
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	15 A
集电极-发射极最大电压：	60 V
配置：	SINGLE
最小直流电流增益 (hFE)：	5
JEDEC-95代码：	TO-218
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	NPN
功耗环境最大值：	90 W
认证状态：	Not Qualified
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	2.5 MHz
VCEsat-Max：	3 V
Base Number Matches：	1

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