TIP36C芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号TIP36C的概述

芯片TIP36C的概述 TIP36C是一种NPN三极管，属于功率晶体管系列，广泛应用于中等功率的开关和放大应用。作为一种高电压和高电流的功率晶体管，TIP36C尤其适合用于转换电源、功率放大器及驱动电机等功率控制领域。该器件的高集电极-发射极电压（V_CE）以及高集电极电流（I_C）使其在各种应用中表现优异。芯片TIP36C的详细参数 TIP36C的主要参数包括： - 集电极-发射极饱和电压 (V_CE(sat)): 在最大负载下的电压降，通常约为2V。 - 最大集电极电流 (I_C): 最大值可达25A，适用于需要大电流驱动的应用。 - 最大集电极-发射极电压 (V_CE): 可承受最高至60V，这使其能适应较为严苛的工作环境。 - 功耗 (P_T): 最大功耗为65W，适合长时间工作在高功率条件下。 - 直流增益 (h_FE): 在集电极电流为8A时，直流增益可达到40到150之...

产品型号TIP36C的Datasheet PDF文件预览

Order this document

by TIP35A/D

SEMICONDUCTOR TECHNICAL DATA

. . . for general–purpose power amplifier and switching applications.

•

25 A Collector Current

Low Leakage Current — I

Excellent DC Gain — h

High Current Gain Bandwidth Product —

f = 1.0 MHz

= 1.0 mA @ 30 and 60 V

CEO

= 40 Typ @ 15 A

h = 3.0 min @ I = 1.0 A,

fe C

MAXIMUM RATINGS

TIP35A TIP35B TIP35C

TIP36A TIP36B TIP36C

*Motorola Preferred Device

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

25 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–100 VOLTS

125 WATTS

CEO

60 V

80 V

5.0

100 V

Collector Current — Continuous

Peak (1)

Base Current — Continuous

Total Power Dissipation

5.0

Adc

@ T = 25 C

125

1.0

Watts

W/ C

Derate above 25 C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

Unclamped Inductive Load

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

CASE 340D–02

TO–218AC

Thermal Resistance, Junction to Case

1.0

θJC

Junction–To–Free–Air Thermal Resistance

35.7

θJA

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle

10%.

125

100

125

150

175

100

, CASE TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁶r Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

Vdc

CEO(sus)

(I = 30 mA, I = 0)

TIP35A, TIP36A

TIP35B, TIP36B

TIP35C, TIP36C

100

—

Collector–Emitter Cutoff Current

CEO

= 30 V, I = 0)

TIP35A, TIP36A

TIP35B, TIP35C, TIP36B, TIP36C

—

1.0

= 60 V, I = 0)

Collector–Emitter Cutoff Current

(V = Rated V , V = 0)

—

0.7

CES

CE CEO EB

Emitter–Base Cutoff Current

(V = 5.0 V, I = 0)

—

1.0

EBO

ON CHARACTERISTICS (1)

DC Current Gain

—

(I = 1.5 A, V

= 4.0 V)

—

(I = 15 A, V

Collector–Emitter Saturation Voltage

(I = 15 A, I = 1.5 A)

Vdc

CE(sat)

—

1.8

4.0

(I = 25 A, I = 5.0 A)

Base–Emitter On Voltage

BE(on)

(I = 15 A, V

(I = 25 A, V

= 4.0 V)

—

2.0

4.0

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain

—

(I = 1.0 A, V

= 10 V, f = 1.0 kHz)

Current–Gain — Bandwidth Product

(I = 1.0 A, V = 10 V, f = 1.0 MHz)

3.0

MHz

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2.0%.

–30 V

3.0

TURN–ON TIME

+2.0 V

TO SCOPE

20 ns

≤

–11.0 V

≤

2.0

1.0

20 ns

= 25°C

/I = 10

10 TO 100

2.0%

µS

C B

DUTY CYCLE

≈

= 30 V

0.7

0.5

–30 V

3.0

= 2 V

TURN–OFF TIME

BE(off)

0.3

0.2

+9.0 V

TO SCOPE

20 ns

≤

(PNP)

(NPN)

0.1

–11.0 V

0.07

0.05

≤ 20 ns

+4.0 V

10 to 100

2.0%

µs

DUTY CYCLE

≈

0.03

0.02

FOR CURVES OF FIGURES 3 & 4, R & R ARE VARIED.

INPUT LEVELS ARE APPROXIMATELY AS SHOWN.

FOR NPN, REVERSE ALL POLARITIES.

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0 10

, COLLECTOR CURRENT (AMPERES)

Figure 2. Switching Time Equivalent Test Circuits

Figure 3. Turn–On Time

Motorola Bipolar Power Transistor Device Data

1000

7.0

(PNP)

(NPN)

500

200

= 25°C

= 4.0 V

= 25°C

5.0

= 30 V

/I = 10

C B

= I

3.0

2.0

100

B1 B2

1.0

0.7

0.5

0.3

0.2

PNP

NPN

5.0

2.0

1.0

0.1

0.2

0.5

1.0

2.0

5.0

50 100

0.3 0.5 0.7 1.0

2.0

3.0

5.0 7.0 10

, COLLECTOR CURRENT (AMPS)

, COLLECTOR CURRENT (AMPERES)

Figure 5. DC Current Gain

Figure 4. Turn–Off Time

100

FORWARD BIAS

300 µs

= 25°C

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate I – V

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

1.0 ms

limits of

10 ms

5.0

2.0

The data of Figure 6 is based on T = 25 C; T

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

J(pk)

SECONDARY BREAKDOWN

THERMAL LIMIT

BONDING WIRE LIMIT

1.0

0.5

when T

25 C. Second breakdown limitations do not der-

0.3

0.2

TIP35A, 36A

TIP35B, 36B

TIP35C, 36C

ate the same as thermal limitations.

REVERSE BIAS

1.0

2.0 3.0

5.0 7.0 10

50 70 100

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 7 gives RBSOA characteristics.

Figure 6. Maximum Rated Forward Bias

Safe Operating Area

≤ 100°C

TIP35C

TIP36C

TIP35B

TIP36B

TIP35A

TIP36A

5.0

100

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 7. Maximum Rated Forward Bias

Safe Operating Area

Motorola Bipolar Power Transistor Device Data

TEST CIRCUIT

MONITOR

(SEE NOTE A)

BB1

MJE180

TUT

INPUT

(SEE NOTE A)

= 100

BB2

–

= 10 V

MONITOR

= 0

BB2

–

= 10 V

= 0.1 Ω

BB1

VOLTAGE AND CURRENT WAVEFORMS

= 6.0 ms

(SEE NOTE B)

5.0 V

INPUT

VOLTAGE

100 ms

COLLECTOR

CURRENT

–3.0 A

–10 V

COLLECTOR

VOLTAGE

(BR)CER

NOTES:

A. L1 and L2 are 10 mH, 0.11 Ω, Chicago Standard Transformer Corporation C–2688, or equivalent.

B. Input pulse width is increased until I

C. For NPN, reverse all polarities.

= –3.0 A.

Figure 8. Inductive Load Switching

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS

INCHES

MIN

DIM

MIN

–––

MAX

20.35

15.20

4.90

1.30

1.37

5.55

3.00

0.78

MAX

0.801

0.598

0.193

0.051

0.054

0.219

0.118

0.031

–––

0.579

0.185

0.043

0.046

0.213

0.079

0.020

14.70

4.70

1.10

1.17

5.40

2.00

0.50

31.00 REF

1.220 REF

–––

4.00

16.20

4.10

–––

0.158

0.701

0.638

0.161

0.717

17.80

18.20

4.00 REF

1.75 REF

0.157 REF

0.069

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 340D–02

ISSUE B

Motorola Bipolar Power Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

Opportunity/Affirmative Action Employer.

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,

3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609

INTERNET: http://Design–NET.com

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Bipolar Power Transistor Device Data

TIP35/D

◊

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TIP36C产品参数

型号:	TIP36C
生命周期：	Contact Manufacturer
IHS 制造商：	INCHANGE SEMICONDUCTOR CO LTD
包装说明：	,
Reach Compliance Code：	unknown
风险等级：	5.56
Base Number Matches：	1

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